VS-GT80DA120U

VS-GT80DA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 80 A FEATURES • Trench IGBT technology • Positive VCE(on) temperature coefficient • Square RBSOA • 10 μs short circuit capability • HEXFRED® low Qrr, low switching energy • TJ maximum = 150 °C • Fully isolated package SOT-227 • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 PRIMARY CHARACTERISTICS • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 VCES 1200 V IC DC 80 A at 104 °C VCE(on) typical at 80 A, 25 °C 2.0 V Speed 8 kHz to 30 kHz BENEFITS • Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating Package SOT-227 Circuit configuration Single switch with AP diode • Easy to assemble and parallel • Direct mounting to heatsink • Plug-in compatible with other SOT-227 packages • Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current SYMBOL VCES IC Pulsed collector current ICM Clamped inductive load current ILM Diode continuous forward current IF Single pulse forward current IFSM Gate to emitter voltage VGE Power dissipation, IGBT PD Power dissipation, diode PD Isolation voltage TEST CONDITIONS VISOL TC = 25 °C TC = 90 °C MAX. UNITS 1200 V 139 93 170 250 TC = 25 °C A 98 TC = 90 °C 61 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 350 ± 20 TC = 25 °C 658 TC = 90 °C 316 TC = 25 °C 403 TC = 90 °C 194 Any terminal to case, t = 1 min 2500 V W V Revision: 10-Sep-2019 Document Number: 96379 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT80DA120U www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Collector to emitter breakdown voltage VBR(CES) Collector to emitter voltage VCE(on) Gate threshold voltage VGE(th) Temperature coefficient of threshold voltage VGE(th)/TJ Collector to emitter leakage current ICES Forward voltage drop VFM Gate to emitter leakage current IGES MIN. TYP. MAX. VGE = 0 V, IC = 2.6 mA TEST CONDITIONS 1200 - - UNITS VGE = 15 V, IC = 80 A - 2.0 2.55 VGE = 15 V, IC = 80 A, TJ = 125 °C - 2.4 - VGE = 15 V, IC = 80 A, TJ = 150 °C - 2.5 - 4.75 5.7 7.0 VCE = VGE, IC = 2.6 mA (25 °C to 125 °C) - -12 - VGE = 0 V, VCE = 1200 V - 1.0 100 μA VGE = 0 V, VCE = 1200 V, TJ = 125 °C - 0.9 - mA IF = 80 A, VGE = 0 V - 2.9 3.5 IF = 80 A, VGE = 0 V, TJ = 125 °C - 3.1 - IF = 80 A, VGE = 0 V, TJ = 150 °C - 3.1 - VGE = ± 20 V - - ± 220 nA MIN. TYP. MAX. UNITS - 570 - - 4400 - - 235 - VCE = VGE, IC = 2.6 mA V mV/°C V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Total gate charge (turn-on) Qg Input capacitance Cies Reverse transfer capacitance Cres Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on delay time td(on) Rise time Turn-off delay time Fall time Reverse bias safe operating area tr VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 80 A, VCC = 600 V, VGE = 15 V, Rg = 1.0  L = 500 μH,  TJ = 25 °C IC = 80 A, VCC = 600 V, VGE = 15 V, Rg = 1.0  L = 500 μH, TJ = 125 °C Energy losses include tail and diode recovery  Diode used HFA16PB120 td(off) tf RBSOA Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Diode reverse recovery time Diode peak reverse current Irr Diode recovery charge Qrr Short circuit safe operating area TEST CONDITIONS VGE = -15 V, VGE = ± 15 V - 3.0 - - 3.2 - - 6.2 - - 3.9 - - 5.5 - - 9.4 - - 134 - - 65 - - 281 - - 155 - TJ = 150 °C, IC = 250 A, Rg = 1.0 VGE = 15 V to 0 V,  VCC = 800 V, VP = 1200 V, L = 500 μH pF mJ mJ ns Fullsquare - 179 - ns - 11.5 - A Qrr - 1029 - nC trr - 275 - ns - 17.8 - A - 2451 - nC SCSOA IF = 50 A, dIF/dt = 200 A/μs, VR = 400 V IF = 50 A, dIF/dt = 200 A/μs,  Vrr = 400 V, TJ = 125 °C VGE = 15 V, VCC = 800 V, VCE max.= 1200 V, TJ = 150 °C 10 μs THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction and storage temperature range Junction to case Case to heatsink IGBT Diode TEST CONDITIONS TJ, TStg RthJC RthCS Case style TYP. MAX. UNITS -40 - 150 °C - - 0.19 - - 0.31 Flat, greased surface - 0.1 - - 30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf. in) Torque to heatsink - - 1.3 (11.5)) Nm (lbf. in) Weight Mounting torque MIN. °C/W SOT-227 Revision: 10-Sep-2019 Document Number: 96379 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT80DA120U www.vishay.com Vishay Semiconductors 160 4.0 140 3.6 120 VGE = 15 V 120 A 3.2 TJ = 150 °C TJ = 25 °C 80 VCE (V) IC (A) 100 2.8 80 A 2.4 60 2.0 TJ = 125 °C 40 40 A 1.6 20 0 1.2 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 20 4.0 40 60 80 100 120 140 160 VCE (V) TJ (°C) Fig. 1 - Typical IGBT Output Characteristics, VGE = 15 V Fig. 4 - Collector to Emitter Voltage vs. Junction Temperature 160 80 140 70 120 60 VCE = 20 V 50 VGE = 18 V IC (A) IC (A) 100 VGE = 15 V 80 60 TJ = 125 °C 40 30 VGE = 12 V TJ = 25 °C 40 20 VGE = 9 V 20 10 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5 6 7 8 10 11 12 VGE (V) VCE (V) Fig. 2 - Typical IGBT Output Characteristics, TJ = 125 °C Fig. 5 - Typical IGBT Transfer Characteristics 180 7.0 160 6.5 140 TJ = 25 °C 6.0 120 100 VGEth (V) Allowable Case Temperature (°C) 9 DC 80 60 5.5 5.0 TJ = 125 °C 4.5 4.0 40 3.5 20 3.0 0 0 20 40 60 80 100 120 140 160 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 IC - Continuous Collector Current (A) IC (mA) Fig. 3 - Maximum IGBT Continuous Collector Current vs. Case Temperature Fig. 6 - Typical IGBT Gate Threshold Voltage Revision: 10-Sep-2019 Document Number: 96379 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT80DA120U www.vishay.com Vishay Semiconductors 6 10 TJ = 150 °C 5 1 Eoff 4 0.1 Energy (mJ) ICES (mA) TJ = 125 °C 0.01 TJ = 25 °C 0.001 3 2 Eon 1 0.0001 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 0 10 20 30 VCES (V) 40 50 60 70 80 90 100 IC (A) Fig. 10 - Typical IGBT Energy Loss vs IC TJ = 125 °C, VCC = 600 V, Rg = 1.0 , VGE = 15 V, L = 500 μH Fig. 7 - Typical IGBT Zero Gate Voltage Collector Current 120 1000 Switching Time (ns) 100 IF (A) 80 TJ = 25 °C 60 TJ = 150 °C 40 TJ = 125 °C 20 0 td(off) td(on) 100 tr 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 20 40 60 80 VFM (V) IC (A) Fig. 8 - Typical Diode Forward Characteristics Fig. 11 - Typical IGBT Switching Time vs. IC TJ = 125 °C, VCC = 600 V, Rg = 1.0 , VGE = 15 V, L = 500 μH 180 9 160 8 Eon 140 7 120 DC 100 80 60 Energy (mJ) Allowable Case Temperature (°C) tf 6 5 Eoff 4 40 3 20 0 2 0 10 20 30 40 50 60 70 80 90 100 110 0 2 4 6 8 10 12 IF - Continuous Forward Current (A) Rg (Ω) Fig. 9 - Maximum Diode Continuous Forward Current vs. Case Temperature Fig. 12 - Typical IGBT Energy Loss vs. Rg TJ = 125 °C, VCC = 600 V, IC = 80 A, VGE = 15 V, L = 500 μH Revision: 10-Sep-2019 Document Number: 96379 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT80DA120U www.vishay.com Vishay Semiconductors 30 1000 Irr (A) Switching Time (ns) 20 tf td(on) 100 TJ = 125 °C 25 td(off) 15 tr TJ = 25 °C 10 5 10 0 0 2 4 6 8 10 12 100 200 Rg (Ω) 300 500 dIF/dt (A/μs) Fig. 13 - Typical IGBT Switching Time vs. Rg TJ = 125 °C, VCC = 600 V, IC = 80 A, VGE = 15 V, L = 500 μH Fig. 15 - Typical Diode Reverse Recovery Current vs. dIF/dt Vrr = 400 V, IF = 50 A 400 3000 350 2500 TJ = 125 °C 300 2000 TJ = 125 °C Qrr (nC) 250 trr (ns) 400 200 150 1500 1000 TJ = 25 °C TJ = 25 °C 100 500 50 0 0 100 200 300 400 500 100 200 300 400 500 dIF/dt (A/μs) Fig. 14 - Typical Diode Reverse Recovery Time vs. dIF/dt Vrr = 400 V, IF = 50 A Fig. 16 - Typical Diode Reverse Recovery Charge vs. dIF/dt Vrr = 400 V, IF = 50 A C E( on ) 1000 by V tp d 100 m ite tp tp Li ICE - Collector-Emitter Current (A) dIF/dt (A/μs) 10 1 = = 6m = 1m 10 0μ s s s TA = 25 °C TJ = 150 °C VGE = 15 V Single pulse 0.1 1 10 100 1000 VCE - Collector-Emitter Voltage (V) Fig. 17 - IGBT Safe Operating Area Revision: 10-Sep-2019 Document Number: 96379 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT80DA120U www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 18 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 19 - Maximum Thermal Impedance ZthJC Characteristics (Diode) IC - Collector Curent (A) 300 250 200 150 100 50 0 1 10 100 1000 VCE (V) Fig. 20 - IGBT Reverse Bias SOA VGE = 15 V, TJ = 150 °C Revision: 10-Sep-2019 Document Number: 96379 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT80DA120U www.vishay.com Vishay Semiconductors L R= D.U.T. VCC ICM VC (1) 50 V 1000 V 1 D.U.T. + -V CC 2 Rg Note: (1) Driver same type as D.U.T.; VC = 80 % of VCE max. Due to the 50 V power supply, pulse width, and inductor will increase to obtain ID Fig. 21 - Clamped Inductive Load Test Circuit Fig. 22 - Pulsed Collector Current Test Circuit Diode clamp / D.U.T. L - + -5 V + VCC D.U.T. / driver Rg Fig. 23 - Switching Loss Test Circuit 1 2 90 % 10 % 3 VC 90 % td(off) 10 % IC 5% tf tr td(on) t = 5 µs Eoff Eon Ets = (Eon + Eoff) Fig. 24 - Switching Loss Waveforms Test Circuit Revision: 10-Sep-2019 Document Number: 96379 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT80DA120U www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- G T 80 D A 120 U 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Insulated gate bipolar transistor (IGBT) 3 - Trench IGBT technology 4 - Current rating (80 = 80 A) 5 - Circuit configuration (D = single switch with antiparallel diode) 6 - Package indicator (A = SOT-227) 7 - Voltage rating (120 = 1200 V) 8 - Speed / type (U = ultrafast) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING 3 (C) Single switch with AP diode Lead Assignment 4 3 1 2 D 2 (G) 1, 4 (E) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Revision: 10-Sep-2019 Document Number: 96379 8 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation 2 DIMENSIONS in millimeters (inches) 37.80 (1.488) 38.30 (1.508) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) 24.70 (0.972) 25.70 (1.012) R full 2.07 (0.081) 2.12 (0.083) 29.80 (1.173) 30.50 (1.200) 31.50 (1.240) 32.10 (1.264) 4x 1.90 (0.075) 2.20 (0.087) 7.70 (0.303) 8.30 (0.327) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 5.33 (0.210) 5.96 (0.234) 11.60 (0.457) 12.30 (0.484) 24.70 (0.972) 25.50 (1.004) Note • Controlling dimension: millimeter Document Number: 95423 1 For technical questions, contact: DiodesAmericas@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 19-May-2020 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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