VS-ETH0806-M3

VS-ETH0806-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® FEATURES Base cathode 2 2 • Hyperfast soft recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current 1 1 Cathode 3 • True 2 pin package 3 Anode • Designed and qualified according to JEDEC®-JESD 47 2L TO-220AC • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 8A VR 600 V VF at IF 1.3 V DESCRIPTION / APPLICATIONS Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. trr (typ.) 16 ns TJ max. 175 °C Package 2L TO-220AC Circuit configuration Single The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. The extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Peak repetitive reverse voltage VRRM Average rectified forward current in DC IF(AV) TC = 146 °C 8 Non-repetitive peak surge current IFSM TJ = 25 °C 80 Repetitive peak surge current Square wave 20 kHz duty cycle (50 %) IFRM TC = 137 °C 16 Operating junction and storage temperatures TJ, TStg A -65 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 8 A - 2.0 2.65 1.85 IR = 100 μA IF = 8 A, TJ = 150 °C - 1.3 VR = VR rated - 0.02 12 TJ = 150 °C, VR = VR rated - 15 100 UNITS V Reverse leakage current IR Junction capacitance CT VR = 600 V - 6 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8 - nH μA Revision: 22-Jul-2019 Document Number: 96629 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETH0806-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time SYMBOL trr MIN. TYP. MAX. IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V TEST CONDITIONS - 16 23 IF = 8 A, dIF/dt = 100 A/μs, VR = 30 V - 20 28 TJ = 25 °C - 21 - - 39 - - 3 - - 5 - TJ = 125 °C Peak recovery current Reverse recovery charge IRRM Qrr Reverse recovery time trr Peak recovery current IRRM TJ = 25 °C TJ = 125 °C IF = 8 A, dIF/dt = 200 A/μs, VR = 390 V TJ = 25 °C - 36 - TJ = 125 °C - 108 - UNITS ns A nC - 30 - - 13 - A - 205 - nC MIN. TYP. MAX. UNITS TJ, TStg -65 - 175 °C Thermal resistance, junction-to-case RthJC - 2.0 2.6 Thermal resistance, junction-to-ambient RthJA Typical socket mount - - 70 Typical thermal resistance, case-to-heatsink RthCS Mounting surface, flat, smooth and greased - 0.5 - - 2 - g - 0.07 - oz. 6 (5) - 12 (10) kgf · cm (lbf · in) Reverse recovery charge TJ = 125 °C Qrr IF = 8 A, dIF/dt = 600 A/μs, VR = 390 V ns THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range SYMBOL TEST CONDITIONS Weight Mounting torque Marking device Case style 2L TO-220AC °C/W ETH0806 Revision: 22-Jul-2019 Document Number: 96629 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETH0806-M3 Vishay Semiconductors 100 100 175 °C TJ = 175 °C 10 TJ = 150 °C 1 TJ = 25 °C 0.1 0.0 150 °C 10 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) www.vishay.com 125 °C 1 100 °C 75 °C 0.1 50 °C 0.01 25 °C 0.001 0.0001 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 100 200 300 400 500 600 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage C - Junction Capacitance (pF) 1000 100 10 1 0 100 200 300 400 500 600 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 D = 0.5 1 D = 0.2 D = 0.1 0.1 D = 0.05 D = 0.02 D = 0.01 0.01 1E-05 Single Pulse (Thermal Resistance) 1E-04 1E-03 1E-02 1E-01 1E+00 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 22-Jul-2019 Document Number: 96629 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETH0806-M3 Vishay Semiconductors 180 50 45 170 40 160 DC IF = 8 A, 125 °C 35 trr (ns) Allowable Case Temperature (°C) www.vishay.com 150 30 25 140 IF = 8 A, 25 °C 20 130 15 10 100 120 0 2 4 6 8 10 1000 dIF/dt (A/μs) IF(AV) - Average Forward Current (A) Fig. 7 - Typical Reverse Recovery vs. dIF/dt Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 20 300 250 RMS Limit 16 IF = 8 A, 125 °C 14 200 12 Qrr (nC) IF - Average Power Loss (W) 18 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 10 8 6 4 150 IF = 8 A, 25 °C 100 50 2 0 0 0 2 4 6 8 10 100 12 1000 dIF/dt (A/μs) IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 22-Jul-2019 Document Number: 96629 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETH0806-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- E T H 08 06 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Circuit configuration: 3 - T = 2L TO-220AC 4 - H = hyperfast recovery time 5 - Current code: 08 = 8 A E = single 6 - Voltage code: 06 = 600 V 7 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-ETH0806-M3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96156 Part marking information www.vishay.com/doc?95391 Revision: 22-Jul-2019 Document Number: 96629 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 2L TO-220AC DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A ØP Q B A (6) (E) A1 Thermal pad 1 (H1) H1 C D2 (6) D 2 D D L1 (2) C (6) c 2xb D1 2 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AC SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 ØP Q MILLIMETERS MIN. MAX. 11.68 13.30 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.524 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6, 7 3, 6 6 6 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC® TO-220, except D2 Revision: 13-Jun-2019 Document Number: 96156 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2019 1 Document Number: 91000