VS-EPU6006L-N3
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Vishay Semiconductors
Ultrafast Soft Recovery Diode, 60 A FRED Pt®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
Cathode to base
2
• 175 °C operating junction temperature
• Designed and qualified
commercial qualification
2
1
TO-247AD 2L
to
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
3
Anode
1
Cathode
3
according
DESCRIPTION / APPLICATIONS
VS-EPU60... series are the state of the art ultrafast recovery
rectifiers designed with optimized performance of forward
voltage drop and ultrafast recovery time.
PRODUCT SUMMARY
Package
TO-247AD 2L
IF(AV)
60 A
VR
600 V
VF at IF
1.05 V
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, welding, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
trr typ.
32 ns
TJ max.
175 °C
Diode variation
Single die
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
600
V
Repetitive peak reverse voltage
VRRM
Average rectified forward current in DC
IF(AV)
TC = 116 °C
60
Single pulse forward current
IFSM
TC = 25 °C, tp = 8.3 ms; half sine wave
600
Operating junction and storage temperatures
TJ, TStg
A
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
Reverse leakage current
IR
Junction capacitance
CT
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
IF = 60 A
-
1.2
1.5
IF = 60 A, TJ = 125 °C
-
1.1
1.3
IF = 60 A, TJ = 175 °C
-
1.05
1.2
VR = VR rated
-
0.2
30
TJ = 150 °C, VR = VR rated
-
-
200
VR = 600 V
-
38
-
IR = 100 μA
UNITS
V
μA
pF
Revision: 23-Jan-17
Document Number: 95944
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VS-EPU6006L-N3
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1 A, dIF/dt = 200 A/μs, VR = 30 V
MIN.
TYP.
MAX.
-
32
-
UNITS
TJ = 25 °C
-
110
-
TJ = 125 °C
-
200
-
-
10
-
-
19
-
TJ = 25 °C
-
530
-
TJ = 125 °C
-
1900
-
MIN.
TYP.
MAX.
UNITS
TJ, TStg
-55
-
175
°C
Thermal resistance,
junction to case
RthJC
-
-
0.65
Thermal resistance,
junction to ambient
RthJA
Typical socket mount
-
-
70
Thermal resistance,
case to heat sink
RthCS
Mounting surface, flat, smooth
and greased
-
0.5
-
-
6
-
-
0.21
-
oz.
-
1.2
(10)
kgf. cm
(lbf in)
Reverse recovery time
Peak recovery current
Reverse recovery charge
trr
IRRM
Qrr
TJ = 25 °C
TJ = 125 °C
IF = 60 A
dIF/dt = 200 A/μs
VR = 200 V
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
SYMBOL
TEST CONDITIONS
Weight
6
(5)
Mounting torque
Marking device
Case style TO-247AD 2L
°C/W
g
EPU6006L
Revision: 23-Jan-17
Document Number: 95944
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-EPU6006L-N3
Vishay Semiconductors
1000
1000
175 °C
100
TJ = 175 °C
10
TJ = 150 °C
TJ = 25 °C
1
0.0
100
IR - Reverse Current (µA)
IF - InstantaneousForward Current (A)
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150 °C
10
125 °C
1
0.1
25 °C
0.01
0.001
0.5
1.0
1.5
2.0
0
2.5
100
200
300
400
500
600
VR - Reverse Voltage (V)
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
1000
100
10
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Impedance (A)
1
D = 0.5
D = 0.2
0.1
D = 0.1
Single Pulse
(Thermal Resistance)
D = 0.05
D = 0.02
D = 0.01
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 23-Jan-17
Document Number: 95944
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VS-EPU6006L-N3
Vishay Semiconductors
180
260
170
240
160
220
150
200
140
180
trr (ns)
Allowable Case Temperature (°C)
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130
DC
120
160
140
IF = 60 A, 25 °C
120
110
100
100
Square wave (d = 0.5)
rated VR applied
90
80
60
80
40
100
70
0
20
40
60
80
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
4500
120
RMS Limit
4000
100
3500
80
IF = 60 A, 125 °C
3000
Qrr (nC)
Average Power Loss (W)
IF = 60 A, 125 °C
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
60
40
20
20
40
60
80
2000
1500
IF = 60 A, 25 °C
1000
500
0
0
2500
100
typical value
0
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 6 - Forward Power Loss Characteristics
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
(1)
Revision: 23-Jan-17
Document Number: 95944
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-EPU6006L-N3
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Vishay Semiconductors
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(4) Qrr - area under curve defined by trr
and IRRM
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
E
P
U
60
06
L
-N3
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Circuit configuration:
3
-
P = TO-247
4
-
U = ultrafast recovery time
5
-
Current code (60 = 60 A)
6
-
Voltage code (06 = 600 V)
7
-
L = long lead
8
-
Environmental digit:
-N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
• E = single diode 2 pins
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-EPU6006L-N3
25
500
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
TO-247AD 2L
www.vishay.com/doc?95536
Part marking information
TO-247AD 2L
www.vishay.com/doc?95648
Revision: 23-Jan-17
Document Number: 95944
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
TO-247AD 2L
DIMENSIONS in millimeters and inches
A
A
(3)
(6) F P
E
B
(2) R/2
A2
S
(Datum B)
Ø K M D BM
F P1
A
D2
Q
2xR
(2)
D1 (4)
D
1, 2
4
D
3
Thermal pad
(5) L1
C
L
See view B
(4)
E1
A
0.01 M D B M
View A - A
C
2 x b2
2xb
2x e
A1
0.10 M C A M
(b1, b3)
Plating
Base metal
D D
(c)
c1
C
C
(b, b2)
(4)
Section C - C, D - D
SYMBOL
MILLIMETERS
View B
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.65
5.31
0.183
0.209
A1
2.21
2.59
0.087
0.102
NOTES
SYMBOL
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
E
15.29
15.87
0.602
0.625
E1
13.46
-
0.53
-
A2
1.50
2.49
0.059
0.098
e
5.46 BSC
b
0.99
1.40
0.039
0.055
ØK
0.254
b1
0.99
1.35
0.039
0.053
L
19.81
20.32
0.780
0.800
b2
1.65
2.39
0.065
0.094
L1
3.71
4.29
0.146
0.169
b3
1.65
2.34
0.065
0.092
ØP
3.56
3.66
0.14
0.144
c
0.38
0.89
0.015
0.035
Ø P1
-
6.98
-
0.275
NOTES
3
0.215 BSC
0.010
c1
0.38
0.84
0.015
0.033
Q
5.31
5.69
0.209
0.224
D
19.71
20.70
0.776
0.815
3
R
4.52
5.49
0.178
0.216
D1
13.08
-
0.515
-
4
S
D2
0.51
1.35
0.020
0.053
5.51 BSC
0.217 BSC
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
Revision: 28-May-2018
Document Number: 95536
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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