VS-E5TH1506-M3

VS-E5TH1506-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt® G5 FEATURES Base cathode 2 • Best in class forward voltage drop and switching losses trade off 2 • Optimized for high speed operation • 175 °C maximum operating junction temperature 1 • Polyimide passivation 1 Cathode 3 3 Anode • Meets JESD 201 class 1A whisker test TO-220AC 2L • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES DESCRIPTION / APPLICATIONS 3D 3D 3D Models Featuring a unique combination of low conduction and switching losses, this rectifier is the right choice for soft switched and resonant converters, as well as medium frequency hard switching converters. This device is specifically designed to improve efficiency of high speed LLC output rectification stages of EV / HEV battery charging stations and high frequency stages of UPS applications. Application Notes PRIMARY CHARACTERISTICS IF(AV) 15 A VR 600 V VF at IF at 125 °C 1.15 V trr (typ.) 22 ns TJ max. 175 °C Package TO-220AC 2L Circuit configuration Single MECHANICAL DATA Case: TO-220AC 2L Molding compound meets UL 94 V-0 flammability rating Terminals: J-STD-002 matte tin plated leads, solderable per ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Repetitive peak reverse voltage VRRM Average rectified forward current IF(AV) TC = 136 °C, D = 0.50 15 Repetitive peak forward current IFRM TC = 136 °C, D = 0.50, f = 20 kHz 30 IFSM TC = 25 °C, tp = 10 ms, sine wave Non-repetitive peak surge current Operating junction and storage temperature TJ, TStg A 200 -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR Forward voltage VF Reverse leakage current IR Junction capacitance CT Series inductance LS TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 15 A - 1.3 1.6 IF = 15 A, TJ = 125 °C - 1.15 - IR = 100 μA UNITS V VR = VR rated - - 10 TJ = 125 °C, VR = VR rated - - 500 VR = 200 V - 25 - pF Measured to lead 5 mm from package body - 8 - nH μA Revision: 18-May-2022 Document Number: 96751 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5TH1506-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current Qrr Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge MIN. TYP. MAX. - 22 - TJ = 25 °C - 31 - TJ = 125 °C - 43 - - 15 - - 22 - TJ = 25 °C - 255 - TJ = 125 °C - 622 - TJ = 25 °C IRRM Reverse recovery charge TEST CONDITIONS IF = 1.0 A,dIF/dt = 100 A/μs, VR = 30 V TJ = 125 °C ns A nC TJ = 25 °C - 38 - TJ = 125 °C - 49 - - 16 - - 24 - TJ = 25 °C - 316 - TJ = 125 °C - 782 - MIN. TYP. MAX. UNITS - - 1.72 °C/W - 2.0 - g 6.0 (5) - 12 (10) kgf · cm (lbf · in) -55 - 175 °C TJ = 25 °C TJ = 125 °C Qrr IF = 10 A dIF/dt = 1000 A/μs VR = 400 V UNITS IF = 15 A dIF/dt = 1000 A/μs VR = 400 V ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance, junction-to-case TEST CONDITIONS RthJC Weight Mounting torque Maximum junction and storage temperature range TJ, TStg Case style TO-220AC 2L 100 TJ = 175 °C 10 1 TJ = 125 °C TJ = 25 °C 0.1 E5TH1506 1000 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) Marking device TJ = -40 °C 0 0.5 1.0 1.5 TJ = 175 °C 100 TJ = 125 °C 10 1 0.1 TJ = 25 °C 0.01 0.001 2.0 2.5 VF - Forward Voltage Drop (V) Fig. 1 - Forward Voltage Drop Characteristics, Per Leg 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage, Per Leg Revision: 18-May-2022 Document Number: 96751 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5TH1506-M3 www.vishay.com Allowable Solder Pad Temperature (°C) Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 10 0 100 200 300 400 500 600 180 170 160 DC 150 140 Square wave (D = 0.50) rated VR applied 130 120 0 VR - Reverse Voltage (V) 2 4 6 8 10 12 14 16 IF(AV) - Average Forward Current (A) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage, Per Leg Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current, Per Leg Average Power Loss (W) 30 RMS limit 25 20 D = 0.01 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 15 10 5 0 0 5 10 15 20 25 IF(AV) - Average Forward Current (A) Fig. 5 - Forward Power Loss Characteristics, Per Leg ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 0.50 0.20 0.10 0.05 0.02 0.01 0.1 DC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 6 - Transient Thermal Impedance, Junction to Case, Per Leg Revision: 18-May-2022 Document Number: 96751 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5TH1506-M3 www.vishay.com Vishay Semiconductors 300 150 In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating TJ = 125°C, VR = 400 V 250 125 IF = 30 A trr (ns) trr (ns) 200 IF = 15 A 100 75 125 °C 150 25 °C 100 50 50 IF = 7.5 A IF = 30 A, VR = 400 V, low dI/dt 25 0 100 0 1000 60 80 100 dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt, Per Leg Fig. 10 - Typical Reverse Recovery Time vs. dIF/dt, Per Leg 600 TJ = 125 °C 1200 In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating IF = 30 A VR = 400 V 1100 500 1000 400 900 Qrr (nC) Qrr (nC) 40 dIF/dt (A/µs) 1300 IF = 15 A 800 700 600 125 °C 300 200 IF = 7.5 A 500 IF = 30 A, VR = 400 V, low dI/dt 100 25 °C 400 300 0 100 1000 0 20 40 60 80 100 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 8 - Typical Reverse Recovery Charge vs. dIF/dt, Per Leg Fig. 11 - Typical Reverse Recovery Charge vs. dIF/dt, Per Leg 35 10 TJ = 125 °C 8 In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating 6 IF = 30 A, VR = 400 V, low dI/dt IF = 30 A VR = 400 V 30 IF = 15 A Irr (A) 25 Irr (A) 20 20 4 15 125 °C IF = 7.5 A 10 5 25 °C 2 0 100 1000 0 20 40 60 80 100 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt, Per Leg Fig. 12 - Typical Reverse Recovery Current vs. dIF/dt, Per Leg Revision: 18-May-2022 Document Number: 96751 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5TH1506-M3 www.vishay.com Vishay Semiconductors (3) trr ta IF tb t0 t10 % 0 0.1 IRRM (2) Qrr (4) IRRM di(rec)M/dt (5) (1) diF/dt Fig. 13 - Reverse Recovery Waveform and Definitions Notes (1) di /dt - rate of change of current through zero crossing F (2) I RRM - peak reverse recovery current (3) t - reverse recovery time measured from t , crossing point of negative going I , to point t rr 0 F 10%, 0.1 IRRM (4) Q - area under curve defined by t and t rr 0 10 % t 10 % Q rr =  I ( t ) dt t0 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr ORDERING INFORMATION TABLE Device code VS- E 5 T H 15 06 -M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - E = single diode 3 - 5 = FRED generation 5 4 4 - 5 - Package: T = TO-220AC 2L H = hyperfast recovery 6 - Current rating (15 = 15 A) 7 - Voltage rating (06 = 600 V) 8 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N BASE QUANTITY PACKAGING DESCRIPTION VS-E5TH1506-M3 50 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96156 Part marking information www.vishay.com/doc?95391 Revision: 18-May-2022 Document Number: 96751 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-220AC 2L DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A ØP Q B A (6) (E) A1 Thermal pad 1 (H1) H1 C D2 (6) D 2 D D L1 (2) C (6) c 2xb D1 2 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AC SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 ØP Q MILLIMETERS MIN. MAX. 11.68 13.30 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.524 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6, 7 3, 6 6 6 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC® TO-220, except D2 Revision: 07-Mar-2022 Document Number: 96156 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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