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Dual INT-A-PAK Low Profile 3-Level Half Bridge Inverter Stage, 300 A
FEATURES
• Trench plus Field Stop IGBT technology
• FRED Pt® antiparallel and clamping diodes
• Short circuit capability
• Low stray internal inductances
• Low switching loss
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATION
PRIMARY CHARACTERISTICS
• Solar converters
VCES
600 V
VCE(on) typical
at IC = 300 A
1.72 V
IC at TC = 25 °C
379 A
Speed
8 kHz to 30 kHz
Package
Dual INT-A-PAK low profile
Circuit configuration
3-level half bridge inverter stage
• Uninterruptible power supplies
BENEFITS
• Direct mounting on heatsink
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCE(sat)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
TJ
175
Storage temperature range
TStg
-40 to +175
RMS isolation voltage
VISOL
Collector to emitter voltage
VCES
600
Gate to emitter voltage
VGES
20
Pulsed collector current
ICM
650
Clamped inductive load current
ILM
Operating junction temperature
Continuous collector current
Power dissipation
IC
PD
TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s
°C
3500
650
TC = 25 °C
UNITS
379
TC = 80 °C
288
TC = 25 °C
1250
TC = 80 °C
792
V
A
W
D5 - D6 CLAMPING DIODE
Repetitive peak reverse voltage
VRRM
Single pulse forward current
IFSM
Diode continuous forward current
IF
Power dissipation
PD
600
10 ms sine or 6 ms rectangular pulse, TJ = 25 °C
800
TC = 25 °C
215
TC = 80 °C
161
TC = 25 °C
500
TC = 80 °C
317
10 ms sine or 6 ms rectangular pulse, TJ = 25 °C
800
TC = 25 °C
215
TC = 80 °C
161
TC = 25 °C
500
TC = 80 °C
317
V
A
W
D - D2 - D3 - D4 AP DIODE
Single pulse forward current
IFSM
Diode continuous forward current
IF
Power dissipation
PD
A
W
Note
• Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Q1 - Q2 - Q3 - Q4 TRENCH IGBT
Collector to emitter breakdown voltage
BVCES
Collector to emitter voltage
VCE(on)
Gate threshold voltage
VGE(th)
Temperature coefficient of threshold
voltage
VGE(th)/TJ
VGE = 0 V, IC = 500 μA
600
-
-
VGE = 15 V, IC = 300 A
-
1.72
2.5
VGE = 15 V, IC = 300 A, TJ = 125 °C
-
1.93
-
2.9
4.8
7.5
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
-
-17.8
-
mV/°C
-
315
-
S
V
VCE = VGE, IC = 16.8 mA
Forward transconductance
gfe
VCE = 20 V, IC = 300 A
Transfer characteristics
VGE
VCE = 20 V, IC = 300 A
-
7.9
-
VGE = 0 V, VCE = 600 V
-
0.4
250
VGE = 0 V, VCE = 600 V, TJ = 125 °C
-
300
-
-
-
± 500
Zero gate voltage collector current
ICES
Gate to emitter leakage current
IGES
VGE = ± 20 V, VCE = 0 V
VBR
IR = 100 μA
600
-
-
IF = 150 A
-
2.17
2.7
IF = 150 A, TJ = 125 °C
-
1.61
-
V
μA
nA
D5 - D6 CLAMPING DIODE
Cathode to anode blocking voltage
Forward voltage drop
VFM
Reverse leakage current
IRM
VR = 600 V
-
0.25
200
VR = 600 V, TJ = 125 °C
-
140
-
IF = 150 A
-
2.17
2.7
IF = 150 A, TJ = 125 °C
-
1.61
-
MIN.
TYP.
MAX.
V
μA
D1 - D2 - D3 - D4 AP DIODE
Forward voltage drop
VFM
V
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
Q1 - Q2 - Q3 - Q4 TRENCH IGBT
Total gate charge (turn-on)
Qg
IC = 300 A
-
750
-
Gate to emitter charge (turn-on)
Qge
VCC = 400 V
-
210
-
Gate to collector charge (turn-on)
Qgc
VGE = 15 V
-
300
-
IC = 150 A, VCC = 300 V
VGE = 15 V, Rg = 10
L = 500 μH, TJ = 25 °C
-
2.1
-
-
3.1
-
-
5.2
-
IC = 300 A, VCC = 300 V
VGE = 15 V, Rg = 22
L = 500 μH, TJ = 25 °C
-
8.6
-
-
15.4
-
-
24
-
-
2.6
-
IC = 150 A
-
3.7
-
VCC = 300 V
-
6.3
-
-
453
-
-
120
-
-
366
-
-
119
-
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Etot
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Etot
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Etot
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
VGE = 15 V
Rg = 10
L = 500 μH
TJ = 125 °C
nC
mJ
ns
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SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Q1 - Q2 - Q3 - Q4 TRENCH IGBT
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Etot
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
-
10.7
-
IC = 300 A
VCC = 300 V
VGE = 15 V
Rg = 22
L = 500 μH
TJ = 125 °C
-
15.6
-
-
26.3
-
-
840
-
-
279
-
-
566
-
-
129
-
VGE = 0 V
VCC = 30 V
f = 1 MHz
-
23.3
-
-
1.7
-
-
0.7
-
-
-
5.0
μs
ns
tf
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Reverse bias safe operating area
RBSOA
TJ = 175 °C, IC = 650 A
VCC = 270 V, VP = 600 V
Rg = 22 , VGE = 15 V to 0 V
Short circuit safe operating area
SCSOA
VCC = 400 V, Vp = 600 V
Rg = 10 , VGE = 15 V to 0 V
mJ
ns
nF
D5 - D6 CLAMPING DIODE
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
VR = 200 V
IF = 50 A
dl/dt = 500 A/μs
-
105
-
-
13.5
-
A
-
712
-
nC
VR = 200 V
IF = 50 A
dl/dt = 500 A/μs, TJ = 125 °C
-
166
-
ns
-
24.5
-
A
-
2050
-
nC
VR = 200 V
IF = 50 A
dl/dt = 500 A/μs
-
105
-
ns
-
13.5
-
A
-
712
-
nC
VR = 200 V
IF = 50 A
dl/dt = 500 A/μs, TJ = 125 °C
-
166
-
ns
-
24.5
-
A
-
2050
-
nC
D1 - D2 - D3 - D4 AP DIODE
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case IGBT thermal resistance (per switch)
Junction to case diode thermal resistance (per diode)
Case to sink, flat, greased surface (per module)
SYMBOL
RthJC
RthCS
MIN.
TYP.
MAX.
-
-
0.12
-
-
0.3
-
0.05
-
Mounting torque, case to heatsink: M6 screw
4
-
6
Mounting torque, case to terminal: 1, 2, 3, 4: M5 screw
2
-
5
Weight
-
270
-
UNITS
°C/W
Nm
g
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2.4
600
550
500
2.2
TJ = 25 °C
VCE (V)
400
IC (A)
300 A
2
450
TJ = 125 °C
350
300
TJ = 175 °C
250
1.8
1.6
150 A
1.4
200
80 A
1.2
150
100
1
50
0.8
0
0
0.5
1
1.5
2
2.5
3
3.5
0
4
20
40
60
80
100 120 140 160 180
VCE (V)
TJ - Junction Temperature (°C)
Fig. 1 - Typical Trench IGBT Output Characteristics, VGE = 15 V
Fig. 4 - Typical Trench IGBT Collector to Emitter Voltage vs.
Junction Temperature, VGE = 15 V
600
600
550
500
500
VGE = 15 V
450
400
450
400
VGE = 12 V
350
VGE = 9 V
ICE (A)
IC (A)
VCE = 20 V
550
VGE = 18 V
300
250
350
300
TJ = 125 °C
250
200
200
150
150
100
100
50
50
TJ = 25 °C
0
0
0
0.5
1
1.5
2
2.5
3
3.5
3.0
4
4.0
5.0
6.0
7.0
8.0
9.0
10.0
VGE (V)
Fig. 2 - Typical Trench IGBT Output Characteristics, TJ = 125 °C
Fig. 5 - Typical Trench IGBT Transfer Characteristics
200
6.0
180
5.5
160
5.0
140
4.5
DC
120
100
80
VGE(th) (V)
Allowable Case Temperature (°C)
VCE (V)
TJ = 25 °C
4.0
3.5
3.0
TJ = 125 °C
2.5
60
40
2.0
20
1.5
1.0
0
0
50
100 150 200 250 300 350 400 450
IC - Continuous Collector Current (A)
Fig. 3 - Maximum Trench IGBT Continuous Collector Current vs.
Case Temperature (per switch)
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
IC (mA)
Fig. 6 - Typical Trench IGBT Gate Threshold Voltage
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100
100
175 °C
10
1
125 °C
ICES (mA)
ICES (mA)
1
TJ = 175 °C
10
0.1
0.01
TJ = 125 °C
0.1
0.01
0.001
0.001
TJ = 25 °C
25 °C
0.0001
0.0001
0.00001
100
200
300
400
500
0.00001
100
600
200
300
Fig. 7 - Typical Trench IGBT Zero Gate Voltage Collector Current
3.8
500
3.4
TJ = 175 °C
3.0
Energy (mJ)
400
350
IF (A)
600
Fig. 10 - Typical Diode Reverse Leakage Current
600
550
300
500
VCES (V)
VCES (V)
450
400
TJ = 125 °C
250
TJ = 25 °C
200
150
100
EOFF
2.6
2.2
EON
1.8
1.4
50
0
1.0
0
0.5
1
1.5
2
2.5
3
3.5
4
40
60
80
VFM (V)
120
140
160
IC (A)
Fig. 8 - Typical Diode Forward Characteristics
Fig. 11 - Typical Trench IGBT Energy Loss vs. IC,
TJ = 125 °C, VCC = 300 V, Rg = 10 , VGE = 15 V, L = 500 μH
200
1000
td(on)
180
160
Switching time (ns)
Allowable Case Temperature (°C)
100
140
120
DC
100
80
60
td(off)
tf
100
tr
40
20
10
0
0
40
80
120
160
200
240
40
60
80
100
120
140
160
IF - Continuous Forward Current (A)
IC (A)
Fig. 9 - Maximum Diode Forward Current vs. Case Temperature
Fig. 12 - Typical IGBT Switching Time vs. IC,
TJ = 125 °C, VCC = 300 V, Rg = 10 , VGE = 15 V, L = 500 μH
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17
10 000
15
Switching time (ns)
Energy (mJ)
13
EOFF
11
9
EON
7
5
td(on)
1000
td(off)
tr
tf
100
3
10
1
20
60
100
140
180
220
260
300
20
340
23
26
29
32
35
38
41
44
47
50
IC (A)
Rg (Ω)
Fig. 13 - Typical Trench IGBT Energy Loss vs. IC,
TJ = 125 °C, VCC = 300 V, Rg = 22 , VGE = 15 V, L = 500 μH
Fig. 16 - Typical Trench IGBT Switching Time vs.Rg,
TJ = 125 °C, VCC = 300 V, IC = 300 A, VGE = 15 V, L = 500 μH
1000
1000
td(on)
tf
100
IC (A)
Switching time (ns)
td(off)
tr
100
10
1
10
20
60
100
140
180
220
260
300
0
340
100
200
400
500
600
700
VCE (V)
IC (A)
Fig. 14 - Typical IGBT Switching Time vs. IC,
TJ = 125 °C, VCC = 300 V, Rg = 22 , VGE = 15 V, L = 500 μH
Fig. 17 - Trench IGBT Reverse Bias SOA
TJ = 175 °C, VGE = 15 V, Rg = 22
32
240
29
220
200
26
TJ = 125 °C
180
23
trr (ns)
Energy (mJ)
300
20
EOFF
17
160
140
TJ = 25 °C
120
14
100
EON
11
80
8
20
23
26
29
32
35
38
41
44
47
50
60
100
200
300
400
500
Rg (Ω)
dIF/dt (A/μs)
Fig. 15 - Typical Trench IGBT Energy Loss vs.Rg,
TJ = 125 °C, VCC = 300 V, IC = 300 A, VGE = 15 V, L = 500 μH
Fig. 18 - Typical Diode Reverse Recovery Time vs. dIF/dt,
Vrr = 200 V, IF = 50 A
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28
26
24
22
20
18
16
14
12
10
8
6
4
2
100
Vishay Semiconductors
2400
2200
TJ = 125 °C
2000
TJ = 125 °C
1800
1600
Qrr (nC)
Irr (A)
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1400
1200
1000
800
TJ = 25 °C
TJ = 25 °C
600
400
200
0
200
300
400
100
500
200
300
400
500
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 19 - Typical Diode Reverse Recovery Current vs. dIF/dt,
Vrr = 200 V, IF = 50 A
Fig. 20 - Typical Diode Reverse Recovery Charge vs. dIF/dt,
Vrr = 200 V, IF = 50 A
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.5
0.01
0.2
0.1
0.05
0.001
0.02
0.01
DC
0.0001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 21 - Maximum Thermal Impedance ZthJC Characeristics (Trench IGBT)
ZthJC - Thermal Impeadnce
Junction to Case (°C/W)
1
0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
DC
0.001
0.0001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 22 - Maximum Thermal Impedance ZthJC Characeristics (Diode)
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ORDERING INFORMATION TABLE
Device code
VS-
G
T
300
F
D
060
N
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Insulated gate bipolar transistor
3
-
T = trench IGBT
4
-
Current rating (300 = 300 A)
5
-
F = 3-level circuit configuration
6
-
Package indicator D = dual INT-A-PAK low profile
7
-
Voltage rating (060 = 600 V)
8
-
N = ultrafast
CIRCUIT CONFIGURATION
1
Q1
D1
5
6
Q2
D2
D5
7
8
4
2
Q3
D3
D6
9
10
Q4
D4
11
12
3
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95515
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Outline Dimensions
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DIAP Low Profile - 4 Leads
DIMENSIONS in millimeters
48 ± 0.5
48 ± 0.5
8
10
7
9
18.2 ± 0.5
15 ± 0.4
27 ± 0.4
48 ± 0.3
6
17 ± 0.5
5
12
5.1 ± 0.5
27 ± 0.5
12 11
27 ± 0.5
62 ± 1
21.9 ± 0.5
15 ± 0.5
7.2
16 ± 0.5
13.5
2.8 x 0.5
7.5
M5
screwing depth
max. 8
Ø6
.4
93 ± 0.3
108 ± 1
Revision: 10-Nov-14
Document Number: 95515
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 01-Jan-2022
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Document Number: 91000
