VS-GT100TP60N
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Vishay Semiconductors
Half Bridge IGBT Power Module, 600 V, 100 A
FEATURES
• Low VCE(on) trench IGBT technology
• 5 μs short circuit capability
• VCE(on) with positive temperature coefficient
• Maximum junction temperature 175 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (direct copper
bonding) technology
INT-A-PAK
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
• UPS (uninterruptable power supply)
VCES
600 V
IC at TC = 80 °C
100 A
VCE(on) (typical)
at IC = 100 A, 25 °C
1.65 V
Speed
8 kHz to 30 kHz
Package
INT-A-PAK
Circuit configuration
Half bridge
• Switching mode power supplies
• Electronic welders
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as UPS and SMPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
Collector to emitter voltage
VCES
600
Gate to emitter voltage
VGES
± 20
Collector current
Pulsed collector current
TC = 25 °C
IC
ICM (1)
Diode continuous forward current
IF
Diode maximum forward current
IFM (1)
UNITS
V
160
TC = 80 °C
100
tp = 1 ms
200
TC = 80 °C
100
A
tp = 1 ms
200
Maximum power dissipation
PD
TJ = 175 °C
417
W
Short circuit withstand time
tSC
TC = 125 °C
5
μs
4000
V
RMS isolation voltage
VISOL
f = 50 Hz, t = 1 min
Note
(1) Repetitive rating: pulse width limited by maximum junction temperature
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
Collector to emitter breakdown voltage
SYMBOL
V(BR)CES
Collector to emitter voltage
VCE(on)
Gate to emitter threshold voltage
TEST CONDITIONS
TJ = 25 °C
MIN.
TYP.
MAX.
600
-
-
VGE = 15 V, IC = 100 A, TJ = 25 °C
-
1.65
2.10
VGE = 15 V, IC = 100 A, TJ = 175 °C
-
2.00
6.5
UNITS
V
VGE(th)
VCE = VGE, IC = 1.0 mA, TJ = 25 °C
4.0
4.4
Collector cut-off current
ICES
VCE = VCES, VGE = 0 V, TJ = 25 °C
-
-
5.0
mA
Gate to emitter leakage current
IGES
VGE = VGES, VCE = 0 V, TJ = 25 °C
-
-
400
nA
Revision: 19-Sep-17
Document Number: 93799
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT100TP60N
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Vishay Semiconductors
SWITCHING CHARACTERISTICS
PARAMETER
SYMBOL
Turn-on delay time
TEST CONDITIONS
td(on)
Rise time
tr
Turn-off delay time
VCC = 300 V, IC = 100 A, Rg = 2.2 ,
VGE = ± 15 V, TJ = 25 °C
td(off)
Fall time
tf
MIN.
TYP.
MAX.
-
106
-
-
49
-
-
102
-
-
85
-
Turn-on switching loss
Eon
-
0.46
-
Turn-off switching loss
Eoff
-
0.95
-
Turn-on delay time
td(on)
-
112
-
tr
-
62
-
-
126
-
Rise time
Turn-off delay time
VCC = 300 V, IC = 100 A, Rg = 2.2 ,
VGE = ± 15 V, TJ = 125 °C
td(off)
Fall time
tf
-
109
-
Turn-on switching loss
Eon
-
0.78
-
Turn-off switching loss
Eoff
-
1.73
-
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
SC data
ISC
Stray inductance
Module lead resistance, terminal to chip
VGE = 0 V, VCE = 30 V, f = 1.0 MHz
tp 5 μs, VGE = 15 V, TJ = 125 °C,
VCC = 360 V, VCEM 1200 V
-
7.71
-
-
0.53
-
-
0.23
-
-
900
-
UNITS
ns
mJ
ns
mJ
nF
A
LCE
-
-
30
nH
RCC’+EE’
-
0.75
-
m
UNITS
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Forward voltage
VF
Reverse recovery charge
Qrr
Peak reverse recovery current
Irr
Reverse recovery energy
TEST CONDITIONS
IF = 100 A
IF = 100 A, VR = 600 V,
RG = 5.6
VGE = -15 V
Erec
MIN.
TYP.
MAX.
TJ = 25 °C
-
1.40
1.80
TJ = 125 °C
-
1.40
-
TJ = 25 °C
-
5.5
-
TJ = 125 °C
-
7.3
-
TJ = 25 °C
-
68
-
TJ = 125 °C
-
88
-
TJ = 25 °C
-
0.89
-
TJ = 125 °C
-
1.71
-
V
μC
A
mJ
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction temperature
Storage temperature range
Junction to case
IGBT
Diode
Case to sink (conductive grease applied)
Mounting torque
Weight
MIN.
TYP.
MAX.
TJ
TEST CONDITIONS
-
-
175
TStg
-40
-
125
-
-
0.36
-
-
0.57
-
0.05
-
RthJC
RthCS
Power terminal screw: M5
2.5 to 5.0
Mounting screw: M6
3.0 to 5.0
-
150
UNITS
°C
K/W
Nm
-
g
Revision: 19-Sep-17
Document Number: 93799
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT100TP60N
www.vishay.com
Vishay Semiconductors
5
200
VCC = 300 V
RG = 2.2 Ω
VGE = ± 15 V
TJ = 125 °C
4.5
VGE = 15 V
175
4
150
25 °C
3.5
100
E (mJ)
IC (A)
125
175 °C
3
2.5
EON
2
75
1.5
50
1
25
EOFF
0.5
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
50
100
150
VCE (V)
IC (A)
Fig. 1 - IGBT Typical Output Characteristics
Fig. 3 - IGBT Switching Loss vs. IC
200
7
200
VCE = 50 V
175
VCC = 300 V
IC = 100 A
VGE = ± 15 V
TJ = 125 °C
6
150
5
175 °C
E (mJ)
IC (A)
125
100
4
Eon
3
75
Eoff
2
50
25 °C
1
25
0
0
4
5
6
7
8
9
0
10
10
20
30
40
50
Rg (Ω)
VGE (V)
Fig. 2 - IGBT Transfer Characteristics
Fig. 4 - IGBT Switching Loss vs. RG
250
Module
200
IC (A)
150
100
RG = 2.2 Ω
VGE = ± 15 V
TJ = 125 °C
50
0
0
100
200
300
400
500
600
700
VCE (V)
Fig. 5 - RBSOA
Revision: 19-Sep-17
Document Number: 93799
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT100TP60N
www.vishay.com
Vishay Semiconductors
ZthJC (K/W)
1
IGBT
0.1
0.01
0.001
0.01
0.1
1
10
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
200
2.5
VCC = 300 V
RG = 2.2 Ω
VGE = - 15 V
TJ = 125 °C
175
2
E (mJ)
150
IF (A)
125
100
1.5
EREC
1
75
125 °C
50
0.5
25 °C
25
0
0
0
0.5
1
1.5
0
2
50
100
150
VF (V)
IF (A)
Fig. 7 - Diode Forward Characteristics
Fig. 8 - Diode Switching Loss vs. IF
200
2
1.8
1.6
E (mJ)
1.4
EREC
1.2
1
0.8
0.6
VCC = 300 V
IF = 100 A
VGE = - 15 V
TJ = 125 °C
0.4
0.2
0
0
10
20
30
40
50
RG (Ω)
Fig. 9 - Diode Switching Loss vs. RG
Revision: 19-Sep-17
Document Number: 93799
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT100TP60N
www.vishay.com
Vishay Semiconductors
1
ZthJC (K/W)
Diode
0.1
0.01
0.001
0.01
0.1
1
10
t (s)
Fig. 10 - Forward Characteristics of Diode
CIRCUIT CONFIGURATION
6
7
1
2
3
5
4
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95524
Revision: 19-Sep-17
Document Number: 93799
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
INT-A-PAK
DIMENSIONS in millimeters (inches)
Revision: 06-Aug-12
Document Number: 95524
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Document Number: 91000
