VS-GT75NP120N

VS-GT75NP120N

  • 厂商:

    TFUNK(威世)

  • 封装:

    INT-A-Pak(3+4)

  • 描述:

    IGBT1200V150A446WINT-A-PAK

  • 数据手册
  • 价格&库存
VS-GT75NP120N 数据手册
VS-GT75NP120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V, 75 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology INT-A-PAK • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY TYPICAL APPLICATIONS VCES 1200 V IC at TC = 80 °C 75 A VCE(on) (typical) at IC = 75 A, 25 °C 2.08 V Speed 8 kHz to 30 kHz Package INT-A-PAK Circuit Chopper high side switch • AC inverter drives • Switching mode power supplies • Electronic welders DESCRIPTION Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as general inverters and UPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MAX. Collector to emitter voltage VCES 1200 Gate to emitter voltage VGES ± 20 Collector current Pulsed collector current TC = 25 °C IC ICM (1) UNITS V 150 TC = 80 °C 75 tp = 1 ms 150 Diode continuous forward current IF 75 Diode maximum forward current IFM (1) 150 A Maximum power dissipation PD TJ = 150 °C 446 W Short circuit withstand time tsc TJ = 125 °C 10 μs 2500 V RMS isolation voltage VISOL f = 50 Hz, t = 1 min Note (1) Repetitive rating: pulse width limited by maximum junction temperature. IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES Collector to emitter voltage VCE(on) Gate to emitter threshold voltage TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 75 A, TJ = 25 °C - 2.08 - VGE = 15 V, IC = 75 A, TJ = 175 °C - 2.35 - UNITS V VGE(th) VCE = VGE, IC = 3.5 mA, TJ = 25 °C 5.0 6.0 7.5 Collector cut-off current ICES VCE = VCES, VGE = 0 V, TJ = 25 °C - - 1.0 mA Gate to emitter leakage current IGES VGE = VGES, VCE = 0 V, TJ = 25 °C - - 400 nA Revision: 11-Jun-15 Document Number: 94829 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT75NP120N www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS PARAMETER SYMBOL Turn-on delay time MIN. TYP. MAX. td(on) - 260 - tr - 30 - td(off) - 420 - Rise time Turn-off delay time Fall time tf TEST CONDITIONS VCC = 600 V, IC = 75 A, Rg = 15 , VGE = ± 15 V, TJ = 25 °C - 70 - Turn-on switching loss Eon - 4.70 - Turn-off switching loss Eoff - 6.20 - Turn-on delay time td(on) - 120 - tr - 75 - td(off) - 310 - - 260 - Rise time Turn-off delay time Fall time tf VCC = 600 V, IC = 75 A, Rg = 4.7 , VGE = ± 15 V, TJ = 125 °C Turn-on switching loss Eon - 6.2 - Turn-off switching loss Eoff - 5.5 - Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres SC data tp  10 μs, VGE = 15 V, TJ = 125 °C,  VCC = 900 V, VCEM  1200 V ISC Stray inductance VGE = 0 V, VCE = 30 V, f = 1.0 MHz LCE Module lead resistance, terminal to chip RCC’+EE’ TC = 25 °C UNITS ns mJ ns mJ - 9.45 - - 0.34 - - 0.23 - - TBD - - - 30 nH - 0.75 - m MIN. TYP. MAX. UNITS nF A DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Forward voltage VF Reverse recovery time trr Peak reverse recovery current Irr Reverse recovery energy TEST CONDITIONS IF = 75 A IF = 75 A, VR = 600 V, dIF/dt = -2500 A/μs VGE = -15 V Erec TJ = 25 °C - 2.1 - TJ = 125 °C - 1.9 - TJ = 25 °C - 70 - TJ = 125 °C - 141 - TJ = 25 °C - 47 - TJ = 125 °C - 65 - TJ = 25 °C - TBD - TJ = 125 °C - TBD - V μC A mJ THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Operating junction temperature range Storage temperature range Junction to case per ½ module IGBT Diode Case to sink (Conductive grease applied) Mounting torque Weight MIN. TYP. MAX. UNITS TJ TEST CONDITIONS -40 - 150 °C TStg -40 - 125 °C - - 0.28 - - 0.48 - 0.05 - RthJC RthCS Power terminal screw: M5 2.5 to 5.0 Mounting screw: M6 3.0 to 6.0 Weight of module - 150 K/W Nm - g Revision: 11-Jun-15 Document Number: 94829 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT75NP120N www.vishay.com Vishay Semiconductors 150 20 VCC = 600 V IC = 75 A VGE = ± 15 V TJ = 125 °C 18 125 16 IC (A) 75 Eon, Eoff (mJ) 25 °C 100 125 °C 50 14 Eon 12 10 8 6 Eoff 4 25 2 VGE = 15 V 0 0 0 0.5 1 1.5 2 2.5 3 0 3.5 10 20 30 40 50 Rg (Ω) VCE (V) Fig. 1 - Typical Output Characteristics Fig. 4 - Switching Loss vs. RG 300 16 VCE = 50 V VCC = 600 V 14 250 12 VGE (V) IC (A) 200 125 °C 150 100 10 8 6 25 °C 4 50 2 IC = 75 A 0 0 0 2 4 6 8 10 12 0 14 300 IC (mA) Fig. 2 - Typical Transfer Characteristics Fig. 5 - Gate Charge Characteristics 400 102 VCC = 600 V Rg = 15 Ω VGE = ± 15 V TJ = 125 °C 8 Eon 6 Cies 101 C (nF) Eon, Eoff (mJ) 200 VGE (V) 12 10 100 Eoff 4 100 Coes 2 Cres 0 0 20 40 60 80 100 120 140 160 10-1 0 25 50 75 100 IC (A) VCE (V) Fig. 3 - Switching Loss vs. IC Fig. 6 - Typical Capacitance vs. Collector-Emitter-Voltage Revision: 11-Jun-15 Document Number: 94829 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT75NP120N www.vishay.com Vishay Semiconductors 150 103 102 25 °C 100 VF (V) t (ns) 125 td(off) tf td(on) tr 75 125 °C 50 VCC = 600 V Rg = 15 Ω VGE = ± 15 V TJ = 125 °C 101 0 20 40 60 80 100 120 140 25 0 0 160 0.5 1 2 2.5 3 IF (V) IC (A) Fig. 7 - Diode Forward Characteristics 104 1.5 Fig. 9 - Typical Forward Characteristics (Diode) VCC = 600 V IC = 75 A VGE = ± 15 V TJ = 125 °C 103 t (ns) td(off) tr tf td(on) 102 101 0 10 20 30 40 50 Rg (Ω) Fig. 8 - Typical Switching Times vs. Rg 100 Diode ZthJC (K/W) 10-1 IGBT 10-2 10-3 10-4 10-5 10-5 10-4 10-2 10-3 10-1 100 tp (s) Fig. 10 - Transient Thermal Impedance Revision: 11-Jun-15 Document Number: 94829 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT75NP120N www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95524 Revision: 11-Jun-15 Document Number: 94829 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000
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