VS-E5PX3012LHN3

VS-E5PX3012LHN3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt® G5 FEATURES Base cathode • Hyperfast and optimized Qrr 2 • Best in class forward voltage drop and switching losses trade off 2 • Optimized for high speed operation 1 • 175 °C maximum operating junction temperature 3 TO-247AD 2L 3 Anode 1 Cathode • Polyimide passivation • AEC-Q101 qualified, meets JESD 201 class 2 whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models DESCRIPTION / APPLICATIONS Application Notes Featuring a unique combination of low conduction and switching losses, this rectifier is the right choice for high frequency converters, both soft switched / resonant. Specifically designed to improve efficiency of PFC and output rectification stages of EV / HEV battery charging stations, booster stage of solar inverters and UPS applications, these devices are perfectly matched to operate with MOSFETs or high speed IGBTs. PRIMARY CHARACTERISTICS IF(AV) 30 A VR 1200 V VF at IF at 125 °C 2.1 V trr 26 ns TJ max. 175 °C Package TO-247AD 2L Circuit configuration Single MECHANICAL DATA Case: TO-247AD 2L Molding compound meets UL 94 V-0 flammability rating Terminals: matte tin plated leads, solderable per J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 1200 V Repetitive peak reverse voltage VRRM Average rectified forward current IF(AV) TC = 101 °C, D = 0.50 30 Non-repetitive peak surge current IFSM TC = 45 °C, tp = 10 ms, sine wave 190 Repetitive peak forward current IFRM TC = 101 °C, D = 0.50, f = 20 kHz 60 Operating junction and storage temperature TJ, TStg A -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 1200 - - IF = 30 A - 2.6 3.3 IR = 100 μA IF = 30 A, TJ = 125 °C - 2.1 - VR = VR rated - - 50 TJ = 125 °C, VR = VR rated - - 500 UNITS V Reverse leakage current IR Junction capacitance CT VR = 200 V - 17 - pF Series inductance LS Measured to lead 5 mm from package body - 8 - nH μA Revision: 18-May-2022 Document Number: 96767 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5PX3012LHN3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge Qrr Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge Qrr MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V TEST CONDITIONS - 26 - TJ = 25 °C - 100 - TJ = 125 °C - 150 - - 12 - - 22 - IF = 20 A dIF/dt = 600 A/μs VR = 400 V TJ = 25 °C TJ = 125 °C TJ = 25 °C - 530 - TJ = 125 °C - 1550 - TJ = 25 °C - 80 - TJ = 125 °C - 120 - - 22 - - 37 - IF = 30 A dIF/dt = 1000 A/μs VR = 800 V TJ = 25 °C TJ = 125 °C UNITS ns A nC ns A TJ = 25 °C - 900 - TJ = 125 °C - 2300 - MIN. TYP. MAX. UNITS - - 0.8 °C/W - nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance, junction-to-case TEST CONDITIONS RthJC Weight Mounting torque Maximum junction and storage temperature range TJ, TStg - g - 12 (10) kgf · cm (lbf · in) -55 - 175 °C Case style: TO-247AD 2L E5PX3012LH 1000 100 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) Marking device 5.5 6.0 (5.0) TJ = 175 °C 10 TJ = 125 °C 1 TJ = 25 °C TJ = -40 °C TJ = 175 °C 100 TJ = 125 °C 10 TJ = 25 °C 1 0.1 0.1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 0 200 400 600 800 1000 1200 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 18-May-2022 Document Number: 96767 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5PX3012LHN3 www.vishay.com Vishay Semiconductors Allowable Solder Pad Temperature (°C) CT - Junction Capacitance (pF) 1000 100 10 1 0 200 400 600 800 1000 1200 180 160 DC 140 120 100 Square wave (D = 0.50) rated VR applied 80 60 0 VR - Reverse Voltage (V) 5 10 15 20 25 30 35 IF(AV) - Average Forward Current (A) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current 120 Average Power Loss (W) RMS limit 100 80 D = 0.10 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC 60 40 20 0 0 10 20 30 40 50 IF(AV) - Average Forward Current (A) Fig. 5 - Forward Power Loss Characteristics, Per Leg ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.01 0.001 0.00001 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 6 - Thermal Impedance ZthJC - Characteristics Revision: 18-May-2022 Document Number: 96767 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5PX3012LHN3 www.vishay.com Vishay Semiconductors 200 2600 TJ = 125 °C 2400 175 30 A, 800 V 150 20 A, 400 V 125 Qrr (nC) trr (ns) 2200 30 A, 800 V 2000 20 A, 400 V 1800 1600 100 1400 TJ = 125 °C 75 1200 200 400 600 800 1000 1200 200 400 600 800 1000 1200 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Reverse Recovery Charge vs. dIF/dt 45 TJ = 125 °C 40 IF = 20 A 35 VR = 400 V Irr (A) 30 25 IF = 30 A VR = 800 V 20 15 10 5 200 400 600 800 1000 1200 dIF/dt (A/µs) Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt Revision: 18-May-2022 Document Number: 96767 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5PX3012LHN3 www.vishay.com Vishay Semiconductors (3) trr ta IF 0 tb t0 t10 % 0.1 IRRM (2) IRRM Qrr (4) di(rec)M/dt (5) (1) diF/dt Fig. 10 - Reverse Recovery Waveform and Definitions Notes (1) di /dt - rate of change of current through zero crossing F (2) I RRM - peak reverse recovery current (3) t - reverse recovery time measured from t , crossing point of negative going I , to point t rr 0 F 10%, 0.1 IRRM (4) Q - area under curve defined by t and t rr 0 10 % t 10 % Q rr =  I ( t ) dt t0 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Revision: 18-May-2022 Document Number: 96767 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5PX3012LHN3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- E 5 P X 30 12 L H N3 1 2 3 4 5 6 7 8 9 10 1 - Vishay Semiconductors product 2 - Circuit configuration: E = single diode, 2 pins 3 - FRED Pt Gen 5 4 - P = TO-247 package 5 - Process type: X = hyperfast recovery 6 - Current rating (30 = 30 A) 7 - Voltage rating (12 = 1200 V) 8 - L = long lead 9 - H = AEC-Q101 qualified 10 - Environmental digit: N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-E5PX3012LHN3 QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95536 Part marking information www.vishay.com/doc?95648 Spice model www.vishay.com/doc?96684 Revision: 18-May-2022 Document Number: 96767 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 2L DIMENSIONS in millimeters and inches A A (3) (6) F P E B (2) R/2 A2 S (Datum B) Ø K M D BM F P1 A D2 Q 2xR (2) D1 (4) D 1, 2 4 D 3 Thermal pad (5) L1 C L See view B (4) E1 A 0.01 M D B M View A - A C 2 x b2 2xb 2x e A1 0.10 M C A M (b1, b3) Plating Base metal D D (c) c1 C C (b, b2) (4) Section C - C, D - D SYMBOL MILLIMETERS View B INCHES MIN. MAX. MIN. MAX. A 4.65 5.31 0.183 0.209 A1 2.21 2.59 0.087 0.102 NOTES SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. E 15.29 15.87 0.602 0.625 E1 13.46 - 0.53 - A2 1.50 2.49 0.059 0.098 e 5.46 BSC b 0.99 1.40 0.039 0.055 ØK 0.254 b1 0.99 1.35 0.039 0.053 L 19.81 20.32 0.780 0.800 b2 1.65 2.39 0.065 0.094 L1 3.71 4.29 0.146 0.169 b3 1.65 2.34 0.065 0.092 ØP 3.56 3.66 0.14 0.144 c 0.38 0.89 0.015 0.035 Ø P1 - 6.98 - 0.275 NOTES 3 0.215 BSC 0.010 c1 0.38 0.84 0.015 0.033 Q 5.31 5.69 0.209 0.224 D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 0.178 0.216 D1 13.08 - 0.515 - 4 S D2 0.51 1.35 0.020 0.053 5.51 BSC 0.217 BSC Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 28-May-2018 Document Number: 95536 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000