VS-GB70LA60UF

VS-GB70LA60UF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 (Warp 2 Speed IGBT), 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • Low VCE(on) • FRED Pt® hyperfast rectifier • Fully isolated package SOT-227 • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Compliant to RoHS Directive 2002/95/EC BENEFITS PRODUCT SUMMARY VCES 600 V IC DC 70 A at 88 °C VCE(on) typical at 70 A, 25 °C 2.23 V IF DC 70 A at 86 °C • Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating • Easy to assemble and parallel • Direct mounting to heatsink • Plug-in compatible with other SOT-227 packages • Higher switching frequency up to 150 kHz • Lower conduction losses and switching losses • Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC TEST CONDITIONS MAX. UNITS 600 V TC = 25 °C 111 TC = 80 °C 76 Pulsed collector current ICM 120 Clamped inductive load current ILM 120 Diode continuous forward current IF TC = 25 °C 113 TC = 80 °C 75 Peak diode forward current IFM 200 Gate to emitter voltage VGE ± 20 Power dissipation, IGBT PD Power dissipation, diode RMS isolation voltage Revision: 01-Feb-12 PD VISOL TC = 25 °C 447 TC = 80 °C 250 TC = 25 °C 236 TC = 80 °C 132 Any terminal to case, t = 1 min 2500 A V W V Document Number: 93104 1 For technical questions, contact: DiodesAmericas@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB70LA60UF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Temperature coefficient of threshold voltage SYMBOL VBR(CES) VCE(on) VGE(th) VGE(th)/TJ Collector to emitter leakage current ICES Diode reverse breakdown voltage VBR TEST CONDITIONS MIN. TYP. MAX. VGE = 0 V, IC = 1 mA 600 - - VGE = 15 V, IC = 35 A - 1.69 1.88 VGE = 15 V, IC = 70 A - 2.23 2.44 VGE = 15 V, IC = 35 A, TJ = 125 °C - 2.07 2.31 VGE = 15 V, IC = 70 A, TJ = 125 °C - 2.89 3.21 VCE = VGE, IC = 500 μA 3 3.9 5 VCE = VGE, IC = 1 mA (25 °C to 125 °C) - -9 - VFM Diode reverse leakage current IRM Gate to emitter leakage current IGES V mV/°C VGE = 0 V, VCE = 600 V - 1 100 μA VGE = 0 V, VCE = 600 V, TJ = 125 °C - 0.07 2.0 mA V IR = 1 mA IC = 35 A, VGE = 0 V Diode forward voltage drop UNITS 600 - - - 1.8 2.33 IC = 70 A, VGE = 0 V - 2.13 2.71 IC = 35 A, VGE = 0 V, TJ = 125 °C - 1.35 1.81 IC = 70 A, VGE = 0 V, TJ = 125 °C - 1.7 2.32 V VR = VR rated - 0.1 50 μA TJ = 125 °C, VR = VR rated - 0.01 3 mA VGE = ± 20 V - - ± 200 nA MIN. TYP. MAX. UNITS - 320 - IC = 50 A, VCC = 400 V, VGE = 15 V - 42 - IC = 70 A, VCC = 360 V, VGE = 15 V, Rg = 5  L = 500 μH, TJ = 25 °C SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc - 110 - Turn-on switching loss Eon - 1.15 - Turn-off switching loss Eoff - 1.16 - Total switching loss Etot - 2.31 - Turn-on switching loss Eon - 1.27 - - 1.28 - - 2.55 - - 208 - - 69 - - 208 - - 100 - Turn-off switching loss Eoff Total switching loss Etot Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr IC = 70 A, VCC = 360 V, VGE = 15 V, Rg = 5  L = 500 μH, TJ = 125 °C Energy losses include tail and diode recovery (see fig. 18) td(off) tf nC mJ ns TJ = 150 °C, IC = 120 A, Rg = 22  Reverse bias safe operating area RBSOA Fullsquare VGE = 15 V to 0 V, VCC = 400 V, VP = 600 V Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Revision: 01-Feb-12 IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V, TJ = 125 °C 59 93 ns - 4 6 A - 118 279 nC - 130 159 ns - 11 13 A - 715 995 nC Document Number: 93104 2 For technical questions, contact: DiodesAmericas@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB70LA60UF www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS TJ, TStg - 40 - 150 °C - - 0.28 - - 0.53 - 0.05 - Mounting torque, 6-32 or M3 screw - - 1.3 Nm Weight - 30 - g Maximum junction and storage temperature range IGBT Thermal resistance, junction to case RthJC Diode RthCS 160 200 140 175 120 150 100 125 IC (A) Allowable Case Temperature (°C) Thermal resistance, case to sink per module 80 75 40 50 20 25 0 TJ = 25 °C 100 60 °C/W TJ = 125 °C 0 0 20 40 60 80 100 120 0 1 2 3 4 5 IC - Continuous Collector Current (A) VCE (V) Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature Fig. 3 - Typical IGBT Collector Current Characteristics 1 1000 100 0.1 ICES (mA) TJ = 125 °C IC (A) 10 1 0.01 0.001 0.1 TJ = 25 °C 0.01 1 10 100 1000 0.0001 100 200 300 400 500 600 VCE (V) VCES (V) Fig. 2 - IGBT Reverse Bias SOA TJ = 150 °C, VGE = 15 V Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current Revision: 01-Feb-12 Document Number: 93104 3 For technical questions, contact: DiodesAmericas@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB70LA60UF www.vishay.com Vishay Semiconductors 4.5 200 175 TJ = 25 °C 4.0 125 3.5 IF (A) Vgeth (V) 150 3.0 100 TJ = 125 °C 75 TJ = 125 °C 50 TJ = 25 °C 2.5 25 0 2.0 0.0002 0.0004 0.0006 0.0008 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IC (mA) VFM (V) Fig. 5 - Typical IGBT Threshold Voltage Fig. 8 - Typical Diode Forward Characteristics 4 1.50 1.25 100 A Energy (mJ) VCE (V) 3 70 A 2 1.00 0.75 0.50 Eoff 35 A 0.25 1 0.00 10 30 50 70 90 110 130 150 0 20 40 60 80 TJ (°C) IC (A) Fig. 6 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V Fig. 9 - Typical IGBT Energy Loss vs. IC TJ = 125 °C, L = 500 μH, VCC = 360 V, Rg = 5 , VGE = 15 V 1000 160 140 Switching Time (ns) Allowable Case Temperature (°C) Eon 120 100 80 60 40 td(off) td(on) tf 100 tr 20 0 10 0 20 40 60 80 100 120 0 10 20 30 40 50 60 70 80 IF - Continuous Forward Current (A) IC (A) Fig. 7 - Maximum DC Forward Current vs. Case Temperature Fig. 10 - Typical IGBT Switching Time vs. IC TJ = 125 °C, L = 500 μH, VCC = 360 V, Rg = 5 , VGE = 15 V Revision: 01-Feb-12 Document Number: 93104 4 For technical questions, contact: DiodesAmericas@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB70LA60UF www.vishay.com Vishay Semiconductors 170 30 25 145 TJ = 125 °C 20 Irr (A) trr (ns) 120 95 70 TJ = 125 °C 15 10 TJ = 25 °C 5 45 20 100 TJ = 25 °C 0 100 1000 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 11 - Typical trr Diode vs. dIF/dt VR = 200 V, IF = 50 A Fig. 12 - Typical Irr Diode vs. dIF/dt VRR = 200 V, IF = 50 A 1250 1050 TJ = 125 °C Qrr (nC) 850 650 450 TJ = 25 °C 250 50 100 1000 dIF/dt (A/µs) Fig. 13 - Typical Qrr Diode vs. dIF/dt VR = 200 V, IF = 50 A ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.01 0.001 0.00001 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.0001 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 14 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) Revision: 01-Feb-12 Document Number: 93104 5 For technical questions, contact: DiodesAmericas@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB70LA60UF www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 15 - Maximum Thermal Impedance ZthJC Characteristics (DIODE) R= L D.U.T. VCC ICM VC * 50 V 1000 V D.U.T. 1 2 + -V CC Rg * Driver same type as D.U.T.; VC = 80 % of Vce(max) * Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain Id Fig. 16 - Clamped Inductive Load Test Circuit Fig. 17 - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L - + -5V D.U.T./ driver + VCC Rg Fig. 18 - Switching Loss Test Circuit Revision: 01-Feb-12 Document Number: 93104 6 For technical questions, contact: DiodesAmericas@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB70LA60UF www.vishay.com Vishay Semiconductors 1 2 90 % 10 % 3 VC 90 % td(off) 10 % IC 5% tf tr td(on) t = 5 µs Eoff Eon Ets = (Eon + Eoff) Fig. 19 - Switching Loss Waveforms Test Circuit ORDERING INFORMATION TABLE Device code VS- G B 70 L A 60 U F 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Insulated Gate Bipolar Transistor (IGBT) 3 - B = IGBT Generation 5 4 - Current rating (70 = 70 A) 5 - Circuit configuration (L = Low Side Chopper) 6 - Package indicator (A = SOT-227) 7 - Voltage rating (60 = 600 V) 8 - Speed/type (U = Ultrafast IGBT) 9 - F = F/W FRED Pt® diode CIRCUIT CONFIGURATION 4 3 2 1 LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95036 Packaging information http://www.vishay.com/doc?95037 Revision: 01-Feb-12 Document Number: 93104 7 For technical questions, contact: DiodesAmericas@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors SOT-227 DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Chamfer 2.00 (0.079) x 45° 4 x M4 nuts Ø 4.40 (0.173) Ø 4.20 (0.165) -A3 4 6.25 (0.246) 12.50 (0.492) 25.70 (1.012) 25.20 (0.992) -B- 1 2 R full 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) -C- 12.30 (0.484) 11.80 (0.464) 0.12 (0.005) Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter Document Number: 95036 Revision: 28-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000