VS-ETH3007-M3
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Vishay Semiconductors
Hyperfast Rectifier, 30 A FRED Pt®
FEATURES
• Hyper fast and soft recovery
Base cathode
2
2
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
1
• True 2 pin package
3
Anode
1
Cathode
3
• Designed and qualified according to JEDEC®-JESD 47
2L TO-220AC
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
PRIMARY CHARACTERISTICS
IF(AV)
30 A
VR
650 V
VF at IF
1.4 V
trr typ.
33 ns
TJ max.
175 °C
Package
2L TO-220AC
Circuit configuration
Single
Ultra low VF, soft-switching hyper fast rectifiers optimized
for discontinuous (critical) mode (DCM) power factor
correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
650
V
Repetitive peak reverse voltage
VRRM
Average rectified forward current
IF(AV)
TC = 120 °C
30
Non-repetitive peak surge current
IFSM
TJ = 25 °C
210
Operating junction and storage temperatures
TJ, TStg
A
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
TEST CONDITIONS
IR = 100 μA
IF = 30 A
MIN.
TYP.
MAX.
650
-
-
-
1.8
2.1
IF = 30 A, TJ = 150 °C
-
1.4
1.6
VR = VR rated
-
0.02
30
TJ = 150 °C, VR = VR rated
-
50
300
UNITS
V
μA
Reverse leakage current
IR
Junction capacitance
CT
VR = 650 V
-
22
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8
-
nH
Revision: 06-Apr-18
Document Number: 96063
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETH3007-M3
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
-
37
-
-
33
-
-
88
-
-
18
-
-
30
-
TJ = 25 °C
-
450
-
TJ = 125 °C
-
1350
-
TJ = 25 °C
Reverse recovery time
trr
IF = 1 A
dIF/dt = 100 A/μs
VR = 30 V
ns
TJ = 25 °C
TJ = 125 °C
Peak recovery current
TJ = 25 °C
IRRM
Reverse recovery charge
TJ = 125 °C
Qrr
UNITS
IF = 30 A
dIF/dt = 1000 A/μs
VR = 400 V
A
nC
THERMAL - MECHANICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNITS
TJ, TStg
-55
-
175
°C
Thermal resistance,
junction to case
RthJC
-
1.0
1.3
Thermal resistance,
junction to ambient
RthJA
Typical socket mount
-
-
70
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth,
and greased
-
-
0.5
-
2.0
-
g
-
0.07
-
oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Maximum junction and
storage temperature range
TEST CONDITIONS
Weight
Mounting torque
Case style 2L TO-220AC
ETH3007
1000
100
175 °C
100
10
150 °C
10
TJ = 175 °C
IRM (μA)
IF - Instantaneous Forward Current (A)
Marking device
°C/W
1
1
0.1
25 °C
0.01
TJ = 150 °C
TJ = 25 °C
0.1
0.001
0
0.5
1.0
1.5
2.0
2.5
0
100
200
300
400
500
600
700
VF - Forward Voltage Drop (V)
VR (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 06-Apr-18
Document Number: 96063
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETH3007-M3
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Vishay Semiconductors
CT - Junction Capacitance (pF)
1000
100
10
0
100
200
300
400
500
600
700
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Impedance
Junction to Case (°C/W)
10
1
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
80
170
70
160
Average Power Loss (W)
Allowable Case Temperature (°C)
180
150
140
130
120
DC
110
100
90
Square wave (D = 0.50)
rated VR applied
80
70
RMS limit
60
50
D = 0.01
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
40
30
20
10
0
0
10
20
30
40
50
0
10
20
30
40
50
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Revision: 06-Apr-18
Document Number: 96063
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETH3007-M3
www.vishay.com
Vishay Semiconductors
300
1600
1400
250
1200
200
125 °C
Qrr (nC)
trr (ns)
1000
125 °C
150
100
25 °C
800
600
25 °C
400
50
200
0
0
100
1000
100
1000
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 06-Apr-18
Document Number: 96063
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETH3007-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
E
T
H
30
07
-M3
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
E = single diode
3
-
Package:
T = TO-220AC
4
-
H = hyper fast recovery
5
-
Current rating (30 = 30 A)
6
-
Voltage rating (07 = 650 V)
7
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-ETH3007-M3
50
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96156
Part marking information
www.vishay.com/doc?95391
SPICE model
www.vishay.com/doc?96531
Revision: 06-Apr-18
Document Number: 96063
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 09-Jul-2021
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Document Number: 91000
