VS-FC80NA20

VS-FC80NA20 www.vishay.com Vishay Semiconductors SOT-227 Power Module High Side Chopper - Power MOSFET, 100 A FEATURES 3 (D) MOSFET • Enhanced body diode dV/dt and dIF/dt capability • Improved gate avalanche and dynamic dV/dt ruggedness 2 (G) 1 (S, K) • Fully characterized capacitance and avalanche SOA • Fully isolated package • Easy to use and parallel 4 (A) SOT-227 • Low on-resistance PRIMARY CHARACTERISTICS • Simple drive requirements MOSFET VDSS 200 V RDS(on) 9.6 m ID at 97 °C 80 A Type Modules - MOSFET Package CHOPPER DIODE • Low forward voltage drop • Ultrafast, soft reverse recovery, with high operating junction temperature (TJ max. = 175 °C) • UL approved file E78996 SOT-227 IF at 90 °C 64 A • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 trr 33 ns  CHOPPER DIODE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS 200 V MOSFET Drain to source voltage Continuous drain current VGS at 10 V Pulsed drain current Power dissipation Gate to source voltage Single pulse avalanche energy VDSS ID TC = 25 °C TC = 90 °C IDM (1) PD 108 83 A 170 TC = 25 °C 405 TC = 90 °C 229 W VGS ± 30 V EAS (2) 600 mJ Avalanche current IAR (3) 50 A Repetitive avalanche energy EAR (3) 300 mJ 200 V CHOPPER DIODE Cathode to anode voltage Continuous forward current Maximum peak one cycle non-repetitive surge current Maximum power dissipation, chopper diode VR IF TC = 25 °C 92 TC = 90 °C 64 IFSM PD Tc = 90 °C A 280 A 79 W MODULE Operating junction temperature range TJ -55 to +175 Storage temperature range TStg -55 to +175 RMS insulation voltage VISO Any terminal to case, t = 1 min 2500 °C V Notes (1) Repetitive rating; pulse width limited by maximum junction temperature starting T = 25 °C J (2) Limited by T max., starting T = 25 °C, L = 0.23 mH, R = 25 , I J J g AS = 72 A, VGS = 10 V. Part not recommended for use above this value (3) Repetitive rating; pulse width limited by maximum junction temperature starting T = 25 °C, L = 0.23 mH, R = 25 , V J g GS = 10 V, duty cycle 1 % Revision: 10-Sep-2019 Document Number: 94856 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FC80NA20 www.vishay.com Vishay Semiconductors THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Junction to case thermal resistance Case to sink, flat greased surface (heatsink compound thermal conductivity = 1 W/mK) SYMBOL MOSFET Chopper Diode Module MIN. TYP. MAX. - - 0.37 - - 1.08 - 0.10 - RthJC RthCS Mounting torque UNITS °C/W Torque to terminal - - 1.1 (9.7) Torque to heatsink - - 1.8 (15.9) Nm (lbf.in) - 30 Approximate module weight Nm (lbf.in) - g ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS MOSFET Drain-to-source breakdown voltage Breakdown voltage temperature coefficient Static drain-to-source on-resistance Gate threshold voltage Forward transconductance Drain-to-source leakage current Gate-to-source forward leakage Gate-to-source reverse leakage Total gate charge V(BR)DSS V(BR)DSS/TJ RDS(on) (1) VGS(th) gfs IDSS IGSS Qg Gate-to-source charge Qgs Gate-to-drain (“Miller”) charge Qgd Turn-on delay time td(on) Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time VGS = 10 V, ID = 80 A - - V - 0.21 - V/°C m - 9.6 14.0 2.7 4.1 5.5 VDS = VGS, ID = 250 μA , TJ = 125 °C - 2.6 - VDS = 20 V, ID = 80 A - 200 - VDS = 200 V, VGS = 0 V - 0.6 25 VDS = 200 V, VGS = 0 V, TJ = 125 °C - 20 500 VDS = 200 V, VGS = 0 V, TJ = 175 °C - 1 5 VGS = 20 V - - 120 VGS = -20 V - - -120 - 161 - - 54 - - 52 - VDS = VGS, ID = 250 μA ID = 80 A, VDS = 100 V, VGS = 10 V, see fig. 15 and fig. 28 (1) - 148 - 215 - - 114 - tf - 125 - td(on) - 132 - - 215 - - 124 - - 108 - - 3 - - 10 720 - td(off) tr td(off) Fall time tf LS Ciss Coss VDD = 100 V, ID = 80 A, Rg = 2.5 ,  L = 500 μH VDD = 100 V, ID = 80 A, Rg = 2.5 , L = 500 μH, TJ = 125 °C Between lead and center of die contact VGS = 0 V, VDS = 50 V, f = 1.0 MHz,  see fig. 14 Crss Drain to Case Capacitance 200 - tr Internal source inductance Input capacitance VGS = 0 V, ID = 500 μA Reference to 25 °C, ID = 1 mA Cd-cs VGS = 0 V, (G-S shorted); f = 1 MHz VBR IR = 100 μA - 810 - - 160 - - 50 - V S μA mA nA nC ns ns nH pF CHOPPER DIODE Diode reverse breakdown voltage Forward voltage drop VFM 200 - - IF = 30 A - 0.94 1.08 IF = 30 A, TJ = 125 °C - 0.8 - IF = 30 A, TJ = 175 °C - 0.74 - VR = VR rated - 1 50 - 7 - V μA Reverse leakage current IRM VR = VR rated, TJ = 125 °C VR = VR rated, TJ = 175 °C - 0.15 1 mA Junction capacitance CT VR = 200 V - 119 - pF Note (1) Pulse width  400 μs, duty cycle  2 % Revision: 10-Sep-2019 Document Number: 94856 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FC80NA20 www.vishay.com Vishay Semiconductors SOURCE-DRAIN RATINGS AND CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. IS UNITS MOSFET - 108 ISM (1) MOSFET symbol showing the integral reverse p-n junction diode - Pulsed source current (body diode) - - 170 TJ = 25 °C, IS = 80 A, VGS = 0 V - 0.88 1.02 Body diode forward voltage VSD (2) TJ = 125 °C, IS = 80 A, VGS = 0 V - 0.76 - TJ = 175 °C, IS = 80 A, VGS = 0 V - 0.70 - - 145 - - 11 - A - 790 - nC ns Continuous source current (body diode) Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Forward turn-on time ton TJ = 25 °C, IF = 30 A, dIF/dt = 100 A/μs,  VR = 100 V (2) TJ = 125 °C, IF = 30 A, dIF/dt = 100 A/μs,  VR = 100 V (2) A V ns - 170 - - 13.5 - A - 1140 - nC Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD) DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS ns CHOPPER DIODE Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr TJ = 25 °C, IF = 30 A, dIF/dt = 200 A/μs,  VR = 100 V (2) TJ = 25 °C, IF = 30 A, dIF/dt = 200 A/μs,  VR = 100 V (2) - 33 - - 3.5 - A - 59 - nC ns - 59 - - 8.3 - A - 238 - nC Notes (1) Repetitive rating, pulse width limited by maximum junction temperature (see fig. 27) (2) Pulse width  300 μs, duty cycle  2 % 1000 175 150 100 125 DC ID (A) Allowable Case Temperature (°C) 200 100 75 TJ = 25 °C TJ = 125 °C TJ = 175 °C 10 50 25 0 0 25 50 75 100 125 1 0.01 0.1 1 10 ID - Continuous Drain Current (A) VDS (V) Fig. 1 - Maximum MOSFET Drain-Source Current vs. Case Temperature Fig. 2 - Typical MOSFET Output Characteristics, VGS = 10 V Revision: 10-Sep-2019 Document Number: 94856 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FC80NA20 www.vishay.com Vishay Semiconductors 35 200 180 160 140 ID (A) 120 RDS(on) - Drain-to-Source On-Resistance (mΩ) VGE = 7 V VGE = 8 V VGE = 9 V VGE = 10 V VGE = 12 V VGE = 15 V 100 80 60 40 ID = 80 A VGS = 10 V 30 25 20 15 10 20 5 0 0 0.5 1 1.5 2 2.5 0 3 50 75 125 150 175 200 TJ (°C) Fig. 3 - Typical MOSFET Output Characteristics, at TJ = 25 °C Fig. 6 - Typical Drain to Source On-Resistance vs. Temperature 100 VGE = 7 V VGE = 8 V VGE = 9 V VGE = 10 V VGE = 12 V VGE = 15 V 180 160 140 VDS = 20 V 90 80 70 60 ID (A) 120 100 TJ = 125 °C 50 80 40 60 30 40 20 20 10 TJ = 25 °C 0 0 0 1 2 3 4 5 3 6 4 5 6 7 8 VGS (V) VDS (V) Fig. 4 - Typical MOSFET Output Characteristics, at TJ = 125 °C Fig. 7 - Typical MOSFET Transfer Characteristics 5.0 200 VGE = 7 V VGE = 8 V VGE = 9 V VGE = 10 V VGE = 12 V VGE = 15 V 160 140 120 4.5 TJ = 25 °C 4.0 VGEth (V) 180 ID (A) 100 VDS (V) 200 ID (A) 25 100 80 3.5 TJ = 125 °C 3.0 60 40 2.5 20 2.0 0 0 1 2 3 4 5 6 7 8 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VDS (V) ID (mA) Fig. 5 - Typical MOSFET Output Characteristics, at TJ = 175 °C Fig. 8 - Typical MOSFET Gate Threshold Voltage Revision: 10-Sep-2019 Document Number: 94856 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FC80NA20 www.vishay.com Vishay Semiconductors 100 200 90 180 80 160 70 140 120 IF (A) ISD (A) 60 TJ = 25 °C TJ = 125 °C TJ = 150 °C 50 40 100 TJ = 175 °C 80 30 60 20 40 10 20 0 TJ = 125 °C TJ = 25 °C 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD (V) VFM (V) Fig. 9 - Typical MOSFET Body Diode Forward Current Characteristics Fig. 12 - Typical Chopper Diode Forward Characteristics 10 1 0.1 0.1 IRM (mA) IDSS (mA) Tj = 175 °C TJ = 175 °C 1 TJ = 125 °C 0.01 0.001 0.01 Tj = 125 °C 0.001 Tj = 25 °C TJ = 25 °C 0.0001 0.0001 50 75 100 125 150 175 200 50 75 100 VDSS (V) 150 175 200 VR (V) Fig. 13 - Typical Chopper Diode Reverse Leakage Current Fig. 10 - Typical MOSFET Zero Gate Voltage Drain Current 1000 200 175 150 125 Switching Time (ns) Allowable Case Temperature (°C) 125 DC 100 75 50 tr td(on) 100 td(off) tf 25 0 10 0 20 40 60 80 100 0 10 20 30 40 50 60 70 80 90 IF(AV) - Average Forward Current (A) ID (A) Fig. 11 - Maximum Allowable Forward Current vs. Case Temperature Fig. 14 - Typical MOSFET Switching Time vs. ID TJ = 125 °C, VDD = 100 V, Rg = 2.5 , VGS = 10 V, L = 500 μH Revision: 10-Sep-2019 Document Number: 94856 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FC80NA20 www.vishay.com Vishay Semiconductors 1000 18 14 td(on) td(off) TJ = 125 °C 12 100 Irr (A) Switching Time (ns) 16 tr tf 10 8 TJ = 25 °C 6 4 2 10 0 2 4 6 8 10 12 14 16 100 200 Rg (Ω) 400 500 dIF/dt (A/μs) Fig. 15 - Typical MOSFET Switching Time vs. Rg TJ = 125 °C, VDD = 100 V, ID = 80 A, L = 500 μH Fig. 17 - Typical Chopper Diode Reverse Recovery Current vs. dIF/dt Vrr = 100 V, IF = 30 A 80 500 75 450 70 400 65 TJ = 125 °C 350 60 TJ = 125 °C 55 Qrr (nC) trr (ns) 300 50 45 40 300 250 200 150 35 TJ = 25 °C TJ = 25 °C 100 30 50 25 0 20 100 200 300 400 100 500 200 300 400 500 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 16 - Typical Chopper Diode Reverse Recovery Time vs. dIF/dt Vrr = 100 V, IF = 30 A Fig. 18 - Typical Chopper Diode Reverse Recovery Charge vs. dIF/dt Vrr = 100 V, IF = 30 A ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.75 0.50 0.25 0.10 0.05 0.02 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 19 - Maximum Thermal Impedance ZthJC Characteristics - (MOSFET) Revision: 10-Sep-2019 Document Number: 94856 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FC80NA20 www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 0.1 0.75 0.50 0.25 0.10 0.05 0.02 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 20 - Maximum Thermal Impedance Characteristics (Chopper Diode) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING 3 (D) 3 (D) 2 (G) 4 (A) 1 (S, K) 2 (G) 1 (S, K) High side chopper 4 (A) N 4 3 1 2 Revision: 10-Sep-2019 Document Number: 94856 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FC80NA20 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- F C 80 N A 20 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - MOSFET module 3 - MOSFET die generation 4 - Current rating (80 = 80 A) 5 - N = high side chopper 6 - Package indicator SOT-227 7 - Voltage rating (20 = 200 V) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Revision: 10-Sep-2019 Document Number: 94856 8 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation 2 DIMENSIONS in millimeters (inches) 37.80 (1.488) 38.30 (1.508) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) 24.70 (0.972) 25.70 (1.012) R full 2.07 (0.081) 2.12 (0.083) 29.80 (1.173) 30.50 (1.200) 31.50 (1.240) 32.10 (1.264) 4x 1.90 (0.075) 2.20 (0.087) 7.70 (0.303) 8.30 (0.327) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 5.33 (0.210) 5.96 (0.234) 11.60 (0.457) 12.30 (0.484) 24.70 (0.972) 25.50 (1.004) Note • Controlling dimension: millimeter Document Number: 95423 1 For technical questions, contact: DiodesAmericas@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 19-May-2020 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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