VS-GP300TD60S

VS-GP300TD60S www.vishay.com Vishay Semiconductors Dual INT-A-PAK Low Profile “Half Bridge” (Trench PT IGBT), 300 A Proprietary Vishay IGBT Silicon “L Series” FEATURES • Trench PT IGBT technology • Low VCE(on) • Square RBSOA • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics • Industry standard package • Al2O3 DBC • UL approved file E78996 Dual INT-A-PAK Low Profile • Designed for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS VCES 600 V BENEFITS IC DC at TC = 104 °C 300 A • Increased operating efficiency VCE(on) (typical) at 300 A, 25 °C 1.30 V Speed DC to 1 kHz • Performance optimized as output inverter stage for TIG welding machines Package Dual INT-A-PAK low profile Circuit configuration Half bridge • Direct mounting on heatsink • Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage SYMBOL TEST CONDITIONS VCES TC = 25 °C MAX. UNITS 600 V 580 Continuous collector current IC (1) Pulsed collector current ICM 800 Clamped inductive load current ILM 800 Diode continuous forward current Gate to emitter voltage Maximum power dissipation (IGBT) RMS isolation voltage Operating junction and storage temperature range IF TC = 80 °C TC = 25 °C 219 TC = 80 °C 145 TC = 25 °C 1136 TC = 80 °C 636 VGE PD VISOL TJ, TStg 400 ± 20 Any terminal to case (VRMS t = 1 s, TJ = 25 °C) A V W 3500 V -40 to +150 °C Note (1) Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals Revision: 11-Dec-17 Document Number: 95767 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GP300TD60S www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage SYMBOL VBR(CES) VCE(on) MIN. TYP. MAX. VGE = 0 V, IC = 500 μA TEST CONDITIONS 600 - - VGE = 15 V, IC = 150 A - 1.12 1.21 VGE = 15 V, IC = 300 A - 1.30 1.45 VGE = 15 V, IC = 150 A, TJ = 125 °C - 1.03 - VGE = 15 V, IC = 300 A, TJ = 125 °C - 1.26 - V 4.9 6.0 8.8 VCE = VGE, IC = 6.4 mA, TJ = 125 °C - 3.4 - Temperature coefficient of threshold voltage VGE(th)/T VCE = VGE, IC = 6.4 mA, (25 °C to 125 °C) - -26 - mV/°C Forward transconductance gfe VCE = 20 V, IC = 50 A - 67 - S Transfer characteristics VGE VCE = 20 V, IC = 300 A - 11.4 - V VGE = 0 V, VCE = 600 V - 4.0 150 VGE = 0 V, VCE = 600 V, TJ = 125 °C - 100 - IFM = 150 A - 1.31 1.41 IFM = 300 A - 1.56 1.75 IFM = 150 A, TJ = 125 °C - 1.28 - IFM = 300 A, TJ = 125 °C - 1.63 - VGE = ± 20 V - - ± 500 nA UNITS Gate threshold voltage Collector to emitter leakage current VGE(th) ICES Diode forward voltage drop VFM Gate to emitter leakage current IGES VCE = VGE, IC = 6.4 mA UNITS μA V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Turn-on switching energy SYMBOL MIN. TYP. MAX. Eon TEST CONDITIONS - 6.0 - Turn-off switching energy Eoff - 33 - Total switching energy Etot - 39 - Turn-on delay time td(on) - 503 - - 214 - td(off) - 600 - Rise time Turn-off delay time Fall time tr IC = 300 A, VCC = 300 V, VGE = 15 V, Rg = 1.5 , L = 500 μH, TJ = 25 °C tf - 547 Turn-on switching loss Eon - 7.2 - Turn-off switching loss Eoff - 55.2 - Total switching loss Etot - 62.4 - Turn-on delay time td(on) - 476 - - 209 - - 807 - - 918 - Rise time Turn-off delay time Fall time Reverse bias safe operating area tr IC = 300 A, VCC = 300 V, VGE = 15 V, Rg = 1.5 , L = 500 μH, TJ = 125 °C td(off) tf RBSOA Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr TJ = 150 °C, IC = 800 A, VCC = 300 V VP = 600 V, Rg = 1.5 VGE = 15 V to 0 V, L = 500 μH IF = 300 A, Rg = 1.5 , VCC = 300 V, TJ = 25 °C IF = 300 A, Rg = 1.5 , VCC = 300 V, TJ = 125 °C mJ ns mJ ns Fullsquare - 119 - ns - 99 - A - 7.3 - μC - 165 - ns - 127 - A - 13 - μC Revision: 11-Dec-17 Document Number: 95767 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GP300TD60S www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS TJ, TStg -40 - 150 °C - - 0.11 - - 0.4 - 0.05 - case to heatsink: M6 screw 4 - 6 case to terminal 1, 2, 3: M5 screw 2 - 5 - 270 - Operating junction and storage temperature range IGBT Junction to case per leg RthJC diode Case to sink per module RthCS Mounting torque Weight Nm g 600 160 140 VGE = 12 V VGE = 15 V VGE = 18 V 500 120 400 100 DC IC (A) Allowable Case Temperature (°C) °C/W 80 60 VGE = 9 V 300 200 40 100 20 0 0 0 100 200 300 400 500 600 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 700 IC - Continuous Collector Current (A) VCE (V) Fig. 1 - Maximum IGBT Continuous Collector Current vs. Case Temperature Fig. 3 - Typical IGBT Output Characteristics, TJ = 125 °C 1.6 600 1.5 500 400 A 1.4 300 A 1.3 VCE (V) IC (A) 400 300 200 1.2 1.1 1.0 TJ = 25 °C TJ = 150 °C 100 A 0.9 100 0.8 TJ = 125 °C 0 0.7 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 20 40 60 80 100 120 140 160 VCE (V) TJ (°C) Fig. 2 - Typical IGBT Output Characteristics, VGE = 15 V Fig. 4 - Collector to Emitter Voltage vs. Junction Temperature Revision: 11-Dec-17 Document Number: 95767 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GP300TD60S www.vishay.com Vishay Semiconductors 300 10 TJ = 150 °C VCE = 20 V 250 1 TJ = 125 °C ICES (mA) IC (A) 200 150 TJ = 125 °C 0.1 0.01 100 TJ = 25 °C TJ = 25 °C 0.001 50 0 0.0001 3 4 5 6 7 8 9 10 11 12 13 100 200 300 500 600 VCES (V) VGE (V) Fig. 5 - Typical IGBT Transfer Characteristics Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current 600 8.0 7.0 TJ = 25 °C 500 TJ = 25 °C 6.0 400 5.0 4.0 IF (A) VGEth (V) 400 TJ = 125 °C 3.0 300 200 2.0 100 1.0 0 TJ = 150 °C TJ = 125 °C 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0 8.0 0.4 0.8 1.2 IC (mA) 2.0 2.4 2.8 VF (V) Fig. 6 - Typical IGBT Gate Threshold Voltage Fig. 9 - Typical Diode Forward Characteristics 10 000 Allowable Case Temperature (°C) 160 1000 IC (A) 1.6 100 10 1 1 10 100 1000 VCE (V) Fig. 7 - IGBT Reverse BIAS SOA TJ = 150 °C, VGE = 15V 140 120 100 DC 80 60 40 20 0 0 30 60 90 120 150 180 210 240 IF - Continuous Forward Current (A) Fig. 10 - Maximum Diode Continuous Forward Current vs. Case Temperature Revision: 11-Dec-17 Document Number: 95767 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GP300TD60S www.vishay.com Vishay Semiconductors 60 10000 55 50 Switching Time (ns) 45 Energy (mJ) 40 35 Eoff 30 25 20 15 td(off) tf 1000 td(on) 10 Eon 5 tr 0 100 0 50 100 150 200 250 300 350 0 5 10 IC (A) 15 20 25 30 Rg (Ω) Fig. 14 - Typical IGBT Switching Time vs. Rg TJ = 125 °C, VCC = 300 V, IC = 300 A, VGE = 15 V, L = 500 μH Fig. 11 - Typical IGBT Energy Loss vs. IC TJ = 125 °C, VCC = 300 V, Rg = 1.5 , VGE = 15 V, L = 500 μH 10000 260 220 tf 1000 200 td(off) td(on) trr (ns) Switching Time (ns) 240 TJ = 125 °C 180 160 100 140 tr TJ = 25 °C 120 10 100 0 50 100 150 200 250 300 350 200 600 800 1000 1200 1400 1600 dIF/dt (A/μs) Fig. 12 - Typical IGBT Switching Time vs. IC TJ = 125 °C, VCC = 300 V, Rg = 1.5 , VGE = 15 V, L = 500 μH Fig. 15 - Typical Diode Reverse Recovery Time vs. dIF/dt VCC = 300 V, IF = 300 A 80 70 Eoff 60 50 Irr (A) Energy (mJ) 400 IC (A) 40 Eon 30 20 10 0 0 5 10 15 20 25 30 140 130 120 110 100 90 80 70 60 50 40 30 20 10 TJ = 125 °C TJ = 25 °C 200 400 600 800 1000 1200 1400 1600 Rg (Ω) dIF/dt (A/μs) Fig. 13 - Typical IGBT Energy Loss vs. Rg TJ = 125 °C, VCC = 300 V, IC = 300 A, VGE = 15 V, L = 500 μH Fig. 16 - Typical Diode Reverse Recovery Current vs. dIF/dt VCC = 300 V, IF = 300 A Revision: 11-Dec-17 Document Number: 95767 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GP300TD60S www.vishay.com Vishay Semiconductors 16 14 12 TJ = 125 °C Qrr (μC) 10 8 6 TJ = 25 °C 4 2 0 200 400 600 800 1000 1200 1400 1600 dIF/dt (A/μs) Fig. 17 - Typical Diode Reverse Recovery Charge vs. dIF/dt VCC = 300 V, IF = 300 A ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.01 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 18 - Maximum Thermal Impedance ZthJC Characteristics - (IGBT) ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 19 - Maximum Thermal Impedance ZthJC Characteristics - (Diode) Revision: 11-Dec-17 Document Number: 95767 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GP300TD60S www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- G P 300 T D 60 S 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Insulated gate bipolar transistor (IGBT) 3 - Trench PT IGBT technology 4 - Current rating (300 = 300 A) 5 - Circuit configuration (T = half bridge) 6 - Package indicator (D = dual INT-A-PAK low profile) 7 - Voltage rating (60 = 600 V) 8 - Speed / type (S = standard speed IGBT) CIRCUIT CONFIGURATION 3 4 5 1 6 7 2 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95435 Revision: 11-Dec-17 Document Number: 95767 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors Dual INT-A-PAK Low Profile DIMENSIONS in millimeters 2.8 x 0.5 21.9 ± 0.5 15 ± 0.5 7.5 13.5 7.2 16 ± 0.5 M5 screwing depth max. 8 48 ± 0.5 12 15 ± 0.4 27 ± 0.4 28 ± 0.5 48 ± 0.3 62 ± 1 28 ± 0.5 Ø6 .4 93 ± 0.3 108 ± 1 Revision: 11-Nov-14 Document Number: 95435 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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