VS-E5TX2106S2LHM3

VS-E5TX2106S2LHM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 20 A FRED Pt® G5 FEATURES Base cathode 4 4 • Best in class forward voltage drop and switching losses trade off • Optimized for high speed operation • 175 °C maximum operating junction temperature • Polyimide passivation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 3 Anode 1 N/C D2PAK 2L (TO-263AB 2L) • AEC-Q101 qualified meets JESD 201 class 2 whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES 3D 3D DESCRIPTION / APPLICATIONS 3D Models Featuring a unique combination of low conduction and switching losses, this rectifier is the right choice for soft switched and resonant converters, as well as medium frequency hard switching converters. This device is specifically designed to improve efficiency of high speed LLC output rectification stages of EV / HEV battery charging stations and high frequency stages of UPS applications PRIMARY CHARACTERISTICS IF(AV) 20 A VR 600 V VF at IF at 125 °C 1.40 V trr (typ.) 19 ns TJ max. 175 °C Package D2PAK 2L (TO-263AB 2L) Circuit configuration Single MECHANICAL DATA Case: D2PAK 2L (TO-263AB 2L) Molding compound meets UL 94 V-0 flammability rating Terminals: J-STD-002 matte tin plated leads, solderable per ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Repetitive peak reverse voltage VRRM Average rectified forward current IF(AV) TC = 107 °C, D = 0.50 Repetitive peak forward current IFRM TC = 107 °C, D = 0.50, f = 20 kHz 40 Non-repetitive peak surge current IFSM TC = 25 °C, tp = 10 ms, sine wave 185 Operating junction and storage temperature TJ, TStg 20 A -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 20 A - 1.7 2.31 IR = 100 μA IF = 20 A, TJ = 125 °C - 1.40 - VR = VR rated - - 10 TJ = 125 °C, VR = VR rated - - 500 UNITS V Reverse leakage current IR Junction capacitance CT VR = 200 V - 25 - pF Series inductance LS Measured to lead 5 mm from package body - 8 - nH μA Revision: 12-Jun-2023 Document Number: 96914 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5TX2106S2LHM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current Qrr Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge MIN. TYP. MAX. - 19 - TJ = 25 °C - 33 - TJ = 125 °C - 43 - - 12 - - 20 - TJ = 25 °C IRRM Reverse recovery charge TEST CONDITIONS IF = 1.0 A,dIF/dt = 100 A/μs, VR = 30 V TJ = 125 °C TJ = 25 °C - 185 - TJ = 125 °C - 510 - TJ = 25 °C - 41 - TJ = 125 °C - 50 - - 12 - - 19 - TJ = 25 °C TJ = 125 °C Qrr IF = 12 A dIF/dt = 1000 A/μs VR = 400 V IF = 20 A dIF/dt = 1000 A/μs VR = 400 V UNITS ns A nC ns A TJ = 25 °C - 240 - TJ = 125 °C - 640 - MIN. TYP. MAX. UNITS - - 1.72 °C/W - 2.0 - g - 0.07 - oz. -55 - 175 °C nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance, junction-to-case TEST CONDITIONS RthJC Weight Maximum junction and storage temperature range TJ, TStg Case style D2PAK 2L (TO-263AB 2L) 100 E5TX2106SH 1000 10 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) Marking device TJ = 175 °C TJ = -40 °C 1 TJ = 125 °C TJ = 25 °C 0.1 0 0.5 1.0 1.5 2.0 2.5 VF - Forward Voltage Drop (V) Fig. 1 - Forward Voltage Drop Characteristics TJ = 175 °C 100 TJ = 125 °C 10 1 0.1 TJ = 25 °C 0.01 0.001 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 12-Jun-2023 Document Number: 96914 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5TX2106S2LHM3 www.vishay.com Allowable Solder Pad Temperature (°C) Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 10 0 100 200 300 400 500 600 180 160 DC 140 120 Square wave (D = 0.50) rated VR applied 100 0 VR - Reverse Voltage (V) 5 10 15 20 25 IF(AV) - Average Forward Current (A) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current 50 RMS limit Average Power Loss (W) 45 40 35 30 D = 0.01 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 25 20 15 10 5 0 0 5 10 15 20 25 30 IF(AV) - Average Forward Current (A) Fig. 5 - Forward Power Loss Characteristics ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 0.50 0.20 0.10 0.05 0.02 0.01 0.1 DC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 6 - Transient Thermal Impedance, Junction to Case Revision: 12-Jun-2023 Document Number: 96914 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5TX2106S2LHM3 www.vishay.com Vishay Semiconductors 125 250 TJ = 125°C IF = 20 A, VR = 400 V, low dI/dt 200 IF = 40 A 100 trr (ns) trr (ns) IF = 20 A 75 150 125 °C 100 25 °C 50 IF = 10 A 50 25 0 100 1000 0 20 40 60 80 100 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 10 - Typical Reverse Recovery Time vs. dIF/dt 1000 400 TJ = 125 °C 900 In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating IF = 40 A 800 300 700 IF = 20 A Qrr (nC) Qrr (nC) In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating 600 500 125 °C 200 IF = 10 A 400 IF = 20 A, VR = 400 V, low dI/dt 100 300 25 °C 200 0 100 1000 0 20 40 60 80 100 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 8 - Typical Reverse Recovery Charge vs. dIF/dt Fig. 11 - Typical Reverse Recovery Charge vs. dIF/dt 25 7 TJ = 125 °C IF = 40 A In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating 6 20 5 IF = 20 A IF = 20 A, VR = 400 V, low dI/dt Irr (A) Irr (A) 15 10 IF = 10 A 4 125 °C 3 2 25 °C 5 1 0 0 100 1000 0 20 40 60 80 100 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt Fig. 12 - Typical Reverse Recovery Current vs. dIF/dt Revision: 12-Jun-2023 Document Number: 96914 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5TX2106S2LHM3 www.vishay.com Vishay Semiconductors (3) trr ta IF 0 tb t10 % t0 0.1 IRRM (2) IRRM Qrr (4) di(rec)M/dt (5) (1) diF/dt Fig. 13 - Reverse Recovery Waveform and Definitions Notes diF/dt - rate of change of current through zero crossing IRRM - peak reverse recovery current trr - reverse recovery time measured from t0, crossing point of negative going IF, to point t10%, 0.1 IRRM (4) Q - area under curve defined by t and t rr 0 10 % (1) (2) (3) t 10 % Q rr =  I ( t ) dt t0 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Revision: 12-Jun-2023 Document Number: 96914 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5TX2106S2LHM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- E 5 T X 21 06 S2 L H M3 1 2 3 4 5 6 7 8 9 10 11 1 - Vishay Semiconductors product 2 - E = single diode 3 - 5 = FRED generation 5 4 - 4 5 - Package: T = D2PAK (TO-263) package X = hyperfast recovery 6 - Current rating (21 = 20 A) 7 - Voltage rating (06 = 600 V) 8 - S2 = true 2 pin D2PAK 9 - None = tube (50 pieces) • L = tape and reel (left oriented, for D2PAK package) If needed different orientation/packaging, please contact factory 10 - H = AEC-Q101 qualified 11 - Environmental digit: M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-E5TX2106S2LHM3 BASE QUANTITY PACKAGING DESCRIPTION 800 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96683 Part marking information www.vishay.com/doc?96693 Packaging information www.vishay.com/doc?95032 Revision: 12-Jun-2023 Document Number: 96914 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK 2L (TO-263AB 2L) DIMENSIONS in millimeters and inches Conforms to JEDEC® outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 B 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb ± 0.004 M B 0.010 M A M B Plating Base Metal (4) b1, b3 H 2x e Gauge plane c1 (4) (c) B 0° to 8° Seating plane L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 L3 L4 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 2 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC® outline TO-263AB Revision: 14-Mar-2022 Document Number: 96683 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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