VS-ETH1506-M3

VS-ETH1506-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt® FEATURES Base cathode 2 2 • Hyperfast soft recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current 1 3 1 Cathode • True 2 pin package 3 Anode • Designed and qualified according to JEDEC®-JESD 47 TO-220AC 2L • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 15 A VR 600 V VF at IF 1.25 V trr (typ.) 21 ns TJ max. 175 °C Package TO-220AC 2L Circuit configuration Single DESCRIPTION / APPLICATIONS Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. The extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Peak repetitive reverse voltage VRRM Average rectified forward current in DC IF(AV) TC = 149 °C 15 Non-repetitive peak surge current IFSM TJ = 25 °C 160 Operating junction and storage temperatures TJ, TStg A -65 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 15 A - 1.8 2.45 IF = 15 A, TJ = 150 °C - 1.25 1.6 VR = VR rated - 0.01 15 TJ = 150 °C, VR = VR rated - 20 200 IR = 100 μA UNITS V Forward voltage VF Reverse leakage current IR Junction capacitance CT VR = 600 V - 12 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8 - nH μA Revision: 13-Jan-2022 Document Number: 96630 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETH1506-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time SYMBOL trr TEST CONDITIONS IRRM Reverse recovery charge Qrr Reverse recovery time trr Peak recovery current IRRM TYP. MAX. IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 21 26 IF = 15 A, dIF/dt = 100 A/μs, VR = 30 V - 25 36 TJ = 25 °C - 29 - - 65 - - 3.9 - - 7.0 - TJ = 25 °C - 60 - TJ = 125 °C - 240 - - 42 - TJ = 125 °C Peak recovery current MIN. IF = 15 A, dIF/dt = 200 A/μs, VR = 390 V TJ = 25 °C TJ = 125 °C IF = 15 A, dIF/dt = 800 A/μs, VR = 390 V ns A nC ns - 21 - A - 480 - nC MIN. TYP. MAX. UNITS TJ, TStg -65 - 175 °C Thermal resistance, junction-to-case RthJC - 1.2 1.4 Thermal resistance, junction-to-ambient RthJA Typical socket mount - - 70 Typical thermal resistance, case-to-heatsink RthCS Mounting surface, flat, smooth and greased - 0.5 - - 2 - g - 0.07 - oz. 6 (5) - 12 (10) kgf · cm (lbf · in) Reverse recovery charge TJ = 125 °C UNITS Qrr THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range SYMBOL TEST CONDITIONS Weight Mounting torque Marking device Case style TO-220AC 2L °C/W ETH1506 Revision: 13-Jan-2022 Document Number: 96630 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETH1506-M3 Vishay Semiconductors 100 1000 IR - Reverse Current (µA) IF(AV) - Instantaneous Forward Current (A) www.vishay.com TJ = 175 °C 10 TJ = 150 °C TJ = 25 °C 175 °C 100 150 °C 10 125 °C 100 °C 1 75 °C 0.1 50 °C 0.01 25 °C 0.001 0.0001 1 0.5 1.0 1.5 2.0 2.5 0 3.0 100 200 300 400 500 600 VR - Reverse Voltage (V) VF - Forward Voltage Drop (W) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 100 10 1 0 100 200 300 400 500 600 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 0.1 D = 0.02 Single Pulse (Thermal Resistance) D = 0.01 0.01 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 13-Jan-2022 Document Number: 96630 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETH1506-M3 Vishay Semiconductors 100 180 90 170 80 70 160 trr (ns) Allowable Case Temperature (°C) www.vishay.com DC IF = 15 A, 125 °C 60 50 150 40 IF = 15 A, 25 °C 30 140 20 typical value 10 130 0 2 4 6 8 10 12 14 16 100 1000 IF(AV) - Average Forward Current (A) diF/dt (A/µs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery vs. dIF/dt 600 RMS Limit 25 500 20 400 Qrr (nC) Average Power Loss (W) 30 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 15 10 5 IF = 15 A, 125 °C 300 200 IF = 15 A, 25 °C 100 typical value 0 100 0 0 5 10 15 20 25 1000 IF(AV) - Average Forward Current (A) diF/dt (A/µs) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 13-Jan-2022 Document Number: 96630 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETH1506-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- E T H 15 06 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Circuit configuration: E = single 3 - T = 2L TO-220AC 4 - H = hyperfast recovery time 5 - Current code: 15 = 15 A 6 - Voltage code: 06 = 600 V 7 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N BASE QUANTITY PACKAGING DESCRIPTION VS-ETH1506-M3 50 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96156 Part marking information www.vishay.com/doc?95391 Revision: 13-Jan-2022 Document Number: 96630 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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