VS-E5PX6012LHN3

VS-E5PX6012LHN3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 60 A FRED Pt® Gen 5 FEATURES Base cathode • Hyperfast and optimized Qrr 2 • Best in class forward voltage drop and switching losses trade off 2 • Optimized for high speed operation 1 • 175 °C maximum operating junction temperature 3 TO-247AD 2L 3 Anode 1 Cathode • Polyimide passivation • AEC-Q101 qualified, meets JESD 201 class 2 whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models DESCRIPTION / APPLICATIONS Application Notes Featuring a unique combination of low conduction and switching losses, this rectifier is the right choice for high frequency converters, both soft switched / resonant. Specifically designed to improve efficiency of PFC and output rectification stages of EV / HEV battery charging stations, booster stage of solar inverters and UPS applications, these devices are perfectly matched to operate with MOSFETs or high speed IGBTs. PRIMARY CHARACTERISTICS IF(AV) 60 A VR 1200 V VF at IF at 125 °C 2.1 V trr 30 ns TJ max. 175 °C Package TO-247AD 2L Circuit configuration Single MECHANICAL DATA Case: TO-247AD 2L Molding compound meets UL 94 V-0 flammability rating Terminals: matte tin plated leads, solderable per J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 1200 V Repetitive peak reverse voltage VRRM Average rectified forward current IF(AV) TC = 101 °C, D = 0.50 60 Non-repetitive peak surge current IFSM TC = 45 °C, tp = 10 ms, sine wave 370 Repetitive peak forward current IFRM TC = 101 °C, D = 0.50, f = 20 kHz 120 Operating junction and storage temperature TJ, TStg A -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 1200 - - IF = 60 A - 2.6 3.3 IR = 100 μA IF = 60 A, TJ = 125 °C - 2.1 - VR = VR rated - - 50 TJ = 125 °C, VR = VR rated - - 500 UNITS V Reverse leakage current IR Junction capacitance CT VR = 200 V - 32 - pF Series inductance LS Measured to lead 5 mm from package body - 8 - nH μA Revision: 18-May-2022 Document Number: 96768 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5PX6012LHN3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge Qrr Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge Qrr TEST CONDITIONS MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V - 30 - TJ = 25 °C - 120 - TJ = 125 °C - 170 - - 17 - - 32 - TJ = 25 °C TJ = 125 °C IF = 40 A dIF/dt = 600 A/μs VR = 400 V UNITS ns A TJ = 25 °C - 970 - TJ = 125 °C - 2950 - TJ = 25 °C - 90 - TJ = 125 °C - 130 - - 32 - - 53 - TJ = 25 °C - 1570 - TJ = 125 °C - 4300 - MIN. TYP. MAX. UNITS - - 0.4 °C/W - 5.5 - g - 12 (10) kgf · cm (lbf · in) - 175 °C TJ = 25 °C TJ = 125 °C IF = 60 A dIF/dt = 1000 A/μs VR = 800 V nC ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance, junction-to-case TEST CONDITIONS RthJC Weight 6.0 (5.0) Mounting torque Maximum junction and storage temperature range TJ, TStg -55 Case style: TO-247AD 2L 1000 100 TJ = 175 °C 10 TJ = 125 °C TJ = 25 °C 1 0.1 E5PX6012LH 10000 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) Marking device TJ = -40 °C TJ = 175 °C 1000 TJ = 125 °C 100 TJ = 25 °C 10 1 0.1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 0 200 400 600 800 1000 1200 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 18-May-2022 Document Number: 96768 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5PX6012LHN3 www.vishay.com Allowable Solder Pad Temperature (°C) Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 10 0 200 400 600 800 1000 1200 180 170 160 150 DC 140 130 120 110 Square wave (D = 0.50) rated VR applied 100 90 80 0 10 20 30 40 50 60 70 VR - Reverse Voltage (V) IF(AV) - Average Forward Current (A) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 0.01 DC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 5 - Thermal Impedance ZthJC - Characteristics 220 4800 TJ = 125 °C 60 A, 800 V 4000 Qrr (nC) 180 trr (ns) TJ = 125 °C 4400 200 40 A, 400 V 160 140 60 A, 800 V 3600 40 A, 400 V 3200 2800 120 2400 100 2000 200 400 600 800 1000 1200 200 400 600 800 1000 1200 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt Fig. 7 - Typical Stored Charge vs. dIF/dt Revision: 18-May-2022 Document Number: 96768 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5PX6012LHN3 www.vishay.com Vishay Semiconductors 60 TJ = 125 °C 50 Irr (A) 60 A, 800 V 40 40 A, 400 V 30 20 10 200 400 600 800 1000 1200 dIF/dt (A/µs) Fig. 8 - Typical Recovery Current vs. dIF/dt (3) trr ta IF 0 tb t0 t10 % 0.1 IRRM (2) IRRM Qrr (4) di(rec)M/dt (5) (1) diF/dt Fig. 9 - Reverse Recovery Waveform and Definitions Notes (1) di /dt - rate of change of current through zero crossing F (2) I RRM - peak reverse recovery current (3) t - reverse recovery time measured from t , crossing point of negative going I , to point t rr 0 F 10%, 0.1 IRRM (4) Q - area under curve defined by t and t rr 0 10 % t 10 % Q rr =  I ( t ) dt t0 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Revision: 18-May-2022 Document Number: 96768 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5PX6012LHN3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- E 5 P X 60 12 L H N3 1 2 3 4 5 6 7 8 9 10 1 - Vishay Semiconductors product 2 - Circuit configuration: E = single diode, 2 pins 3 - FRED Pt Gen 5 4 - P = TO-247 package 5 - Process type: X = hyperfast recovery 6 - Current rating (60 = 60 A) 7 - Voltage rating (12 = 1200 V) 8 - L = long lead 9 - H = AEC-Q101 qualified 10 - Environmental digit: N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-E5PX6012LHN3 QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95536 Part marking information www.vishay.com/doc?95648 SPICE model www.vishay.com/doc?96556 Revision: 18-May-2022 Document Number: 96768 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 2L DIMENSIONS in millimeters and inches A A (3) (6) F P E B (2) R/2 A2 S (Datum B) Ø K M D BM F P1 A D2 Q 2xR (2) D1 (4) D 1, 2 4 D 3 Thermal pad (5) L1 C L See view B (4) E1 A 0.01 M D B M View A - A C 2 x b2 2xb 2x e A1 0.10 M C A M (b1, b3) Plating Base metal D D (c) c1 C C (b, b2) (4) Section C - C, D - D SYMBOL MILLIMETERS View B INCHES MIN. MAX. MIN. MAX. A 4.65 5.31 0.183 0.209 A1 2.21 2.59 0.087 0.102 NOTES SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. E 15.29 15.87 0.602 0.625 E1 13.46 - 0.53 - A2 1.50 2.49 0.059 0.098 e 5.46 BSC b 0.99 1.40 0.039 0.055 ØK 0.254 b1 0.99 1.35 0.039 0.053 L 19.81 20.32 0.780 0.800 b2 1.65 2.39 0.065 0.094 L1 3.71 4.29 0.146 0.169 b3 1.65 2.34 0.065 0.092 ØP 3.56 3.66 0.14 0.144 c 0.38 0.89 0.015 0.035 Ø P1 - 6.98 - 0.275 NOTES 3 0.215 BSC 0.010 c1 0.38 0.84 0.015 0.033 Q 5.31 5.69 0.209 0.224 D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 0.178 0.216 D1 13.08 - 0.515 - 4 S D2 0.51 1.35 0.020 0.053 5.51 BSC 0.217 BSC Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 28-May-2018 Document Number: 95536 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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