VS-FC420SA15
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Vishay Semiconductors
SOT-227 Power Module
Single Switch - Power MOSFET, 400 A
FEATURES
• ID = 400 A, TC = 25 °C
• ThunderFET Power MOSFET
• Excellent gate charge x RDS(on) product (FOM)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Maximum 175 °C junction temperature
• UL approved file E78996
SOT-227
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
PRIMARY CHARACTERISTICS
• DC/DC conversions
VDSS
150 V
RDS(on) at 200 A
1.93 mΩ
ID
300 A at 90 °C
• DC/AC inverter
Type
Modules - MOSFET
• Power supplies
Package
SOT-227
• Motor drives
- Uninterruptible power supplies
- AC/DC switch-mode power supplies
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
150
V
MOSFET
Drain to source voltage
Continuous drain current, VGS at 10 V
Pulsed drain current
VDSS
ID
TC = 25 °C
400
TC = 90 °C
300
IDM (1)
A
860
Power dissipation
PD
909
W
Gate to source voltage
VGS
± 20
V
Single pulse avalanche current
EAS
720
J
Avalanche current
IAS
120
A
TC = 25 °C
TC = 25 °C, L = 10 mH, VGS = 10 V
MODULE
Operating junction temperature range
TJ
-55 to +175
Operating storage temperature range
TStg
-40 to +150
Insulation voltage (RMS)
VISOL
any terminal to case, t = 1 min
2500
°C
V
Note
(1) Limited at max. junction temperature
Revision: 18-Nov-2020
Document Number: 96060
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THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
MIN.
TYP.
MAX.
Operating junction temperature range
SYMBOL
TJ
-55
-
175
Operating storage temperature range
TStg
-40
-
150
Junction to case
MOSFET
RthJC
Case to heatsink
Module
RthCS
TEST CONDITIONS
°C
-
-
0.165
Flat, greased surface
-
0.1
-
-
30
-
g
Torque to terminal
-
-
1.1 (9.7)
Nm (lbf. in)
Torque to heatsink
-
-
Weight
Mounting torque
UNITS
Case style
°C/W
1.3 (11.5) Nm (lbf. in)
SOT-227
ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
SYMBOL
V(BR)DSS
ΔV(BR)DSS/ΔTJ
TEST CONDITIONS
VGS = 0 V, ID = 500 μA
Reference to 25 °C, ID = 1.0 mA
MIN.
TYP.
MAX.
150
-
-
UNITS
V
-
9.0
-
mV/°C
Static drain to source on-resistance
RDS(on)
VGS = 10 V, ID = 200 A
-
1.93
2.75
mΩ
Gate threshold voltage
VGS(th)
VDS = VGS, ID = 1.0 mA
1.80
3.46
5.4
V
ΔVGE(th)/ΔTJ
VDS = VGS, ID = 1.0 mA
(25 °C to 125 °C)
-
9.6
-
mV/°C
VDS = 15 V, ID = 100 A, VGS = 10 V
-
200
-
S
VDS = 150 V, VGS = 0 V
-
0.5
10.0
VDS = 150 V, VGS = 0 V, TJ = 150 °C
-
19
-
VGS = ± 20 V
-
-
± 200
ID = 250 A
VDS = 75 V
VGS = 10 V
-
250
-
-
79
-
-
82
-
-
139
-
-
285
-
-
120
-
-
142
-
-
13.7
-
-
2.2
-
-
0.104
-
Temperature coefficient of threshold voltage
Forward transconductance
gfs
Drain to source leakage current
IDSS
Gate to source leakage
IGSS
Total gate charge
Qg
Gate to source charge
Qgs
Gate to drain ("Miller") charge
Qgd
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
tr
td(off)
tf
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
VDD = 75 V
ID = 100 A
Rg = 1 Ω
VGS = 10 V
VGS = 0 V
VDS = 25 V
f = 1 MHz
μA
nA
nC
ns
nF
SOURCE-DRAIN RATINGS AND CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Continuous source current (body diode)
Pulsed source current (body diode)
SYMBOL
TEST CONDITIONS
IS
ISM
MOSFET symbol
showing the
integral reverse
p-n junction diode
MIN.
TYP.
MAX.
-
-
476
UNITS
-
-
850
-
0.95
-
-
171
-
ns
-
1032
-
nC
-
12
-
A
D
G
A
S
Diode forward voltage
VSD
Reverse recovery time
trr
Reverse recovery charge
Qrr
Reverse recovery current
IRM
IS = 250 A, VGS = 0 V
TJ = 25 °C, IF = IS = 50 A,
dI/dt = 100 A/μs, VR = 50 V
V
Revision: 18-Nov-2020
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VS-FC420SA15
Vishay Semiconductors
180
5
160
4.6
140
RDS(on) - Drain-to-Source
On-Resistance (mΩ)
Allowable Case Temperature (°C)
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DC
120
100
80
60
40
20
VGS = 10V
4.2
ID = 100 A
3.8
3.4
3
2.6
2.2
1.8
0
0
100
200
300
400
500
20
40
60
80
100
120
140
160
180
ID - Continuous Drain Current (A)
TJ (°C)
Fig. 1 - Maximum Continuous Drain Current vs. Case Temperature
Fig. 4 - Typical Drain-to-Source On-Resistance vs. Temperature
400
120
350
VGS = 10V thru 7V
VDS = 20 V
100
300
ID (A)
ID (A)
80
VGS = 6V
250
200
150
TJ = 175 °C
60
TJ = 150 °C
40
TJ = 125 °C
100
VGS = 5V
50
TJ = 25 °C
20
0
0
0
1
2
3
4
5
2
3
VDS (V)
4
5
6
VGS (V)
Fig. 2 - Typical Drain to Source Current Output Characteristics
at TJ = 25 °C
Fig. 5 - Typical Transfer Characteristics
400
4.0
VGS = 10 V thru 7 V
TJ = 25 °C
350
3.5
300
3.0
VGS = 6 V
VGSth (V)
ID (A)
250
200
150
TJ = 125 °C
2.5
2.0
TJ = 150 °C
100
VGS = 5 V
0
0
1
2
3
4
TJ = 175 °C
1.5
50
5
1.0
0.50
0.75
1.00
1.25
1.50
1.75
VDS (V)
ID (mA)
Fig. 3 - Typical Drain to Source Current Output Characteristics
at TJ = 125 °C
Fig. 6 - Typical Gate Threshold Voltage Characteristics
Revision: 18-Nov-2020
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200
TJ = 25 °C
3.4
180
Turn-off Time (ns)
RDs(ON) (mΩ)
160
3
2.6
ID = 100 A
2.2
tf at 25 °C
140
120
tf at 125 °C
100
80
td(off) at 25 °C
td(off) at 125 °C
60
40
20
1.8
6
7
8
9
0
10
0
20
40
VGS (V)
100
120
Fig. 10 - Typical Turn-off Switching Time vs. ID
400
300
350
270
240
Turn-on Time (ns)
TJ = 175 °C
250
IS (A)
80
ID (A)
Fig. 7 - Typical Drain - State Resistance vs. Gate to Source Voltage
300
60
200
TJ = 125 °C
150
100
tr at 125 °C
210
tr at 25 °C
180
150
120
td(on) at 125 °C
90
60
TJ = 25 °C
50
td(on) at 25 °C
30
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
20
40
60
80
100
120
VSD (V)
ID (A)
Fig. 8 - Typical Body Diode Source-to-Drain Current Characteristics
Fig. 11 - Typical Turn-on Switching Time vs. ID
1
TJ = 175 °C
0.1
IDSS (mA)
Power Dissipation - PD(W)
1000
TJ = 150 °C
TJ = 125 °C
0.01
0.001
TJ = 25 °C
900
800
700
600
500
400
300
200
100
0.0001
0
25
50
75
100
125
150
VDSS (V)
Fig. 9 - Typical Zero Gate Voltage Drain Current
0
25
50
75
100
125
150
175
200
TC (°C)
Fig. 12 - Power Dissipation Curve
Revision: 18-Nov-2020
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ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
IDS - Drain to Source Current (A)
Fig. 13 - Maximum Thermal Impedance Junction-to-Case Characteristics
1000
(on
d
ite
100
DS
yR
b
Lim
)
tp
tp
=
=
10
0μ
s
1m
s
tp = 500 μs
10
1
TC = 25 °C
TJ = 175 °C
Single Pulse
BVdss limited
0.1
0.1
1
10
100
VDS - Drain to Source Voltage (V)
Fig. 14 - Safe Operating Area
ORDERING INFORMATION TABLE
Device code
VS-
F
C
420
S
A
15
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
MOSFET module
3
-
MOSFET die generation
4
-
Current rating (420 = 420 A)
5
-
Circuit configuration (S = single switch)
6
-
Package indicator (SOT-227)
7
-
Voltage rating (15 = 150 V)
Revision: 18-Nov-2020
Document Number: 96060
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CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
D (3)
3
(D)
2
(G)
4
(S)
1
(S)
G (2)
S (1-4)
Lead Assignment
Single switch
(S)
S
(D)
4
3
1
2
(S)
(G)
Revision: 18-Nov-2020
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DIMENSIONS in millimeters
38.30 (1.508)
37.80 (1.488)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
-A-
4 x M4 nuts
6.25 (0.246)
6.50 (0.256)
12.50 (0.492)
13.00 (0.512)
25.70 (1.012)
24.70 (0.972)
-B-
7.45 (0.293)
7.60 (0.299)
14.90 (0.587)
15.20 (0.598)
R full 2.10 (0.083)
2.20 (0.087)
30.50 (1.200)
29.80 (1.173)
31.50 (1.240)
32.10 (1.264)
4x
2.20 (0.087)
1.90 (0.075)
8.30 (0.327)
7.70 (0.303)
0.25 (0.010) M C A M B M
4.10 (0.161)
4.50 (0.177)
12.30 (0.484)
11.70 (0.460)
-C0.13 (0.005)
25.00 (0.984)
25.50 (1.004)
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Outline Dimensions
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SOT-227 Generation 2
DIMENSIONS in millimeters (inches)
37.80 (1.488)
38.30 (1.508)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
-A-
4 x M4 nuts
6.25 (0.246)
6.50 (0.256)
12.50 (0.492)
13.00 (0.512)
7.45 (0.293)
7.60 (0.299)
14.90 (0.587)
15.20 (0.598)
24.70 (0.972)
25.70 (1.012)
R full 2.07 (0.081)
2.12 (0.083)
29.80 (1.173)
30.50 (1.200)
31.50 (1.240)
32.10 (1.264)
4x
1.90 (0.075)
2.20 (0.087)
7.70 (0.303)
8.30 (0.327)
0.25 (0.010) M C A M B M
4.10 (0.161)
4.50 (0.177)
5.33 (0.210)
5.96 (0.234)
11.60 (0.457)
12.30 (0.484)
24.70 (0.972)
25.50 (1.004)
Note
• Controlling dimension: millimeter
Document Number: 95423
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Revision: 19-May-2020
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Disclaimer
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