VS-GA100TS120UPbF
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Vishay Semiconductors
INT-A-PAK™ “Half-Bridge” (Ultrafast Speed IGBT), 100 A
FEATURES
• Generation 4 IGBT technology
• Ultrafast: Optimized for high speed 8 kHz to
40 kHz in hard switching, > 200 kHz in resonant
mode
• Very low conduction and switching losses
• HEXFRED® antiparallel diodes with ultrasoft recovery
• Industry standard package
• UL approved file E78996
INT-A-PAK
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
PRODUCT SUMMARY
VCES
1200 V
• Increased operating efficiency
IC DC
182 A
• Direct mounting to heatsink
VCE(on) at 100 A, 25 °C
2.25 V
• Performance optimized for power conversion: UPS,
SMPS, welding
• Lower EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
TEST CONDITIONS
MAX.
UNITS
1200
V
TC = 25 °C
182
TC = 93 °C
100
Repetitive rating; VGE = 20 V, pulse width
limited by maximum junction temperature
200
Pulsed collector current
ICM
Peak switching current
See fig. 17
ILM
200
Peak diode forward current
IFM
200
Gate to emitter voltage
VGE
± 20
RMS isolation voltage
VISOL
Maximum power dissipation
Operating junction temperature range
Storage temperature range
Revision: 26-Mar-12
PD
A
V
Any terminal to case, t = 1 minute
2500
TC = 25 °C
520
TC = 85 °C
270
W
TJ
- 40 to + 150
TStg
- 40 to + 125
°C
Document Number: 94428
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Temperature coefficient of threshold voltage
SYMBOL
V(BR)CES
VCE(on)
VGE(th)
VGE(th)/TJ
Forward transconductance
gfe
Collector to emitter leaking current
ICES
Maximum diode forward voltage
VFM
Gate to emitter leakage current
IGES
TEST CONDITIONS
MIN.
TYP.
MAX.
1200
-
-
VGE = 15 V, IC = 100 A
-
2.25
3
VGE = 15 V, IC = 100 A, TJ = 125 °C
-
2
2.4
VGE = 0 V, IC = 1 mA
IC = 1.25 mA
UNITS
V
3.0
4.4
6.0
VCE = VGE, IC = 1.25 mA
-
- 12
-
mV/°C
VCE = 25 V, IC = 100 A
Pulse width 50 μs, single shot
-
136
-
S
VGE = 0 V, VCE = 1200 V
-
0.03
1.0
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
-
4.2
10
VGE = 0 V, IF = 100 A
-
3.3
4.0
VGE = 0 V, IF = 100 A, TJ = 125 °C
-
3.2
3.8
VGE = ± 20 V
-
-
250
nA
MIN.
TYP.
MAX.
UNITS
-
830
1245
-
140
210
mA
V
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Total gate charge (turn-on)
Qg
Gate to emitter charge (turn-on)
Qge
TEST CONDITIONS
VCC = 400 V
IC = 124 A
Gate to collector charge (turn-on)
Qgc
-
275
412
Turn-on delay time
td(on)
-
570
-
Rg1 = 15
Rg2 = 0
IC = 100 A
VCC = 720 V
-
85
-
-
581
-
-
276
-
VGE = ± 15 V
TJ = 25 °C
-
7.6
-
-
6.8
-
Total switching energy
Ets
(1)
-
14.4
-
Turn-on delay time
td(on)
-
571
-
Rise time
Turn-off delay time
Fall time
tr
td(off)
tf
Turn-on switching energy
Eon
Turn-off switching energy
Eoff(1)
Rise time
Turn-off delay time
Fall time
tr
td(off)
tf
Turn-on switching energy
Eon
Turn-off switching energy
Eoff(1)
Ets
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Diode peak rate of fall of recovery during tb
Qrr
dI(rec)M/dt
ns
mJ
Rg1 = 15
Rg2 = 0
IC = 100 A
VCC = 720 V
-
89
-
-
606
-
-
649
-
VGE = ± 15 V
TJ = 125 °C
-
10
-
-
16
-
-
26
45
-
18 672
-
-
830
-
-
161
-
-
149
-
ns
-
104
-
A
(1)
Total switching energy
nC
VGE = 0 V
VCC = 30 V
f = 1 MHz
IC = 100 A
Rg1 = 15
Rg2 = 0
VCC = 720 V
dI/dt = 1300 A/μs
ns
mJ
pF
-
7664
-
nC
-
1916
-
A/μs
Note
(1) Repetitive rating; V
GE = 20 V, pulse width limited by maximum junction temperature
Revision: 26-Mar-12
Document Number: 94428
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Thermal resistance, junction to case
IGBT
TEST CONDITIONS
RthJC
Diode
Thermal resistance, case to sink per module
RthCS
case to heatsink
Mounting torque
case to terminal 1, 2 and 3
For screws M5 x 0.8
Weight of module
TYP.
MAX.
-
0.24
-
0.35
0.1
-
-
4.0
-
3.0
200
-
UNITS
°C/W
Nm
g
Duty cycle: 50 %
TJ = 125 °C
Tsink = 90 °C
Gate drive as specified
Power dissipation = 170 W
75
Square wave:
60 % of rated
voltage
50
-
Load Current (A)
100
25
Ideal diodes
0
0.1
1
10
100
f - Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of Fundamental)
IC - Collector to Emitter Current (A)
IC - Collector Current (A)
1000
VGE = 15 V
500 µs pulse width
100
125 °C
25 °C
10
1
0.5
1.0
1.5
2.0
2.5
3.0
1000
VGE = 20 V
500 µs pulse width
100
125 °C
25 °C
10
1
4.0
4.5
5.0
5.5
6.0
6.5
7.0
VCE - Collector to Emitter Voltage (V)
VGE - Gate to Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Revision: 26-Mar-12
7.5
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VCE - Collector to Emitter Voltage (V)
Vishay Semiconductors
TC - Case Temperature (°C)
160
140
120
DC
100
80
60
40
20
0
0
40
80
120
160
3.0
VGE = 15 V
500 µs pulse width
IC = 200 A
2.5
IC = 100 A
2.0
IC = 50 A
1.5
0
200
30
60
90
120
150
Maximum DC Collector Current (A)
TJ - Junction Temperature (°C)
Fig. 4 - Case Temperature vs.
Maximum Collector Current
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
ZthJC - Thermal Response
1
PDM
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single pulse
(thermal resistance)
0.01
0.0001
0.001
0.01
t1
t2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
20
VGE = 0 V, f = 1 MHz
Cies = Cge + Cgc, Cce shorted
Cres = Cgc
Coes = Cce + Cgc
28 000
Cies
21 000
Coes
14 000
7000
Cres
VGE - Gate to Emitter Voltage (V)
C - Capacitance (pF)
35 000
VCC = 400 V
IC = 113 A
16
12
8
4
0
0
1
10
100
0
300
600
900
VCE - Collector to Emitter Voltage (V)
QG - Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector to Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
Revision: 26-Mar-12
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300
IC - Collector Current (A)
Total Switching Losses (mJ)
40
35
30
25
200
100
Safe operating area
20
0
10
20
30
40
50
0
300
900
1200
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 12 - Reverse Bias SOA
IC = 200 A
IC = 100 A
10
IC = 50 A
0
30
60
90
120
150
IF - Instantaneous Forward Current (A)
VCE - Collector to Emitter Voltage (V)
1
1500
1000
100
TJ = 125 °C
TJ = 25 °C
10
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VF - Forward Voltage Drop (V)
TJ - Junction Temperature (°C)
Fig. 13 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
16 000
60
50
12 000
VR = 720 V
TJ = 125 °C
TJ = 25 °C
40
Qrr (nC)
Total Switching Losses (mJ)
600
RG - Gate Resistance (Ω)
100
Total Switching Losses (mJ)
VGE = 20 V
TJ = 125 °C
VCE measured at terminal (peak voltage)
30
8000
20
4000
IF = 200 A
IF = 100 A
IF = 50 A
10
0
0
50
100
150
200
IC - Collector Current (A)
Fig. 11 - Typical Switching Losses vs. Collector Current
Revision: 26-Mar-12
0
400
800
1200
1600
2000
dIF/dt (A/µs)
Fig. 14 - Typical Stored Charge vs. dIF/dt
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240
250
VR = 720 V
TJ = 125 °C
TJ = 25 °C
IF = 200 A
IF = 100 A
IF = 50 A
200
IF = 200 A
IF = 100 A
IF = 50 A
160
IRRM (A)
trr (ns)
200
150
100
120
VR = 720 V
TJ = 125 °C
TJ = 25 °C
50
80
400
800
1600
1200
2000
0
400
800
dIF/dt (A/µs)
Fig. 16 - Typical Recovery Current vs. dIF/dt
L2
Gate voltage D.U.T.
+
10 % + VG
L
RG2
+
V
- CC
2000
dIF/dt (A/µs)
Fig. 15 - Typical Reverse Recovery Time vs. dIF/dt
L1
1600
1200
+ VG
D.U.T. voltage
and current
VCE
RG1
RG2
VCC
10 % IC
Ipk
90 % IC
IC
+ VG2
RG1
- VG2
td(on)
5 % VCE
tr
Eon =
L3
VCC = 60 % of BVCES
LS = L1 + L2 + L3
VGE = ± 15 V
Fig. 17a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr,
Irr, td(on), tr, td(off), tf
90 % VGE
Fig. 17c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
∫tI
trr
Qrr =
trr
id dt
dt
C
x
tx
10 % VCC
VCE
IC
t2
t1
IC
+ VGE
∫
t2
VCE IC dt
t1
90 % IC
10 % VCE
Vpk
IC
10 % Irr
VCC
Irr
5 % IC
td(off)
Diode recovery
waveforms
tf
t1 + 5 µs
Eoff =
∫ t1V
Vce
ic dt
CE IC dt
t4
Erec =
Diode reverse
recovery energy
t3
t1
D IC
dt
t4
t2
Fig. 17b - Test Waveforms for Circuit of Fig. 18a,
Defining Eoff, td(off), tf
Revision: 26-Mar-12
∫ t3V
Fig. 17d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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VG Gate signal
device under test
Current D.U.T.
Voltage in D.U.T.
Current in D1
t0
t1
t2
Fig. 17e - Macro Waveforms for Figure 18a‘s Test Circuit
L
1000 V
D.U.T.
VC*
50 V
RL =
0 - 480 V
6000 µF
100 V
480 V
4 x IC at 25 °C
* Driver same type as D.U.T.; VC = 80 % of VCE (max)
Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain rated Id
Fig. 18 - Clamped Inductive Load Test Circuit
Fig. 19 - Pulsed Collector Current Test Circuit
ORDERING INFORMATION TABLE
Device code
Revision: 26-Mar-12
VS-
G
A
100
T
S
120
U
PbF
1
2
3
4
5
6
7
8
9
1
-
Vishay Semiconductors product
2
-
Insulated gate bipolar transistor (IGBT)
3
-
Generation 4, IGBT silicon, DBC construction
4
-
Current rating (100 = 100 A)
5
-
Circuit configuration (T = Half-bridge)
6
-
Package indicator (INT-A-PAK)
7
-
Voltage rating (120 = 1200 V)
8
-
Speed/type (U = Ultrafast)
9
-
PbF = Lead (Pb)-free
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CIRCUIT CONFIGURATION
3
6
7
1
4
5
2
LINKS TO RELATED DOCUMENTS
Dimensions
Revision: 26-Mar-12
www.vishay.com/doc?95173
Document Number: 94428
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Outline Dimensions
Vishay Semiconductors
INT-A-PAK IGBT
Ø 6.5
(Ø 0.25)
80 (3.15)
23 (0.91)
14.3
(0.56)
23 (0.91)
5 (0.20)
2.8 x 0.8
(0.11 x 0.03)
14.5
(0.57)
2
3
5
1
4
35 (1.38)
7
6
17 (0.67)
29 (1.15)
28 (1.10)
9 (0.33)
30
(1.18)
7 (0.28)
DIMENSIONS in millimeters (inches)
66 (2.60)
3 screws M6 x 10
37 (1.44)
94 (3.70)
Document Number: 95173
Revision: 04-May-09
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12
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