VS-GT90DA120U
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Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 106 A
FEATURES
• Trench IGBT technology
• Square RBSOA
• HEXFRED® low Qrr, low switching energy
• Positive VCE(on) temperature coefficient
• Fully isolated package
• Very low internal inductance (≤ 5 nH typical)
• Industry standard outline
SOT-227
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
BENEFITS
VCES
1200 V
IC DC
106 A at 90 °C
VCE(on) typical at 75 A, 25 °C
2.17 V
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
Speed
8 kHz to 30 kHz
Package
SOT-227
Circuit configuration
Single switch with AP diode
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
SYMBOL
IC
Pulsed collector current
ICM
Clamped inductive load current
ILM
Diode continuous forward current
Gate to emitter voltage
Power dissipation, IGBT
Power dissipation, diode
Isolation voltage
TEST CONDITIONS
VCES
IF
TC = 25 °C
PD
VISOL
UNITS
1200
V
169
TC = 90 °C
106
TJ = 150 °C, tp = 6 ms, VGE = 15 V
350
250
TC = 25 °C
76
TC = 90 °C
46
VGE
PD
MAX.
± 20
TC = 25 °C
781
TC = 90 °C
375
TC = 25 °C
357
TC = 90 °C
171
Any terminal to case, t = 1 min
2500
A
V
W
V
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
SYMBOL
VBR(CES)
Collector to emitter voltage
VCE(on)
Gate threshold voltage
VGE(th)
Temperature coefficient of threshold voltage
VGE(th)/ΔTJ
Collector to emitter leakage current
ICES
Forward voltage drop, diode
VFM
Gate to emitter leakage current
IGES
TEST CONDITIONS
VGE = 0 V, IC = 4 mA
VGE = 15 V, IC = 75 A
VGE = 15 V, IC = 75 A, TJ = 125 °C
VGE = 15 V, IC = 75 A, TJ = 150 °C
VCE = VGE, IC = 4 mA
VCE = VGE, IC = 4 mA, TJ = 125 °C
VCE = VGE, IC = 4 mA (25 °C to 125 °C)
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
VGE = 0 V, VCE = 1200 V, TJ = 150 °C
VGE = 0 V, IF = 75 A
VGE = 0 V, IF = 75 A, TJ = 125 °C
VGE = 0 V, IF = 75 A, TJ = 150 °C
VGE = ± 20 V
MIN.
1200
4.6
-
TYP.
2.17
2.44
2.49
5.9
4.63
-13
0.9
750
2.7
3.4
3.2
3.05
-
MAX.
2.60
7.6
100
5.0
± 250
UNITS
MIN.
-
TYP.
307
33
160
2.15
2.59
4.74
36
26
116
82
2.23
3.87
6.1
34
27
123
147
MAX.
-
UNITS
V
mV/°C
μA
mA
V
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
SYMBOL
Qg
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Reverse bias safe operating area
RBSOA
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
trr
Irr
Qrr
trr
Irr
Qrr
TEST CONDITIONS
IC = 90 A, VCC = 960 V, VGE = 15 V
IC = 75 A, VCC = 600 V,
VGE = 15 V, Rg = 5 Ω,
L = 500 μH, TJ = 25 °C
Energy losses
include tail and
diode recovery
Diode used
HFA16PB120
IC = 75 A, VCC = 600 V,
VGE = 15 V, Rg = 5 Ω,
L = 500 μH, TJ = 125 °C
TJ = 150 °C, IC = 250 A, Rg = 4.7 Ω, VGE = 15 V
to 0 V, VCC = 800 V, VP = 1200 V, L = 500 μH
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V,
TJ = 125 °C
mJ
ns
mJ
ns
Fullsquare
-
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
nC
140
13
860
210
19
1880
-
ns
A
nC
ns
A
nC
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction and storage temperature range TJ, TStg
IGBT
Junction to case
RthJC
Diode
Case to heatsink
RthCS
Weight
Mounting torque
Case style
TEST CONDITIONS
MIN.
-40
-
Flat, greased surface
Torque to terminal
Torque to heatsink
TYP.
0.05
30
-
MAX.
150
0.16
0.35
1.1 (9.7)
1.8 (15.9)
UNITS
°C
°C/W
g
Nm (lbf.in)
Nm (lbf.in)
SOT-227
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200
100
180
90
80
160
TJ = 125 °C
140
70
60
100
IC (A)
120
IC (A)
VCE = 20 V
TJ = 150 °C
TJ = 25 °C
50
80
40
60
30
40
20
20
10
TJ = 125 °C
TJ = 25 °C
0
0
0
5
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
5.5
6
6.5
7
7.5
8
8.5
9
9.5 10
VGE (V)
VCE (V)
Fig. 1 - Typical Trench IGBT Output Characteristics, VGE = 15 V
Fig. 4 - Typical Trench IGBT Transfer Characteristics
6.0
200
180
5.5
VGE = 12 V
VGE = 15 V
VGE = 18 V
160
140
TJ = 25 °C
5.0
VGEth (V)
IC (A)
120
100
80
4.5
4.0
60
TJ = 125 °C
40
3.5
VGE = 9 V
20
3.0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
4.5
0.5
1
1.5
2
2.5
3
3.5
4
VCE (V)
IC (mA)
Fig. 2 - Typical Trench IGBT Output Characteristics, TJ = 125 °C
Fig. 5 - Typical Trench IGBT Gate Threshold Voltage
10
TJ = 150 °C
160
1
140
TJ = 125 °C
120
DC
100
80
ICES (mA)
Allowable Case Temperature (°C)
180
0.1
0.01
60
40
TJ = 25 °C
0.001
20
0.0001
0
0
20
40
60
80
100 120 140 160 180
IC - Continuous Collector Current (A)
Fig. 3 - Maximum Trench IGBT Continuous Collector Current vs.
Case Temperature
200
400
600
800
1000
1200
VCES (V)
Fig. 6 - Typical Trench IGBT Zero Gate Voltage Collector Current
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1000
4
3.5
td(off)
Switching Time (ns)
3
Energy (mJ)
Eoff
2.5
2
1.5
Eon
1
tf
100
td(on)
tr
0.5
10
0
20
30
40
50
60
70
0
80
5
10
15
20
25
30
35
40
45
50
Rg (Ω)
IC (A)
Fig. 7 - Typical Trench IGBT Energy Loss vs. IC
(with Antiparallel Diode)
TJ = 125 °C, VCC = 600 V, Rg = 4.7 Ω, VGE = +15 V/-15 V, L = 500 μH
Fig. 10 - Typical Trench IGBT Switching Time vs. Rg
(with Antiparallel Diode)
TJ = 125 °C, VCC = 600 V, IC = 75 A, VGE = +15 V/-15 V, L = 500 μH
18
1000
16
14
12
100
td(off)
VGE (V)
Switching Time (ns)
tf
td(on)
10
8
6
10
tr
4
TJ = 25 °C
VCE = 960 V
IC = 90 A
2
0
1
20
30
40
50
60
70
0
80
200
300
400
QG (nC)
IC (A)
Fig. 8 - Typical Trench IGBT Switching Time vs. IC
(with Antiparallel Diode)
TJ = 125 °C, VCC = 600 V, Rg = 4.7 Ω, VGE = +15 V/-15 V, L = 500 μH
Fig. 11 - Typical Trench IGBT Gate Charge vs.
Gate to Emitter Voltage
13
100
12
90
11
80
10
TJ = 150 °C
70
9
8
60
Eon
7
IF (A)
Energy (mJ)
100
6
TJ = 125 °C
50
40
5
4
30
Eoff
3
20
2
TJ = 25 °C
10
1
0
0
0
5
10
15
20
25
30
35
40
45
50
Rg (:)
Fig. 9 - Typical Trench IGBT Energy Loss vs. Rg
(with Antiparallel Diode)
TJ = 125 °C, VCC = 600 V, IC = 75 A, VGE = +15 V/-15 V, L = 500 μH
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VFM (V)
Fig. 12 - Typical Antiparallel Diode Forward Characteristics
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180
3000
160
2700
140
2400
TJ = 125 °C
2100
120
DC
Qrr (nC)
Allowable Case Temperature (°C)
www.vishay.com
100
80
1800
1500
1200
TJ = 25 °C
60
900
40
600
20
300
0
0
0
10
20
30
40
50
60
70
80
90 100
100 200 300 400 500 600 700 800 900 1000
IF - Continuous Forward Current (A)
dIF/dt (A/μs)
Fig. 13 - Maximum Antiparallel Diode Continuous Forward Current
vs. Case Temperature
Fig. 16 - Typical Antiparallel Diode Reverse Recovery Charge vs.
dIF/dt, Vrr = 200 V, IF = 50 A
1000
300
275
250
100
200
175
TJ = 125 °C
150
IC (A)
trr (ns)
225
10
125
100
1
TJ = 25 °C
75
50
0.1
100 200 300 400 500 600 700 800 900 1000
1
10
100
1000
dIF/dt (A/μs)
VCE (V)
Fig. 14 - Typical Antiparallel Diode Reverse Recovery Time vs.
dIF/dt, Vrr = 200 V, IF = 50 A
Fig. 17 - Trench IGBT Reverse BIAS SOA
TJ = 150 °C, VCC = 800 V, IC = 250 A, VGE = +15 V/0, Vp = 1200 V
40
30
Irr (A)
25
20
TJ = 25 °C
15
10
5
0
100 200 300 400 500 600 700 800 900 1000
ICE - Collector-Emitter Current (A)
35
1000
TJ =125 °C
tp = 100 µs
TA = 25 °C
TJ = 150 °C
Single pulse
tp = 500 µs
tp = 1 ms
tp = 6 ms
100
10
BVCES limited
1
0.1
1
10
100
1000
dIF/dt (A/μs)
VCE - Collector-Emitter Voltage (V)
Fig. 15 - Typical Antiparallel Reverse Recovery Current vs. dIF/dt
Vrr = 200 V, IF = 50 A
Fig. 18 - IGBT Reverse Bias Safe Operating Area
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ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.01
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.001
0.0001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 19 - Maximum Trench IGBT Thermal Impedance ZthJC Characteristics
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.01
0.001
0.0001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 20 - Maximum Antiparallel Diode Thermal Impedance ZthJC Characteristics
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R=
L
D.U.T.
VCC
ICM
VC *
50 V
1000 V
D.U.T.
1
2
+
-V
CC
Rg
* Driver same type as D.U.T.; VC = 80 % of Vce(max.)
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id
Fig. 21 - Clamped Inductive Load Test Circuit
Fig. 22 - Pulsed Collector Current Test Circuit
Diode clamp/
D.U.T.
L
- +
-5V
+
VCC
D.U.T./
driver
Rg
Fig. 23 - Switching Loss Test Circuit
1
2
90 %
10 %
3
VC
90 %
td(off)
10 %
IC
5%
tf
tr
td(on)
t = 5 µs
Eoff
Eon
Ets = (Eon + Eoff)
Fig. 24 - Switching Loss Waveforms Test Circuit
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ORDERING INFORMATION TABLE
Device code
VS-
G
T
90
D
A
120
U
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Insulated gate bipolar transistor (IGBT)
3
-
T = Trench IGBT
4
-
Current rating (90 = 90 A)
5
-
Circuit configuration (D = single switch with AP diode)
6
-
Package indicator (A = SOT-227)
7
-
Voltage rating (120 = 1200 V)
8
-
Speed/type (U = ultrafast IGBT)
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
3 (C)
Single switch with AP
diode
Lead Assignment
4
3
1
2
D
2 (G)
1, 4 (E)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95423
Packaging information
www.vishay.com/doc?95425
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Outline Dimensions
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Vishay Semiconductors
SOT-227 Generation 2
DIMENSIONS in millimeters (inches)
37.80 (1.488)
38.30 (1.508)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
-A-
4 x M4 nuts
6.25 (0.246)
6.50 (0.256)
12.50 (0.492)
13.00 (0.512)
7.45 (0.293)
7.60 (0.299)
14.90 (0.587)
15.20 (0.598)
24.70 (0.972)
25.70 (1.012)
R full 2.07 (0.081)
2.12 (0.083)
29.80 (1.173)
30.50 (1.200)
31.50 (1.240)
32.10 (1.264)
4x
1.90 (0.075)
2.20 (0.087)
7.70 (0.303)
8.30 (0.327)
0.25 (0.010) M C A M B M
4.10 (0.161)
4.50 (0.177)
5.33 (0.210)
5.96 (0.234)
11.60 (0.457)
12.30 (0.484)
24.70 (0.972)
25.50 (1.004)
Note
• Controlling dimension: millimeter
Document Number: 95423
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Revision: 19-May-2020
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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