VS-GB75SA120UP

Not Available for New Designs, Use VS-GB90SA120U VS-GB75SA120UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A FEATURES • • • • • • • • SOT-227 PRODUCT SUMMARY BENEFITS VCES 1200 V IC DC 75 A at 95 °C VCE(on) typical at 75 A, 25 °C 3.3 V Package SOT-227 NPT Generation V IGBT technology Square RBSOA Positive VCE(on) temperature coefficient Fully isolated package Speed 8 kHz to 60 kHz Very low internal inductance ( 5 nH typical) Industry standard outline Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 • Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating • Easy to assemble and parallel • Direct mounting on heatsink • Plug-in compatible with other SOT-227 packages • Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC TEST CONDITIONS MAX. UNITS 1200 V TC = 25 °C 131 TC = 80 °C 89 A Pulsed collector current ICM 200 Clamped inductive load current ILM 200 Gate to emitter voltage VGE ± 20 Power dissipation PD Isolation voltage VISOL TC = 25 °C 658 TC = 80 °C 369 Any terminal to case, t = 1 min 2500 V W V ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Temperature coefficient of threshold voltage Collector to emitter leakage current Gate to emitter leakage current Revision: 26-Jul-13 SYMBOL VBR(CES) VCE(on) VGE(th) VGE(th)/TJ ICES IGES TEST CONDITIONS MIN. TYP. MAX. UNITS VGE = 0 V, IC = 250 μA 1200 - - VGE = 15 V, IC = 75 A - 3.3 3.8 VGE = 15 V, IC = 75 A, TJ = 125 °C - 3.6 3.9 VCE = VGE, IC = 250 μA 4 5 6 VCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 12 - mV/°C VGE = 0 V, VCE = 1200 V - 3 250 μA VGE = 0 V, VCE = 1200 V, TJ = 150 °C - 4 20 mA VGE = ± 20 V - - ± 200 nA V Document Number: 93124 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not Available for New Designs, Use VS-GB90SA120U VS-GB75SA120UP www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on delay time td(on) Rise time Turn-off delay time Fall time Reverse bias safe operating area TEST CONDITIONS IC = 50 A, VCC = 600 V, VGE = 15 V IC = 75 A, VCC = 600 V, VGE = 15 V, Rg = 5  L = 500 μH MIN. TYP. MAX. - 690 - - 65 - - 250 - - 1.53 - - 1.76 - - 3.29 - - 2.49 - - 3.45 - - 5.94 - - 281 - - 45 - - 300 - - 126 - UNITS nC mJ IC = 75 A, VCC = 600 V, VGE = 15 V, Rg = 5   L = 500 μH, TJ = 125 °C tr Energy losses include tail and diode recovery (see fig. 18) ns td(off) tf RBSOA TJ = 150 °C, IC = 200 A, Rg = 22  VGE = 15 V to 0 V, VCC = 900 V, VP = 1200 V, L = 500 μH Fullsquare THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. TJ, TSTG - 40 - 150 Thermal resistance, junction to case RthJC - - 0.19 Thermal resistance case to heatsink RthCS - 0.05 - Weight - 30 - g Mounting torque - - 1.3 Nm Junction and storage temperaure range Case style Revision: 26-Jul-13 Flat, greased surface UNITS °C/W SOT-227 Document Number: 93124 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not Available for New Designs, Use VS-GB90SA120U VS-GB75SA120UP Vishay Semiconductors 160 10 140 TJ = 125 °C 1 120 100 ICES (mA) Allowable Case Temperature (°C) www.vishay.com 80 60 0.1 0.01 40 TJ = 25 °C 0.001 20 0.0001 0 0 20 40 60 80 100 120 140 IC - Continuous Collector Current (A) 93124_01 0 200 400 600 800 1000 1200 VCES (V) 93124_04 Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature 6.0 1000 5.5 100 TJ = 25 °C IC (A) Vgeth (V) 5.0 10 4.5 TJ = 125 °C 4.0 3.5 1 10 100 1000 VCE (V) 93124_02 3.0 0.0002 10 000 0.0004 0.0006 0.0008 0.001 IC (mA) 93124_05 Fig. 5 - Typical IGBT Threshold Voltage Fig. 2 - IGBT Reverse Bias SOA TJ = 150 °C, VGE = 15 V 4.5 200 100 A 4.0 150 75 A VCE (V) IC (A) TJ = 25 °C 100 3.5 3.0 TJ = 125 °C 50 27 A 2.5 2.0 0 0 1 93124_03 2 3 4 5 6 VCE (V) Fig. 3 - Typical IGBT Collector Current Characteristics Revision: 26-Jul-13 25 93124_06 50 75 100 125 150 TJ (°C) Fig. 6 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V Document Number: 93124 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not Available for New Designs, Use VS-GB90SA120U VS-GB75SA120UP www.vishay.com Vishay Semiconductors 4.0 14 3.5 12 Eon 10 Energy (mJ) Energy (mJ) 3.0 2.5 Eoff 2.0 1.5 Eon 8 Eoff 6 4 1.0 2 0.5 0 0 10 20 30 40 50 60 70 80 0 IC (A) 93124_07 20 30 40 50 RG (Ω) 93124_09 Fig. 7 - Typical IGBT Energy Loss vs. IC TJ = 125 °C, L = 500 μH, VCC = 600 V, Rg = 5 , VGE = 15 V Fig. 9 - Typical IGBT Energy Loss vs. Rg TJ = 125 °C, IC = 75 A, L = 500 μH, VCC = 600 V, VGE = 15 V 1000 10 000 td(off) Switching Time (μs) Switching Time (μs) 10 td(on) tf 100 tr 10 td(on) 1000 td(off) tf 100 tr 10 0 20 40 60 80 0 IC (A) 93124_08 10 20 Fig. 8 - Typical IGBT Switching Time vs. IC TJ = 125 °C, L = 500 μH, VCC = 600 V, Rg = 5 , VGE = 15 V 30 40 50 RG (Ω) 93124_10 Fig. 10 - Typical IGBT Switching Time vs. Rg TJ = 125 °C, L = 500 μH, VCC = 600 V, Rg = 5 , VGE = 15 V ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.01 0.001 0.0001 0.00001 93124_11 Single pulse (thermal response) 0.0001 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 0.01 0.1 1 Rectangular Pulse Duration (t1) Fig. 11 - Maximum Thermal Impedance ZthJC Characteristics Revision: 26-Jul-13 Document Number: 93124 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not Available for New Designs, Use VS-GB90SA120U VS-GB75SA120UP www.vishay.com Vishay Semiconductors R= L D.U.T. VCC ICM VC * 50 V 1000 V D.U.T. 1 2 + -V CC Rg * Driver same type as D.U.T.; VC = 80 % of Vce(max) * Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain Id Fig. 12 - Clamped Inductive Load Test Circuit Fig. 13 - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L - + -5V + VCC D.U.T./ driver Rg Fig. 14 - Switching Loss Test Circuit 1 2 90 % 10 % 3 VC 90 % td(off) 10 % IC 5% tf tr td(on) t = 5 µs Eoff Eon Ets = (Eon + Eoff) Fig. 15 - Switching Loss Waveforms Test Circuit Revision: 26-Jul-13 Document Number: 93124 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not Available for New Designs, Use VS-GB90SA120U VS-GB75SA120UP www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- G B 75 S A 120 U P 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Insulated Gate Bipolar Transistor (IGBT) 3 - B = IGBT Generation 5 4 - Current rating (75 = 75 A) 5 - Circuit configuration (S = Single switch without antiparallel diode) 6 - Package indicator (A = SOT-227) 7 - Voltage rating (120 = 1200 V) 8 - Speed/type (U = Ultrafast IGBT) 9 - Totally lead (Pb)-free CIRCUIT CONFIGURATION 3 (C) 2 (G) 1, 4 (E) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95036 Packaging information www.vishay.com/doc?95037 Revision: 26-Jul-13 Document Number: 93124 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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