VS-GA100NA60UP

VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolated package (2500 VAC/RMS) • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for industrial market SOT-227 BENEFITS • Designed for increased operating efficiency in power conversion: PFC, UPS, SMPS, welding, induction heating • Lower overall losses available at frequencies  20 kHz • Easy to assemble and parallel • Direct mounting to heatsink • Lower EMI, requires less snubbing • Plug in compatible with other SOT-227 packages PRODUCT SUMMARY VCES 600 V IC DC 100 A VCE(on) at 100 A, 25 °C 1.8 V ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter breakdown voltage Continuous collector current SYMBOL VCES ICM Clamped inductive load current ILM Gate to emitter voltage VGE RMS isolation voltage VISOL Operating junction and storage temperature range Mounting torque TC = 25 °C IC Pulsed collector current Maximum power dissipation TEST CONDITIONS MAX. UNITS 600 V 100 TC = 100 °C 50 A 200 Repetitive rating: VGE = 20 V; pulse width limited by maximum junction temperature (fig. 20) 200 Any terminal to case, t = 1 minute 2500 TC = 25 °C 250 TC = 100 °C 100 ± 20 PD TJ, TStg 6 to 32 or M3 screw V W - 55 to + 150 °C 12 (1.3) Ibf · in (N · m) THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TYP. MAX. Junction to case, IGBT RthJC - 0.50 Thermal resistance, junction to case, diode RthJC - 1.0 Case to sink, flat, greased surface RthCS 0.05 - 30 - Weight of module Revision: 01-Feb-12 UNITS °C/W g Document Number: 94543 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GA100NA60UP www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Temperature coeffecient of breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS VGE = 0 V, IC = 250 μA V(BR)CESTJ VGE = 0 V, IC = 1.0 mA VCE(on) VGE = 15 V, IC = 100 A VGE = 15 V, IC = 50 A Collector to emitter saturation voltage See fig. 1, 4 VGE = 15 V, IC = 50 A, TJ = 150 °C MIN. TYP. MAX. UNITS 600 - - V - 0.36 - V/°C 2.1 - 1.49 - 1.80 - - 1.47 - V VGE(th) VCE = VGE, IC = 250 μA 3.0 - 6.0 Temperature coefficient of threshold voltage VGE(th)/ TJ VCE = VGE, IC = 250 μA - - 7.6 - Forward transconductance gfe VCE = 100 V, IC = 50 A 34 52 - S VGE = 0 V, VCE = 600 V - - 250 μA VGE = 0 V, VCE = 600 V, TJ = 150 °C - - 1.3 mA Gate threshold voltage Zero gate voltage collector current ICES Diode forward voltage drop VFM Gate to emitter leakage current IGES IC = 50 A See fig. 12 IC = 50 A, TJ = 150 °C VGE = ± 20 V mV/°C - 1.3 1.6 - 1.16 1.3 - - ± 100 nA MIN. TYP. MAX. UNITS - 430 640 V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Total gate charge (turn-on) Qg Gate emitter charge (turn-on) Qge Gate collector charge (turn-on) Qgc Turn-on delay time Rise time Turn-off delay time Fall time - 48 72 - 130 190 td(on) - 57 - tr - 80 - - 240 - - 120 - - 0.41 - - 2.51 - - 2.92 4.4 - 57 - - 80 - - 380 - td(off) tf Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Ets Turn-on delay time td(on) Rise time Turn-off delay time Fall time Total switching loss Internal emitter inductance tr td(off) tf Ets See fig. 7 TJ = 25 °C IC = 60 A, VCC = 480 V VGE = 15 V, Rg = 5.0 energy losses include “tail” and diode reverse recovery TJ = 150 °C IC = 60 A, VCC = 480 V VGE = 15 V, Rg = 5.0 energy losses include “tail” and diode reverse recovery LE Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Diode reverse recovery time trr Diode peak reverse recovery current Irr Diode reverse recovery charge Qrr Diode peak rate of fall recovery during tb dI(rec)M/dt Revision: 01-Feb-12 TEST CONDITIONS IC = 50 A VCC = 400 V VGE = 15 V VGE = 0 V VCC = 30 V f = 1.0 MHz TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C See fig. 6 See fig. 13 See fig. 14 See fig. 15 See fig. 16 IF = 50 A VR = 200 V dI/dt = 200 A/μs nC ns mJ ns - 170 - - 4.78 - mJ nH - 2.0 - - 7400 - - 730 - - 90 - - 90 140 - 120 180 - 7.3 11 - 11 16 - 360 550 - 780 1200 - 370 - - 220 - pF ns A nC A/μs Document Number: 94543 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GA100NA60UP Vishay Semiconductors 1000 Maximum DC Collector Current (A) IC - Collector-to-Emitter Current (A) www.vishay.com °C TJJ = 25 °C TJJ = 150 °°C C 100 10 VVGE = 15V 15 V GE = 20 20μs μs PULSE Pulse Width WIDTH 1 0.0 1.0 2.0 3.0 4.0 100 80 60 40 20 0 25 5.0 50 1000 TJ = 150 °C 100 TJ = 25 °C 1 6.0 7.0 8.0 125 150 Fig. 3 - Maximum Collector Current vs. Case Temperature VCE - Collector-to-Emitter Voltage (V) IC - Collector-to-Emitter Current (A) Fig. 1 - Typical Output Characteristics 5.0 100 TC - Case Temperature (°C) VCE - Collector-to-Emitter Voltage (V) 10 75 9.0 2.5 VGE = 15 V 80 μs Pulse width 2.0 IC = 100 A IC = 50 A 1.5 IC = 25 A 1.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ - Junction Temperature (°C) VGE - Gate-to-Emitter Voltage (V) Fig. 4 - Typical Collector to Emitter Voltage vs. Junction Temperature Fig. 2 - Typical Transfer Characteristics ZthJC - Thermal Response 1 D = 0.50 0.1 0.01 D = 0.20 PDM D = 0.10 D = 0.05 D = 0.02 D = 0.01 t1 t2 Single pulse (thermal response) 0.001 0.00001 0.0001 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction to Case Revision: 01-Feb-12 Document Number: 94543 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GA100NA60UP www.vishay.com Vishay Semiconductors 14 000 100 C - Capacitance (pF) 12 000 = 0 V, f = 1 MHz = Cg e + Cg c , Cce shorted = Cg c = Cce + Cg c Total Switching Loss (mJ) V GE Cies Cres Coes 10 000 C ies 8000 6000 C oes 4000 2000 0 C res 1 10 R G = 5.0 Ω VGE = 15 V VCC = 480 V I C = 120 A 10 I C = 60 A I C = 30 A 1 0.1 - 60 - 40 - 20 0 100 VCE - Collector-to-Emitter Voltage (V) TJ - Junction Temperature (°C) Fig. 9 - Typical Switching Losses vs. Junction Temperature Fig. 6 - Typical Capacitance vs. Collector to Emitter Voltage 12 V CC = 400 V I C = 50 A Total Switching Loss (mJ) VGE - Gate-to-Emitter Voltage (V) 20 16 12 8 4 RG = 5.0 Ω TJ = 150 °C VGE = 15 V VCC = 480 V 10 8 6 4 2 0 0 0 100 200 300 400 20 500 QG - Total Gate Charge (nC) IC - Collector-to-Emitter Current (A) VCC = 480 V VGE = 15 V TJ = 25 °C IC = 60 A 6 4 2 0 10 20 30 40 50 RG - Gate Resistance (Ω) Fig. 8 - Typical Switching Losses vs. Gate Resistance Revision: 01-Feb-12 60 80 100 Fig. 10 - Typical Switching Losses vs. Collector to Emitter Current 10 8 40 IC - Collector Current (A) Fig. 7 - Typical Gate Charge vs. Gate to Emitter Voltage Total Switching Loss (mJ) 20 40 60 80 100 120 140 160 1000 VGE = 20 V T J = 125 °C 100 10 Safe operating area 1 1 10 100 1000 VCE - Collector-to-Emitter Voltage (V) Fig. 11 - Turn-Off SOA Document Number: 94543 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GA100NA60UP Vishay Semiconductors 1000 4000 3000 VR = 200 V TJ = 125 °C TJ = 25 °C 100 Qrr (nC) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 150 °C TJ = 125 °C TJ = 25 °C 2000 IF = 100 A IF = 50 A IF = 25 A 10 1000 0 1 0.0 0.4 0.8 1.2 1.6 100 2.0 1000 dIF/dt (A/μs) VFM - Forward Voltage Drop (V) Fig. 12 - Typical Forward Voltage Drop vs. Instantaneous Forward Current 150 10 000 IF = 100 A IF = 50 A IF = 25 A dIRECM/dt (A/μs) 120 trr (nC) 90 60 30 0 Fig. 15 - Typical Stored Charge vs. dIF/dt VR = 200 V TJ = 125 °C TJ = 25 °C 100 1000 dIF/dt (A/μs) IF = 100 A IF = 50 A IF = 25 A VR = 200 V TJ = 125 °C TJ = 25 °C 1000 100 100 1000 dIF/dt (A/μs) Fig. 13 - Typical Reverse Recovery vs. dIF/dt Fig. 16 - Typical dI(rec)M/dt vs. dIF/dt 100 IRR (A) IF = 100 A IF = 50 A IF = 25 A 10 VR = 200 V TJ = 125 °C TJ = 25 °C 1 100 1000 dIF/dt (A/μs) Fig. 14 - Typical Recovery Current vs. dIF/dt Revision: 01-Feb-12 Document Number: 94543 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GA100NA60UP www.vishay.com Vishay Semiconductors Same type device as D.U.T. Qrr = tx 10 % VCC 430 µF 80 % of VCE trr IC ∫ trr IC dt tx 10 % Irr VCC D.U.T. Vpk Irr Diode recovery waveforms Fig. 17a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Erec = Diode reverse recovery energy 90% t4 Vd IC dt t3 t4 10% Vge VC t3 ∫ Fig. 1 - Test Waveforms for Circuit of Fig. 17a, Defining Erec, trr, Qrr, Irr 90% td(off) 10% IC 5% VG Gate signal device under test tf tr t d(on) t=5μs E on E off Current D.U.T. E ts = (Eon +Eoff ) Fig. 17b - Test Waveforms for Circuit of Fig. 17a, Defining Eoff, td(off), tf Voltage in D.U.T. Current in D1 Gate voltage D.U.T. 10 % + VG + VG D.U.T. voltage and current Vce VCC 10 % IC 90 % IC tr td(on) t1 t2 Fig. 17e - Macro Waveforms for Figure 17a's Test Circuit Ipk IC 5 % VCE ∫ Eon = t1 t0 t2 VCE IC dt t1 t2 Fig. 17c - Test Waveforms for Circuit of Fig. 17a, Defining Eon, td(on), tr Revision: 01-Feb-12 Document Number: 94543 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GA100NA60UP www.vishay.com Vishay Semiconductors L 50 V RL = D.U.T. 1000 V VC* 0 - 480 V 480 V 4 x IC at 25 °C 6000 µF 100 V Fig. 18b - Pulsed Collector Current Test Circuit Fig. 18a - Clamped Inductive Load Test Circuit ORDERING INFORMATION TABLE Device code VS- G A 100 N A 60 U P 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Device: G = IGBT 3 - Silicon technology: A = Generation 4 IGBT, Generation 2 HEXFRED® 4 - Current rating (100 = 100 A) 5 - N = High side chopper 6 - SOT-227 7 - Voltage rating (60 = 600 V) 8 - U = Ultrafast with matching diode 9 - None = Standard production P = Lead (Pb)-free CIRCUIT CONFIGURATION 3 2 1 4 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95036 Packaging information www.vishay.com/doc?95037 Revision: 01-Feb-12 Document Number: 94543 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors SOT-227 DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Chamfer 2.00 (0.079) x 45° 4 x M4 nuts Ø 4.40 (0.173) Ø 4.20 (0.165) -A3 4 6.25 (0.246) 12.50 (0.492) 25.70 (1.012) 25.20 (0.992) -B- 1 2 R full 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) -C- 12.30 (0.484) 11.80 (0.464) 0.12 (0.005) Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter Document Number: 95036 Revision: 28-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000