VS-ETU1506FP-M3

VS-ETU1506FP-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 15 A FRED Pt® FEATURES • Low forward voltage drop • Ultrafast soft recovery time • 175 °C operating junction temperature 1 Cathode 1 2 Anode • Low leakage current • Fully isolated package (VINS = 2500 VRMS) 2 • True 2 pin package 2L TO-220 FullPAK • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 15 A VR 600 V DESCRIPTION VF at IF 1.1 V trr (typ.) 24 ns TJ max. 175 °C State of the art, ultralow VF, soft-switching ultrafast rectifiers optimized for Discontinuous (Critical) Mode (DCM) Power Factor Correction (PFC). Package 2L TO-220 FullPAK Circuit configuration Single The minimized conduction loss, optimized stored charge and low recovery current minimized the switching losses and reduce over dissipation in the switching element and snubbers. The device is also intended for use as a freewheeling diode in power supplies and other power switching applications. APPLICATIONS AC/DC SMPS 70 W to 400 W e.g. laptop and printer AC adaptors, desktop PC, TV and monitor, games units and DVD AC/DC power supplies. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Peak repetitive reverse voltage VRRM Average rectified forward current in DC IF(AV) TC = 103 °C 15 Non-repetitive peak surge current IFSM TJ = 25 °C 160 Operating junction and storage temperatures TJ, TStg A -65 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 15 A - 1.35 1.9 IR = 100 μA IF = 15 A, TJ = 150 °C - 1.1 1.3 VR = VR rated - 0.01 15 TJ = 150 °C, VR = VR rated - 20 200 UNITS V Reverse leakage current IR Junction capacitance CT VR = 600 V - 12 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8 - nH μA Revision: 25-Jul-2019 Document Number: 93534 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETU1506FP-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time SYMBOL trr MIN. TYP. MAX. IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V TEST CONDITIONS - 24 28 IF = 15 A, dIF/dt = 100 A/μs, VR = 30 V - 36 47 TJ = 25 °C - 40 - TJ = 125 °C Peak recovery current Reverse recovery charge IRRM Qrr Reverse recovery time trr Peak recovery current IRRM - 87 - - 5 - - 9 - TJ = 25 °C - 107 - TJ = 125 °C - 430 - TJ = 25 °C TJ = 125 °C IF = 15 A, dIF/dt = 200 A/μs, VR = 390 V UNITS ns A nC - 53 - - 25 - A - 730 - nC MIN. TYP. MAX. UNITS TJ, TStg -65 - 175 °C Thermal resistance, junction-to-case RthJC - 3.7 4.3 Thermal resistance, junction-to-ambient RthJA Typical socket mount - - 70 Typical thermal resistance, case-to-heatsink RthCS Mounting surface, flat, smooth and greased - 0.5 - - 2 - g - 0.07 - oz. 6 (5) - 12 (10) kgf · cm (lbf · in) Reverse recovery charge TJ = 125 °C Qrr IF = 15 A, dIF/dt = 800 A/μs, VR = 390 V ns THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range SYMBOL TEST CONDITIONS Weight Mounting torque Marking device Case style 2L TO-220 FullPAK °C/W ETU1506FP Revision: 25-Jul-2019 Document Number: 93534 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETU1506FP-M3 Vishay Semiconductors 100 1000 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 175 °C 10 TJ = 150 °C TJ = 25 °C 175 °C 100 150 °C 125 °C 10 100 °C 1 75 °C 0.1 50 °C 25 °C 0.01 0.001 0.0001 1 0.5 1.0 1.5 2.0 0 2.5 100 200 300 400 500 600 VR - Reverse Voltage (V) VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 100 10 1 0 100 200 300 400 500 600 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 D = 0.5 1 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance) 0.1 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 25-Jul-2019 Document Number: 93534 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETU1506FP-M3 www.vishay.com Vishay Semiconductors 120 110 160 100 140 90 DC 100 80 70 60 50 IF = 15 A, 25 °C 40 60 30 40 20 20 10 100 0 2 4 6 8 10 12 14 16 typical value 1000 IF(AV) - Average Forward Current (A) dIFdt (A/μs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery vs. dIF/dt 30 900 800 RMS Limit 25 700 IF = 15 A, 125 °C 600 20 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 15 10 5 Qrr (nC) Average Power Loss (W) IF = 15 A, 125 °C 80 120 trr (ns) Allowable Case Temperature (°C) 180 500 400 300 IF = 15 A, 25 °C 200 100 typical value 0 0 0 5 10 15 20 100 25 1000 IF(AV) - Average Forward Current (A) dIFdt (A/μs) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 25-Jul-2019 Document Number: 93534 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETU1506FP-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- E T U 15 06 FP -M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Circuit configuration: E = single 3 - T = TO-220 4 - U = hyperfast recovery time 5 - Current code: 15 = 15 A 6 - Voltage code: 06 = 600 V 7 - FP = 2L TO-220 FullPAK 8 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-ETU1506FP-M3 QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96157 Part marking information www.vishay.com/doc?95392 SPICE model www.vishay.com/doc?96131 Revision: 25-Jul-2019 Document Number: 93534 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors True 2 Pin TO-220 FULL-PAK DIMENSIONS in millimeters and inches A ØQ F E Q1 H1 D Q2 θ L1 b1 L b C e J1 SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 4.53 4.93 0.178 0.194 b 0.71 0.91 0.028 0.036 b1 1.15 1.39 0.045 0.055 C 0.36 0.53 0.014 0.021 D 15.67 16.07 0.617 0.633 E 9.96 10.36 0.392 e 5.08 typical 0.408 0.200 typical F 2.34 2.74 0.092 0.107 H1 6.50 6.90 0.256 0.272 J1 2.56 2.96 0.101 0.117 L 12.78 13.18 0.503 0.519 L1 2.23 2.63 0.088 0.104 ØQ 2.98 3.38 0.117 0.133 Q1 3.10 3.50 0.122 0.138 Q2 14.80 15.20 0.583 0.598  0° 5° 0° 5° Revision: 05-Dec-12 Document Number: 95260 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2019 1 Document Number: 91000