VS-EMF050J60U
www.vishay.com
Vishay Semiconductors
3-Levels Half Bridge Inverter Stage, 60 A, 57 A
FEATURES
• Warp1 and Warp2 PFC IGBT
• FRED Pt® and HEXFRED® antiparallel diodes
• FRED Pt® clamping diodes
• Integrated thermistor
• Square RBSOA
• Low internal inductances
EMIPAK2
• Low switching loss
• UL approved file E78996
PRODUCT SUMMARY
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
1° LEVEL OF HALF-BRIDGE
VCES
600 V
VCE(ON) typical at IC = 50 A
1.8 V
DESCRIPTION
IC at TC = 98 °C
50 A
VS-EMF050J60U is an integrated solution for a multi level
inverter half-bridge in a single package. The EMIPAK2
package is easy to use thanks to the solderable terminals
and provides improved thermal performance thanks to the
exposed substrate. The optimized layout also helps to
minimize stray parameters, allowing for better EMI
performance.
2° LEVEL OF HALF-BRIDGE
VCES
900 V
VCE(ON) typical at IC = 50 A
2.73 V
IC at TC = 93 °C
50 A
Speed
30 kHz to 150 kHz
Package
EMIPAK2
Circuit
3-levels half bridge inverter
stage
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Operating junction temperature
SYMBOL
TEST CONDITIONS
MAX.
TJ
150
Storage temperature range
TStg
-40 to +125
RMS isolation voltage
VISOL
TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s
3500
UNITS
°C
V
Q1 - Q4 IGBT
Collector to emitter voltage
VCES
600
Gate to emitter voltage
VGES
20
ICM
150
ILM (1)
150
Pulsed collector current
Clamped inductive load current
Continuous collector current
IC
Power dissipation
PD
TC = 25 °C
88
TC = 80 °C
60
TC = 25 °C
338
TC = 80 °C
189
V
A
A
W
Q2 - Q3 IGBT
Collector to emitter voltage
VCES
900
Gate to emitter voltage
VGES
20
Pulsed collector current
ICM
150
Clamped inductive load current
ILM
(2)
Continuous collector current
IC
Power dissipation
PD
150
TC = 25 °C
85
TC = 80 °C
57
TC = 25 °C
338
TC = 80 °C
189
V
A
A
W
Revision: 12-Jun-15
Document Number: 93494
1
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
600
V
D1 - D2 CLAMPING DIODE
Repetitive peak reverse voltage
VRRM
Single pulse forward current
IFSM
Diode continuous forward current
Power dissipation
IF
PD
10 ms sine or 6 ms rectangular pulse, TJ = 25 °C
270
TC = 25 °C
68
TC = 80 °C
46
TC = 25 °C
150
TC = 80 °C
84
10 ms sine or 6 ms rectangular pulse, TJ = 25 °C
280
TC = 25 °C
53
TC = 80 °C
36
A
W
D3 - D4 AP DIODE
Single pulse forward current
IFSM
Diode continuous forward current
IF
Power dissipation
PD
TC = 25 °C
176
TC = 80 °C
99
10 ms sine or 6 ms rectangular pulse, TJ = 25 °C
220
A
W
D5 - D6 AP DIODE
Single pulse forward current
IFSM
Diode continuous forward current
IF
Power dissipation
PD
TC = 25 °C
46
TC = 80 °C
31
TC = 25 °C
96
TC = 80 °C
54
A
A
W
Notes
• Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.
(1) V
CC = 400 V, VGE = 15 V, L = 500 μH, Rg = 22 , TJ = 150 °C
(2) V
CC = 720 V, VGE = 15 V, L = 500 μH, Rg = 22 , TJ = 150 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
600
-
-
V
VGE = 0 V, IC = 500 μA (25 °C to 125 °C)
-
0.1
-
V/°C
VGE = 15 V, IC = 27 A
-
1.44
1.75
VGE = 15 V, IC = 50 A
-
1.8
2.1
VGE = 15 V, IC = 27 A, TJ = 125 °C
-
1.7
2.05
VGE = 15 V, IC = 50 A, TJ = 125 °C
-
2.2
2.5
2.9
3.9
5.3
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
-
-10
-
mV/°C
Q1 - Q4 IGBT
Collector to emitter breakdown voltage
BVCES
Temperature coefficient of breakdown
voltage
BVCES/TJ
Collector to emitter voltage
Gate threshold voltage
Temperature coefficient of threshold
voltage
VCE(ON)
VGE(th)
VGE(th)/TJ
VGE = 0 V, IC = 500 μA
VCE = VGE, IC = 250 μA
V
Forward transconductance
gfe
VCE = 20 V, IC = 50 A
-
95
-
s
Transfer characteristics
VGE
VCE = 20 V, IC = 50 A
-
5.9
-
V
0.003
0.1
ICES
VGE = 0 V, VCE = 600 V
-
Zero gate voltage collector current
VGE = 0 V, VCE = 600 V, TJ = 125 °C
-
0.170
3
VGE = ± 20 V, VCE = 0 V
-
-
± 200
Gate to emitter leakage current
IGES
mA
nA
Revision: 12-Jun-15
Document Number: 93494
2
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
900
-
-
V
VGE = 0 V, IC = 500 μA (25 °C to 125 °C)
-
-8.5
-
V/°C
VGE = 15 V, IC = 27 A
-
2.45
2.8
VGE = 15 V, IC = 50 A
-
2.73
3.2
VGE = 15 V, IC = 27 A, TJ = 125 °C
-
2
2.35
Q2 - Q3 IGBT
Collector to emitter breakdown voltage
BVCES
Temperature coefficient of breakdown
voltage
BVCES/TJ
Collector to emitter voltage
VCE(ON)
VGE = 0 V, IC = 500 μA
VGE = 15 V, IC = 50 A, TJ = 125 °C
Gate threshold voltage
Temperature coefficient of threshold
voltage
VGE(th)
VGE(th)/TJ
-
2.43
2.9
2.8
4.5
6.3
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
-
-11.7
-
mV/°C
68
-
s
V
VCE = VGE, IC = 250 μA
Forward transconductance
gfe
VCE = 20 V, IC = 50 A
-
Transfer characteristics
VGE
VCE = 20 V, IC = 50 A
-
6.9
-
VGE = 0 V, VCE = 900 V
-
0.006
0.38
VGE = 0 V, VCE = 900 V, TJ = 125 °C
-
1.4
3
IGES
VGE = ± 20 V, VCE = 0 V
-
-
± 200
Cathode to anode blocking voltage
VBR
IR = 100 μA
600
-
-
1.84
2.12
VFM
IF = 30 A
-
Forward voltage drop
IF = 30 A, TJ = 125 °C
-
1.37
1.65
VR = 600 V
-
0.002
0.1
VR = 600 V, TJ = 125 °C
-
0.9
6
IF = 50 A
-
2.7
3.2
IF = 50 A TJ = 125 °C
-
2.8
3.3
IF = 30 A
-
1.93
2.37
IF = 30 A TJ = 125 °C
-
1.48
1.9
Zero gate voltage collector current
Gate to emitter leakage current
ICES
V
mA
nA
D1 - D2 CLAMPING DIODE
Reverse leakage current
IRM
V
mA
D3 - D4 AP DIODE
Forward voltage drop
VFM
V
D5 - D6 AP DIODE
Forward voltage drop
VFM
V
Revision: 12-Jun-15
Document Number: 93494
3
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Vishay Semiconductors
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Q1 - Q4 IGBT (WITH FREEWHEELING D1 - D2 CLAMPING DIODE)
Total gate charge (turn-on)
Qg
IC = 70 A
-
480
720
Gate to ermitter charge (turn-on)
Qge
VCC = 400 V
-
82
164
Gate to collector charge (turn-on)
Qgc
VGE = 15 V
-
160
260
Turn-on switching loss
EON
-
0.11
-
Turn-off switching loss
EOFF
-
0.76
-
Total switching loss
ETOT
-
0.87
-
Turn-on delay time
td(on)
-
182
-
-
46
-
-
207
-
-
92
-
Rise time
Turn-off delay time
Fall time
tr
td(off)
tf
Turn-on switching loss
EON
Turn-off switching loss
EOFF
Total switching loss
ETOT
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
IC = 50 A
VCC = 400 V
VGE = 15 V
Rg = 4.7
L = 500 μH (1)
tr
td(off)
-
0.25
-
IC = 50 A
VCC = 400 V
VGE = 15 V
Rg = 4.7
L = 500 μH
TJ = 125 °C (1)
-
0.88
-
-
1.13
-
-
183
-
-
47
-
-
211
-
VGE = 0 V
VCC = 30 V
f = 1 MHz
tf
-
101
Input capacitance
Cies
-
9500
Output capacitance
Coes
-
780
Reverse transfer capacitance
Cres
-
116
Reverse bias safe operating area
RBSOA
TJ = 150 °C, IC = 150 A
VCC = 400 V, VP = 600 V
Rg = 22 , VGE = 15 V to 0 V
nC
mJ
ns
mJ
ns
pF
Fullsquare
Q2 - Q3 IGBT (WITH FREEWHEELING D3 - D4 AP DIODE)
Total gate charge (turn-on)
Qg
IC = 50 A
-
320
480
Gate to emitter charge (turn-on)
Qge
VCC = 400 V
-
38
58
Gate to collector charge (turn-on)
Qgc
VGE = 15 V
-
106
160
Turn-on switching loss
EON
-
0.56
-
Turn-off switching loss
EOFF
IC = 50 A
-
0.68
-
Total switching loss
ETOT
VCC = 720 V
-
1.24
-
Turn-on delay time
td(on)
VGE = 15 V
Rg = 4.7
L = 500 μH (1)
-
152
-
Rise time
Turn-off delay time
Fall time
tr
td(off)
-
48
-
-
165
-
tf
-
100
-
Turn-on switching loss
EON
-
0.95
-
Turn-off switching loss
EOFF
-
2.18
-
Total switching loss
ETOT
-
3.13
-
Turn-on delay time
td(on)
IC = 50 A
VCC = 720 V
VGE = 15 V
Rg = 4.7
L = 500 μH
TJ = 125 °C (1)
-
154
-
-
52
-
-
168
-
-
360
-
VGE = 0 V
VCC = 30 V
f = 1 MHz
-
6600
-
-
400
-
-
90
-
Rise time
Turn-off delay time
Fall time
tr
td(off)
tf
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Reverse bias safe operating area
RBSOA
TJ = 150 °C, IC = 150 A
VCC = 720 V, VP = 900 V
Rg = 22 , VGE = 15 V to 0 V
nC
mJ
ns
mJ
ns
pF
Fullsquare
Revision: 12-Jun-15
Document Number: 93494
4
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VS-EMF050J60U
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Vishay Semiconductors
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
ns
D1 - D2 CLAMPING DIODE
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
VR = 200 V
IF = 30 A
dl/dt = 500 A/μs
-
50
80
-
7.5
11
A
-
185
440
nC
VR = 200 V
IF = 30 A
dl/dt = 500 A/μs, TJ = 125 °C
-
107
147
ns
-
18
22
A
-
955
1620
nC
VR = 400 V
IF = 50 A
dl/dt = 500 A/μs
-
114
150
ns
-
21
25
A
-
1200
1875
nC
VR = 400 V
IF = 50 A
dl/dt = 500 A/μs, TJ = 125 °C
-
170
210
ns
-
28
32
A
-
2160
3360
nC
VR = 200 V
IF = 30 A
dl/dt = 500 A/μs
-
46
77
ns
-
7
11
A
-
161
423
nC
VR = 200 V
IF = 30 A
dl/dt = 500 A/μs, TJ = 125 °C
-
106
138
ns
D3 - D4 AP DIODE
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
D5 - D6 AP DIODE
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
-
17
22
A
-
900
1518
nC
Note
(1) Energy losses include “tail” and diode reverse recovery.
THERMISTOR ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
Resistance
B value
SYMBOL
TEST CONDITIONS
B
TYP.
MAX.
4500
5000
5500
TJ = 100 °C
468
493
518
TJ = 25 °C/TJ = 50 °C
3206
3375
3544
R25
R100
MIN.
UNITS
K
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
MIN.
TYP.
MAX.
Q1 - Q4 IGBT - Junction to case thermal resistance (per switch)
-
-
0.37
Q2 - Q3 IGBT - Junction to case thermal resistance (per switch)
-
-
0.37
D1 - D2 Clamping diode - Junction to case thermal resistance (per diode)
SYMBOL
RthJC
UNITS
-
-
0.83
D3 - D4 AP diode - Junction to case thermal resistance (per diode)
-
-
0.71
D5 - D6 AP diode - Junction to case thermal resistance (per diode)
-
-
1.3
Q1 - Q4 IGBT - Case to sink thermal resistance (per switch)
-
0.31
-
-
0.31
-
-
0.51
-
D3 - D4 AP diode - Case to sink thermal resistance (per diode)
-
0.41
-
D5 - D6 AP diode - Case to sink thermal resistance (per diode)
-
0.62
-
Mounting torque (M4)
2
-
3
Nm
Weight
-
39
-
g
Q2 - Q3 IGBT - Case to sink thermal resistance (per switch)
D1 - D2 Clamping diode - Case to sink thermal resistance (per diode)
RthCS (1)
°C/W
Note
(1) Mounting surface flat, smooth, and greased
Revision: 12-Jun-15
Document Number: 93494
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Vishay Semiconductors
100
4.0
VGE = 15 V
90
VGE = 15 V
TJ = 125 °C
3.5
80
TJ = 150 °C
50
TJ = 25 °C
40
VCE (V)
60
IC (A)
100 A
3.0
70
30
2.5
50 A
2.0
1.5
27 A
20
1.0
10
0
0.5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VCE (V)
93494_01
10
100
160
100
TJ = 125 °C
90
VCE = 20 V
90
80
80
70
70
50
40
60
ICE (A)
VGE = 8 V
VGE = 10 V
VGE = 12 V
VGE = 15 V
VGE = 18 V
60
IC (A)
110
TJ (°C)
Fig. 4 - Typical Q1 - Q4 IGBT Collector to Emitter Voltage vs.
Junction Temperature
Fig. 1 - Typical Q1 - Q4 IGBT Output Characteristics
TJ = 125 °C
50
40
30
30
20
20
10
10
0
TJ = 25 °C
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VCE (V)
93494_02
3
4
5
6
7
8
VGE (V)
93494_05
Fig. 5 - Typical Q1 - Q4 IGBT Transfer Characteristics
Fig. 2 - Typical Q1 - Q4 IGBT Output Characteristics
4.5
160
140
TJ = 25 °C
4.0
120
DC
100
Vgeth (V)
Allowable Case Temperature (°C)
60
93494_04
80
60
3.5
3.0
TJ = 125 °C
40
2.5
20
2.0
0
0
93494_03
20
40
60
80
0
100
IC - Continuous Collector Current (A)
Fig. 3 - Maximum DC Q1 - Q4 IGBT Collector Current vs.
Case Temperature per Junction
93494_06
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
IC (mA)
Fig. 6 - Typical Q1 - Q4 IGBT Gate Threshold Voltage
Revision: 12-Jun-15
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Allowable Case Temperature (°C)
1000
100
IC (A)
10
1
0.1
160
140
120
100
DC
80
60
40
20
0.01
0
1
10
100
1000
VCE (V)
93494_07
0
5
10
15
20
25
30
35
40
45
50
IF - Continuous Forward Current (A)
93494_10
Fig. 10 - Maximum DC D5 - D6 Antiparallel Diode
Forward Current vs. Case Temperature per Junction
Fig. 7 - Q1 - Q4 IGBT Reverse Bias SOA
TJ = 150 °C, VGE = 15 V, Rg = 22
1
1.8
1.6
1.4
125 °C
Energy (mJ)
ICES (mA)
0.1
0.01
25 °C
0.001
1.2
1.0
Eoff
0.8
0.6
0.4
Eon
0.2
0.0001
100
0
200
300
400
500
600
VCES (V)
93494_08
10
20
30
40
50
60
70
80
90
IC (A)
93494_11
Fig. 11 - Typical Q1 - Q4 IGBT Energy Loss vs. IC
(with Freewheeling D1 - D2 Clamping Diode)
VCC = 400 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
Fig. 8 - Typical Q1 - Q4 IGBT Zero Gate Voltage Collector Current
100
1000
90
Switching Time (ns)
80
70
IF (A)
60
50
TJ = 125 °C
40
TJ = 25 °C
30
td(off)
td(on)
tf
100
tr
20
10
0
10
0
93494_09
0.5
1.0
1.5
2.0
2.5
3.0
VFM (V)
Fig. 9 - Typical D5 - D6 Antiparallel Diode Forward Characteristics
10
93494_12
20
30
40
50
60
70
80
90
IC (A)
Fig. 12 - Typical Q1 - Q4 IGBT Switching Time vs. IC
(with Freewheeling D1 - D2 Clamping Diode)
TJ = 125 °C, VCC = 400 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
Revision: 12-Jun-15
Document Number: 93494
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160
21
150
19
140
17
130
125 °C
15
110
100
90
125 °C
13
Irr (A)
trr (ns)
120
11
9
80
7
70
25 °C
5
25 °C
60
3
50
40
100
200
300
400
1
100
500
dIF/dt (A/μs)
93494_13
200
Fig. 13 - Typical D5 - D6 Antiparallel Diode Reverse
Recovery Time vs. dIF/dt
VR = 200 V, IF = 30 A
300
400
500
dIF/dt (A/μs)
93494_14
Fig. 14 - Typical D5 - D6 Antiparallel Diode Reverse
Recovery Current vs. dIF/dt
VR = 200 V, IF = 30 A
1100
1000
900
800
125 °C
Qrr (nC)
700
600
500
400
300
200
25 °C
100
0
100
200
300
400
500
dIF/dt (A/μs)
Fig. 15 - Typical D5 - D6 Antiparallel Diode Reverse Recovery Charge vs. dIF/dt
VR = 200 V, IF = 30 A
93494_15
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
0.01
0.001
0.00001
93494_16
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (Q1 - Q4 IGBT)
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ZthJC - Thermal Impedance
Junction to Case (°C/W)
10
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
93494_17
Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (D5 - D6 Antiparallel Diode)
Allowable Case Temperature (°C)
100
VGE = 15 V
90
80
70
IC (A)
60
TJ = 150 °C
50
40
TJ = 125 °C
TJ = 25 °C
30
20
10
160
140
120
DC
100
80
60
40
20
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VCE (V)
93494_18
0
Fig. 18 - Typical Q2 - Q3 IGBT Output Characteristics
40
60
80
100
Fig. 20 - Maximum DC Q2 - Q3 IGBT Collector Current vs.
Case Temperature per Junction
100
4.0
TJ = 125 °C
90
80
70
VGE = 15 V
VGE = 9 V
VGE = 12 V
VGE = 15 V
VGE = 18 V
3.5
100 A
3.0
VCE (V)
60
IC (A)
20
IC - Continuous Collector Current (A)
93494_20
50
40
50 A
2.5
2.0
30
27 A
20
1.5
10
0
1.0
0
93494_19
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VCE (V)
Fig. 19 - Typical Q2 - Q3 IGBT Output Characteristics
10
93494_21
60
110
160
TJ (°C)
Fig. 21 - Typical Q2 - Q3 IGBT Collector to Emitter Voltage vs.
Junction Temperature
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100
10
VCE = 20 V
90
80
125 °C
1
ICES (mA)
70
ICE (A)
60
TJ = 125 °C
50
TJ = 25 °C
40
0.1
0.01
30
25 °C
20
0.001
10
0
4
5
6
7
8
VGE (V)
93494_22
0.0001
100
9
200
300
400
Fig. 22 - Typical Q1 - Q4 IGBT Transfer Characteristics
500
600
700
800
900
VCES (V)
93494_25
Fig. 25 - Typical Q2 - Q3 IGBT Zero Gate Voltage Collector Current
5.5
100
90
5.0
TJ = 25 °C
TJ = 25 °C
80
4.5
TJ = 125 °C
60
IF (A)
Vgeth (V)
70
4.0
3.5
3.0
50
40
TJ = 125 °C
30
2.5
20
2.0
10
1.5
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
IC (mA)
93494_23
100
10
1
0.1
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VFM (V)
Fig. 26 - Typical D3 - D4 Antiparallel Diode Forward Characteristics
Allowable Case Temperature (°C)
1000
160
140
120
100
DC
80
60
40
20
0.01
0
1
93494_24
0.5
93494_26
Fig. 23 - Typical Q2 - Q3 IGBT Gate Threshold Voltage
IC (A)
0
10
100
1000
VCE (V)
Fig. 24 - Q2 - Q3 IGBT Reverse Bias SOA
TJ = 150 °C, VGE = 15 V, Rg = 22
0
93494_27
5
10 15 20 25 30 35 40 45 50 55 60
IF - Continuous Forward Current (A)
Fig. 27 - Maximum DC D3 - D4 Antiparallel Diode
Forward Current vs. Case Temperature per Junction
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4.2
280
3.8
260
3.4
240
220
Eoff
2.6
trr (ns)
Energy (mJ)
3.0
2.2
1.8
125 °C
200
180
160
1.4
1.0
140
Eon
25 °C
120
0.6
0.2
10
20
30
40
50
60
70
80
100
100
90
IC (A)
93494_28
200
Fig. 28 - Typical Q2 - Q3 IGBT Energy Loss vs. IC
(with Freewheeling D2 - D3 AP Diode)
VCC = 720 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
300
400
500
dIF/dt (A/μs)
93494_30
Fig. 30 - Typical D3 - D4 Antiparallel Diode Reverse
Recovery Time vs. dIF/dt
VR = 400 V, IF = 50 A
1000
32
24
td(off)
td(on)
100
20
Irr (A)
Switching Time (ns)
28
tf
125 °C
25 °C
16
tr
12
8
10
10
93494_29
20
30
40
50
60
70
80
4
100
90
IC (A)
200
400
500
dIF/dt (A/μs)
93494_31
Fig. 29 - Typical Q2 - Q3 IGBT Switching Time vs. IC
(with Freewheeling D2 - D3 AP Diode)
TJ = 125 °C, VCC = 720 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
300
Fig. 31 - Typical D3 - D4 Antiparallel Diode Reverse
Recovery Current vs. dIF/dt
VR = 400 V, IF = 50 A
2500
2250
Qrr (nC)
2000
125 °C
1750
1500
1250
1000
25 °C
750
500
100
93494_32
200
300
400
500
dIF/dt (A/μs)
Fig. 32 - Typical D3 - D4 Antiparallel Diode Reverse Recovery Charge vs. dIF/dt
VR = 400 V, IF = 50 A
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ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
93494_33
Fig. 33 - Maximum Thermal Impedance ZthJC Characteristics (Q2 - Q3 IGBT)
ZthJC - Thermal Impedance
Junction to Case (°C/W)
10
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
93494_34
Fig. 34 - Maximum Thermal Impedance ZthJC Characteristics (D3 - D4 Antiparallel Diode)
Allowable Case Temperature (°C)
100
90
80
70
TJ = 125 °C
IF (A)
60
50
TJ = 25 °C
40
30
20
10
160
140
120
DC
100
80
60
40
20
0
0
0
93494_35
0.5
1.0
1.5
2.0
2.5
3.0
VFM (V)
Fig. 35 - Typical D1 - D2 Clamping Diode Forward Characteristics
0
93494_36
10
20
30
40
50
60
70
IF - Continuous Forward Current (A)
Fig. 36 - Maximum DC D1 - D2 Clamping Diode
Forward Current vs. Case Temperature per Junction
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10
21
19
1
17
15
0.1
125 °C
13
Irr (A)
IR (mA)
125 °C
11
0.01
9
7
25 °C
0.001
25 °C
5
3
0.0001
100
200
300
400
500
1
100
600
VR (V)
93494_37
200
Fig. 37 - Typical D1 - D2 Clamping Diode
Reverse Leakage Current
300
400
500
dIF/dt (A/μs)
93494_39
Fig. 39 - Typical D1 - D2 Clamping Diode Reverse
Recovery Current vs. dIF/dt
VR = 200 V, IF = 30 A
1000
160
900
140
800
125 °C
Qrr (nC)
120
trr (ns)
125 °C
700
100
80
600
500
400
300
25 °C
200
60
25 °C
100
40
100
200
300
400
0
100
500
dIF/dt (A/μs)
93494_38
200
300
400
500
dIF/dt (A/μs)
93494_40
Fig. 40 - Typical D1 - D2 Clamping Diode Reverse
Recovery Charge vs. dIF/dt
VR = 200 V, IF = 30 A
Fig. 38 - Typical D1 - D2 Clamping Diode Reverse
Recovery Time vs. dIF/dt
VR = 200 V, IF = 30 A
ZthJC - Thermal Impedance
Junction to Case (°C/W)
10
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
0.01
0.001
0.00001
93494_41
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 41 - Maximum Thermal Impedance ZthJC Characteristics (D1 - D2 Clamping Diode)
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ORDERING INFORMATION TABLE
Device code
VS-
EM
F
050
J
60
U
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Package indicator (EM = EMIPAK2)
3
-
Circuit configuration (F = 3-levels half-bridge inverter stage)
4
-
Current rating (050 = 50 A)
5
-
Die technology (J = Warp2 IGBT)
6
-
Voltage rating (60 = 600 V)
7
-
U = Ultrafast
TYPICAL CONNECTION
Note
• Please refer to lead assignment for correct pin configuration. This diagram shows electrical connections only.
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CIRCUIT CONFIGURATION
+ 400 V
17
35
Q1
D5
Inv_Drv1
9
33
D1
11
Q2
D3
Inv_Drv2
8
4
14
15
MID
Q3
D4
3
Inv_Drv3
29
D2
2
30 VMID
36
Q4
1
D6
Inv_Drv3
- 400 V
23
5
24
Th
26
6
27
PACKAGE
6
5
3
2
1
4
8
14 15
9
11
33
29
36 30
24 23
17
35
26
27
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95436
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Outline Dimensions
Vishay Semiconductors
EMIPAK2
DIMENSIONS in millimeters
15.2
12.7
8.9
Front view
55 ± 0.3
Pins position
with tolerance
Ø 1 ± 0.1
M4
Ø 0.4
5.1
14
11.4
10.2
7.6 7.6
6.4
3.8
2.6
1.3
13.3
3.2
1.9
1.3
5.1
2.5
6.3
Detail “A” Scale 10:1
Detail “A”
5°
F
14
F
7
15.9
12.1
8.3
5.7
39 ± 0.3
5
62 ± 0.3
41.5
23
53
62 ± 0.3
Ø2
Ø
12.1
20.5 ± 1
3 ref.
Top view
9.5 9.5
15.9
10.8
Side view
7
Ø 4.3
5.7
1.9
12
20.5 ± 1
17 ± 1
3.8
16.8
8.9
10.1 12.7
11.4 16.5
16.5
20.3
20.3
24.1
24.1
23.8
40.6
58 ± 0.3
Ceramic gap
Flat metal plate or
with optional M4 thread
Document Number: 95436
Revision: 27-Jan-11
0.1
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
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Document Number: 91000
