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DIAP Trench IGBT Power Module - 1200 V, 300 A
Current Fed Inverter Topology
FEATURES
• 1200 V IGBT trench and field stop technology
with positive temperature coefficient
• Low switching losses
• Maximum junction temperature 175 °C
• 10 μs short circuit capability
• Low inductance case
• HEXFRED® antiparallel and series diodes with soft reverse
recovery
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
PRIMARY CHARACTERISTICS
• Speed 4 kHz to 30 kHz
IGBT
VCES
1200 V
• Direct mounting to heatsink
VCE(on) (typical) at 300 A, 25 °C
1.93 V
ID(DC) at TC = 80 °C
300 A
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
HEXFRED® SERIES DIODE
BENEFITS
VR
1200 V
VF (typical) at 300 A, 25 °C
1.99 V
IF(DC) at 80 °C
300 A
IGBT AND
HEXFRED® SERIES
VCE(on) + VF typical at 300 A
REMARKS
• Product reliability results valid for TJ = 150 °C
DIODE
• Recommended operation temperature Top = 150 °C
3.92 V
HEXFRED® ANTIPARALLEL
VF (typical) at 10 A, 25 °C
• Short circuit ruggedness
DIODE
1.6 V
IF(DC) at 88 °C
40 A
Package
Dual INT-A-PAK
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
1200
V
IGBT
Collector to emitter voltage
Collector current
Pulsed collector current
Clamped inductive load current
Gate to emitter voltage
Maximum power dissipation
VCES
IC
TC = 80 °C
TC = 25 °C
ICM
300
400
720
ILM (1)
700
VGE
± 20
PD
TC = 80 °C
791
TC = 25 °C
1250
A
V
W
SERIES DIODE
Cathode to anode breakdown voltage
Continuous forward current
Peak repetitive forward current
Maximum power dissipation
VRRM
IF
IFSM
PD
1200
TC = 80 °C
300
TC = 25 °C
412
TC = 25 °C
2200
TC = 80 °C
593
TC = 25 °C
938
A
A
W
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ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
ANTPARALLEL DIODE
Continuous forward current
IF (2)
Peak repetitive forward current
IFSM
Maximum power dissipation
PD
TC = 80 °C
42
TC = 25 °C
57
TC = 80 °C
106
TC = 25 °C
167
A
n/a
A
W
MODULE
RMS isolation voltage
VISOL
f = 50 Hz, t = 1 minute
Junction temperature range
TJ
-40 °C to +175 °C
Storage temperature range
TSTG
-40 °C to +150 °C
4000
V
°C
Notes
• Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur
(1) V
CC = 600 V, VP = 1200 V, VGE = 15 V, L = 500 μH, Rg = 4.7 , TJ = 150 °C
(2) Maximum RMS current admitted for the terminals 10 A
ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
VGE = 0 V, IC = 11.4 mA, TJ = 25 °C
1200
-
-
VGE = 15 V, IC = 300 A, TJ = 25 °C
-
1.93
-
VGE = 15 V, IC = 300 A, TJ = 125 °C
-
2.24
-
VGE = 15 V, IC = 300 A, TJ = 150 °C
-
2.32
-
VCE = VGE, IC = 11.4 mA, TJ = 25 °C
-
5.8
-
UNITS
IGBT
Collector to emitter breakdown voltage
Collector to emitter saturation voltage
Gate to emitter threshold voltage
V(BR)CES
VCE(on)
VGE(th)
V
Forward transconductance
gfe
VCE = 20 V, IC = 300 A
-
130
-
S
Transfer characteristics
VGE
VCE = 20 V, IC = 300 A
-
8.9
-
V
VGE = 0 V, VCE = 1200 V
-
1.3
-
Collector to emitter leakage current
ICES
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
-
0.95
-
VGE = 0 V, VCE = 1200 V, TJ = 150 °C
-
3.7
-
VGE = ± 20 V
-
-
250
nA
1200
-
-
V
VR = 1200 V
-
0.05
0.2
VR = 1200 V, TJ = 125 °C
-
3.5
-
IF = 300 A
-
1.99
-
IF = 300 A, TJ = 125 °C
-
2.02
-
IF = 10 A
-
1.6
-
IF = 10 A, TJ = 125 °C
-
1.4
-
IC = 300 A
-
3.92
-
Gate to emitter leakage current
IGES
mA
SERIES DIODE
Cathode to anode breakdown voltage
VR
Cathode to anode leakage current
IR
Forward voltage
VF
IR = 1.0 mA, TJ = 125 °C
mA
V
ANTIPARALLEL DIODE
Forward voltage
VF
V
IGBT AND HEXFRED® SERIES DIODE
Collector to emitter saturation voltage and
Forward voltage
VCE(on) + VF
V
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SWITCHING CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
IGBT (with freewheeling diode VS-H3195D12A6B in TO-247 Package)
Turn-on switching loss
Eon
-
29.7
-
Turn-off switching loss
Eoff
-
30.3
-
-
60.0
-
-
132
-
-
188
-
-
630
-
Total switching loss
Etot
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
IC = 300 A,
VCC = 600 V,
Rg = 4.7 ,
L = 500 μH,
VGE = ± 15 V
tf
-
84
-
Turn-on switching loss
Eon
-
33.2
-
Turn-off switching loss
Eoff
-
37.4
-
-
70.6
-
-
147
-
-
195
-
-
714
-
Total switching loss
Etot
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
IC = 300 A,
VCC = 600 V,
Rg = 4.7 ,
L = 500 μH,
VGE = ± 15 V,
TJ = 125 °C
tf
-
120
-
Input capacitance
Cies
-
18.7
-
Reverse transfer capacitance
Cres
-
0.7
-
VCE = 25 V, VGE = 0 V, f = 1.0 MHz
Reverse bias save operating area
RBSOA
TJ = 150 °C, Rg = 4.7 , VGE = 15 V,
IC = 600 A, VCC = 600 V, VP = 1200 V
Short circuit save operating area
SCSOA
TJ = 150 °C, VGE = 15 V, VCC = 800 V
mJ
ns
mJ
ns
nF
Full square
-
-
10
TJ = 25 °C
-
3.0
-
TJ = 125 °C
-
8.0
-
TJ = 25 °C
-
230
-
TJ = 125 °C
-
370
-
TJ = 25 °C
-
26
-
TJ = 125 °C
-
43
-
TJ = 25 °C
-
2.1
-
TJ = 125 °C
-
3.4
-
TJ = 25 °C
-
175
-
TJ = 125 °C
-
241
-
MIN.
TYP.
MAX.
μs
SERIES DIODE
Diode reverse recovery charge
Qrr
Reverse recovery time
trr
Reverse recovery current
Irr
IF = 50 A,
VR = 400 V,
di/dt = -500 A/μs
μC
nS
A
ANTIPARALLEL DIODE
Diode reverse recovery charge
Qrr
Reverse recovery time
trr
IF = 10 A,
VR = 400 V,
di/dt = 500 A/μs
μC
ns
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
IGBT
Junction to case
per ½ module
Series Diode
RthJC
Antiparallel Diode
Case to sink
Mounting torque
Weight
RthCS
Conductive grease applied
-
-
0.12
-
-
0.16
-
-
0.91
-
0.035
-
Power terminal screw: M6
2.5 to 5.0
Mounting screw: M6
3.0 to 5.0
300
UNITS
K/W
Nm
g
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160
600
140
VGE = 18 V
VGE = 15 V
500
VGE = 12 V
120
400
100
IC (A)
Max. Allowable Case Temperature (°C)
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80
60
VGE = 9 V
300
200
40
100
20
0
0
0
50
100
150
200
250
300
0
350 400
1
2
IC - Continuous Collector Current IGBT (A)
Fig. 1 - Maximum IGBT Continuous Collector Current vs.
Case Temperature
600
TJ = 125 °C
200
VGE = 12 V
VGE = 9 V
TJ = 25 °C
150
IC (A)
IC (A)
5
250
VGE = 15 V
400
4
Fig. 4 - Typical IGBT Output Characteristics, TJ = 150 °C
VGE = 18 V
500
3
VCE (V)
300
100
200
50
100
0
0
0
1
2
3
4
5
4
5
6
VCE (V)
9
10
Fig. 5 - Typical IGBT Transfer Characteristics
100
VGE = 18 V
TJ = 150 °C
VGE = 15 V
500
8
VGE (V)
Fig. 2 - Typical IGBT Output Characteristics, TJ = 25 °C
600
7
10
VGE = 12 V
1
VGE = 9 V
ICES (mA)
IC (A)
400
300
200
TJ = 125 °C
0.1
0.01
TJ = 25 °C
100
0.001
0
0
1
2
3
4
5
VCE (V)
Fig. 3 - Typical IGBT Output Characteristics, TJ = 125 °C
0.0001
100 200 300 400 500 600 700 800 900 1000 11001200
VCES (V)
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
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Allowable Case Temperature (°C)
6
TJ = 25 °C
VGEth (V)
5
4
TJ = 125 °C
3
160.00
140.00
120.00
100.00
80.00
60.00
40.00
20.00
0.00
2
0
2
4
6
8
10
12
0
14
30
40
50
60
Fig. 10 - Maximum Continuous Forward Current vs.
Case Temperature Antiparallel Diode
Fig. 7 - Typical IGBT Gate Threshold Voltage
100
160.00
90
140.00
80
120.00
70
100.00
TJ = 25 °C
60
IF (A)
Allowable Case Temperature (°C)
20
IF - Continuous Forward Current (A)
IC (mA)
80.00
50
40
60.00
TJ = 150 °C
30
40.00
20
20.00
TJ = 125 °C
10
0
0.00
0
50
100
150
200
250
300
350
0.5
400
1
1.5
3
3.5
4
100
600
550
TJ = 150 °C
10
500
TJ = 150 °C
1
350
300
TJ = 125 °C
250
IR (mA)
400
TJ = 125 °C
0.1
0.01
200
TJ = 25 °C
150
0.001
100
50
2.5
Fig. 11 - Typical Diode Forward Voltage Characteristics of
Antiparallel Diode tp = 500 μs
Fig. 8 - Maximum Continuous Forward Current vs.
Case Temperature Series Diode
450
2
VF - Anode to Cathode Forward Voltage Drop (V)
IF - Continuous Forward Current (A)
IF - Instantaneous Forward Drop (A)
10
TJ = 25 °C
0
0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3
VFM - Forward Voltage Drop (V)
Fig. 9 - Typical Series Diode Forward Voltage
0.0001
100 200 300 400 500 600 700 800 900 10001100 1200
VR (V)
Fig. 12 - Typical Series Diode Leakage Current vs. Reverse Voltage
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40
10 000
Energy (mJ)
30
td(off)
Eon
Switching Time (ns)
VCC = 600 V
Rg = 4.7 Ω
VGE = 15 V
L = 500 μH
Eoff
20
10
td(on)
1000
tr
tf
100
10
0
0
50
100
150
200
250
300
350
0
10
20
Ic (A)
Rg (Ω)
Fig. 13 - Typical IGBT Energy Loss vs. IC, TJ = 125 °C Freewheeling Diode VS-H3195D12A6B in TO-247 Package
Fig. 16 - Typical IGBT Switching Time vs. Rg,
TJ = 125 °C, IC = 100 A, VCE = 360 V, VGE = 15 V, L = 500 μH
500
140
VCC = 600 V
IC = 300 A
VGE = 15 V
L = 500 μH
450
10 A, TJ = 25 °C
400
100
Eon
trr (ns)
Energy (mJ)
120
80
60
10 A, TJ = 125 °C
40 A, TJ = 25 °C
350
40 A, TJ = 125 °C
300
250
Eoff
40
200
150
20
0
10
20
30
40
100
200
Rg (Ω)
300
400
500
diF/dt (A/μs)
Fig. 14 - Typical IGBT Energy Loss vs. Rg, TJ = 125 °C Freewheeling Diode VS-H3195D12A6B in TO-247 Package
Fig. 17 - Typical trr Antiparallel Diode vs. diF/dt, Vrr = 400 V
40
10 000
VCC = 600 V
Rg = 4.7 Ω
VGE = 15 V
L = 500 μH
40 A, TJ = 125 °C
35
td(off)
1000
30
td(on)
Irr (A)
Switching Time (ns)
30
tr
100
10 A, TJ = 125 °C
25
20
tf
15
10
10 A, TJ = 25 °C
40 A, TJ = 25 °C
5
10
0
50
100
150
200
250
300
350
100
200
300
400
500
Ic (A)
diF/dt (A/μs)
Fig. 15 - Typical IGBT Switching Time vs. IC, TJ = 125 °C Freewheeling Diode VS-H3195D12A6B in TO-247 Package
Fig. 18 - Typical Irr Antiparallel Diode vs. diF/dt, Vrr = 400 V
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6000
50
40 A, TJ = 125 °C
5000
Irr (A)
4000
Qrr (nC)
TJ = 125 °C
40
10 A, TJ = 125 °C
3000
30
20
TJ = 25 °C
2000
1000
10 A, TJ = 25 °C
10
40 A, TJ = 25 °C
0
0
100
200
300
400
500
100
200
Fig. 19 - Typical Qrr Antiparallel Diode vs. diF/dt, Vrr = 400 V
500
Fig. 21 - Typical Irr Chopper Diode vs. diF/dt, Vrr = 400 V, IF = 50 A
600
10 000
550
9000
8000
TJ = 125 °C
TJ = 125 °C
7000
450
Qrr (nC)
trr (ns)
400
diF/dt (A/μs)
diF/dt (A/μs)
500
300
400
350
6000
5000
4000
300
3000
TJ = 25 °C
250
TJ = 25 °C
2000
200
1000
100
200
300
400
500
100
200
300
400
500
diF/dt (A/μs)
diF/dt (A/μs)
Fig. 20 - Typical trr Series Diode vs. diF/dt, Vrr = 400 V, IF = 50 A
Fig. 22 - Typical Qrr Chopper Diode vs. diF/dt, Vrr = 400 V, IF = 40 A
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
D = 0.50
D = 0..20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
0.01
0.001
0.0001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 23 - Maximum Thermal Impedance ZthJC Characteristics IGBT
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ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 24 - Maximum Thermal Impedance ZthJC Characteristics Series Diode
ORDERING INFORMATION TABLE
Device code
VS-
G
T
300
Y
H
120
N
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Insulated Gate Bipolar Transistor (IGBT)
3
-
T = trench IGBT technology
4
-
Current rating (300 = 300 A)
5
-
Y = current fed inverter
6
-
Package indicator (dual INT-A-PAK)
7
-
Voltage rating (120 = 1200 V)
8
-
N = ultrafast
CIRCUIT CONFIGURATION
6
7
11
1
9
2
3
5
4
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DIMENSIONS in millimeters
Mounting depth max.11
2.8 x 0.5
16
28
4
1
28
31
3
7
11
6
10
2
8
4
9
5
15
30
48
61.4
20.1
35.4
6.
27
Ø
26
7.2 ± 0.6
23
30.5
6
3-M6
6
22
6
93
106.4
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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