VS-ETX0806FP-M3

VS-ETX0806FP-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® FEATURES • Hyperfast recovery time, extremely low Qrr • Low forward voltage drop • 175 °C operating junction temperature 1 Cathode 1 2 Anode • Low leakage current • Fully isolated package (VINS = 2500 VRMS) 2 • True 2 pin package 2L TO-220 FullPAK • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 8A VR 600 V DESCRIPTION / APPLICATIONS VF at IF 1.5 V trr (typ.) 14 ns TJ max. 175 °C State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. Package 2L TO-220 FullPAK Circuit configuration Single The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. The extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Peak repetitive reverse voltage VRRM Average rectified forward current in DC IF(AV) TC = 105 °C 8 Non-repetitive peak surge current IFSM TJ = 25 °C 80 Operating junction and storage temperatures TJ, TStg A -65 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS IR = 100 μA IF = 8 A MIN. TYP. MAX. 600 - - - 2.5 3.4 2.0 IF = 8 A, TJ = 150 °C - 1.5 VR = VR rated - 0.02 30 TJ = 150 °C, VR = VR rated - 21 150 UNITS V Reverse leakage current IR Junction capacitance CT VR = 600 V - 6 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8 - nH μA Revision: 25-Jul-2019 Document Number: 93546 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETX0806FP-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time SYMBOL trr MIN. TYP. MAX. IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V TEST CONDITIONS - 14 18 IF = 8 A, dIF/dt = 100 A/μs, VR = 30 V - 15 24 TJ = 25 °C - 17 - - 33 - - 2.6 - - 4.3 - TJ = 125 °C Peak recovery current IRRM TJ = 25 °C TJ = 125 °C IF = 8 A, dIF/dt = 200 A/μs, VR = 390 V UNITS ns A TJ = 25 °C - 22 - TJ = 125 °C - 77 - - 26 - - 11 - A - 150 - nC MIN. TYP. MAX. UNITS TJ, TStg -65 - 175 °C Thermal resistance, junction-to-case RthJC - 4.6 5.5 Thermal resistance, junction-to-ambient RthJA Typical socket mount - - 70 Typical thermal resistance, case-to-heatsink RthCS Mounting surface, flat, smooth and greased - 0.5 - - 2 - g - 0.07 - oz. 6 (5) - 12 (10) kgf · cm (lbf · in) Reverse recovery charge Qrr Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge TJ = 125 °C Qrr IF = 8 A, dIF/dt = 600 A/μs, VR = 390 V nC ns THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range SYMBOL TEST CONDITIONS Weight Mounting torque Marking device Case style 2L TO-220 FullPAK °C/W ETX0806FP Revision: 25-Jul-2019 Document Number: 93546 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETX0806FP-M3 www.vishay.com Vishay Semiconductors 100 100 175°C 150°C Reverse Current - IR (µA) 10 100°C 75°C 0.1 50°C 0.01 25°C 0.001 10 0.0001 0 100 200 300 400 500 600 Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 100 Tj = 150°C 1 Junction Capacitance - CT (pF) Instantaneous Forward Current - IF (A) Tj = 175°C 125°C 1 Tj = 25°C 10 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1 0 Forward Voltage Drop - VF (V) 100 200 300 400 500 600 Reverse Voltage - VR (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Impedance ZthJC (°C/W) 10 D = 0.5 D = 0.2 1 D = 0.1 D = 0.05 Single Pulse (Thermal Resistance) D = 0.02 D = 0.01 0.1 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 25-Jul-2019 Document Number: 93546 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETX0806FP-M3 www.vishay.com Vishay Semiconductors 40 160 35 140 If = 8A, 125°C 30 DC 120 trr ( ns ) Allowable Case Temperature (°C) 180 100 25 80 20 If = 8A, 25°C 60 0 2 4 6 8 10 15 Average Forward Current - IF(AV)(A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current typical value 10 100 RMS Limit 18 16 250 14 12 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 10 8 6 4 2 0 0 2 4 6 8 10 12 Average Forward Current - IF(AV) (A) 200 If = 8A, 125°C 150 Qrr ( nC ) Average Power Loss ( Watts ) 22 20 1000 di F /dt (A/µs ) Fig. 7 - Typical Reverse Recovery vs. dIF/dt 100 Fig. 6 - Forward Power Loss Characteristics If = 8A, 25°C 50 typical value 0 100 1000 di F /dt (A/µs ) Fig. 8 - Typical Stored Charge vs. dIF/dt Revision: 25-Jul-2019 Document Number: 93546 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETX0806FP-M3 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (4) Qrr - area under curve defined by trr and IRRM (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code VS- E T X 08 06 FP -M3 1 2 3 4 5 6 7 8 1 - 2 - Vishay Semiconductors product Circuit configuration: E = single 3 - T = TO-220 4 - X = hyperfast recovery time 5 - Current code: 08 = 8 A 6 - Voltage code: 06 = 600 V 7 - FP = 2L TO-220 FullPAK 8 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-ETX0806FP-M3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96157 Part marking information www.vishay.com/doc?95392 Revision: 25-Jul-2019 Document Number: 93546 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors True 2 Pin TO-220 DIMENSIONS in millimeters and inches 0.002" 0.05 mm A A E ØP F B Q H1 D Term. 4 0.150" REF. 45° Ø 2.0 mm REF. L1 b1 L b c 60° 1 2 J1 e SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 4.32 4.57 0.170 0.180 b 0.71 0.91 0.028 0.036 b1 1.15 1.39 0.045 0.055 c 0.36 0.53 0.014 0.021 D 14.99 15.49 0.590 0.610 E 10.04 10.41 0.395 0.410 e 5.08 BSC 0.200 BSC F 1.22 1.37 0.048 0.054 H1 5.97 6.47 0.235 0.255 J1 2.54 2.79 0.100 0.110 L 13.47 13.97 0.530 0.550 L1 (1) 3.31 3.81 0.130 0.150 ØP 3.79 3.88 0.149 0.153 Q 2.60 2.84 0.102 0.112 Notes (1) Lead dimension and finish uncontrolled in L 1 • These dimensions are within allowable dimensions of JEDEC TO-220AB rev. J outline dated 3-24-87 • Controling dimension: Inch Revision: 05-Dec-12 Document Number: 95259 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 2L TO-220 FullPAK DIMENSIONS in millimeters 3.40 Hole Ø 3.10 10.6 10.0 3.7 3.2 2.80 2.44 7.31 6.50 16.0 15.8 Mold flash bleeding 3.3 3.1 Exposed Cu 13.56 12.90 2.54 TYP. 0.61 0.38 0.9 0.7 2.85 2.65 1.20 1.47 1.30 1.05 2.54 TYP. Bottom view R 0.7 (2 places) R 0.5 4.8 4.6 5° ± 0.5° 5° ± 0.5° Revision: 06-Jul-17 Document Number: 96157 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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