VS-EBU15006HF4

VS-EBU15006HF4 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 150 A FRED Pt® FEATURES • Ultrafast recovery time • 175 °C max. operating junction temperature • Screw mounting only Cathode • AEC-Q101 qualified Anode • PowerTab® package • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PowerTab® BENEFITS • Reduced RFI and EMI • Higher frequency operation • Reduced snubbing PRODUCT SUMMARY • Reduced parts count Package PowerTab® IF(AV) 150 A VR 600 V VF at IF 1.08 V trr (typ.) 50 ns TJ max. 175 °C Diode variation Single die DESCRIPTION/APPLICATIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage SYMBOL TEST CONDITIONS MAX. UNITS 600 V VR Continuous forward current IF(AV) TC = 89 °C 150 Single pulse forward current IFSM TC = 25 °C 1200 Operating junction and storage temperatures TJ, TStg A -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 150 A - 1.27 1.63 IF = 150 A, TJ = 125 °C - 1.15 1.43 IF = 150 A, TJ = 175 °C - 1.08 1.32 VR = VR rated - - 8 μA IR = 200 μA UNITS V Reverse leakage current IR TJ = 150 °C, VR = VR rated - - 0.5 mA Junction capacitance CT VR = 600 V - 70 - pF Series inductance LS Measured lead to lead 5 mm from package body - 3.5 - nH Revision: 16-Jun-15 Document Number: 94806 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EBU15006HF4 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V Reverse recovery time trr Reverse recovery charge IRRM Qrr TYP. MAX. - 50 - IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 40 - TJ = 25 °C - 100 - TJ = 125 °C Peak recovery current MIN. UNITS ns - 210 - - 10.5 - - 22 - TJ = 25 °C - 550 - TJ = 125 °C - 2350 - MIN. TYP. MAX. - - 0.35 - 0.2 - - - 5.02 g - 0.18 - oz. 1.2 (10) - 2.4 (20) kgf · cm (lbf · in) IF = 50 A VR = 200 V dIF/dt = 200 A/μs TJ = 25 °C TJ = 125 °C A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance, junction to case RthJC Typical thermal resistance, case to heatsink RthCS TEST CONDITIONS K/W Mounting surface, flat, smooth and greased Weight Mounting torque Marking device UNITS Case style PowerTab® EBU15006H Revision: 16-Jun-15 Document Number: 94806 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EBU15006HF4 Vishay Semiconductors 1000 1000 175 °C 100 TJ = 175 °C 10 100 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 125 °C TJ = 25 °C 1 150 °C 125 °C 10 1 0.1 25 °C 0.01 0.001 0.0001 0.0 0.5 1.0 1.5 0 2.0 100 200 300 400 500 600 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 100 10 1 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 1 D = 0.5 D = 0.2 D = 0.1 0.1 Single Pulse (Thermal Resistance) D = 0.05 D = 0.02 D = 0.01 0.01 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 16-Jun-15 Document Number: 94806 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EBU15006HF4 www.vishay.com Vishay Semiconductors 250 160 120 DC 100 150 IF = 50 A, 25 °C 80 100 60 typical value 40 50 0 50 100 150 200 250 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/μs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 3500 350 3000 RMS Limit 300 IF = 50 A, 125 °C 2500 250 200 Qrr (nC) Average Power Loss (W) IF = 50 A, 125 °C 200 140 trr (ns) Allowable Case Temperature (°C) 180 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 150 100 50 2000 1500 IF = 50 A, 25 °C 1000 500 typical value 0 0 0 50 100 150 200 100 250 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/μs) Fig. 8 - Typical Stored Charge vs. dIF/dt Fig. 6 - Forward Power Loss Characteristics (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 16-Jun-15 Document Number: 94806 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EBU15006HF4 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- E B U 150 06 H F4 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Single diode 3 - PowerTab® 4 - Ultrafast recovery 5 - Current rating (150 = 150 A) 6 - Voltage rating (06 = 600 V) 7 - H = AEC-Q101 qualified 8 - Environmental digit: F4 = RoHS-compliant and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-EBU15006HF4 25 375 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95240 Part marking information www.vishay.com/doc?95467 Application note www.vishay.com/doc?95179 Revision: 16-Jun-15 Document Number: 94806 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors PowerTab® 15.90 (0.62) 15.60 (0.61) 11.90 (0.47) 12.40 (0.49) Lead 1 Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) Lead 2 4.95 (0.19) 4.75 (0.18) Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) 5.20 (0.20) 4.95 (0.19) 3.15 (0.12) 3.00 (0.11) 0.60 (0.02) 0.40 (0.01) 5.45 REF. (0.21 REF.) 39.95 (1.57) 39.55 (1.56) “G” see note 27.65 (1.08) 27.25 (1.07) 15.60 (0.61) 14.80 (0.58) 1.35 (0.05) 1.20 (0.04) 18.50 (0.73) 17.85 (0.70) 4.70 (0.19) 4.50 (0.18) 8.80 (0.35) 8.20 (0.32) DIMENSIONS in millimeters (inches) 1.30 (0.05) 1.10 (0.04) 12.20 (0.48) 12.00 (0.47) Lead assignments Lead 1 = Cathode Lead 2 = Anode Note: Outline conform to JEDEC® TO-275, except for dimension “G” only Revision: 10-Jun-2021 Document Number: 95240 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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