VS-ETU3006FP-M3
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Vishay Semiconductors
Ultrafast Rectifier, 30 A FRED Pt®
FEATURES
• Low forward voltage drop
• Ultrafast soft recovery time
• 175 °C operating junction temperature
1
Cathode
1
2
Anode
• Low leakage current
• Fully isolated package (VINS = 2500 VRMS)
2
• True 2 pin package
2L TO-220 FullPAK
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
30 A
VR
600 V
DESCRIPTION
VF at IF
1.15 V
trr (typ.)
30 ns
TJ max.
175 °C
Ultralow VF, soft-switching ultrafast rectifiers optimized for
Discontinuous (Critical) Mode (DCM) Power Factor
Correction (PFC).
Package
2L TO-220 FullPAK
Circuit configuration
Single
The minimized conduction loss, optimized stored charge
and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
APPLICATIONS
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units and DVD AC/DC power supplies.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
600
V
Peak repetitive reverse voltage
VRRM
Average rectified forward current in DC
IF(AV)
TC = 72 °C
30
Non-repetitive peak surge current
IFSM
TJ = 25 °C
200
Operating junction and storage temperatures
TJ, TStg
A
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
IF = 30 A
-
1.4
2.0
1.35
IR = 100 μA
IF = 30 A, TJ = 150 °C
-
1.15
VR = VR rated
-
0.02
30
TJ = 150 °C, VR = VR rated
-
30
250
UNITS
V
Reverse leakage current
IR
Junction capacitance
CT
VR = 600 V
-
20
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8
-
nH
μA
Revision: 25-Jul-2019
Document Number: 93538
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETU3006FP-M3
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
Reverse recovery time
Peak recovery current
trr
IRRM
MIN.
TYP.
MAX.
-
30
45
TJ = 25 °C
-
45
-
TJ = 125 °C
-
100
-
-
5.6
-
-
10
-
TJ = 25 °C
TJ = 125 °C
ns
A
-
127
-
-
580
-
MIN.
TYP.
MAX.
UNITS
TJ, TStg
-65
-
175
°C
Thermal resistance,
junction-to-case
RthJC
-
3.2
3.8
Thermal resistance,
junction-to-ambient
RthJA
Typical socket mount
-
-
70
Typical thermal resistance,
case-to-heatsink
RthCS
Mounting surface, flat, smooth and greased
-
0.5
-
-
2
-
g
-
0.07
-
oz.
6
(5)
-
12
(10)
kgf · cm
(lbf · in)
Reverse recovery charge
Qrr
TJ = 25 °C
IF = 30 A,
dIF/dt = 200 A/μs,
VR = 200 V
UNITS
TJ = 125 °C
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
SYMBOL
TEST CONDITIONS
Weight
Mounting torque
Marking device
Case style 2L TO-220 FullPAK
°C/W
ETU3006FP
Revision: 25-Jul-2019
Document Number: 93538
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETU3006FP-M3
www.vishay.com
Vishay Semiconductors
1000
1000
175°C
Reverse Current - IR (µA)
150°C
10
125°C
100°C
1
75°C
0.1
50°C
25°C
0.01
100
0.001
0
Tj = 175°C
100
200
300
400
500
600
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
10
Tj = 150°C
Junction Capacitance - CT (pF)
Instantaneous Forward Current - IF (A)
100
Tj = 25°C
100
10
1
0.0
0.5
1.0
1.5
2.0
2.5
1
0
Forward Voltage Drop - VF (V)
100
200
300
400
500
600
Reverse Voltage - VR (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Thermal Impedance ZthJC (°C/W)
10
D = 0.5
D = 0.2
1
D = 0.1
D = 0.05
Single Pulse
(Thermal Resistance)
D = 0.02
D = 0.01
0.1
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 25-Jul-2019
Document Number: 93538
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETU3006FP-M3
www.vishay.com
Vishay Semiconductors
130
120
160
110
140
100
120
If = 30 A, 125°C
90
100
DC
trr ( ns )
Allowable Case Temperature (°C)
180
80
60
80
70
60
40
50
20
0
5
10
15
20
25
30
If = 30 A, 25°C
40
35
Average Forward Current - IF(AV)(A)
30
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
20
typical value
10
100
60
Fig. 7 - Typical Reverse Recovery vs. dIF/dt
RMS Limit
50
1800
40
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
30
20
10
0
0
5
10 15 20 25 30 35 40 45
1600
1400
1200
Qrr ( nC )
Average Power Loss ( Watts )
1000
di F /dt (A/µs )
If = 30 A, 125°C
1000
800
Average Forward Current - IF(AV) (A)
Fig. 6 - Forward Power Loss Characteristics
600
If = 30 A, 25°C
400
200
typical value
0
100
1000
di F /dt (A/µs )
Fig. 8 - Typical Stored Charge vs. dIF/dt
Revision: 25-Jul-2019
Document Number: 93538
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ETU3006FP-M3
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Vishay Semiconductors
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(4) Qrr - area under curve defined by trr
and IRRM
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
Qrr =
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
E
T
U
30
06
FP
-M3
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Circuit configuration:
E = single
3
-
T = TO-220
4
-
U = hyperfast recovery time
5
-
Current code: 30 = 30 A
6
-
Voltage code: 06 = 600 V
7
-
FP = 2L TO-220 FullPAK
8
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-ETU3006FP-M3
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
50
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96157
Part marking information
www.vishay.com/doc?95392
SPICE model
www.vishay.com/doc?96437
Revision: 25-Jul-2019
Document Number: 93538
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
2L TO-220 FullPAK
DIMENSIONS in millimeters
3.40
Hole Ø 3.10
10.6
10.0
3.7
3.2
2.80
2.44
7.31
6.50
16.0
15.8
Mold flash bleeding
3.3
3.1
Exposed Cu
13.56
12.90
2.54 TYP.
0.61
0.38
0.9
0.7
2.85
2.65
1.20
1.47
1.30
1.05
2.54 TYP.
Bottom view
R 0.7
(2 places)
R 0.5
4.8
4.6
5° ± 0.5°
5° ± 0.5°
Revision: 06-Jul-17
Document Number: 96157
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Revision: 01-Jan-2022
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Document Number: 91000
