VS-GBPC3512A

VS-GBPC.. Series www.vishay.com Vishay Semiconductors Single Phase Bridge Rectifier, 25 A, 35 A FEATURES GBPC...A • Universal, 3 way terminals: push-on, wrap around or solder • High thermal conductivity package, electrically insulated case • Positive polarity symbol molded on the plastic case • Center hole fixing • Glass passivated diode chips • Excellent power/volume ratio • Nickel plated terminals solderable using lead (Pb)-free solder; Solder Alloy Sn/Ag/Cu (SAC305); Solder temperature 260 °C to 275 °C • Wire lead version available • UL E300359 approved • Designed and qualified for industrial and consumer level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 GBPC...W PRIMARY CHARACTERISTICS IO 25 A, 35 A VRRM 200 V to 1200 V Package GBPC...A, GBPC...W Circuit configuration Single phase bridge DESCRIPTION / APPLICATIONS A range of extremely compact, encapsulated single phase bridge rectifiers offering efficient and reliable operation. They are intended for use in general purpose and instrumentation applications. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IO IFSM I2t VRRM VALUES GBPC25 VALUES GBPC35 UNITS 25 35 A °C TC 60 55 50 Hz 400 475 60 Hz 420 500 50 Hz 790 1130 60 Hz 725 1030 Range TJ A A2s 200 to 1200 V -55 to +150 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-GBPC25..A (1) VS-GBPC35..A (1) VS-GBPC25..W VS-GBPC35..W VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK AC REVERSE VOLTAGE TJ = TJ MAXIMUM V VRSM, MAXIMUM NON-REPETITIVE PEAK AC REVERSE VOLTAGE TJ = TJ MAXIMUM V 02 200 275 04 400 500 06 600 725 08 800 900 10 1000 1100 12 1200 1300 IRRM MAXIMUM AT RATED VRRM TJ = TJ MAXIMUM mA IRRM MAXIMUM DC REVERSE CURRENT AT TJ = 125 °C μA 2 500 Note (1) See Ordering Information table at the end of datasheet Revision: 10-Oct-2018 Document Number: 93575 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GBPC.. Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION CONDUCTION PARAMETER SYMBOL Maximum DC output current  at case temperature IO Maximum peak, one-cycle non-repetitive forward current 25 35 Capacitive load 20 28 60 55 t = 10 ms 400 475 t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t Maximum I2t for fusing I2t VALUES GBPC35 Resistive or inductive load t = 8.3 ms IFSM VALUES GBPC25 TEST CONDITIONS t = 10 ms t = 8.3 ms No voltage reapplied 100 % VRRM reapplied Initial TJ = TJ maximum No voltage reapplied 100 % VRRM reapplied 420 500 335 400 350 420 790 1130 725 1030 560 800 512 730 I2t for time tx = I2t x tx; 0.1  tx  10 ms, VRRM = 0 V 7.9 11.3 Low level of threshold voltage VF(TO)1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ maximum 0.76 0.77 High level of threshold voltage VF(TO)2 (I >  x IF(AV)), TJ maximum 0.89 0.92 Low level forward slope resistance rt1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ maximum 8.2 4.852 High level forward slope resistance rt2 (I >  x IF(AV)), TJ maximum 6.8 3.867 Maximum forward voltage drop VFM TJ = 25 °C, IFM = IFavg (arm) 1.1 Maximum DC reverse current IRRM TJ = 25 °C, per diode at VRRM RMS isolation voltage base plate VINS f = 50 Hz, t = 1 s UNITS A °C A A2s kA2s V m 1.1 V 5.0 μA 2700 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction and storage temperature range VALUES GBPC25 TEST CONDITIONS TJ, TStg RthJC DC operation Maximum thermal resistance,  case to heatsink RthCS Mounting surface, smooth, flat and greased 1.7 Instantaneous Forward Current (A) Maximum Allowable Case Temperature (°C) Bridge to heatsink 150 GBPC25.. Series 130 120 110 180 ° (Rect) 100 90 180 ° (Sine) 60 50 0 5 10 1.4 K/W Mounting torque ± 10 % 70 °C 0.2 Approximate weight 80 UNITS -55 to +150 Maximum thermal resistance,  junction to case per bridge 140 VALUES GBPC35 15 20 25 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics 30 16 g 2.0 N·m (lbf · in) 1000 100 TJ = 25 °C TJ = 150 °C 10 GBPC25.. Series 1 0.5 1 1.5 2 2.5 Instantaneous Forward Voltage (V) Fig. 2 - Forward Voltage Drop Characteristics Revision: 10-Oct-2018 Document Number: 93575 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GBPC.. Series Maximum Average Forward Power Loss (W) www.vishay.com Vishay Semiconductors 50 R 180° (Sine) 180° (Rect) 40 thS A =0 .7 K /W 1K /W -D elta R 2 K/ W 30 3 K/ W 20 GBPC25.. Series T J = 150 °C 10 0 0 5 10 15 20 Average Forward Current (A) 25 50 75 100 Maximum Allowable Ambient Temperature °C 400 At any rated load condition and with rated VRRM applied following surge Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 350 300 250 200 150 GBPC25.. Series 100 1 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Maximum Allowable Case Temperature (°C) Peak Half Sine Wave Forward Current (A) Fig. 3 - Total Power Loss Characteristics 150 140 GBPC35.. Series 130 120 110 100 180 ° (Rect) 90 80 70 180 ° (Sine) 60 50 40 0 Maximum non repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated V RRM reapplied 350 300 250 200 150 100 GBPC25.. Series 50 0.01 0.1 1 Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current 20 30 40 Fig. 6 - Current Ratings Characteristics Instantaneous Forward Current (A) Peak Half Sine Wave Forward Current (A) Fig. 4 - Maximum Non-Repetitive Surge Current 400 10 Average Forward Current (A) 1000 100 TJ = 25 °C TJ = 150 °C 10 GBPC35.. Series 1 0.5 1 1.5 2 2.5 3 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Revision: 10-Oct-2018 Document Number: 93575 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GBPC.. Series Maximum Average Forward Power Loss (W) www.vishay.com Vishay Semiconductors 80 R thS A 180° (Sine) 180° (Rect) 70 60 0.7 =0 .5 50 1K /W 40 2 K/ W 30 3 K/W K/W -D elta K/W R 20 GBPC35.. Series TJ = 150 °C 10 0 0 5 10 15 20 25 30 Average Forward Current (A) 35 50 75 100 Maximum Allowable Ambient Temperature °C 450 At any rated load condition and with rated Vrrm applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 400 350 300 250 200 150 GBPC35.. Series 100 1 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Transient Thermal Impedance Z thJC (K/W) Peak Half Sine Wave Forward Current (A) Fig. 8 - Total Power Loss Characteristics 500 450 400 Maximum non repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied rated Vrrm reapplied 350 300 250 200 150 100 0.01 GBPC35.. Series 0.1 1 Pulse Train Duration (s) Fig. 10 - Maximum Non-Repetitive Surge Current Steady state value R thJC = 1.7 K/W (DC operation) 1 0.1 0.01 GBPC25.. Series 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 11 - Thermal Impedance ZthJC Characteristic Transient Thermal Impedance Z thJC (K/W) Peak Half Sine Wave Forward Current (A) Fig. 9 - Maximum Non-Repetitive Surge Current 10 10 Steady state value R thJC = 1.4 K/W (DC Operation) 1 0.1 0.01 GBPC35.. Series 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 12 - Thermal Impedance ZthJC Characteristic Revision: 10-Oct-2018 Document Number: 93575 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GBPC.. Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- GBPC 35 1 2 3 12 A 4 5 1 - Vishay Semiconductors product 2 - Circuit configuration: Single phase bridge coding 25 = 25 A (average) 35 = 35 A (average) 3 - Current rating code 4 - Voltage code x 100 = VRRM 5 - Diode bridge rectifier: A = standard fast-on terminal W = wire lead CIRCUIT CONFIGURATION (+) D1 D3 D4 D2 AC1 AC2 (-) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95331 Revision: 10-Oct-2018 Document Number: 93575 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors GBPC DIMENSIONS FOR GBPC...A in millimeters 6.35 ± 0.03 (4 x) 0.8 ± 0.1 Ø 2.4 19 ± 1 7.6 ± 0.2 28.6 ± 0.1 17.9 ± 0.2 AC2 28.6 ± 0.1 14.2 ± 0.2 16.4 ± 0.2 AC1 Ø 5.3 16.4 ± 0.2 DIMENSIONS FOR GBPC...W in millimeters 1.0 (4 x) 33 ± 1 7.6 ± 0.2 28.6 ± 0.1 17.9 ± 0.2 5.3 ± 0.2 AC2 17.9 ± 0.2 Ø 5.3 28.6 ± 0.1 AC1 11.4 ± 0.2 12.2 ± 0.2 Revision: 27-May-15 Document Number: 95331 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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