VS-E5TW1206FP-N3

VS-E5TW1206FP-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 12 A FRED Pt® G5 FEATURES • Best in class forward voltage drop and switching losses trade off • Optimized for high speed operation 2 Anode 1 Cathode 1 • 175 °C maximum operating junction temperature • Polyimide passivation 2 • Fully isolated package (VINS =2500 VRMS) TO-220 FullPAK 2L • True 2 pin package • Designed and qualified according to JEDEC® - JESD 47 LINKS TO ADDITIONAL RESOURCES • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3D 3D 3D Models Application Notes DESCRIPTION / APPLICATIONS Featuring a unique combination of low conduction and switching losses, this rectifier is the right choice for soft switched and resonant converters, as well as medium frequency hard switching converters. This device is specifically designed to improve as output rectifier for DC/DC stage in resonant converters and as PFC rectifier for aircon and industrial power supplies. PRIMARY CHARACTERISTICS IF(AV) 12 A VR 600 V VF at IF at 125 °C 1.75 V trr (typ.) 16 ns TJ max. 175 °C Package TO-220 FullPAK 2L Circuit configuration Single MECHANICAL DATA Case: TO-220 FullPAK 2L Molding compound meets UL 94 V-0 flammability rating Terminals: J-STD-002 matte tin plated leads, solderable per ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Repetitive peak reverse voltage VRRM Average rectified forward current in DC IF(AV) TC = 100 °C, DC 12 Non-repetitive peak surge current IFSM TC = 25 °C, tp = 10 ms, sine wave 110 Operating junction and storage temperature TJ, TStg A -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 12 A - 2.35 3.35 IR = 100 μA IF = 12 A, TJ = 125 °C - 1.75 - VR = VR rated - - 10 TJ = 125 °C, VR = VR rated - - 500 UNITS V Reverse leakage current IR Junction capacitance CT VR = 600 V - 10 - pF Series inductance LS Measured to lead 5 mm from package body - 8 - nH μA Revision: 07-Jun-2022 Document Number: 96976 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5TW1206FP-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time Peak recovery current SYMBOL trr IRRM Reverse recovery charge Qrr Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge Qrr TEST CONDITIONS MIN. TYP. MAX. IF = 1.0 A,dIF/dt = 100 A/μs, VR = 30 V - 16 - TJ = 25 °C - 25 - TJ = 125 °C - 30 - - 7.5 - - 13 - TJ = 25 °C TJ = 125 °C IF = 8 A dIF/dt = 1000 A/μs VR = 400 V TJ = 25 °C - 75 - TJ = 125 °C - 225 - TJ = 25 °C - 26 - TJ = 125 °C - 32 - - 9 - - 14 - TJ = 25 °C TJ = 125 °C IF = 12 A dIF/dt = 1000 A/μs VR = 400 V UNITS ns A nC ns A TJ = 25 °C - 90 - TJ = 125 °C - 275 - MIN. TYP. MAX. UNITS - - 3.5 °C/W - 2.0 - g 6.0 (5.0) - 12 (10) kgf · cm (lbf · in) -55 - 175 °C nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Thermal resistance, junction-to-case SYMBOL TEST CONDITIONS RthJC Weight Mounting torque Maximum junction and storage temperature range Marking device TJ, TStg Case style TO-220 FullPAK 2L E5TW1206FP Revision: 07-Jun-2022 Document Number: 96976 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5TW1206FP-N3 Vishay Semiconductors 100 100 CT - Junction Capacitance (pF) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 175 °C 10 1 TJ = 125 °C TJ = 25 °C TJ = -40 °C 10 0.1 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 100 VF - Forward Voltage Drop (V) IR - Reverse Current (µA) 1000 TJ = 175 °C TJ = 125 °C 10 1 TJ = 25 °C 0.1 0.01 0.001 0 100 200 300 400 300 400 500 600 Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Allowable Solder Pad Temperature (°C) Fig. 1 - Forward Voltage Drop Characteristics 100 200 VR - Reverse Voltage (V) 500 600 180 170 160 150 DC 140 130 120 110 100 Square wave (D = 0.50) rated VR applied 90 80 0 2 4 6 8 10 12 14 VR - Reverse Voltage (V) IF(AV) - Average Forward Current (A) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current 35 Average Power Loss (W) RMS limit 30 25 20 D = 0.01 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 15 10 5 0 0 2 4 6 8 10 12 14 16 18 IF(AV) - Average Forward Current (A) Fig. 5 - Forward Power Loss Characteristics Revision: 07-Jun-2022 Document Number: 96976 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5TW1206FP-N3 www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 6 - Transient Thermal Impedance, Junction to Case 100 16 TJ = 125 °C, VR = 400 V 90 TJ = 125 °C 14 IF = 24 A VR = 400 V IF = 24 A 80 12 IF = 12 A 60 Irr (A) trr (ns) 70 50 IF = 12 A 10 8 40 6 30 IF = 6 A IF = 6 A 4 20 10 2 100 1000 100 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt 200 400 IF = 12 A, VR = 400 V, low dI/dt TJ = 125 °C VR = 400 V 350 IF = 24 A 150 IF = 12 A trr (ns) Qrr (nC) 300 250 IF = 6 A 200 100 125 °C 25 °C 50 In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating 150 100 0 100 1000 10 100 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 8 - Typical Reverse Recovery Charge vs. dIF/dt Fig. 10 - Typical Reverse Recovery Time vs. dIF/dt Revision: 07-Jun-2022 Document Number: 96976 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5TW1206FP-N3 www.vishay.com Vishay Semiconductors 160 3.5 In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating 140 In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating 3 120 2.5 IF = 12 A, VR = 400 V, low dI/dt Irr (A) Qrr (nC) 100 125 °C 80 2 125 °C 1.5 60 IF = 12 A, VR = 400 V, low dI/dt 40 1 25 °C 25 °C 0.5 20 0 0 10 10 100 100 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 11 - Typical Reverse Recovery Charge vs. dIF/dt Fig. 12 - Typical Reverse Recovery Current vs. dIF/dt (3) trr ta IF 0 tb t0 t10 % 0.1 IRRM (2) IRRM Qrr (4) di(rec)M/dt (5) (1) diF/dt Fig. 13 - Reverse Recovery Waveform and Definitions Notes (1) di /dt - rate of change of current through zero crossing F (2) I RRM - peak reverse recovery current (3) t - reverse recovery time measured from t , crossing point of negative going I , to point t rr 0 F 10%, 0.1 IRRM (4) Q - area under curve defined by t and t rr 0 10 % t 10 % Q rr =  I ( t ) dt t0 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Revision: 07-Jun-2022 Document Number: 96976 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5TW1206FP-N3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- E 5 T W 12 06 FP -N3 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - E = single diode 3 - 5 = FRED generation 5 4 - 4 5 - Package: T = TO-220 package W = warp hyperfast recovery 6 - Current rating (12 = 12 A) 7 - Voltage rating (06 = 600 V) 8 - FP = TO-220 FullPAK 2L Environmental digit: N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free 9 ORDERING INFORMATION (Example) PREFERRED P/N VS-E5TW1206FP-N3 QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96157 Part marking information www.vishay.com/doc?95392 Revision: 07-Jun-2022 Document Number: 96976 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 2L TO-220 FullPAK DIMENSIONS in millimeters 3.40 Hole Ø 3.10 10.6 10.0 3.7 3.2 2.80 2.44 7.31 6.50 16.0 15.8 Mold flash bleeding 3.3 3.1 Exposed Cu 13.56 12.90 2.54 TYP. 0.61 0.38 0.9 0.7 2.85 2.65 1.20 1.47 1.30 1.05 2.54 TYP. Bottom view R 0.7 (2 places) R 0.5 4.8 4.6 5° ± 0.5° 5° ± 0.5° Revision: 06-Jul-17 Document Number: 96157 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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