VS-GP100TS60SFPbF
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Vishay Semiconductors
“Half Bridge” IGBT INT-A-PAK, (Trench PT IGBT), 100 A
Proprietary Vishay IGBT Silicon “L Series”
FEATURES
• Trench PT IGBT technology
• FRED Pt® anti-parallel diodes with fast recovery
• Very low conduction losses
• Al2O3 DBC
• UL pending
• Designed for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
INT-A-PAK
BENEFITS
PRIMARY CHARACTERISTICS
VCES
• Optimized for high current inverter stages (AC TIG welding
machines)
600 V
IC DC, TC = 130 °C
100 A
VCE(on) at 100 A, 25 °C
1.16 V
• Direct mounting to heatsink
Speed
DC to 1 kHz
• Very low junction to case thermal resistance
Package
INT-A-PAK
• Low EMI
Circuit configuration
Half bridge
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
SYMBOL
TEST CONDITIONS
MAX.
UNITS
600
V
VCES
IC
TC = 25 °C
337
TC = 80 °C
235
ICM
Peak switching current
ILM
440
Gate to emitter voltage
VGE
± 20
RMS isolation voltage
VISOL
Maximum power dissipation
Operating junction temperature range
Storage temperature range
PD
A
440
Any terminal to case, t = 1 min
2500
TC = 25 °C
781
TC = 100 °C
312
V
W
TJ
-40 to +150
TStg
-40 to +125
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Temperature coefficient of threshold voltage
SYMBOL
MIN.
TYP.
MAX.
VBR(CES)
VGE = 0 V, IC = 500 μA
600
-
-
VGE = 15 V, IC = 100 A
-
1.16
1.34
VCE(on)
VGE = 15 V, IC = 200 A
-
1.37
-
VGE = 15 V, IC = 100 A, TJ = 125 °C
-
1.08
-
VGE(th)
ΔVGE(th)/ΔTJ
TEST CONDITIONS
VCE = VGE, IC = 3.2 mA
4.9
5.8
8.8
VCE = VGE, IC = 3.2 mA, (25 °C to 125 °C)
-
-27
UNITS
V
-
mV/°C
Forward transconductance
gfe
VCE = 20 V, IC = 50 A
-
93
-
S
Transfer characteristics
VGE
VCE = 20 V, IC = 100 A
-
10.2
-
V
VGE = 0 V, VCE = 600 V
-
1.0
150
VGE = 0 V, VCE = 600 V, TJ = 125 °C
-
300
-
Collector to emitter leakage current
ICES
Diode forward voltage drop
VFM
Gate to emitter leakage current
IGES
IC = 100 A, VGE = 0 V
-
1.36
1.96
IC = 100 A, VGE = 0 V, TJ = 125 °C
-
1.17
-
VGE = ± 20 V
-
-
± 500
μA
V
nA
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SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Total gate charge
Qg
Gate to emitter charge
Qge
Gate to collector charge
Qgc
TEST CONDITIONS
IC = 100 A,
VCC = 400 V
MIN.
TYP.
MAX.
-
942
-
-
295
-
-
802
-
Turn-on switching energy
Eon
-
1.0
-
Turn-off switching energy
Eoff
-
7.9
-
Total switching energy
Ets
-
8.9
-
-
242
-
-
66
-
-
453
-
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
IC = 100 A,
VCC = 300 V,
VGE = 15 V, L = 500 μH
Rg = 3.3 Ω,
TJ = 25 °C
tf
-
460
-
Turn-on switching energy
Eon
-
2.0
-
Turn-off switching energy
Eoff
-
15.3
-
Total switching energy
Ets
-
17.3
-
-
257
-
-
68
-
-
716
-
-
868
-
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
IC = 100 A,
VCC = 300 V,
VGE = 15 V, L = 500 μH
Rg = 3.3 Ω,
TJ = 125 °C
tf
Reverse bias safe operating area
RBSOA
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
TJ = 150°C, IC = 440 A, VCC = 300 V,
Vp = 600 V, Rg = 3.3 Ω,
VGE = 15 V to 0 V, L = 500 μH
IF = 50 A,
dIF/dt = 200 A/μs,
Vrr = 200 V
UNITS
nC
mJ
ns
mJ
ns
Fullsquare
-
115
-
-
11
-
ns
A
-
638
-
nC
ns
-
210
-
-
21.4
-
A
-
2251
-
nC
SYMBOL
MIN.
TYP.
MAX.
UNITS
TJ
-40
-
150
TStg
-40
-
125
IF = 50 A,
dIF/dt = 200 A/μs,
Vrr = 200 V, TJ = 125 °C
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Operating junction temperature range
Storage temperature range
Junction to case
per switch
per diode
Case to sink per module
Mounting torque
±10 %
Weight
RthJC
RthCS
to heatsink
busbar
-
-
0.16
-
-
0.48
-
0.1
-
A mounting compound is
recommended and the torque should
be rechecked after a period of 3 hours
to allow the spread of the compound
4 to 6
-
185
°C
°C/W
Nm
-
g
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VS-GP100TS60SFPbF
Vishay Semiconductors
160
200
140
180
VGE = 12 V
VGE = 15 V
VGE = 18 V
160
120
140
100
120
DC
IC (A)
Allowable Case Temperature (°C)
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80
60
VGE = 9 V
100
80
60
40
40
20
20
0
0
0
50
100
150
200
250
300
350
400
0
0.2
0.4
0.6
IC - Continuous Collector Current (A)
0.8
1.0
1.2
1.4
1.6
1.8
VCE (V)
Fig. 1 - Maximum IGBT Continuous Collector Current vs.
Case Temperature
Fig. 4 - Typical IGBT Output Characteristics, TJ = 125 °C
1.6
1000
1.5
200 A
1.4
100
VCE (V)
IC (A)
1.3
10
1.2
100 A
1.1
1.0
1
50 A
0.9
0.8
0.1
0.7
1
10
100
1000
20
40
60
80
100
120
140
160
TJ (°C)
VCE (V)
Fig. 2 - IGBT Reverse BIAS SOA TJ = 150 °C, VGE = 15 V
Fig. 5 - Collector to Emitter Voltage vs. Junction Temperature
300
100
VCE = 20 V
250
80
200
TJ = 125 °C
IC (A)
IC (A)
60
150
40
100
50
TJ = 25 °C
TJ = 25 °C
TJ = 150 °C
20
TJ = 125 °C
0
0
0.3
0.6
0.9
1.2
1.5
0
1.8
2.1
VCE (V)
Fig. 3 - Typical IGBT Output Characteristics, VGE = 15 V
3
4
5
6
7
8
9
10
11
12
VGE (V)
Fig. 6 - Typical IGBT Transfer Characteristics
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160
18.0
16.0
Allowable Case Temperature (°C)
VCC = 400 V
IC = 100 A
14.0
VGE (V)
12.0
10.0
8.0
6.0
4.0
2.0
0
0
200
400
600
800
1000
140
120
100
DC
80
60
40
20
0
0
1200
40
60
80
100
Fig. 7 - Typical Total Gate Charge vs. Gate to Emitter Voltage
140
160
Fig. 10 - Maximum Diode Continuous Forward Current
vs. Case Temperature
200
7.5
180
6.5
160
TJ = 25 °C
5.5
TJ = 150 °C
140
120
3.5
IF (A)
4.5
TJ = 125 °C
TJ = 125 °C
100
80
60
2.5
TJ = 25 °C
40
1.5
20
0.5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
4.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
IC (mA)
VFM (V)
Fig. 8 - Typical IGBT Gate Threshold Voltage
Fig. 11 - Typical Diode Forward Characteristics
25
10
TJ = 150 °C
1
20
0.1
TJ = 125 °C
Energy (mJ)
ICES (mA)
120
IF - Continuous Forward Current (A)
Qg (nC)
VGEth (V)
20
0.01
0.001
15
Eoff
10
TJ = 25 °C
5
0.0001
Eon
0
0.00001
100
200
300
400
500
600
VCES (V)
Fig. 9 - Typical IGBT Zero Gate Voltage Collector Current
0
20
40
60
80
100
120
140
160
IC (A)
Fig. 12 - Typical IGBT Energy Loss vs. IC
TJ = 125 °C, VCC = 300 V, Rg = 3.3 Ω, VGE = 15 V, L = 500 μH
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10000
280
260
1000
220
TJ = 125 °C
200
trr (ns)
Switching Time (ns)
240
tf
td(off)
td(on)
180
160
140
100
120
tr
TJ = 25 °C
100
80
60
10
0
20
40
60
80
100
120
140
160
100
300
400
500
IC (A)
dIF/dt (A/μs)
Fig. 13 - Typical IGBT Switching Time vs. IC
TJ = 125 °C, VCC = 300 V, Rg = 3.3 Ω, VGE = 15 V, L = 500 μH
Fig. 16 - Typical Diode Reverse Recovery Time vs. dIF/dt
Vrr = 200 V, IF = 50 A
20
40
18
35
Eoff
16
30
14
TJ = 125 °C
12
Irr (A)
Energy (mJ)
200
10
8
25
20
TJ = 25 °C
6
15
Eon
4
10
2
0
5
0
5
10
15
20
25
30
100
200
300
400
500
Rg (Ω)
dIF/dt (A/μs)
Fig. 14 - Typical IGBT Energy Loss vs. Rg
TJ = 125 °C, VCC = 300 V, IC = 100 A, VGE = 15 V, L = 500 μH
Fig. 17 - Typical Diode Reverse Recovery Current vs. dIF/dt
Vrr = 200 V, IF = 50 A
10 000
3300
3000
TJ = 125 °C
2400
tf
1000
Qrr (nC)
Switching Time (ns)
2700
td(off)
td(on)
100
2100
1800
1500
1200
tr
TJ = 25 °C
900
600
10
300
0
5
10
15
20
25
30
Rg (Ω)
Fig. 15 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, VCC = 300 V, IC = 100 A, VGE = 15 V, L = 500 μH
100
200
300
400
500
dIF/dt (A/μs)
Fig. 18 - Typical Diode Reverse Recovery Charge vs. dIF/dt)
Vrr = 200 V, IF = 50 A
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ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 19 - Maximum Thermal Impedance ZthJC Characteristics - (IGBT)
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
t1 - Rectangular Pulse Duration (s)
Fig. 20 - Maximum Thermal Impedance ZthJC Characteristics - (Diode))
ORDERING INFORMATION TABLE
Device code
VS-
GP
100
T
S
60
S
F
PbF
1
2
3
4
5
6
7
8
9
1
-
Vishay Semiconductors product
2
-
IGBT die technology (GP = trench PT)
3
4
-
Current rating (100 = 100 A)
5
-
Circuit configuration (T = half bridge)
Package indicator (S = INT-A-PAK)
6
-
Voltage code (60 = 600 V)
7
-
Speed/type (S = standard speed IGBT)
8
-
Diode type
9
-
None = standard production; PbF = Lead (Pb)-free
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CIRCUIT CONFIGURATION
3
6
7
1
4
5
2
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95173
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Outline Dimensions
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Vishay Semiconductors
INT-A-PAK IGBT
Ø 6.5
(Ø 0.25)
80 (3.15)
23 (0.91)
14.3
(0.56)
23 (0.91)
5 (0.20)
2.8 x 0.8
(0.11 x 0.03)
14.5
(0.57)
2
3
5
1
66 (2.60)
3 screws M6 x 10
4
35 (1.38)
7
6
17 (0.67)
29 (1.15)
28 (1.10)
9 (0.33)
30
(1.18)
7 (0.28)
DIMENSIONS in millimeters (inches)
37 (1.44)
94 (3.70)
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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