VS-ETH3106FP-N3

VS-ETH3106FP-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt® FEATURES • Hyperfast soft recovery time • Low forward voltage drop • 175 °C operating junction temperature 1 Cathode 1 2 Anode • Low leakage current • Fully isolated package (VINS = 2500 VRMS) • True 2 pin package 2 TO-220 FullPAK 2L • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES 3D 3D DESCRIPTION / APPLICATIONS 3D Models Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. PRIMARY CHARACTERISTICS IF(AV) 30 A VR 600 V VF at IF 1.40 V These devices are intended for use in PFC boost stage in the AC/DC section of switch mode power supplies and inverters (air conditioning, high-frequency welding, UPS, and motor drives) trr (typ.) 22 ns TJ max. 175 °C Package TO-220 FullPAK 2L Circuit configuration Single The extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. MECHANICAL DATA Case: TO-220 FullPACK 2L Molding compound meets UL 94 V-0 flammability rating Terminals: J-STD-002 matte tin plated leads, solderable per ABSOLUTE MAXIMUM RATINGS PARAMETER VALUES UNITS Peak repetitive reverse voltage VRRM 600 V Average rectified forward current in DC IF(AV) 30 Non-repetitive peak surge current IFSM Operating junction and storage temperatures SYMBOL TEST CONDITIONS TJ = 25 °C A 280 TJ, TStg -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF Reverse leakage current IR Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 30 A - 1.70 2.15 1.65 IR = 100 μA IF = 30 A, TJ = 150 °C - 1.40 VR = VR rated - 0.02 10 TJ = 150 °C, VR = VR rated - 36 300 VR = 600 V - 19 - UNITS V μA pF Revision: 28-Feb-2023 Document Number: 96786 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETH3106FP-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V Reverse recovery time Peak recovery current trr IRRM MIN. TYP. MAX. - 22 - TJ = 25 °C - 90 - TJ = 125 °C - 110 - IF = 30 A, dIF/dt = 200 A/μs, VR = 400 V TJ = 25 °C TJ = 125 °C - 4.1 - - 9.4 - UNITS ns A TJ = 25 °C - 230 - TJ = 125 °C - 730 - MIN. TYP. MAX. UNITS TJ, TStg -55 - 175 °C Thermal resistance, junction-to-case RthJC - 2.40 3.10 Thermal resistance, junction-to-ambient RthJA Typical socket mount - 45 - Typical thermal resistance, case-to-heatsink RthCS Mounting surface, flat, smooth, and greased - 0.5 - - 2 - - 0.07 - oz. - 12 (10) kgf · cm (lbf · in) Reverse recovery charge Qrr nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range SYMBOL TEST CONDITIONS Weight 6 (5) Mounting torque Marking device Case style TO-220 FullPAK 2L °C/W g ETH3106FP Revision: 28-Feb-2023 Document Number: 96786 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETH3106FP-N3 Vishay Semiconductors 1000 1000 CT - Junction Capacitance (pF) IF - Instantaneous Forward Current (A) www.vishay.com 100 TJ = 175 °C 10 TJ = 125 °C TJ = 25 °C 1 0.1 0 0.5 1.0 1.5 2.0 2.5 100 10 3.0 0 100 Fig. 1 - Forward Voltage Drop Characteristics 400 500 600 Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1000 80 TJ = 175 °C 100 TJ = 150 °C 10 TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 0 100 200 300 400 500 70 Average Power Loss (W) IR - Reverse Current (µA) 300 VR - Reverse Voltage (V) VF - Forward Voltage Drop (V) 0.001 200 RMS limit 60 50 D = 0.01 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 40 30 20 10 0 600 VR - Reverse Voltage (V) 0 5 10 15 20 25 30 35 40 45 IF(AV) - Average Forward Current (A) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Fig. 4 - Forward Power Loss Characteristics ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 0.50 0.20 0.10 0.05 0.02 0.01 0.1 DC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 5 - Transient Thermal Impedance, Junction to Case Revision: 28-Feb-2023 Document Number: 96786 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETH3106FP-N3 170 160 150 140 130 120 110 100 90 80 70 60 50 40 Vishay Semiconductors 1400 VR = 400 V VR = 400 V 1200 IF = 30 A TJ = 125 °C 1000 Qrr (nC) trr (ns) www.vishay.com IF = 30 A TJ = 125 °C 800 600 400 IF = 30 A TJ = 25 °C 0 200 IF = 30 A TJ = 25 °C 200 400 600 800 0 1000 0 200 400 600 800 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt Fig. 7 - Typical Reverse Recovery Charge vs. dIF/dt 35 VR = 400 V 30 Irr (ns) 25 IF = 30 A TJ = 125 °C 20 15 10 IF = 30 A TJ = 25 °C 5 0 0 200 400 600 800 1000 dIF/dt (A/µs) Fig. 8 - Typical Reverse Recovery Current vs. dIF/dt Revision: 28-Feb-2023 Document Number: 96786 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETH3106FP-N3 www.vishay.com Vishay Semiconductors (3) trr ta IF tb t0 0 t10 % 0.1 IRRM (2) Qrr (4) IRRM di(rec)M/dt (5) (1) diF/dt Fig. 9 - Reverse Recovery Waveform and Definitions Notes (1) di /dt - rate of change of current through zero crossing F (2) I RRM - peak reverse recovery current (3) t - reverse recovery time measured from t , crossing point of negative going I , to point t rr 0 F 10%, 0.1 IRRM (4) Q - area under curve defined by t and t rr 0 10 % t 10 % Q rr =  I ( t ) dt t0 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr ORDERING INFORMATION TABLE Device code VS- E T H 31 06 FP -N3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Circuit configuration: E = single 3 - T = TO-220 4 - H = hyperfast recovery time 5 - Current code: 31 = 30 A 6 - Voltage code: 06 = 600 V 7 - FP = TO-220 FullPAK 2L 8 - Environmental digit: -N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96157 Part marking information www.vishay.com/doc?95392 Revision: 28-Feb-2023 Document Number: 96786 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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