VS-E5TX3006-M3

VS-E5TX3006-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt® G5 FEATURES Base cathode 2 • Best in class forward voltage drop and switching losses trade off 2 • Optimized for high speed operation • 175 °C maximum operating junction temperature 1 • Polyimide passivation 3 TO-220AC 2L 1 Cathode 3 Anode • Meets JESD 201 class 1A whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES DESCRIPTION / APPLICATIONS 3D 3D Featuring a unique combination of low conduction and switching losses, this rectifier is the right choice for soft switched and resonant converters, as well as medium frequency hard switching converters. This device is specifically designed to improve efficiency of high speed LLC output rectification stages of EV / HEV battery charging stations and high frequency stages of UPS applications. 3D Models PRIMARY CHARACTERISTICS IF(AV) 30 A VR 600 V VF at IF at 125 °C 1.3 V TJ max. 175 °C trr (typ.) 22 ns Package 2L TO-220AC Circuit configuration Single MECHANICAL DATA Case: 2L TO-220AC Molding compound meets UL 94 V-0 flammability rating Terminals: J-STD-002 matte tin plated leads, solderable per ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Repetitive peak reverse voltage VRRM Average rectified forward current IF(AV) TC = 106 °C, D = 0.50 30 Non-repetitive peak surge current IFSM TC = 25 °C, tp = 10 ms, sine wave 310 Repetitive peak forward current IFRM TC = 106 °C, D = 0.50, f = 20 kHz 60 Operating junction and storage temperature TJ, TStg A -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 30 A - 1.6 2.1 IR = 100 μA IF = 30 A, TJ = 125 °C - 1.3 - VR = VR rated - - 20 TJ = 125 °C, VR = VR rated - - 500 UNITS V Reverse leakage current IR Junction capacitance CT VR = 200 V - 36 - pF Series inductance LS Measured to lead 5 mm from package body - 8 - nH μA Revision: 28-Jun-2021 Document Number: 96754 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5TX3006-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current Qrr Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge MIN. TYP. MAX. - 22 - TJ = 25 °C - 39 - TJ = 125 °C - 50 - - 14 - - 24 - TJ = 25 °C - 253 - TJ = 125 °C - 785 - TJ = 25 °C IRRM Reverse recovery charge TEST CONDITIONS IF = 1.0 A,dIF/dt = 100 A/μs, VR = 30 V TJ = 125 °C ns A nC TJ = 25 °C - 41 - TJ = 125 °C - 56 - - 16 - - 27 - TJ = 25 °C - 306 - TJ = 125 °C - 952 - MIN. TYP. MAX. UNITS - - 1.3 °C/W TJ = 25 °C TJ = 125 °C Qrr IF = 20 A dIF/dt = 1000 A/μs VR = 400 V UNITS IF = 30 A dIF/dt = 1000 A/μs VR = 400 V ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance, junction-to-case TEST CONDITIONS RthJC - 2.0 - g - 0.07 - oz. 6 (5) - 12 (10) kgf · cm (lbf · in) -55 - 175 °C Weight Mounting torque Maximum junction and storage temperature range TJ, TStg Case style: 2L TO-220AC 1000 E5TX3006 1000 TJ = 175 °C IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) Marking device 100 TJ = 175°C 10 TJ = 125°C TJ = 25°C 1 0.1 100 TJ = 125 °C 10 1 TJ = 25 °C 0.1 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 28-Jun-2021 Document Number: 96754 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5TX3006-M3 www.vishay.com Allowable Solder Pad Temperature (°C) Vishay Semiconductors CT - Junction Capacitance (pF) 100 10 0 100 200 300 400 500 600 180 170 160 150 140 DC 130 120 110 Square wave (D = 0.50) rated VR applied 100 90 80 0 5 VR - Reverse Voltage (V) 10 15 20 25 30 35 IF(AV) - Average Forward Current (A) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Average Power Loss (W) 70 RMS limit 60 50 40 D = 0.01 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 30 20 10 0 0 5 10 15 20 25 30 35 40 45 50 IF(AV) - Average Forward Current (A) Fig. 5 - Average Power Loss vs. Average Forward Current ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 0.50 0.20 0.10 0.05 0.02 0.01 0.1 DC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 6 - Thermal Impedance ZthJC - Characteristics Revision: 28-Jun-2021 Document Number: 96754 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5TX3006-M3 www.vishay.com Vishay Semiconductors 300 160 In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating TJ = 125 °C, VR = 400 V 150 250 140 130 200 IF = 60 A 110 trr (ns) trr (ns) 120 IF = 30 A 100 90 125 °C 150 25 °C 100 80 70 60 50 IF = 15 A IF = 30 A, VR = 400 V, low dI/dt 50 0 40 100 0 1000 20 40 60 80 100 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 10 - Typical Reverse Recovery Time vs. dIF/dt 1500 600 1400 TJ = 125 °C 1300 VR = 400 V IF = 60 A In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating 500 1200 400 1000 Qrr (nC) Qrr (nC) 1100 IF = 30 A 900 800 700 125 °C 300 200 600 IF = 15 A 500 IF = 30 A, VR = 400 V, low dI/dt 100 25 °C 400 300 0 100 1000 0 40 60 80 100 dIF/dt (A/µs) Fig. 8 - Typical Reverse Recovery Charge vs. dIF/dt Fig. 11 - Typical Reverse Recovery Charge vs. dIF/dt 10 35 TJ = 125 °C 8 In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating 6 IF = 30 A, VR = 400 V, low dI/dt IF = 60 A VR = 400 V 30 IF = 30 A Irr (A) 25 Irr (A) 20 dIF/dt (A/µs) 20 15 4 125 °C IF = 15 A 25 °C 2 10 0 5 100 1000 0 20 40 60 80 100 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt Fig. 12 - Typical Reverse Recovery Current vs. dIF/dt Revision: 28-Jun-2021 Document Number: 96754 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E5TX3006-M3 www.vishay.com Vishay Semiconductors (3) trr ta IF tb t0 t10 % 0 0.1 IRRM (2) Qrr (4) IRRM di(rec)M/dt (5) (1) diF/dt Fig. 13 - Reverse Recovery Waveform and Definitions Notes (1) di /dt - rate of change of current through zero crossing F (2) I RRM - peak reverse recovery current (3) t - reverse recovery time measured from t , crossing point of negative going I , to point t rr 0 F 10%, 0.1 IRRM (4) Q - area under curve defined by t and t rr 0 10 % t 10 % Q rr =  I ( t ) dt t0 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr ORDERING INFORMATION TABLE Device code VS- E 5 T X 30 06 -M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - E = single diode 3 - 5 = FRED generation 5 4 - Package: T = 2L TO-220AC 5 - X = hyperfast recovery 6 - Current rating (30 = 30 A) 7 - Voltage rating (06 = 600 V) 8 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-E5TX3006-M3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96156 Part marking information www.vishay.com/doc?95391 SPICE model www.vishay.com/doc?96918 Revision: 28-Jun-2021 Document Number: 96754 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 2L TO-220AC DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A ØP Q B A (6) (E) A1 Thermal pad 1 (H1) H1 C D2 (6) D 2 D D L1 (2) C (6) c 2xb D1 2 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AC SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 ØP Q MILLIMETERS MIN. MAX. 11.68 13.30 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.524 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6, 7 3, 6 6 6 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC® TO-220, except D2 Revision: 13-Jun-2019 Document Number: 96156 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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