VS-GT140DA60U

VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 μs short circuit capability • FRED Pt® antiparallel diodes with ultrasoft reverse recovery • TJ maximum = 175 °C • Fully isolated package SOT-227 • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 PRIMARY CHARACTERISTICS VCES 600 V IC DC 140 A at 90 °C VCE(on) typical at 100 A, 25 °C 1.72 V IF DC 71 A at 90 °C Speed 8 kHz to 30 kHz • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 BENEFITS • Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating Package SOT-227 Circuit configuration Single switch with AP diode • Easy to assemble and parallel • Direct mounting to heatsink • Plug-in compatible with other SOT-227 packages • Lower conduction losses and switching losses • Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current SYMBOL TEST CONDITIONS VCES IC MAX. UNITS 600 V TC = 25 °C 200 TC = 90 °C 140 Pulsed collector current ICM 350 Clamped inductive load current ILM 350 Diode continuous forward current Gate-to-emitter voltage Power dissipation, IGBT Power dissipation, diode Isolation voltage IF TC = 25 °C TC = 90 °C VGE PD PD VISOL A 104 71 ± 20 TC = 25 °C 652 TC = 90 °C 370 TC = 25 °C 238 TC = 90 °C 135 Any terminal to case, t = 1 min 2500 V W V Revision: 10-Sep-2019 Document Number: 94772 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT140DA60U www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage SYMBOL VBR(CES) VCE(on) VGE(th) Temperature coefficient of threshold voltage VGE(th)/TJ Collector to emitter leakage current ICES Forward voltage drop, diode Gate to emitter leakage current VFM IGES TEST CONDITIONS MIN. TYP. MAX. VGE = 0 V, IC = 250 μA 600 - - VGE = 15 V, IC = 100 A - 1.7 2.0 VGE = 15 V, IC = 100 A, TJ = 125 °C - 2.0 2.2 VGE = 15 V, IC = 100 A, TJ = 175°C - 2.15 - VCE = VGE, IC = 250 μA UNITS V 3.5 4.6 6.5 VCE = VGE, IC = 250 μA, TJ = 125 °C - 2.65 - VCE = VGE, IC = 1 mA (25 °C to 125 °C) - -16.8 - mV/°C μA VGE = 0 V, VCE = 600 V - 0.6 100 VGE = 0 V, VCE = 600 V, TJ = 125 °C - 0.15 3 VGE = 0 V, VCE = 600 V, TJ = 175 °C - 8 - IF = 40 A, VGE = 0 V - 1.74 2.2 IF = 40 A, VGE = 0 V, TJ = 125 °C - 1.35 1.74 IF = 40 A, VGE = 0 V, TJ = 150 °C - 1.2 - VGE = ± 20 V - - ± 200 nA UNITS mA V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER MIN. TYP. MAX. Eon - 0.43 - Turn-off switching loss Eoff - 1.50 - Total switching loss Etot - 1.93 - Turn-on delay time td(on) - 130 - - 50 - - 127 - - 82 - - 0.43 - - 2.12 - - 2.55 - - 130 - - 52 - td(off) - 130 - tf - 100 - Turn-on switching loss Rise time Turn-off delay time Fall time SYMBOL tr Turn-off switching loss Eoff Total switching loss Etot Turn-on delay time td(on) Fall time Reverse bias safe operating area tr RBSOA Diode reverse recovery time trr Diode reverse recovery current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Short circuit safe operating area Energy losses include tail and diode recovery. Diode used 60APH06 tf Eon Turn-off delay time IC = 100 A, VCC = 360 V, VGE = 15 V, Rg = 5  L = 500 μH, TJ = 25 °C td(off) Turn-on switching loss Rise time TEST CONDITIONS SCSOA IC = 100 A, VCC = 360 V, VGE = 15 V, Rg = 5   L = 500 μH, TJ = 125 °C TJ = 175 °C, IC = 350 A, Rg = 22  VGE = 15 V to 0 V, VCC = 400 V, VP = 600 V, L = 500 μH IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V IF = 50 A, dIF/dt = 200 A/μs,  VR = 200 V, TJ = 125 °C TJ = 175 °C, Rg = 22 VGE = 15 V to 0 V, VCC = 400 V, VP = 600 V mJ ns mJ ns Fullsquare - 72 - - 5.5 - A - 200 - nC - 144 - ns - 13 - A - 930 - nC 3 ns μs Revision: 10-Sep-2019 Document Number: 94772 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT140DA60U www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction and storage temperature range IGBT Junction to case SYMBOL MIN. TYP. MAX. UNITS TJ, TStg -40 - 175 °C - - 0.23 - - 0.63 - 0.1 - - 30 - RthJC Diode Case to heatsink RthCS Flat, greased surface Weight Mounting torque - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - 1.8 (15.9) Nm (lbf.in) SOT-227 Allowable Case Temperature (°C) 180 160 140 DC 120 100 80 60 40 20 0 160 140 120 100 80 60 40 20 0 20 40 60 80 100 120 140 160 180 200 220 0 20 40 60 80 100 120 IC - Continuous Collector Current (A) IF - Continuous Forward Current (A) Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature Fig. 3 - Maximum Allowable Forward Current vs. Case Temperature, Diode Leg 300 200 VGE = 15 V TJ = 125 °C 250 IF - Forward Current (A) Allowable Case Temperature (°C) 180 IC - Collector-to-Emitter Current (A) g Torque to terminal Case style 0 °C/W 200 150 TJ = 25 °C TJ = 175 °C 100 50 0 160 TJ = 175 °C 120 80 TJ = 25 °C 40 TJ = 125 °C 0 0.0 1.0 2.0 3.0 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VCE - Collector-to-Emitter Voltage (V) VF - Forward Voltage Drop Characteristics (V) Fig. 2 - Typical Collector to Emitter Current Output Characteristics of IGBT Fig. 4 - Typical Diode Forward Voltage Drop Characteristics Revision: 10-Sep-2019 Document Number: 94772 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT140DA60U Vishay Semiconductors VCE - Collector-to-Emitter Voltage (V) IC - Collector-to-Emitter Current (A) www.vishay.com 140 120 100 TJ = 175 °C 80 60 40 TJ = 125 °C TJ = 25 °C 20 0 2.4 IC = 100 A 2.2 2 IC = 75 A 1.8 IC = 50 A 1.6 1.4 IC = 25 A 1.2 1 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 0 40 80 100 120 140 160 180 TJ - Junction Temperature (°C) Fig. 5 - Typical IGBT Transfer Characteristics Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V 2.2 0.1 TJ = 125 °C 0.01 0.001 TJ = 25 °C 0.0001 Switching Energy (mJ) 1 Eoff 2 TJ = 175 °C 1.8 1.6 1.4 1.2 1 0.8 0.6 Eon 0.4 0.2 0 0.00001 0 100 200 300 400 500 600 10 20 30 40 50 60 70 80 90 100 110 120 VCES - Collector-to-Emitter Voltage (V) IC - Collector Current (A) Fig. 9 - Typical IGBT Energy Losses vs. IC TJ = 125 °C, L = 500 μH, VCC = 360 V, Rg = 5 , VGE = 15 V, Diode used: 60APH06 Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current 1 5 4.5 TJ = 25 °C Switching Time (μs) VGETH - Threshold Voltage (V) 60 VGE - Gate-to-Emitter Voltage (V) 10 ICES - Collector Current (mA) 20 4 3.5 3 2.5 TJ = 125 °C 2 0.1 td(on) tr 1.5 1 0.20 td(off) tf 0.01 0.40 0.60 0.80 1.00 0 20 40 60 80 100 120 IC (mA) IC - Collector Current (A) Fig. 7 - Typical IGBT Threshold Voltage Fig. 10 - Typical IGBT Switching Time vs. IC TJ = 125 °C, L = 500 μH, VCC = 360 V, Rg = 5 , VGE = 15 V, Diode used: 60APH06 Revision: 10-Sep-2019 Document Number: 94772 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT140DA60U www.vishay.com Vishay Semiconductors 6 200 180 5 125 °C 160 4.5 4 Eoff 3.5 140 trr (ns) Energy Losses (mJ) VR = 200 V IF = 50 A Eon 5.5 3 2.5 120 100 2 25 °C 80 1.5 1 60 0.5 40 0 0 10 20 30 40 100 50 1000 Rg (Ω) dIF/dt (A/μs) Fig. 11 - Typical IGBT Energy Loss vs. Rg TJ = 125 °C, IC = 100 A, L = 500 μH, VCC = 360 V, VGE = 15 V, Diode used: 60APH06 Fig. 13 - Typical Reverse Recovery Time vs. dIF/dt of Diode 2000 1 1500 td(on) td(off) Qrr (nC) Switching Time (μs) VR = 200 V IF = 50 A tr 0.1 125 °C 1000 tf 500 25 °C 0.01 0 10 20 30 40 50 0 100 60 1000 Rg (Ω) dIF/dt (A/μs) Fig. 12 - Typical IGBT Switching Time vs. Rg TJ = 125 °C, L = 500 μH, VCC = 360 V, IC = 100 A, VGE = 15 V, Diode used: 60APH06 Fig. 14 - Typical Stored Charge vs. dIF/dt of Diode 35 VR = 200 V IF = 50 A 30 IRR (A) 25 20 125 °C 15 10 25 °C 5 0 100 1000 dIF/dt (A/μs) Fig. 15 - Typical Reverse Recovery Current vs. dIF/dt of Diode Revision: 10-Sep-2019 Document Number: 94772 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT140DA60U www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 PDM D = 0.75 D = 0.50 D = 0.25 D = 0.1 D = 0.05 D = 0.02 DC 0.01 0.001 0.0001 0.001 0.01 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.1 1 . 10 t1 - Rectangular Pulse Duration (s) Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics, IGBT ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.75 D = 0.50 D = 0.25 D = 0.1 D = 0.05 D = 0.02 DC 0.01 PDM t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.001 0.0001 0.001 0.01 0.1 1 . 10 t1 - Rectangular Pulse Duration (s) Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics, Diode 1000 IC (A) 100 10 1 0.1 0.01 1 10 100 1000 VCE (V) Fig. 18 - IGBT Reverse BIAS SOA, TJ = 175 °C, VGE = 15 V Revision: 10-Sep-2019 Document Number: 94772 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT140DA60U www.vishay.com Vishay Semiconductors R= L D.U.T. VCC ICM VC * 50 V 1000 V D.U.T. 1 2 + -V CC Rg * Driver same type as D.U.T.; VC = 80 % of Vce(max) * Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain Id Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L - + -5V + VCC D.U.T./ driver Rg Fig. 21 - Switching Loss Test Circuit 1 2 90 % 10 % 3 VC 90 % td(off) 10 % IC 5% tf tr td(on) t = 5 µs Eoff Eon Ets = (Eon + Eoff) Fig. 22 - Switching Loss Waveforms Test Circuit Revision: 10-Sep-2019 Document Number: 94772 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT140DA60U www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- G T 140 D A 60 U 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Insulated Gate Bipolar Transistor (IGBT) 3 - T = trench IGBT Technology 4 - Current rating (140 = 140 A) 5 - Circuit configuration (D = single switch with antiparallel diode) 6 - Package indicator (A = SOT-227) 7 - Voltage rating (60 = 600 V) 8 - Speed/type (U = ultrafast IGBT) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING 3 (C) Single switch with AP diode Lead Assignment 4 3 1 2 D 2 (G) 1, 4 (E) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Revision: 10-Sep-2019 Document Number: 94772 8 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation 2 DIMENSIONS in millimeters (inches) 37.80 (1.488) 38.30 (1.508) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) 24.70 (0.972) 25.70 (1.012) R full 2.07 (0.081) 2.12 (0.083) 29.80 (1.173) 30.50 (1.200) 31.50 (1.240) 32.10 (1.264) 4x 1.90 (0.075) 2.20 (0.087) 7.70 (0.303) 8.30 (0.327) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 5.33 (0.210) 5.96 (0.234) 11.60 (0.457) 12.30 (0.484) 24.70 (0.972) 25.50 (1.004) Note • Controlling dimension: millimeter Document Number: 95423 1 For technical questions, contact: DiodesAmericas@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 19-May-2020 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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