VS-GT80DA60U

VS-GT80DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 600 V, 80 A FEATURES • High speed trench gate field-stop IGBT positive temperature coefficient • TJ maximum = 175 °C • FRED Pt® anti-parallel diodes with ultrasoft reverse recovery • Fully isolated package • Very low internal inductance (≤ 5 nH typical) SOT-227 • Industry standard outline • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS VCES 600 V IC DC 80 A at TC = 97 °C VCE(on) typical at 80 A, 25 °C 1.83 V BENEFITS • Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating IF (DC) 56 A at TC = 100 °C Speed 8 kHz to 30 kHz Package SOT-227 Circuit configuration Single switch with AP diode • Easy to assemble and safe paralleling • Direct mounting to heatsink • Plug-in compatible with other SOT-227 packages • Lower conduction losses and switching losses • Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current Pulsed collector current Diode continuous forward current SYMBOL IC IF VGE Power dissipation, IGBT PD Isolation voltage TC = 25 °C TC = 90 °C ICM Gate-to-emitter voltage Power dissipation, diode TEST CONDITIONS VCES PD VISOL MAX. UNITS 600 V 123 85 315 TC = 25 °C TC = 90 °C A 85 60 ± 20 TC = 25 °C 454 TC = 90 °C 258 TC = 25 °C 238 TC = 90 °C 135 Any terminal to case, t = 1 min 2500 V W V Revision: 13-Dec-2023 Document Number: 95884 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT80DA60U www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Temperature coefficient of threshold voltage Collector to emitter leakage current Forward voltage drop, diode Gate to emitter leakage current SYMBOL VBR(CES) VCE(on) VGE(th) ΔVGE(th)/ΔTJ ICES VFM IGES MIN. TYP. MAX. VGE = 0 V, IC = 2.0 mA TEST CONDITIONS 600 - - VGE = 15 V, IC = 80 A - 1.83 2.45 VGE = 15 V, IC = 80 A, TJ = 125 °C - 2.12 - VGE = 15 V, IC = 80 A, TJ = 150°C - 2.2 - 4.6 5.6 7.5 VCE = VGE, IC = 1.0 mA (25 °C to 150 °C) - -18.8 - VGE = 0 V, VCE = 600 V - 0.2 100 VCE = VGE, IC = 1.0 mA UNITS V mV/°C VGE = 0 V, VCE = 600 V, TJ = 125 °C - 51 - VGE = 0 V, VCE = 600 V, TJ = 150 °C - 259 - μA IF = 80 A, VGE = 0 V - 1.92 3.15 IF = 80 A, VGE = 0 V, TJ = 125 °C - 1.61 - IF = 80 A, VGE = 0 V, TJ = 150 °C - 1.54 - VGE = ± 20 V - - ± 250 nA MIN. TYP. MAX. UNITS - 10 800 - - 390 - - 220 - V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc TEST CONDITIONS VGE = 0 V, VCE = 25 V, f = 1.0 MHz IC = 80 A, VCC = 480 V, VGE = 15 V - 448 - - 76 - - 184 - Turn-on switching loss Eon - 1.95 - Turn-off switching loss Eoff - 1.25 - Total switching loss Etot - 3.2 - Turn-on delay time td(on) - 120 - - 90 - - 442 - Rise time Turn-off delay time Fall time Turn-on switching loss tr td(off) Energy losses include tail and diode recovery. tf Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on delay time td(on) Rise time IC = 80 A, VCC = 300 V, VGE = 15 V, Rg = 27 Ω, L = 500 μH, TJ = 25 °C tr IC = 80 A, VCC = 300 V, VGE = 15 V, Rg = 27 Ω, L = 500 μH, TJ = 125 °C - 35 - - 2.3 - - 1.43 - - 3.73 - - 124 - pF nC mJ ns mJ - 94 - td(off) - 455 - Fall time tf - 43 - Diode reverse recovery time trr - 69 - Diode peak reverse current Irr - 4.9 - A Diode recovery charge Qrr - 169 - nC - 139 - ns - 12.2 - A - 856 - nC Turn-off delay time Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V, TJ = 125 °C ns ns Revision: 13-Dec-2023 Document Number: 95884 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT80DA60U www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction temperature range Storage temperature range IGBT Junction-to-case Diode Case-to-heatsink MIN. TYP. MAX. UNITS TJ TEST CONDITIONS -40 - 175 °C TStg -40 - 150 °C - - 0.33 RthJC RthCS - - 0.63 Flat, greased surface - 0.1 - - 30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf. in) - - 1.3 (11.5) Nm (lbf. in) Weight Mounting torque Torque to heatsink Case style SOT-227 180 140 120 IC (A) 100 TJ = 175 °C 80 TJ = 25 °C TJ = 150 °C 60 TJ = 125 °C 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Allowable Case Temperature (°C) 160 160 140 120 100 DC 80 60 40 20 0 0 3.5 20 40 60 80 100 120 140 VCE (V) IC - Continuous Collector Current (A) Fig. 1 - Typical IGBT Output Characteristics, VGE = 15 V Fig. 3 - Maximum IGBT Continuous Collector Current vs. Case Temperature 160 3.3 VGE = 12 V VGE = 15 V VGE = 18 V 140 VGE = 15V 3.1 2.9 120 160 A 2.7 100 VGE = 9 V VCE (V) IC (A) °C/W 80 60 2.5 2.3 80 A 2.1 40 1.9 20 40 A 1.7 0 1.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 20 40 60 80 100 120 140 160 180 VCE (V) TJ (°C) Fig. 2 - Typical IGBT Output Characteristics, TJ = 125 °C Fig. 4 - Collector to Emitter Voltage vs. Junction Temperature Revision: 13-Dec-2023 Document Number: 95884 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT80DA60U www.vishay.com Vishay Semiconductors 10 80 VCE = 20 V 70 TJ = 175 °C 1 60 0.1 40 ICES (mA) 50 IC (A) TJ = 150 °C TJ = 150 °C TJ = 125 °C 30 TJ = 125 °C 0.01 0.001 20 TJ = 25 °C TJ = 25 °C 10 0.0001 0.00001 0 5 5.3 5.6 5.9 6.2 6.5 6.8 7.1 0 7.4 100 200 300 Fig. 5 - Typical IGBT Transfer Characteristics 600 700 Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current 7.0 160 6.5 140 6.0 TJ = 25 °C TJ = 175 °C 120 5.5 100 5.0 TJ = 125 °C 4.5 IF (A) VGEth (V) 500 VCES (V) VGE (V) TJ = 150 °C 80 TJ = 125 °C 60 4.0 40 TJ = 150 °C 3.5 TJ = 25 °C 20 3.0 0 2.5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.5 1.0 1.5 2.0 2.5 3.0 IC (mA) VFM (V) Fig. 6 - Typical IGBT Gate Threshold Voltage Fig. 9 - Typical Diode Forward Characteristics 180 db yV CE (on ) Allowable Case Temperature (°C) 1000 tp Lim tp 10 tp 1 =1 00 ite 100 IC (A) 400 =1 =6 μs ms ms TC = 25 °C TJ = 175 °C VGE = 15 V Single pulse 0.1 1 10 100 VCE (V) Fig. 7 - IGBT Safe Operating Area 1000 160 140 120 DC 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 IF - Continuous Forward Current (A) Fig. 10 - Maximum Diode Continuous Forward Current vs. Case Temperature Revision: 13-Dec-2023 Document Number: 95884 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT80DA60U 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 Vishay Semiconductors 10000 Switching Time (ns) Energy (mJ) www.vishay.com Eon Eoff td(off) 1000 td(on) tr 100 tf 10 10 20 30 40 50 60 70 80 90 25 30 35 IC (A) td(on) trr (ns) Switching Time (ns) td(off) 100 tf tr 10 30 40 50 55 60 65 70 Fig. 14 - Typical IGBT Switching Time vs. Rg TJ = 125 °C, VCC = 300 V, IC = 80 A, VGE = 15 V, L = 500 μH 1000 20 45 Rg (Ω) Fig. 11 - Typical IGBT Energy Loss vs. IC TJ = 125 °C, VCC = 300 V, Rg = 27 Ω, VGE = 15 V, L = 500 μH 10 40 50 60 70 80 170 160 150 140 130 120 110 100 90 80 70 60 50 40 TJ = 125 °C TJ = 25 °C 100 90 200 300 400 IC (A) dIF/dt (A/μs) Fig. 12 - Typical IGBT Switching Time vs. IC TJ = 125 °C, VCC = 300 V, Rg = 27 Ω, VGE = 15 V, L = 500 μH Fig. 15 - Typical trr Diode vs. dIF/dt Vrr = 200 V, IF = 50 A 500 24 5.5 22 5 20 4.5 Eon 18 3.5 3 Irr (A) Energy (mJ) TJ = 125 °C 16 4 Eoff 14 12 10 8 2.5 TJ = 25 °C 6 2 4 1.5 2 0 1 25 30 35 40 45 50 55 60 65 70 100 200 300 400 Rg (Ω) dIF/dt (A/μs) Fig. 13 - Typical IGBT Energy Loss vs. Rg TJ = 125 °C, VCC = 300 V, IC = 80 A, VGE = 15 V, L = 500 μH Fig. 16 - Typical Irr Diode vs. dIF/dt Vrr = 200 V, IF = 50 A 500 Revision: 13-Dec-2023 Document Number: 95884 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT80DA60U www.vishay.com Qrr (nC) Vishay Semiconductors 1400 1300 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 TJ = 125 °C TJ = 25 °C 100 200 300 400 500 dIF/dt (A/μs) Fig. 17 - Typical Diode Reverse Recovery Charge vs. dIF/dt Vrr = 200 V, IF = 50 A ZthJC - Thermal Impedance Junction-to-Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 1 10 t1 - Rectangular Pulse Duration (s) Fig. 18 - Maximum Thermal Impedance ZthJC Characteristics, IGBT ZthJC - Thermal Impedance Junction-to-Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 t1 - Rectangular Pulse Duration (s) Fig. 19 - Maximum Thermal Impedance ZthJC Characteristics, Diode Revision: 13-Dec-2023 Document Number: 95884 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT80DA60U www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- G T 80 D A 60 U 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Insulated gate bipolar transistor (IGBT) 3 - T = trench IGBT 4 - Current rating (80 = 80 A) 5 - Circuit configuration (D = single switch with antiparallel diode) 6 - Package indicator (A = SOT-227) 7 - Voltage rating (60 = 600 V) 8 - Speed / type (U = ultrafast IGBT) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING 3 (C) Single switch with AP diode D Lead Assignment 4 3 1 2 2 (G) 1, 4 (E) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Revision: 13-Dec-2023 Document Number: 95884 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation 2 DIMENSIONS in millimeters (inches) 37.80 (1.488) 38.30 (1.508) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) 24.70 (0.972) 25.70 (1.012) R full 2.07 (0.081) 2.12 (0.083) 29.80 (1.173) 30.50 (1.200) 31.50 (1.240) 32.10 (1.264) 4x 1.90 (0.075) 2.20 (0.087) 7.70 (0.303) 8.30 (0.327) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 5.33 (0.210) 5.96 (0.234) 11.60 (0.457) 12.30 (0.484) 24.70 (0.972) 25.50 (1.004) Note • Controlling dimension: millimeter Document Number: 95423 1 For technical questions, contact: DiodesAmericas@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 19-May-2020 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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