VS-ETH3007THN3
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Vishay Semiconductors
Hyperfast Rectifier, 30 A FRED Pt®
FEATURES
2
Base cathode
•
•
•
•
•
•
Hyper fast and soft recovery
Low forward voltage drop
175 °C operating junction temperature
Low leakage current
True 2 pin package
Available
Designed and qualified according to
JEDEC®-JESD 47
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
2
1
3
TO-220AC 2L
3
Anode
1
Cathode
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
DESCRIPTION / APPLICATIONS
Ultra low VF, soft-switching hyper fast rectifiers optimized
for discontinuous (critical) mode (DCM) power factor
correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
PRIMARY CHARACTERISTICS
IF(AV)
30 A
VR
650 V
VF at IF
1.4 V
trr typ.
33 ns
TJ max.
175 °C
Package
TO-220AC 2L
Circuit configuration
Single
MECHANICAL DATA
Case: TO-220AC 2L
Molding compound meets UL 94 V-0 flammability rating
Terminals:
J-STD-002
matte
tin
plated
leads,
solderable
per
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
650
V
Repetitive peak reverse voltage
VRRM
Average rectified forward current
IF(AV)
TC = 120 °C
30
Non-repetitive peak surge current
IFSM
TJ = 25 °C
210
Operating junction and storage temperatures
TJ, TStg
A
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage, blocking voltage
Forward voltage
SYMBOL
VBR, VR
VF
TEST CONDITIONS
IR = 100 μA
IF = 30 A
MIN.
TYP.
MAX.
650
-
-
-
1.8
2.1
1.6
IF = 30 A, TJ = 150 °C
-
1.4
VR = VR rated
-
0.02
30
TJ = 150 °C, VR = VR rated
-
50
300
UNITS
V
Reverse leakage current
IR
Junction capacitance
CT
VR = 650 V
-
22
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8
-
nH
μA
Revision: 28-Jan-2021
Document Number: 96064
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1 A
dIF/dt = 100 A/μs
VR = 30 V
TJ = 25 °C
Reverse recovery time
trr
TJ = 125 °C
Peak recovery current
IRRM
Reverse recovery charge
Qrr
IF = 30 A
dIF/dt = 1000 A/μs
VR = 400 V
TJ = 125 °C
TYP.
MAX.
-
37
-
-
33
-
-
88
-
-
18
-
-
30
-
UNITS
ns
TJ = 25 °C
TJ = 25 °C
MIN.
A
TJ = 25 °C
-
450
-
TJ = 125 °C
-
1350
-
MIN.
TYP.
MAX.
UNITS
-55
-
175
°C
1.3
nC
THERMAL - MECHANICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Thermal resistance, junction to case
RthJC
-
1.0
Thermal resistance, junction to ambient
RthJA
Typical socket mount
-
-
70
Thermal resistance, case to heatsink
RthCS
Mounting surface, flat, smooth, and greased
-
-
0.5
-
2.0
-
g
-
0.07
-
oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Weight
Mounting torque
Case style: 2L TO-220AC
ETH3007TH
1000
100
175 °C
100
10
150 °C
10
TJ = 175 °C
IRM (µA)
IF - Instantaneous Forward Current (A)
Marking device
°C/W
1
1
0.1
25 °C
0.01
TJ = 150 °C
TJ = 25 °C
0.1
0.001
0
0.5
1.0
1.5
2.0
2.5
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
0
100
200
300
400
500
600
700
VR (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 28-Jan-2021
Document Number: 96064
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETH3007THN3
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CT - Junction Capacitance (pF)
1000
100
10
0
100
200
300
400
500
600
700
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Impedance
Junction to Case (°C/W)
10
1
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
80
170
RMS limit
70
160
Average Power Loss (W)
Allowable Case Temperature (°C)
180
150
140
130
120
110
DC
100
Square wave (D = 0.50)
rated VR applied
90
80
70
60
50
40
D = 0.01
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
30
20
10
0
0
10
20
30
40
50
0
10
20
30
40
50
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Revision: 28-Jan-2021
Document Number: 96064
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETH3007THN3
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Vishay Semiconductors
130
1400
120
110
1200
125 °C
100
125 °C
1000
Qrr (nC)
trr (ns)
90
80
70
25 °C
60
50
600
400
40
25 °C
200
30
20
800
0
100
1000
100
1000
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
(1)
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 28-Jan-2021
Document Number: 96064
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
E
T
H
30
07
T
H
N3
1
2
3
4
5
6
7
8
9
1
-
Vishay Semiconductors product
2
-
E = single diode
3
-
Package:
4
-
H = hyper fast recovery
5
-
Current rating (30 = 30 A)
6
-
Voltage rating (07 = 650 V)
7
-
True 2 pin TO-220
8
-
H = AEC-Q101 qualified
9
-
Environmental digit:
N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
T = TO-220AC
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-ETH3007THN3
50
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96069
Part marking information
www.vishay.com/doc?95391
SPICE model
www.vishay.com/doc?96531
Revision: 28-Jan-2021
Document Number: 96064
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
2L TO-220AC
DIMENSIONS in millimeters and inches
(6)
B
Seating
plane
A
E
A
ØP
0.014 M B A M
E2 (7)
A
Thermal pad
E
A1
Q
(6)
H1
(7)
(6) D
H1
D2 (6)
Detail B
D1
1
2
(2) L1
C
E1 (6)
1
2
L
D
C
Base metal
D
C
L1 (2)
A
b1, b3
(4)
Section C - C and D - D
View A - A
A2
Plating
c1 (4)
c
c
2 x b 2 x b2
Detail B
e1
(b, b2)
0.015 M B A M
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
INCHES
MAX.
MIN.
MAX.
NOTES
A
4.25
4.65
0.167
0.183
E1
6.86
8.89
0.270
0.350
6
A1
1.14
1.40
0.045
0.055
E2
-
0.76
-
0.030
7
A2
2.56
2.92
0.101
0.115
e1
4.88
5.28
0.192
0.208
b
0.69
1.01
0.027
0.040
H1
5.84
6.86
0.230
0.270
b1
0.38
0.97
0.015
0.038
b2
1.20
1.73
0.047
0.068
b3
1.14
1.73
0.045
0.068
4
4
c
0.36
0.61
0.014
0.024
c1
0.36
0.56
0.014
0.022
4
3
D
14.85
15.25
0.585
0.600
D1
8.38
9.02
0.330
0.355
D2
11.68
12.88
0.460
0.507
6
E
10.11
10.51
0.398
0.414
3, 6
L
13.52
14.02
0.532
0.552
L1
3.32
3.82
0.131
0.150
ØP
3.54
3.73
0.139
0.147
Q
2.60
3.00
0.102
0.118
6, 7
2
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC® TO-220, except D2, where JEDEC® minimum is 0.480"
Revision: 09-Sep-2019
Document Number: 96069
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
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Revision: 09-Jul-2021
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Document Number: 91000
