VS-GT100TP120N
www.vishay.com
Vishay Semiconductors
Half Bridge IGBT Power Module, 1200 V, 100 A
FEATURES
• Low VCE(sat) trench IGBT technology
• 10 μs short circuit capability
• VCE(sat) with positive temperature coefficient
• Maximum junction temperature 175 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
INT-A-PAK
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
VCES
1200 V
TYPICAL APPLICATIONS
IC at TC = 80 °C
100 A
• UPS (Uninterruptable Power Supply)
VCE(on) (typical)
at IC = 100 A, 25 °C
1.90 V
• Inverter for motor drive
Speed
8 kHz to 30 kHz
Package
INT-A-PAK
Circuit
Half bridge
• AC and DC servo drive amplifier
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
Collector to emitter voltage
VCES
1200
Gate to emitter voltage
VGES
± 30
Collector current
Pulsed collector current
TC = 25 °C
IC
ICM (1)
Diode continuous forward current
IF
Diode maximum forward current
IFM (1)
UNITS
V
180
TC = 80 °C
100
tp = 1 ms
200
TC = 80 °C
100
A
tp = 1 ms
200
Maximum power dissipation
PD
TJ = 175 °C
652
W
Short circuit withstand time
tSC
TC = 125 °C
10
μs
4000
V
RMS isolation voltage
VISOL
f = 50 Hz, t = 1 min
Note
(1) Repetitive rating: pulse width limited by maximum junction temperature.
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Collector to emitter breakdown voltage
V(BR)CES
Collector to emitter saturation voltage
VCE(sat)
Gate to emitter threshold voltage
TEST CONDITIONS
MIN.
TYP.
MAX.
1200
-
-
VGE = 15 V, IC = 100 A, TJ = 25 °C
-
1.90
2.35
VGE = 15 V, IC = 100 A, TJ = 175 °C
-
2.50
7.5
TJ = 25 °C
UNITS
V
VGE(th)
VCE = VGE, IC = 5.0 mA, TJ = 25 °C
5.0
5.9
Collector cut-off current
ICES
VCE = VCES, VGE = 0 V, TJ = 25 °C
-
-
5.0
mA
Gate to emitter leakage current
IGES
VGE = VGES, VCE = 0 V, TJ = 25 °C
-
-
400
nA
Revision: 11-Jun-15
Document Number: 93800
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT100TP120N
www.vishay.com
Vishay Semiconductors
SWITCHING CHARACTERISTICS
PARAMETER
SYMBOL
Turn-on delay time
MIN.
TYP.
MAX.
td(on)
-
187
-
tr
-
57
-
td(off)
-
180
-
Rise time
Turn-off delay time
Fall time
tf
TEST CONDITIONS
VCC = 600 V, IC = 100 A, Rg = 5.6 ,
VGE = ± 15 V, TJ = 25 °C
-
149
-
Turn-on switching loss
Eon
-
4.97
-
Turn-off switching loss
Eoff
-
4.69
-
Turn-on delay time
td(on)
-
189
-
tr
-
58
-
td(off)
-
187
-
-
220
-
Rise time
Turn-off delay time
Fall time
tf
VCC = 600 V, IC = 100 A, Rg = 5.6 ,
VGE = ± 15 V, TJ = 125 °C
Turn-on switching loss
Eon
-
7.80
-
Turn-off switching loss
Eoff
-
5.85
-
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
SC data
tp 10 μs, VGE = 15 V, TJ = 125 °C,
VCC = 900 V, VCEM 1200 V
ISC
-
12.8
-
-
0.46
-
-
0.32
-
-
890
-
ns
mJ
ns
mJ
nF
A
LCE
-
-
30
nH
RCC’+EE’
-
0.75
-
m
UNITS
Stray inductance
Module lead resistance, terminal to chip
VGE = 0 V, VCE = 30 V, f = 1.0 MHz
UNITS
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Forward voltage
VF
Reverse recovery charge
Qrr
Peak reverse recovery current
Irr
Reverse recovery energy
TEST CONDITIONS
IF = 100 A
IF = 100 A, VR = 600 V,
RG = 5.6
VGE = -15 V
Erec
MIN.
TYP.
MAX.
TJ = 25 °C
-
1.82
2.20
TJ = 125 °C
-
1.95
-
TJ = 25 °C
-
8.1
-
TJ = 125 °C
-
14.0
-
TJ = 25 °C
-
81
-
TJ = 125 °C
-
98
-
TJ = 25 °C
-
2.99
-
TJ = 125 °C
-
4.85
-
V
μC
A
mJ
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction temperature
Storage temperature range
Junction to case
per ½ module
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
TJ
-
-
175
°C
TStg
-40
-
125
°C
IGBT
Diode
Case to sink (Conductive grease applied)
RthJC
RthCS
-
-
0.23
-
-
0.36
-
0.05
-
Power terminal screw: M5
2.5 to 5.0
Mounting screw: M6
3.0 to 5.0
Mounting torque
Weight
K/W
Nm
Weight of module
-
150
-
g
Revision: 11-Jun-15
Document Number: 93800
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT100TP120N
www.vishay.com
Vishay Semiconductors
30
200
VGE = 15 V
175
VCC = 600 V
RG = 5.6 Ω
VGE = ± 15 V
TJ = 125 °C
25
150
E (mJ)
IC (A)
20
25 °C
125
100
15
EON
175 °C
75
10
50
EOFF
5
25
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
50
100
VCE (V)
200
IC (A)
Fig. 1 - IGBT Typical Output Characteristics
Fig. 3 - IGBT Switching Loss vs. IC
200
35
VCE = 50 V
175
30
150
E (mJ)
100
75
25 °C
VCC = 600 V
IC = 100 A
VGE = ± 15 V
TJ = 125 °C
EON
25
175 °C
125
IC (A)
150
20
15
10
50
5
25
0
EOFF
0
4
5
6
7
8
9
10
11
12
0
10
20
30
40
50
VGE (V)
Rg (Ω)
Fig. 2 - IGBT Transfer Characteristics
Fig. 4 - IGBT Switching Loss vs. RG
60
250
Module
IC (A)
200
150
100
RG = 5.6 Ω
VGE = ± 15 V
TJ = 125 °C
50
0
0
350
700
1050
1400
VCE (V)
Fig. 5 - RBSOA
Revision: 11-Jun-15
Document Number: 93800
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT100TP120N
www.vishay.com
Vishay Semiconductors
1
ZthJC (K/W)
IGBT
0.1
0.01
0.001
0.001
0.01
0.1
10
1
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
200
8
175
7
150
6
IF (A)
125 °C
100
RG = 5.6 Ω
VGE = - 15 V
TJ = 125 °C
5
E (mJ)
25 °C
125
VCC = 600 V
EREC
4
75
3
50
2
25
1
0
0
0
0.5
1
1.5
2
2.5
0
3
50
100
150
VF (V)
IF (V)
Fig. 7 - Diode Forward Characteristics
Fig. 8 - Diode Switching Loss vs. IF
200
6
5
EREC
E (mJ)
4
3
2
VCC = 600 V
1
IF = 100 A
VGE = - 15 V
TJ = 125 °C
0
0
10
20
30
40
50
60
RG (Ω)
Fig. 9 - Diode Switching Loss vs. RG
Revision: 11-Jun-15
Document Number: 93800
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT100TP120N
www.vishay.com
Vishay Semiconductors
1
ZthJC (K/W)
Diode
0.1
0.01
0.001
0.01
0.1
1
10
t (s)
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
6
7
1
2
3
5
4
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95524
Revision: 11-Jun-15
Document Number: 93800
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
INT-A-PAK
DIMENSIONS in millimeters (inches)
Revision: 06-Aug-12
Document Number: 95524
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
