VS-GA200SA60SP

GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC) • Very low internal inductance (5 nH typical) • Industry standard outline SOT-227 • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level PRODUCT SUMMARY VCES 600 V VCE(on) (typical) at 200 A, 25 °C 1.33 V IC at TC = 97 °C (1) 200 A BENEFITS • Designed for increased operating efficiency in power conversion: UPS, SMPS, TIG welding, induction heating Note (1) Maximum I RMS current admitted 100 A to do not exceed the maximum temperature of terminals • Easy to assemble and parallel • Direct mounting to heatsink • Plug-in compatible with other SOT-227 packages ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter breakdown voltage Continuous collector current TEST CONDITIONS VCES IC (1) MAX. UNITS 600 V TC = 25 °C 342 TC = 97 °C 200 400 400 Pulsed collector current ICM Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature See fig. 15 Clamped Inductive load current ILM VCC = 80 % (VCES), VGE = 20 V, L = 10 μH, Rg = 2.0 , See fig. 14 Gate to emitter voltage VGE ± 20 V 155 mJ V Reverse voltage avalanche energy EARV Repetitive rating; pulse width limited by maximum junction temperature RMS isolation voltage VISOL Any terminal to case, t = 1 minute 2500 TC = 25 °C 781 TC = 100 °C 312 Maximum power dissipation Operating junction and storage temperature range Mounting torque PD TJ, TStg A W - 55 to + 150 °C 12 (1.3) lbf in (N  m) 6-32 or M3 screw Note (1) Maximum I RMS current admitted 100 A to do not exceed the maximum temperature of terminals THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TYP. MAX. Junction to case RthJC - 0.16 Case to sink, flat, greased surface RthCS 0.05 - 30 - Weight of module Document Number: 94363 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com UNITS °C/W g www.vishay.com 1 GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL Collector to emitter breakdown voltage V(BR)CES Emitter to collector breakdown voltage V(BR)ECS (1) Temperature coeff. of breakdown voltage Collector to emitter saturation voltage Gate threshold voltage V(BR)CES/TJ VCE(on) VGE(th) Temperature coeff. of threshold voltage VGE(th)/TJ (2) Forward transconductance gfe Zero gate voltage collector current ICES Gate to emitter leakage current IGES TEST CONDITIONS MIN. TYP. MAX. VGE = 0 V, IC = 250 μA 600 - - VGE = 0 V, IC = 1.0 A 18 - - VGE = 0 V, IC = 1.0 mA - 0.62 - IC = 100 A - 1.10 1.3 IC = 200 A VGE = 15 V See fig. 2, 5 UNITS V V/°C - 1.33 - IC = 100 A, TJ = 150 °C - 1.02 - VCE = VGE, IC = 250 μA 3.0 - 6.0 - - 10 - mV/°C VCE = 100 V, IC = 100 A 90 150 - S VGE = 0 V, VCE = 600 V - - 1.0 VGE = 0 V, VCE = 10 V, TJ = 150 °C - - 10 VGE = ± 20 V - - ± 250 nA MIN. TYP. MAX. UNITS VCE = VGE, IC = 2 mA V mA Notes (1) Pulse width  80 μs; duty factor  0.1 % (2) Pulse width 5.0 μs, single shot SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Total gate charge (turn-on) Qg IC = 100 A - 770 1200 Gate emitter charge (turn-on) Qge VCC = 400 V - 100 150 Gate collector charge (turn-on) Qgc VGE = 15 V; See fig. 8 - 260 380 Turn-on delay time td(on) - 78 - - 56 - VCC = 480 V - 890 1300 tf VGE = 15 V - 390 580 Turn-on switching loss Eon Rg = 2.0  - 0.98 - Turn-off switching loss Eoff Energy losses include “tail” - 17.4 - - 18.4 25.5 TJ = 150 °C - 72 - tr IC = 100 A, VCC = 480 V - 60 - td(off) VGE = 15 V, Rg = 2.0  - 1500 - Rise time tr Turn-off delay time td(off) Fall time Total switching loss Ets Turn-on delay time td(on) Rise time Turn-off delay time TJ = 25 °C IC = 100 A See fig. 9, 10, 13 nC ns mJ ns Energy losses include “tail” - 660 - Total switching loss Ets See fig. 10, 11, 13 - 35.7 - mJ Internal emitter inductance LE Between lead, and center of the die contact - 5.0 - nH VGE = 0 V VCC = 30 V f = 1.0 MHz; See fig. 7 - 16 250 - - 1040 - - 190 - Fall time tf Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com pF Document Number: 94363 Revision: 22-Jul-10 GA200SA60SP Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A Vishay Semiconductors 250 For both: Triangular wave: Duty cycle: 50 % I TJ = 125 °C Tsink = 90 °C Clamp voltage: Gate drive as specified 80 % of rated Power dissipation = 140 W Load Current (A) 200 150 Square wave: 60 % of rated voltage 100 I 50 Ideal diodes 0 0.1 1 10 100 f - Frequency (kHz) 1000 TC - Case Temperature (°C) 160 TJ = 150 °C 100 TJ = 25 °C 10 VGE = 15 V 20 µs pulse width 1 0.5 1.0 1.5 2.0 140 120 DC 100 80 60 40 20 0 2.5 0 50 100 150 200 250 300 350 VCE - Collector to Emitter Voltage (V) Maximum DC Collector Current (A) Fig. 2 - Typical Output Characteristics Fig. 4 - Maximum Collector Current vs. Case Temperature VCE - Collector to Emitter Voltage (V) IC - Collector to Emitter Current (A) IC - Collector to Emitter Current (A) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of Fundamental) 1000 TJ = 150 °C TJ = 25 °C 100 VCC = 50 V 5 µs pulse width 10 5 6 7 3 VGE = 15 V 80 µs pulse width IC = 400 A 2 IC = 200 A IC = 100 A 1 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 VGE - Gate to Emitter Voltage (V) TJ - Junction Temperature (°C) Fig. 3 - Typical Transfer Characteristics Fig. 5 - Typical Collector to Emitter Voltage vs. Junction Temperature Document Number: 94363 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 GA200SA60SP Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A Vishay Semiconductors ZthJC - Thermal Response 1 0.1 D = 0.75 D = 0.50 D = 0.25 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.01 Single pulse (thermal resistance) 0.001 0.0001 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case 25 VGE = 0 V, f = 1 MHz Cies = Cge + Cgc, Cce shorted Cres = Cgc Coes = Cce + Cgc 24 000 Cies 18 000 Coes 12 000 6000 Cres Total Switching Losses (mJ) C - Capacitance (pF) 30 000 0 23 22 21 20 19 18 1 10 100 0 10 20 30 40 50 VCE - Collector to Emitter Voltage (V) Rg - Gate Resistance (Ω) Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage Fig. 9 - Typical Switching Losses vs. Gate Resistance 1000 20 VCC = 400 V IC = 100 A Total Switching Losses (mJ) VGE - Gate to Emitter Voltage (V) VCC = 480 V VGE = 15 V TJ = 25 °C IC = 200 A 24 16 12 8 4 0 0 200 400 600 800 RG = 2.0 Ω VGE = 15 V VCC = 480 V IC = 350 A 100 IC = 200 A IC = 100 A 10 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 QG - Total Gate Charge (nC) TJ - Junction Temperature (°C) Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage Fig. 10 - Typical Switching Losses vs. Junction Temperature www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94363 Revision: 22-Jul-10 GA200SA60SP Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A Vishay Semiconductors Total Switching Losses (mJ) 160 RG = 2.0 Ω TJ = 150 °C VCC = 480 V VGE = 15 V 120 L D.U.T. VC* 50 V 80 1000 V 1 2 40 * Driver same type as D.U.T.; VC = 80 % of VCE (max) 0 100 150 200 250 300 Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain rated Id 350 IC - Collector Current (A) Fig. 11 - Typical Switching Losses vs. Collector Current Fig. 13a - Clamped Inductive Load Test Circuit IC - Collector Current (A) 1000 VGE = 20 V TJ = 125 °C 100 RL = 0 V to 480 V 480 V 4 x IC at 25 °C 480 µF 960 V 10 Safe operating area 1 1 10 100 1000 VCE - Collector to Emitter Voltage (V) Fig. 12 - Turn-Off SOA Fig. 13b - Pulsed Collector Current Test Circuit IC L Driver* D.U.T. VC 50 V 1000 V 1 2 3 * Driver same type as D.U.T., VC = 480 V Fig. 14a - Switching Lost Test Circuit Document Number: 94363 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 GA200SA60SP Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A Vishay Semiconductors 1 2 90 % 10 % 3 VC 90 % td (off) 10 % 5% IC tf tr td (on) t = 5 µs Eoff Eon Ets = (Eon + Eoff) Fig. 14b - Switching Loss Waveforms ORDERING INFORMATION TABLE Device code G A 200 S A 60 S P 1 2 3 4 5 6 7 8 1 - Insulated Gate Bipolar Transistor (IGBT) 2 - Generation 4, IGBT silicon, DBC construction 3 - Current rating (200 = 200 A) 4 - Single switch, no diode 5 - SOT-227 6 - Voltage rating (60 = 600 V) 7 - Speed/type (S = Standard speed) 8 - None = Standard production P = Lead (Pb)-free www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94363 Revision: 22-Jul-10 GA200SA60SP Insulated Gate Bipolar Transistor Ultralow VCE(on), 342 A Vishay Semiconductors CIRCUIT CONFIGURATION 3 (C) Lead assignment E 2 (G) C 4 3 1 2 E G 1, 4 (E) N-channel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95036 Packaging information www.vishay.com/doc?95037 Document Number: 94363 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 7 Outline Dimensions Vishay Semiconductors SOT-227 DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Chamfer 2.00 (0.079) x 45° 4 x M4 nuts Ø 4.40 (0.173) Ø 4.20 (0.165) -A3 4 6.25 (0.246) 12.50 (0.492) 25.70 (1.012) 25.20 (0.992) -B- 1 2 R full 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) -C- 12.30 (0.484) 11.80 (0.464) 0.12 (0.005) Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter Document Number: 95036 Revision: 28-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000