VS-ETL1506-M3
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Vishay Semiconductors
Ultrafast Rectifier, 15 A FRED Pt®
FEATURES
Base
cathode
2
2
• State of the art low forward voltage drop
• Ultrafast soft recovery time
• 175 °C operating junction temperature
• Low leakage current
1
3
1
Cathode
• True 2 pin package
3
Anode
• Designed and qualified according to JEDEC®-JESD 47
TO-220AC 2L
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
15 A
VR
600 V
VF at IF
0.85 V
trr (typ.)
60 ns
TJ max.
175 °C
Package
TO-220AC 2L
Circuit configuration
Single
DESCRIPTION
State of the art, ultralow VF, soft-switching ultrafast
rectifiers optimized for Discontinuous (Critical) Mode (DCM)
Power Factor Correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
APPLICATIONS
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units and DVD AC/DC power supplies.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
600
V
Peak repetitive reverse voltage
VRRM
Average rectified forward current in DC
IF(AV)
TC = 157 °C
15
Non-repetitive peak surge current
IFSM
TJ = 25 °C
200
Operating junction and storage temperatures
TJ, TStg
A
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
IF = 15 A
-
0.99
1.07
IR = 100 μA
IF = 15 A, TJ = 150 °C
-
0.85
0.91
VR = VR rated
-
0.01
15
TJ = 150 °C, VR = VR rated
-
6
100
UNITS
V
Reverse leakage current
IR
Junction capacitance
CT
VR = 600 V
-
12
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8
-
nH
μA
Revision: 13-Jan-2022
Document Number: 96633
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
SYMBOL
trr
MIN.
TYP.
MAX.
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
TEST CONDITIONS
-
60
110
IF = 15 A, dIF/dt = 100 A/μs, VR = 30 V
-
185
270
TJ = 25 °C
-
210
-
TJ = 125 °C
UNITS
ns
-
290
-
-
20
-
-
26
-
TJ = 25 °C
-
2.2
-
TJ = 125 °C
-
4.0
-
MIN.
TYP.
MAX.
UNITS
TJ, TStg
-65
-
175
°C
Thermal resistance,
junction-to-case
RthJC
-
1.2
1.4
Thermal resistance,
junction-to-ambient
RthJA
Typical socket mount
-
-
70
Typical thermal resistance,
case-to-heatsink
RthCS
Mounting surface, flat, smooth, and greased
-
0.5
-
-
2
-
g
-
0.07
-
oz.
6
(5)
-
12
(10)
kgf · cm
(lbf · in)
Peak recovery current
Reverse recovery charge
IRRM
Qrr
TJ = 25 °C
TJ = 125 °C
IF = 15 A,
dIF/dt = 200 A/μs,
VR = 390 V
A
μC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
SYMBOL
TEST CONDITIONS
Weight
Mounting torque
Marking device
Case style TO-220AC 2L
°C/W
ETL1506
Revision: 13-Jan-2022
Document Number: 96633
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Semiconductors
100
100
175°C
Reverse Current - IR (µA)
Tj = 175°C
150°C
1
125°C
100°C
0.1
75°C
50°C
0.01
25°C
0.001
0.0001
100
200
300
400
500
600
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10
1000
Tj = 150°C
Junction Capacitance - CT (pF)
Instantaneous Forward Current - IF (A)
10
Tj = 25°C
100
10
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
0
Forward Voltage Drop - VF (V)
100
200
300
400
500
600
Reverse Voltage - VR (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Thermal Impedance ZthJC (°C/W)
10
D = 0.5
1
D = 0.2
D = 0.1
D = 0.05
0.1
D = 0.02
Single Pulse
(Thermal Resistance)
D = 0.01
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 13-Jan-2022
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400
350
170
DC
300
160
If = 15 A, 125°C
trr ( ns )
Allowable Case Temperature (°C)
180
150
250
200
If = 15 A, 25°C
140
0
2
4
6
8 10 12 14 16
Average Forward Current - IF(AV)(A)
150
typical value
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
100
100
20
RMS Limit
Fig. 7 - Typical Reverse Recovery vs. dIF/dt
15
6
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
10
5
5
If = 15 A, 125°C
4
0
0
4
8
12
16
20
24
Qrr ( µC )
Average Power Loss ( Watts )
1000
di F /dt (A/µs )
3
If = 15 A, 25°C
Average Forward Current - IF(AV) (A)
Fig. 6 - Forward Power Loss Characteristics
2
1
typical value
0
100
1000
di F /dt (A/µs )
Fig. 8 - Typical Stored Charge vs. dIF/dt
Revision: 13-Jan-2022
Document Number: 96633
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(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(4) Qrr - area under curve defined by trr
and IRRM
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
Qrr =
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
E
T
L
15
06
-M3
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Circuit configuration:
E = single
3
-
T = 2L TO-220AC
4
-
L = hyperfast recovery time
5
-
Current code: 15 = 15 A
6
-
Voltage code: 06 = 600 V
7
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-ETL1506-M3
BASE QUANTITY
PACKAGING DESCRIPTION
50
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96156
Part marking information
www.vishay.com/doc?95391
Revision: 13-Jan-2022
Document Number: 96633
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Outline Dimensions
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Vishay Semiconductors
2L TO-220AC
DIMENSIONS in millimeters and inches
A
0.014 M B A M
(6)
E
A
ØP
Q
B
A
(6)
(E)
A1
Thermal pad
1
(H1)
H1
C
D2
(6) D
2
D
D
L1 (2)
C
(6)
c
2xb
D1
2 x b2
Detail B
Detail B
A2
L
E1 (6)
C
(b, b2)
Base metal
A
c1 (4)
c
2x e
Plating
View A - A
e1
b1, b3
(4)
Section C - C and D - D
0.015 M B A M
Lead tip
Conforms to JEDEC® outline TO-220AC
SYMBOL
A
A1
A2
b
b1
b2
b3
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.25
4.65
1.14
1.40
2.50
2.92
0.69
1.01
0.38
0.97
1.20
1.73
1.14
1.73
0.36
0.61
0.36
0.56
14.85
15.35
8.38
9.02
INCHES
MIN.
MAX.
0.167
0.183
0.045
0.055
0.098
0.115
0.027
0.040
0.015
0.038
0.047
0.068
0.045
0.068
0.014
0.024
0.014
0.022
0.585
0.604
0.330
0.355
NOTES
4
4
4
3
SYMBOL
D2
E
E1
e
e1
H1
L
L1
ØP
Q
MILLIMETERS
MIN.
MAX.
11.68
13.30
10.11
10.51
6.86
8.89
2.41
2.67
4.88
5.28
6.09
6.48
13.52
14.02
3.32
3.82
3.54
3.91
2.60
3.00
INCHES
MIN.
MAX.
0.460
0.524
0.398
0.414
0.270
0.350
0.095
0.105
0.192
0.208
0.240
0.255
0.532
0.552
0.131
0.150
0.139
0.154
0.102
0.118
NOTES
6, 7
3, 6
6
6
2
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3, and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2, and E1
(7) Outline conforms to JEDEC® TO-220, except D2
Revision: 13-Jun-2019
Document Number: 96156
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Disclaimer
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