VS-EPU6006L-M3, VS-APU6006L-M3
www.vishay.com
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 60 A FRED Pt®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
3
2
1
TO-247 long lead 2-pins
• Designed and qualified
commercial qualification
3
1
to
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
TO-247 long lead 3-pins
Cathode to base
2
according
Cathode to base
2, 4
DESCRIPTION / APPLICATIONS
3
Anode
1
Cathode
VS-EPU6006L-M3
VS-EPU60/VS-APU60... series are the state of the art
ultrafast recovery rectifiers designed with optimized
performance of forward voltage drop and ultrafast recovery
3
Anode
1
Anode
time.
VS-APU6006L-M3
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
PRODUCT SUMMARY
Package
TO-247 long lead 2 pins,
TO-247 long lead 3 pins
IF(AV)
60 A
VR
600 V
VF at IF
1.05 V
trr typ.
32 ns
These devices are intended for use in the output rectification
stage of SMPS, welding, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
TJ max.
175 °C
Diode variation
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
600
V
Repetitive peak reverse voltage
VRRM
Average rectified forward current in DC
IF(AV)
TC = 116 °C
60
Single pulse forward current
IFSM
TC = 25 °C
600
Operating junction and storage temperatures
TJ, TStg
A
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
Reverse leakage current
IR
Junction capacitance
CT
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
IF = 60 A
-
1.2
1.5
IF = 60 A, TJ = 125 °C
-
1.1
1.3
IR = 100 μA
IF = 60 A, TJ = 175 °C
-
1.05
1.2
VR = VR rated
-
0.2
30
TJ = 150 °C, VR = VR rated
-
-
200
VR = 600 V
-
38
-
UNITS
V
μA
pF
Revision: 10-Jul-15
Document Number: 95713
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-EPU6006L-M3, VS-APU6006L-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1 A, dIF/dt = 200 A/μs, VR = 30 V
MIN.
TYP.
MAX.
-
32
-
UNITS
TJ = 25 °C
-
110
-
TJ = 125 °C
-
200
-
-
10
-
-
19
-
TJ = 25 °C
-
530
-
TJ = 125 °C
-
1900
-
MIN.
TYP.
MAX.
UNITS
TJ, TStg
-65
-
175
°C
Thermal resistance,
junction to case
RthJC
-
-
0.65
Thermal resistance,
junction to ambient
RthJA
Typical socket mount
-
-
70
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth
and greased
-
0.5
-
-
6
-
-
0.21
-
oz.
-
1.2
(10)
kgf. cm
(lbf in)
Reverse recovery time
Peak recovery current
Reverse recovery charge
trr
IRRM
Qrr
TJ = 25 °C
TJ = 125 °C
IF = 60 A
dIF/dt = 200 A/μs
VR = 200 V
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
SYMBOL
TEST CONDITIONS
Weight
6
(5)
Mounting torque
Marking device
Case style TO-247 long lead 2 pins
EPU6006L
Case style TO-247 long lead 3 pins
APU6006L
°C/W
g
Revision: 10-Jul-15
Document Number: 95713
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-EPU6006L-M3, VS-APU6006L-M3
Vishay Semiconductors
1000
1000
175 °C
100
TJ = 175 °C
10
TJ = 150 °C
TJ = 25 °C
1
0.0
100
IR - Reverse Current (µA)
IF - InstantaneousForward Current (A)
www.vishay.com
150 °C
10
125 °C
1
0.1
25 °C
0.01
0.001
0.5
1.0
1.5
2.0
0
2.5
100
200
300
400
500
600
VR - Reverse Voltage (V)
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
1000
100
10
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Impedance (A)
1
D = 0.5
D = 0.2
0.1
D = 0.1
Single Pulse
(Thermal Resistance)
D = 0.05
D = 0.02
D = 0.01
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 10-Jul-15
Document Number: 95713
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-EPU6006L-M3, VS-APU6006L-M3
Vishay Semiconductors
180
260
170
240
160
220
150
200
140
180
trr (ns)
Allowable Case Temperature (°C)
www.vishay.com
130
DC
120
160
140
IF = 60 A, 25 °C
120
110
100
100
Square wave (d = 0.5)
rated VR applied
90
80
60
80
40
100
70
0
20
40
60
80
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
4500
120
RMS Limit
4000
100
3500
80
IF = 60 A, 125 °C
3000
Qrr (nC)
Average Power Loss (W)
IF = 60 A, 125 °C
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
60
40
20
20
40
60
80
2000
1500
IF = 60 A, 25 °C
1000
500
0
0
2500
100
typical value
0
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 6 - Forward Power Loss Characteristics
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
(1)
Revision: 10-Jul-15
Document Number: 95713
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-EPU6006L-M3, VS-APU6006L-M3
www.vishay.com
Vishay Semiconductors
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(4) Qrr - area under curve defined by trr
and IRRM
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
E
P
U
60
06
L
-M3
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Circuit configuration:
• A = single diode 3-pin
• E = single diode 2-pin
3
-
P = TO-247
4
-
U = ultrafast recovery time
5
-
Current code (60 = 60 A)
6
-
Voltage code (06 = 600 V)
7
-
L = long lead
8
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant and termination lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-EPU6006L-M3
30
300
Antistatic plastic tube
VS-APU6006L-M3
30
300
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-247 3-pin LL
www.vishay.com/doc?95599
TO-247AC 2-pin LL
www.vishay.com/doc?95598
TO-247 3-pin LL
www.vishay.com/doc?95593
TO-247 2-pin LL
www.vishay.com/doc?95592
Revision: 10-Jul-15
Document Number: 95713
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-247 2 Pin Long Lead
DIMENSIONS in millimeters
D
A
Ejector pin hole thickness (h)
L2
E2
E1
H
c1
L
L1
Ø
A1
b1
e
SYMBOL
b
c
DIMENSIONS IN MILLIMETERS
DIMENSIONS IN INCHES
MIN.
MAX.
MIN.
MAX.
A
4.850
5.150
0.191
0.200
A1
2.200
2.600
0.087
0.102
b
1.000
1.400
0.039
0.055
b1
1.800
2.200
0.071
0.087
c
0.500
0.700
0.020
0.028
c1
1.900
2.100
0.075
0.083
D
15.450
15.750
0.608
0.620
E1
3.500 Ref.
E2
3.600 Ref.
0.138 Ref.
0.142 Ref.
L
40.900
41.300
1.610
1.626
L1
24.800
25.100
0.976
0.988
L2
20.300
20.600
0.799
0.811
Ø
7.100
7.300
0.280
0.287
e
10.900 Typ.
0.429 Typ.
H
5.980 Typ.
0.235 Typ.
h
Revision: 08-Apr-14
0.000
0.300
0.000
0.012
Document Number: 95598
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-247 3 Pin Long Lead
DIMENSIONS in millimeters
D
A
Ejector pin hole thickness (h)
E2
L2
E1
H
c1
L
L1
Ø
A1
b2
b1
e
SYMBOL
c
b
DIMENSIONS IN MILLIMETERS
DIMENSIONS IN INCHES
MIN.
MAX.
MIN.
MAX.
0.200
A
4.850
5.150
0.191
A1
2.200
2.600
0.087
0.102
b
1.000
1.400
0.039
0.055
b1
2.800
3.200
0.110
0.126
b2
1.800
2.200
0.071
0.087
c
0.500
0.700
0.020
0.028
c1
1.900
2.100
0.075
0.083
D
15.450
15.750
0.608
0.620
E1
3.500 Ref.
E2
3.600 Ref.
0.138 Ref.
0.142 Ref.
L
40.900
41.300
1.610
1.626
L1
24.800
25.100
0.976
0.988
L2
20.300
20.600
0.799
0.811
Ø
7.100
7.300
0.280
0.287
e
5.450 Typ.
0.215 Typ.
H
5.980 Typ.
0.235 Typ.
h
Revision: 07-Apr-14
0.000
0.300
0.000
0.012
Document Number: 95599
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000
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VS-APU6006L-M3 VS-EPU6006L-M3