VS-GT400TH120U
www.vishay.com
Vishay Semiconductors
Molding Type Module IGBT,
2-in-1 Package, 1200 V, 400 A
FEATURES
• Low VCE(on) trench IGBT technology
• 10 μs short circuit capability
• VCE(on) with positive temperature coefficient
• Maximum junction temperature 175 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
Double INT-A-PAK
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
TYPICAL APPLICATIONS
VCES
1200 V
• Inverter for motor drive
IC at TC = 80 °C
400 A
• AC and DC servo drive amplifier
VCE(on) (typical)
at IC = 400 A, 25 °C
1.90 V
• Uninterruptible power supply (UPS)
Speed
8 kHz to 30 kHz
Package
Double INT-A-PAK
Circuit
Half bridge
DESCRIPTION
Vishay’s IGBT power module provides ultralow conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
Collector to emitter voltage
VCES
1200
Gate to emitter voltage
VGES
± 30
Collector current
Pulsed collector current
IC
ICM
V
TC = 25 °C
750
TC = 80 °C
400
tp = 1 ms
800
IF
Diode maximum forward current
IFM
tp = 1 ms
800
Maximum power dissipation
PD
TJ = 175 °C
2344
Operating junction temperature range
VISOL
TJ
A
400
Diode continuous forward current
RMS isolation voltage
UNITS
f = 50 Hz, t = 1 min
W
2500
V
-40 to +150
°C
Revision: 12-Jun-15
Document Number: 94854
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT400TH120U
www.vishay.com
Vishay Semiconductors
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
Collector to emitter breakdown voltage
SYMBOL
V(BR)CES
TEST CONDITIONS
TJ = 25 °C
MIN.
TYP.
MAX.
1200
-
-
VGE = 15 V, IC = 400 A, TJ = 25 °C
-
1.90
2.35
VGE = 15 V, IC = 400 A, TJ = 125 °C
-
2.30
-
5.0
5.9
7.5
UNITS
Collector to emitter voltage
VCE(on)
V
Gate to emitter threshold voltage
VGE(th)
VCE = VGE, IC = 20 mA, TJ = 25 °C
Collector cut-off current
ICES
VCE = VCES, VGE = 0 V, TJ = 25 °C
-
-
5.0
mA
Gate to emitter leakage current
IGES
VGE = VGES, VCE = 0 V, TJ = 25 °C
-
-
400
nA
UNITS
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on delay time
Rise time
Turn-off delay time
SYMBOL
MIN.
TYP.
MAX.
td(on)
-
187
-
tr
-
57
-
-
180
-
td(off)
TEST CONDITIONS
VCC = 600 V, IC = 400 A, Rg = 1.4 ,
VGE = ± 15 V, TJ = 25 °C
-
149
-
Turn-on switching loss
Eon
-
19.9
-
Turn-off switching loss
Eoff
-
18.8
-
Turn-on delay time
td(on)
-
189
-
tr
-
58
-
-
187
-
Fall time
Rise time
Turn-off delay time
Fall time
tf
td(off)
tf
VCC = 600 V, IC = 400 A, Rg = 1.4 ,
VGE = ± 15 V, TJ = 125 °C
-
220
-
Turn-on switching loss
Eon
-
31.2
-
Turn-off switching loss
Eoff
-
23.4
-
51.2
-
-
1.28
-
-
3560
-
A
Rgint
-
0.59
-
LCE
-
-
18
nH
RCC’+EE’
-
0.32
-
m
UNITS
Reverse transfer capacitance
Cres
Stray inductance
mJ
1.84
Coes
Module lead resistance, terminal to chip
ns
-
Cies
Output capacitance
Internal gate resistance
mJ
-
Input capacitance
SC data
ns
ISC
VGE = 0 V, VCE = 30 V, f = 1.0 MHz
tp 10 μs, VGE = 15 V, TJ = 125 °C,
VCC = 900 V, VCEM 1200 V
nF
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Diode forward voltage
VF
Recovery charge
Qrr
Peak reverse recovery current
Irr
Reverse recovery energy
Erec
TEST CONDITIONS
IF = 400 A
IF = 400 A, VR = 600 V,
Rg = 4.1 , VGE = -15 V
MIN.
TYP.
MAX.
TJ = 25 °C
-
1.80
2.20
TJ = 125 °C
-
1.85
-
TJ = 25 °C
-
26
-
TJ = 125 °C
-
49
-
TJ = 25 °C
-
212
-
TJ = 125 °C
-
281
-
TJ = 25 °C
-
23.4
-
TJ = 125 °C
-
33.8
-
V
μC
A
mJ
Revision: 12-Jun-15
Document Number: 94854
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT400TH120U
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
TJ max.
-
-
175
Operating junction temperature range
TJop
-40
-
150
Storage temperature range
TSTG
-40
-
125
-
-
0.064
-
-
0.098
-
0.032
-
Maximum junction temperature
TEST CONDITIONS
IGBT
Junction to case
RthJC
Diode
Case to sink
RthCS
Conductive grease applied
Power terminal screw: M6
2.5 to 5.0
Mounting screw: M6
3.0 to 5.0
Mounting torque
°C
K/W
Nm
Weight
350
g
120
800
700
VCC = 600 V
Rg = 1.4 Ω
VGE = ± 15 V
TJ = 125 °C
100
600
25 °C
80
E (mJ)
500
IC (A)
UNITS
125 °C
400
300
60
Eon
40
200
20
100
Eoff
VGE = 15 V
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
200
400
600
VCE (V)
IC (A)
Fig. 1 - IGBT Output Characteristics
Fig. 3 - IGBT Switching Loss vs. IC
800
800
140
VCE = 20 V
700
VCC = 600 V
IC = 400 A
VGE = ± 15 V
TJ = 125 °C
120
600
125 °C
100
Eon
E (mJ)
IC (A)
500
400
25 °C
300
80
60
40
200
Eoff
20
100
0
0
6
7
8
9
10
11
0
3
6
9
12
VGE (V)
Rg (Ω)
Fig. 2 - IGBT Transfer Characteristics
Fig. 4 - IGBT Switching Loss vs. Rg
15
Revision: 12-Jun-15
Document Number: 94854
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT400TH120U
www.vishay.com
Vishay Semiconductors
900
IC, module
800
700
IC (A)
600
500
400
300
200
Rg = 1.4 Ω
VGE = ± 15 V
TJ = 125 °C
100
0
0
200
400
600
800
1000
1200 1400
VCE (V)
Fig. 5 - RBSOA
0.1
ZthJC (K/W)
IGBT
0.01
i:
1
2
3
4
r i [K/W]: 0.0038 0.0212 0.0204 0.0186
τ i [s]:
0.01
0.02
0.05
0.1
0.001
0.001
0.01
0.1
1
10
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
800
45
700
40
600
35
30
E (mJ)
500
IF (A)
Erec
400
300
25
20
15
125 °C
200
10
VCC = 600 V
Rg = 4.1 Ω
VGE = -15 V
TJ = 125 °C
25 °C
100
5
0
0
0
0.5
1.0
1.5
2.0
2.5
0
200
400
600
VF (V)
IF (A)
Fig. 7 - Diode Forward Characteristics
Fig. 8 - Diode Switching Loss vs. IF
800
Revision: 12-Jun-15
Document Number: 94854
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT400TH120U
www.vishay.com
Vishay Semiconductors
40
35
30
E (mJ)
25
Erec
20
15
10
VCC = 600 V
IF = 400 A
VGE = -15 V
TJ = 125 °C
5
0
0
2
4
6
8
10
12
14
16
18
20
Rg (Ω)
Fig. 9 - Diode Switching Loss vs. Rg
0.1
ZthJC (K/W)
Diode
0.01
i:
1
2
3
4
r i [K/W]: 0.0059 0.0324 0.0313 0.0284
τ i [s]:
0.01
0.02
0.05
0.1
0.001
0.001
0.01
0.1
1
10
t (s)
Fig. 10 - Diode Transient Thermal Impedances
CIRCUIT CONFIGURATION
6
7
1
2
3
5
4
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95538
Revision: 12-Jun-15
Document Number: 94854
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Double INT-A-PAK
DIMENSIONS in millimeters (inches)
2.8 x 0.5
23 ± 0.3
7.2 ± 0.5
31 ± 0.5
16
26
12
4.5
3-M6
30.5 ± 0.5
Mounting depth max. 11
28 ± 0.3
6
22
35.6
27 ± 0.4
0.2
30
48 ± 0.4
70
.4 ±
20.2
15 ± 0.4
Ø6
28 ± 0.3
6
93 ± 0.4
106.6
Revision: 27-May-13
Document Number: 95538
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
