VS-GB75LP120N

VS-GB75LP120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V, 75 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery anti-parallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology INT-A-PAK • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRODUCT SUMMARY • AC inverter drives VCES 1200 V IC at TC = 80 °C 75 A VCE(on) (typical) at IC = 75 A, 25 °C 1.82 V Speed 8 kHz to 30 kHz Package INT-A-PAK Circuit Half bridge • Switching mode power supplies • Electronic welders DESCRIPTION Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as general inverters and UPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MAX. Collector to emitter voltage VCES 1200 Gate to emitter voltage VGES ± 20 Collector current Pulsed collector current TC = 25 °C IC ICM (1) Diode continuous forward current IF UNITS V 170 TC = 80 °C 75 tp = 1 ms 150 A 75 Diode maximum forward current IFM Maximum power dissipation PD TJ = 150 °C 658 W Short circuit withstand time tSC TJ = 125 °C 10 μs RMS isolation voltage 150 VISOL I2t-value, diode I2t Operating junction temperature range TJ f = 50 Hz, t = 1 min 2500 V VR= 0 V, t = 10 ms, TJ = 125 °C 1190 A2s -40 to +150 °C Note (1) Repetitive rating: pulse width limited by maximum junction temperature. IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES Collector to emitter voltage VCE(on) Gate to emitter threshold voltage TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 75 A, TJ = 25 °C - 1.82 - VGE = 15 V, IC = 75 A, TJ = 125 °C - 2.05 7.0 UNITS V VGE(th) VCE = VGE, IC = 3.0 mA, TJ = 25 °C 5.0 6.2 Collector cut-off current ICES VCE = VCES, VGE = 0 V, TJ = 25 °C - - 1.0 mA Gate to emitter leakage current IGES VGE = VGES, VCE = 0 V, TJ = 25 °C - - 400 nA Revision: 10-Jun-15 Document Number: 94825 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75LP120N www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS PARAMETER SYMBOL Turn-on delay time TEST CONDITIONS td(on) Rise time tr Turn-off delay time VCC = 600 V, IC = 75 A, Rg = 4.7 , VGE = ± 15 V, TJ = 25 °C td(off) Fall time tf MIN. TYP. MAX. - 140 - - 37 - - 370 - - 55 - Turn-on switching loss Eon - 7.2 - Turn-off switching loss Eoff - 4.5 - Turn-on delay time td(on) - 150 - tr - 40 - - 400 - Rise time Turn-off delay time VCC = 600 V, IC = 75 A, Rg = 4.7 , VGE = ± 15 V, TJ = 125 °C td(off) Fall time tf - 64 - Turn-on switching loss Eon - 9.0 - Turn-off switching loss Eoff - 7.4 - Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres SC data ISC VGE = 0 V, VCE = 25 V, f = 1.0 MHz tsc  10 μs, VGE = 15 V, TJ = 125 °C,  VCC = 900 V, VCEM  1200 V - 5.52 - - 0.40 - - 0.26 - - 420 - UNITS ns mJ ns mJ nF A Internal gate resistance Rgint - 3 -  Stray inductance LCE - - 30 nH - 0.75 - m UNITS Module lead resistance, terminal to chip RCC’+EE’ TC = 25 °C DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Diode forward voltage VF Diode reverse recovery charge trr Diode peak reverse recovery current Irr Diode reverse recovery energy TEST CONDITIONS IF = 75 A IF = 75 A, VR = 600 V, dIF/dt = -2000 A/μs, VGE = -15 V Erec MIN. TYP. MAX. TJ = 25 °C - 2.05 - TJ = 125 °C - 2.25 - TJ = 25 °C - 100 - TJ = 125 °C - 125 - TJ = 25 °C - 80 - TJ = 125 °C - 100 - TJ = 25 °C - 3.0 - TJ = 125 °C - 6.0 - V μC A mJ THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Operating junction temperature range Storage temperature range Junction to case Case to sink Mounting torque Weight of module IGBT (per 1/2 module) Diode (per 1/2 module) MIN. TYP. MAX. TJ TEST CONDITIONS -40 - 150 TSTG -40 - 125 RthJC RthCS Conductive grease applied - - 0.19 - - 0.48 - 0.05 - Power terminal screw: M5 2.5 to 5.0 Mounting screw: M6 3.0 to 6.0 150 UNITS °C K/W Nm g Revision: 10-Jun-15 Document Number: 94825 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75LP120N www.vishay.com 30 125 25 E on, Eoff (mJ) 150 25 °C 100 IC (A) Vishay Semiconductors 125 °C 75 50 VCC = 600 V IC = 75 A VGE = ± 15 V TJ = 125 °C Eon 20 15 10 Eoff 25 5 VGE = 15 V 0 0 0 0.5 1 1.5 2 2.5 0 3 10 20 30 40 50 60 70 Rg (Ω) VCE (V) Fig. 1 - Typical Output Characteristics Fig. 4 - Switching Loss vs. Gate Resistor 20 150 VCE = 20 V 15 VGE (V) 125 IC (A) 100 125 °C 75 VCC = 600 V 10 5 50 25 °C 25 IC = 75A TJ = 25 °C 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0 1 2 3 4 5 6 7 8 Qg (μC) 9 10 11 12 13 Fig. 5 - Gate Charge Characteristics VGE (V) Fig. 2 - Typical Transfer Characteristics 1 90 70 60 C (nF) Eon, Eoff (mJ) Cies VCC = 600 V Rg = 4.7 Ω VGE = ± 15 V TJ = 125 °C 80 Eon 50 0 Coes 40 30 Cres 20 Eoff 10 0.1 0 0 0 50 100 150 200 250 IC (A) Fig. 3 - Switching Loss vs. Collector Current 5 10 15 20 25 30 35 VCE (V) Fig. 6 - Typical Capacitance vs. Collector to Emitter Voltage Revision: 10-Jun-15 Document Number: 94825 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75LP120N www.vishay.com Vishay Semiconductors 103 104 VCC = 600 V IC = 75 A VGE = ± 15 V TJ = 125 °C td(off) t (ns) t (ns) td(off) 103 td(on) 102 tf 101 0 50 100 150 td(on) tr tf 102 tr VCC = 600 V Rg = 4.7 Ω VGE = ± 15 V TJ = 125 °C 101 0 200 10 20 30 40 IC (A) Rg (Ω) Fig. 7 - Typical Switching Time vs. IC Fig. 8 - Typical Switching Time vs. Gate Resistance Rg 300 250 25 °C IF (A) 200 150 125 °C 100 50 0 0 1 2 3 4 VF (V) Fig. 9 - Diode Typical Forward Characteristics 100 Diode IGBT ZthJC (K/W) 10-1 10-2 10-3 10-4 10-5 10-4 10-3 10-2 10-1 100 tp (s) Fig. 10 - Transient Thermal Impedance Revision: 10-Jun-15 Document Number: 94825 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75LP120N www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION 6 7 1 2 3 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95524 Revision: 10-Jun-15 Document Number: 94825 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors INT-A-PAK DIMENSIONS in millimeters (inches) Revision: 06-Aug-12 Document Number: 95524 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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