VS-EPH6007L-N3

VS-EPH6007L-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 60 A FRED Pt® FEATURES Base cathode • Low forward voltage drop 2 • Hyperfast soft recovery time • 175 °C operating junction temperature 2 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 3 Anode 1 Cathode 3 VS-EPH6007L-N3 TO-247AD 2L DESCRIPTION / APPLICATIONS Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. PRIMARY CHARACTERISTICS IF(AV) 60 A VR 650 V The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. VF at IF 1.4 V trr typ. 65 ns TJ max. 175 °C Package TO-247AD 2L Circuit configuration Single These devices are intended for use in PFC Boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. The extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS 650 V Repetitive peak reverse voltage VRRM Average rectified forward current IF(AV) TC = 98 °C (d = 0.50) 60 Non-repetitive peak surge current IFSM TC = 25 °C, tp = 8.3 ms; half sine wave 520 Operating junction and storage temperatures TJ, TStg A -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS IR = 100 μA IF = 60 A MIN. TYP. MAX. 650 - - - 1.8 2.2 IF = 60 A, TJ = 150 °C - 1.4 1.8 VR = VR rated - 0.02 30 TJ = 150 °C, VR = VR rated - - 300 UNITS V μA Reverse leakage current IR Junction capacitance CT VR = 650 V - 37 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH Revision: 15-May-2018 Document Number: 96451 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EPH6007L-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. - 44 - TJ = 25 °C - 65 - TJ = 125 °C - 94 - - 21 - - 40 - IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V Reverse recovery time Peak recovery current trr IRRM IF = 60 A TJ = 25 °C dIF/dt = 1000 A/μs TJ = 125 °C VR = 400 V UNITS ns A TJ = 25 °C - 720 - TJ = 125 °C - 2300 - MIN. TYP. MAX. UNITS TJ, TStg -55 - 175 °C Thermal resistance, junction to case RthJC - - 0.65 °C/W Thermal resistance, case to heatsink RthCS - 0.5 - - 5.5 - g - 0.2 - oz. 1.2 (10) - 2.4 (20) kgf · cm (lbf · in) Reverse recovery charge Qrr nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range SYMBOL TEST CONDITIONS Mounting surface, flat, smooth, and greased Weight Mounting torque Marking device Case style TO-247 2L EPH6007L Revision: 15-May-2018 Document Number: 96451 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EPH6007L-N3 Vishay Semiconductors 100 1000 175 °C IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 175 °C 10 1 TJ = 150°C 100 150 °C 10 1 0.1 25 °C 0.01 TJ = 25 °C 0.1 0.001 0 0.5 1.0 1.5 2.0 2.5 0 100 200 300 400 500 600 700 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 100 10 0 100 200 300 400 500 600 700 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 0.01 DC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 15-May-2018 Document Number: 96451 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EPH6007L-N3 www.vishay.com Vishay Semiconductors 170 160 IF = 60 A, TJ = 125 °C 150 160 140 trr (ns) Allowable Case Temperature (°C) 180 DC 140 130 120 110 120 100 Square wave (D = 0.50) Rated VR applied 90 100 IF = 60 A, TJ = 25 °C 80 See note 70 (1) 80 60 0 10 20 30 40 50 60 70 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 2400 2200 RMS limit 140 2000 IF = 60 A, TJ = 125 °C 1800 120 1600 100 Qrr (nC) Average Power Loss (W) 160 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 80 60 40 1400 1200 1000 800 IF = 60 A, TJ = 25 °C 600 400 20 200 0 0 0 20 40 60 80 100 100 1000 dIF/dt (A/μs) IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 15-May-2018 Document Number: 96451 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-EPH6007L-N3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- E P H 60 07 L -N3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - E = single diode 3 - P = TO-247 4 - H = hyperfast recovery time 5 - Current code (60 = 60 A) 6 - Voltage code (07 = 650 V) 7 - L = long lead 8 - Environmental digit: -N3 = halogen-free, RoHS-compliant and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-EPH6007L-N3 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95536 Part marking information www.vishay.com/doc?95648 Revision: 15-May-2018 Document Number: 96451 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 2L DIMENSIONS in millimeters and inches A A (3) (6) F P E B (2) R/2 A2 S (Datum B) Ø K M D BM F P1 A D2 Q 2xR (2) D1 (4) D 1, 2 4 D 3 Thermal pad (5) L1 C L See view B (4) E1 A 0.01 M D B M View A - A C 2 x b2 2xb 2x e A1 0.10 M C A M (b1, b3) Plating Base metal D D (c) c1 C C (b, b2) (4) Section C - C, D - D SYMBOL MILLIMETERS View B INCHES MIN. MAX. MIN. MAX. A 4.65 5.31 0.183 0.209 A1 2.21 2.59 0.087 0.102 NOTES SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. E 15.29 15.87 0.602 0.625 E1 13.46 - 0.53 - A2 1.50 2.49 0.059 0.098 e 5.46 BSC b 0.99 1.40 0.039 0.055 ØK 0.254 b1 0.99 1.35 0.039 0.053 L 19.81 20.32 0.780 0.800 b2 1.65 2.39 0.065 0.094 L1 3.71 4.29 0.146 0.169 b3 1.65 2.34 0.065 0.092 ØP 3.56 3.66 0.14 0.144 c 0.38 0.89 0.015 0.035 Ø P1 - 6.98 - 0.275 NOTES 3 0.215 BSC 0.010 c1 0.38 0.84 0.015 0.033 Q 5.31 5.69 0.209 0.224 D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 0.178 0.216 D1 13.08 - 0.515 - 4 S D2 0.51 1.35 0.020 0.053 5.51 BSC 0.217 BSC Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 28-May-2018 Document Number: 95536 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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