VS-E5PX6006L-N3

VS-E5PX6006L-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 60 A FRED Pt® G5 FEATURES Base cathode • Hyperfast and optimized Qrr 2 • Best in class forward voltage drop and switching losses trade off 2 • Optimized for high speed operation 1 • 175 °C maximum operating junction temperature 3 TO-247AD 2L 3 Anode 1 Cathode • Polyimide passivation • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES 3D 3D DESCRIPTION / APPLICATIONS 3D Models Featuring a unique combination of low conduction and switching losses, this rectifier is the right choice for soft switched and resonant converters, as well as medium frequency hard switching converters. This device is specifically designed to improve efficiency of high speed LLC output rectification stages of EV / HEV battery charging stations and high frequency stages of UPS applications. PRIMARY CHARACTERISTICS IF(AV) 60 A VR 600 V VF at IF at 125 °C 1.4 V trr (typ.) 26 IFSM 480 TJ max. 175 °C Package TO-247AD 2L Circuit configuration Single MECHANICAL DATA Case: TO-247AD 2L Molding compound meets UL 94 V-0 flammability rating Terminal: matte tin plated leads, solderable per J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Repetitive peak reverse voltage VRRM Average rectified forward current IF(AV) TC = 96 °C, D = 0.50 60 Non-repetitive peak surge current IFSM TC = 25 °C, tp = 10 ms, sine wave 480 Repetitive peak forward current IFRM TC = 96 °C, D = 0.50, f = 20 kHz 120 Operating junction and storage temperature TJ, TStg A -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR Forward voltage VF Reverse leakage current IR Junction capacitance Series inductance TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 60 A - 1.7 2.2 IF = 60 A, TJ = 125 °C - 1.4 - IR = 100 μA UNITS V VR = VR rated - - 25 TJ = 125 °C, VR = VR rated - - 500 CT VR = 200 V - 65 - pF LS Measured to lead 5 mm from package body - 8 - nH μA Revision: 19-Oct-2021 Document Number: 96758 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5PX6006L-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time TEST CONDITIONS trr Peak recovery current Qrr Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge TYP. MAX. - 26 - TJ = 25 °C - 44 - TJ = 125 °C - 62 - - 16 - - 33 - IF = 40 A dIF/dt = 1000 A/μs VR = 400 V TJ = 25 °C IRRM Reverse recovery charge MIN. IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V TJ = 125 °C TJ = 25 °C - 381 - TJ = 125 °C - 1283 - TJ = 25 °C - 46 - TJ = 125 °C - 67 - - 17 - - 37 - IF = 60 A dIF/dt = 1000 A/μs VR = 400 V TJ = 25 °C TJ = 125 °C Qrr UNITS ns A nC ns A TJ = 25 °C - 462 - TJ = 125 °C - 1568 - MIN. TYP. MAX. UNITS - - 0.63 °C/W - 5.5 - g - 0.2 - oz. 6 (5) - 12 (10) kgf · cm (lbf · in) -55 - 175 °C nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance, junction-to-case TEST CONDITIONS RthJC Weight Mounting torque Maximum junction and storage temperature range TJ, TStg Case style: TO-247AD 2L 1000 E5PX6006L 1000 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) Marking device 100 TJ = 175 °C 10 TJ = 125 °C TJ = 25 °C 1 100 TJ = 175 °C 10 TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 0.001 0.1 0 0.5 1.0 1.5 2.0 2.5 VF - Forward Voltage Drop (V) Fig. 1 - Forward Voltage Drop Characteristics 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 19-Oct-2021 Document Number: 96758 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5PX6006L-N3 www.vishay.com Allowable Solder Pad Temperature (°C) Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 10 0 100 200 300 400 500 600 180 170 160 150 140 DC 130 120 110 Square wave (D = 0.50) rated VR applied 100 90 80 0 VR - Reverse Voltage (V) 10 20 30 40 50 60 70 IF(AV) - Average Forward Current (A) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Average Power Loss (W) 160 RMS limit 140 120 100 D = 0.01 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 IF(AV) - Average Forward Current (A) Fig. 5 - Forward Power Loss Characteristics ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 6 - Transient Thermal Impedance, Junction to Case Revision: 19-Oct-2021 Document Number: 96758 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5PX6006L-N3 www.vishay.com Vishay Semiconductors 300 175 TJ = 125 °C, VR = 400 V IF = 60 A, VR = 400 V, low dI/dt 250 150 125 °C trr (ns) trr (ns) 200 IF = 120 A 125 IF = 60 A 100 150 25 °C 100 75 In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating 50 IF = 30 A 50 0 100 0 1000 20 40 60 80 100 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 10 - Typical Reverse Recovery Time vs. dIF/dt 1000 In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating 3000 TJ = 125 °C 800 VR = 400 V 2500 125 °C Qrr (nC) 1500 Qrr (nC) IF = 120 A 2000 IF = 60 A 600 400 IF = 60 A, VR = 400 V, low dI/dt 1000 200 IF = 30 A 25 °C 500 0 0 0 100 20 1000 40 60 80 100 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 11 - Typical Reverse Recovery Charge vs. dIF/dt Fig. 8 - Typical Reverse Recovery Charge vs. dIF/dt 12 In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating 50 TJ = 125 °C 45 10 IF = 120 A VR = 400 V 40 Irr (A) Irr (A) IF = 60 A, VR = 400 V, low dI/dt 8 IF = 60 A 35 30 25 125 °C 6 4 20 IF = 30 A 2 15 10 25 °C 0 0 5 100 1000 20 40 60 80 100 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 12 - Typical Reverse Recovery Current vs. dIF/dt Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt Revision: 19-Oct-2021 Document Number: 96758 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5PX6006L-N3 www.vishay.com Vishay Semiconductors (3) trr ta IF tb t0 t10 % 0 0.1 IRRM (2) Qrr (4) IRRM di(rec)M/dt (5) (1) diF/dt Fig. 13 - Reverse Recovery Waveform and Definitions Notes diF/dt - rate of change of current through zero crossing IRRM - peak reverse recovery current trr - reverse recovery time measured from t0, crossing point of negative going IF, to point t10%, 0.1 IRRM Qrr - area under curve defined by t0 and t10 % (1) (2) (3) (4) t 10 %  Q rr = I ( t ) dt t0 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr ORDERING INFORMATION TABLE Device code VS- E 5 P X 60 06 L -N3 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - 3 - Circuit configuration E = single diode 5 = Fred generation 5 4 - 5 - Package: P = TO-247 package X = hyperfast recovery 6 - Current rating (60 = 60 A) 7 - Voltage rating (06 = 600 V) 8 - Package: L = long lead (TO-247AD) 9 - Environmental digit: -N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-E5PX6006L-N3 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information SPICE model www.vishay.com/doc?95536 www.vishay.com/doc?95648 www.vishay.com/doc?96958 Revision: 19-Oct-2021 Document Number: 96758 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 2L DIMENSIONS in millimeters and inches A A (3) (6) F P E B (2) R/2 A2 S (Datum B) Ø K M D BM F P1 A D2 Q 2xR (2) D1 (4) D 1, 2 4 D 3 Thermal pad (5) L1 C L See view B (4) E1 A 0.01 M D B M View A - A C 2 x b2 2xb 2x e A1 0.10 M C A M (b1, b3) Plating Base metal D D (c) c1 C C (b, b2) (4) Section C - C, D - D SYMBOL MILLIMETERS View B INCHES MIN. MAX. MIN. MAX. A 4.65 5.31 0.183 0.209 A1 2.21 2.59 0.087 0.102 NOTES SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. E 15.29 15.87 0.602 0.625 E1 13.46 - 0.53 - A2 1.50 2.49 0.059 0.098 e 5.46 BSC b 0.99 1.40 0.039 0.055 ØK 0.254 b1 0.99 1.35 0.039 0.053 L 19.81 20.32 0.780 0.800 b2 1.65 2.39 0.065 0.094 L1 3.71 4.29 0.146 0.169 b3 1.65 2.34 0.065 0.092 ØP 3.56 3.66 0.14 0.144 c 0.38 0.89 0.015 0.035 Ø P1 - 6.98 - 0.275 NOTES 3 0.215 BSC 0.010 c1 0.38 0.84 0.015 0.033 Q 5.31 5.69 0.209 0.224 D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 0.178 0.216 D1 13.08 - 0.515 - 4 S D2 0.51 1.35 0.020 0.053 5.51 BSC 0.217 BSC Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 28-May-2018 Document Number: 95536 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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