VS-E7MH0112-M3
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Vishay Semiconductors
Hyperfast Rectifier, 1 A FRED Pt®
FEATURES
Cathode
• Hyperfast recovery time, reduced Qrr, and soft
recovery
• 175 °C maximum operating junction temperature
• Specified for output and snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Anode
SMA (DO-214AC)
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
DESCRIPTION / APPLICATIONS
Application
Notes
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use as clamp, snubber and
freewheeling diode in a flyback aux power supplies,
bootstrap and desaturate for HV MOSFET and IGBT
driver, high frequency rectifiers in a cuk and sepic circuit for
LED lighting.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
PRIMARY CHARACTERISTICS
IF(AV)
1A
VR
1200 V
VF at IF
1.10 V
trr
75 ns
TJ max.
175 °C
Package
SMA (DO-214AC)
Circuit configuration
Single
MECHANICAL DATA
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Terminals: matte tin plated leads, solderable per
J-STD-002
Polarity: color band denotes cathode end
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
1200
V
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
TSp = 144 °C, D = 0.5
1
Non-repetitive peak surge current
IFSM
TJ = 25 °C, 8.3 ms sine pulse
21
Operating junction and storage temperatures
TJ, TStg
A
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage, blocking voltage
Forward voltage, per diode
SYMBOL
VBR, VR
VF
Reverse leakage current, per diode
IR
Junction capacitance
CT
TEST CONDITIONS
MIN.
TYP.
MAX.
1200
-
-
IF = 1 A
-
1.35
1.80
IF = 1 A, TJ = 125 °C
-
1.17
1.55
1.44
IR = 100 μA
IF = 1 A, TJ = 150 °C
-
1.10
VR = VR rated
-
-
5
TJ = 150 °C, VR = VR rated
-
-
50
VR = 1200 V
-
3.5
-
UNITS
V
μA
pF
Revision: 12-Jun-2023
Document Number: 96673
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
Peak recovery current
IRRM
Reverse recovery charge
Qrr
MIN.
TYP.
MAX.
IF = 0.5 A, IR = 1 A, Irr = 0.25 A
TEST CONDITIONS
-
-
75
TJ = 25 °C
-
99
-
TJ = 125 °C
-
137
-
-
3.5
-
-
4.5
-
TJ = 25 °C
-
150
-
TJ = 125 °C
-
286
-
MIN.
TYP.
MAX.
UNITS
-55
-
175
°C
IF = 1 A,
dIF/dt = 200 A/μs,
VR = 800 V
TJ = 25 °C
TJ = 125 °C
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage temperature range
TJ, TStg
Thermal resistance, junction to mount
RthJM (1)
Device mounted on PCB with
2 x 3.5 mm soldering lands
-
15
18
°C/W
RthJA
Device mounted on PCB with
recommended pad size
-
110
-
°C/W
Thermal resistance, junction to ambient
Approximate weight
0.07
Marking device
Case style SMA (DO-214AC)
g
1H12
100
100
175 °C
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
Note
(1) Thermal resistance junction to mount follows JEDEC® 51-14 transient dual interface test method (TDIM)
10
TJ = 175 °C
1
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
TJ = -40 °C
10
150 °C
1
125 °C
0.1
25 °C
0.01
0.001
0.0001
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
0
200
400
600
800
1000
1200
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 12-Jun-2023
Document Number: 96673
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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160
120
10
80
25 °C
40
20
0
200
400
600
800
1000
200
1200
300
400
500
600
VR - Reverse Voltage (V)
dIF/dt (A/µs)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt
180
350
170
300
125 °C
DC
160
Qrr (nC)
250
150
140
130
200
25 °C
150
Square wave (D = 0.50)
Rated VR applied
IF = 1 A,
VR = 800 V
100
120
50
110
0
0.2
0.4
0.6
0.8
1
200
1.2
250
300
350
400
450
500
550
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 4 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Typical Stored Charge vs. dIF/dt
2.5
12
2
10
600
IF = 1 A,
VR = 800 V
RMS limit
1.5
Irr (A)
Allowable Case Temperature (°C)
125 °C
100
60
1
Average Power Loss (W)
IF = 1 A,
VR = 800 V
140
trr (ns)
CT - Junction Capacitance (pF)
100
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
1
0.5
125 °C
8
6
25 °C
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
200
250
300
350
400
450
500
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 5 - Forward Power Loss Characteristics
Fig. 8 - Irr (A) vs. dIF/dt
550
600
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Revision: 12-Jun-2023
Document Number: 96673
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-E7MH0112-M3
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Vishay Semiconductors
ZthJC - Thermal Impedance
Junction to Case (°C/W)
100
10
0.50
0.20
0.10
0.05
0.02
0.01
DC
1
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 9 - Transient Thermal Impedance, Junction to Case
(3)
trr
ta
IF
0
tb
t0
t10 %
0.1 IRRM
(2)
IRRM
Qrr (4)
di(rec)M/dt (5)
(1) diF/dt
Fig. 10 - Reverse Recovery Waveform and Definitions
Notes
diF/dt - rate of change of current through zero crossing
(2) I
RRM - peak reverse recovery current
(3) t - reverse recovery time measured from t , crossing point of negative going I , to point t
rr
0
F
10%, 0.1 IRRM
(4) Q - area under curve defined by t and t
rr
0
10 %
(1)
t 10 %
Q rr =
I ( t ) dt
t0
(5)
di(rec)M/dt - peak rate of change of current during tb portion of trr
Revision: 12-Jun-2023
Document Number: 96673
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-E7MH0112-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
E
7
M
H
01
12
-M3
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Circuit configuration:
E = single diode
3
-
7 = FRED generation 7
4
-
M = SMA package
5
-
Process type,
H = hyperfast recovery
6
-
Current rating (01 = 1 A)
7
-
Voltage code (12 = 1200 V)
8
-
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-E7MH0112-M3/I
QUANTITY PER REEL
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
7500
7500
13"diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95400
Part marking information
www.vishay.com/doc?95472
Packaging information
www.vishay.com/doc?95404
SPICE model
www.vishay.com/doc?97060
Revision: 12-Jun-2023
Document Number: 96673
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
SMA
DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.066 (1.68)
MIN.
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 95400
Revision: 09-Jul-10
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www.vishay.com
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Revision: 01-Jan-2023
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Document Number: 91000
