VS-ETH1506FP-M3
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Vishay Semiconductors
Hyperfast Rectifier, 15 A FRED Pt®
FEATURES
• Hyperfast soft recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
1
Cathode
1
2
Anode
• Low leakage current
• Fully isolated package (VINS = 2500 VRMS)
2
• True 2 pin package
2L TO-220 FullPAK
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
15 A
VR
600 V
DESCRIPTION / APPLICATIONS
VF at IF
1.25 V
trr (typ.)
21 ns
TJ max.
175 °C
Hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop, hyperfast recovery
time, and soft recovery.
Package
2L TO-220 FullPAK
Circuit configuration
Single
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
600
V
Peak repetitive reverse voltage
VRRM
Average rectified forward current in DC
IF(AV)
TC = 94 °C
15
Non-repetitive peak surge current
IFSM
TJ = 25 °C
160
Operating junction and storage temperatures
TJ, TStg
A
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
IF = 15 A
-
1.8
2.45
IR = 100 μA
IF = 15 A, TJ = 150 °C
-
1.25
1.6
VR = VR rated
-
0.01
15
TJ = 150 °C, VR = VR rated
-
20
200
UNITS
V
Reverse leakage current
IR
Junction capacitance
CT
VR = 600 V
-
12
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8
-
nH
μA
Revision: 25-Jul-2019
Document Number: 93522
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VS-ETH1506FP-M3
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
SYMBOL
trr
MIN.
TYP.
MAX.
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
TEST CONDITIONS
-
21
26
IF = 15 A, dIF/dt = 100 A/μs, VR = 30 V
-
25
36
TJ = 25 °C
-
29
-
-
65
-
-
3.9
-
-
7.0
-
TJ = 125 °C
Peak recovery current
Reverse recovery charge
IRRM
Qrr
Reverse recovery time
trr
Peak recovery current
IRRM
TJ = 25 °C
TJ = 125 °C
IF = 15 A,
dIF/dt = 200 A/μs,
VR = 390 V
TJ = 25 °C
-
60
-
TJ = 125 °C
-
240
-
UNITS
ns
A
nC
-
42
-
-
21
-
A
-
480
-
nC
MIN.
TYP.
MAX.
UNITS
TJ, TStg
-65
-
175
°C
Thermal resistance,
junction-to-case
RthJC
-
3.7
4.3
Thermal resistance,
junction-to-ambient
RthJA
Typical socket mount
-
-
70
Typical thermal resistance,
case-to-heatsink
RthCS
Mounting surface, flat, smooth and greased
-
0.5
-
-
2
-
g
-
0.07
-
oz.
6
(5)
-
12
(10)
kgf · cm
(lbf · in)
Reverse recovery charge
TJ = 125 °C
Qrr
IF = 15 A,
dIF/dt = 800 A/μs,
VR = 390 V
ns
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
SYMBOL
TEST CONDITIONS
Weight
Mounting torque
Marking device
Case style 2L TO-220 FullPAK
°C/W
ETH1506FP
Revision: 25-Jul-2019
Document Number: 93522
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VS-ETH1506FP-M3
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1000
100
IR - Reverse Current (μA)
IF(AV) - Instantaneous Forward Current (A)
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TJ = 175 °C
10
TJ = 150 °C
TJ = 25 °C
175 °C
100
150 °C
10
125 °C
100 °C
1
75 °C
0.1
50 °C
0.01
25 °C
0.001
0.0001
1
0.5
1.0
1.5
2.0
2.5
0
3.0
100
200
300
400
500
600
VR - Reverse Voltage (V)
VF - Forward Voltage Drop (W)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
1000
100
10
1
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
D = 0.5
1
D = 0.2
D = 0.1
D = 0.05
Single Pulse
(Thermal Resistance)
D = 0.02
D = 0.01
0.1
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 25-Jul-2019
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VS-ETH1506FP-M3
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180
100
160
90
80
140
70
120
DC
trr (ns)
Allowable Case Temperature (°C)
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100
80
IF = 15 A, 125 °C
60
50
40
60
30
40
20
IF = 15 A, 25 °C
typical value
10
20
0
2
4
6
8
10
12
14
16
100
1000
IF(AV) - Average Forward Current (A)
diF/dt (A/μs)
Fig. 7 - Typical Reverse Recovery vs. dIF/dt
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
600
RMS Limit
25
500
20
400
Qrr (nC)
Average Power Loss (W)
30
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
15
10
5
IF = 15 A, 125 °C
300
200
IF = 15 A, 25 °C
100
typical value
0
100
0
0
5
10
15
20
25
1000
IF(AV) - Average Forward Current (A)
diF/dt (A/μs)
Fig. 6 - Forward Power Loss Characteristics
Fig. 8 - Typical Stored Charge vs. dIF/dt
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 25-Jul-2019
Document Number: 93522
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VS-ETH1506FP-M3
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ORDERING INFORMATION TABLE
Device code
VS-
E
T
H
15
06
FP
-M3
1
2
3
4
5
6
7
8
1
-
2
-
Vishay Semiconductors product
Circuit configuration:
E = single
3
-
T = TO-220
4
-
H = hyperfast recovery time
5
-
Current code: 15 = 15 A
6
-
Voltage code: 06 = 600 V
7
-
FP = 2L TO-220 FullPAK
8
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-ETH1506FP-M3
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
50
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96157
Part marking information
www.vishay.com/doc?95392
Revision: 25-Jul-2019
Document Number: 93522
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
True 2 Pin TO-220
DIMENSIONS in millimeters and inches
0.002"
0.05 mm
A
A
E
ØP
F
B
Q
H1
D
Term. 4
0.150" REF.
45°
Ø 2.0 mm REF.
L1
b1
L
b
c
60°
1
2
J1
e
SYMBOL
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.32
4.57
0.170
0.180
b
0.71
0.91
0.028
0.036
b1
1.15
1.39
0.045
0.055
c
0.36
0.53
0.014
0.021
D
14.99
15.49
0.590
0.610
E
10.04
10.41
0.395
0.410
e
5.08 BSC
0.200 BSC
F
1.22
1.37
0.048
0.054
H1
5.97
6.47
0.235
0.255
J1
2.54
2.79
0.100
0.110
L
13.47
13.97
0.530
0.550
L1 (1)
3.31
3.81
0.130
0.150
ØP
3.79
3.88
0.149
0.153
Q
2.60
2.84
0.102
0.112
Notes
(1) Lead dimension and finish uncontrolled in L
1
• These dimensions are within allowable dimensions of JEDEC TO-220AB rev. J outline dated 3-24-87
• Controling dimension: Inch
Revision: 05-Dec-12
Document Number: 95259
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
2L TO-220 FullPAK
DIMENSIONS in millimeters
3.40
Hole Ø 3.10
10.6
10.0
3.7
3.2
2.80
2.44
7.31
6.50
16.0
15.8
Mold flash bleeding
3.3
3.1
Exposed Cu
13.56
12.90
2.54 TYP.
0.61
0.38
0.9
0.7
2.85
2.65
1.20
1.47
1.30
1.05
2.54 TYP.
Bottom view
R 0.7
(2 places)
R 0.5
4.8
4.6
5° ± 0.5°
5° ± 0.5°
Revision: 06-Jul-17
Document Number: 96157
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Revision: 09-Jul-2021
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Document Number: 91000