VS-HFA04SD60STRHM3

VS-HFA04SD60SHM3 www.vishay.com Vishay Semiconductors HEXFRED®, Ultrafast Soft Recovery Diode, 4 A FEATURES • Ultrafast recovery time 2, 4 • Ultrasoft recovery • Very low IRRM • Very low Qrr DPAK (TO-252AA) 1 N/C 3 Anode • Guaranteed avalanche • Specified at operating temperature • AEC-Q101 qualified • Meets JESD 201 class 2 whisker test • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C PRIMARY CHARACTERISTICS • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 IF(AV) 4A VR 600 V VF at IF 1.4 V trr typ. 17 ns TJ max. 150 °C Package DPAK (TO-252AA) Circuit configuration Single BENEFITS • Reduced RFI and EMI • Reduced power loss in diode and switching transistor • Higher frequency operation • Reduced snubbing • Reduced parts count DESCRIPTION / APPLICATIONS These diodes are optimized to reduce losses and EMI / RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for freewheeling, flyback, power converters, motor drives, and other applications where high speed and reduced switching losses are design requirements. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage VRRM Maximum continuous forward current IF(AV) TEST CONDITIONS TC = 100 °C VALUES UNITS 600 V 4 Single pulse forward current IFSM Repetitive peak forward current IFRM TC = 116 °C 16 PD TC = 100 °C 10 W -55 to +150 °C Maximum power dissipation Operating junction and storage temperatures TJ, TStg 25 A Revision: 19-Feb-2021 Document Number: 94756 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA04SD60SHM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage See fig. 1 SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 4 A - 1.5 1.8 IF = 8 A - 1.8 2.2 IR = 100 μA IF = 4 A, TJ = 125 °C - 1.4 1.7 VR = VR rated - 0.17 3.0 TJ = 125 °C, VR = 0.8 x VR rated - 44 300 UNITS V Maximum reverse leakage current IR Junction capacitance CT VR = 200 V - 4 8 pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH UNITS μA DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified) PARAMETER Reverse recovery time Peak recovery current SYMBOL trr IRRM MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 200 A/μA, VR = 30 V TEST CONDITIONS - 17 - TJ = 25 °C - 28 42 TJ = 125 °C - 38 57 - 2.9 5.2 - 3.7 6.7 TJ = 25 °C IF = 4 A dIF/dt = 200 A/μs VR = 200 V TJ = 125 °C A - 40 60 TJ = 125 °C - 70 105 TJ = 25 °C - 280 - TJ = 125 °C - 235 - MIN. TYP. MAX. UNITS TJ, TStg -55 - 150 °C Thermal resistance, junction to case RthJC - - 5.0 Thermal resistance, junction to ambient RthJA - - 80 - 2.0 - g - 0.07 - oz. 6.0 (5.0) - 12 (10) kgf · cm (lbf ⋅ in) Reverse recovery charge Rate of fall of recovery current Qrr dI(rec)M/dt TJ = 25 °C ns nC A/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range SYMBOL TEST CONDITIONS °C/W Typical socket mount Weight Mounting torque Marking device Case style DPAK (TO-252AA) HFA04SD60SH Revision: 19-Feb-2021 Document Number: 94756 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA04SD60SHM3 Vishay Semiconductors 100 1000 10 TJ = 175 °C TJ = 125 °C TJ = 25 °C 1 0.1 TJ = 150 °C 100 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 125 °C 10 1 TJ = 25 °C 0.1 0.01 0.001 0 2 1 3 4 5 0 6 100 200 300 400 500 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 1 1 10 100 1000 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM 0.1 Single pulse (thermal resistance) 0.01 0.00001 t1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.0001 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.001 0.01 0.1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 19-Feb-2021 Document Number: 94756 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA04SD60SHM3 www.vishay.com Vishay Semiconductors 50 200 180 IF = 8 A IF = 4 A 160 40 trr (ns) Qrr (nC) 140 30 VR = 200 V TJ = 125 °C TJ = 25 °C IF = 8 A IF = 4 A 120 100 80 60 VR = 200 V TJ = 125 °C TJ = 25 °C 40 20 100 20 100 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt Fig. 7 - Typical Stored Charge vs. dIF/dt 14 1000 IF = 8 A IF = 4 A 12 IF = 8 A IF = 4 A dI(rec)M/dt (A/µs) 10 IRR (A) 1000 8 6 4 VR = 200 V TJ = 125 °C TJ = 25 °C VR = 200 V TJ = 125 °C TJ = 25 °C 2 0 100 1000 100 100 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 6 - Typical Recovery Current vs. dIF/dt Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt Revision: 19-Feb-2021 Document Number: 94756 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA04SD60SHM3 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 19-Feb-2021 Document Number: 94756 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA04SD60SHM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- HF A 04 SD 60 S TR H M3 1 2 3 4 5 6 7 8 9 10 1 - Vishay Semiconductors product 2 - HEXFRED® family 3 - Electron irradiated 4 - Current rating (04 = 4 A) 5 - D-PAK 6 - Voltage rating (60 = 600 V) 7 - S = D-PAK 8 - TR = tape and reel R = tape and reel (right oriented) L = tape and reel (left oriented) 9 - H = AEC-Q101 qualified 10 - Environmental digit: M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-HFA04SD60SHM3 QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 75 3000 Antistatic plastic tube VS-HFA04SD60STRHM3 2000 2000 13" diameter reel VS-HFA04SD60STRRHM3 3000 3000 13" diameter reel VS-HFA04SD60STRLHM3 3000 3000 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95519 Part marking information www.vishay.com/doc?95518 Packaging information www.vishay.com/doc?95033 Revision: 19-Feb-2021 Document Number: 94756 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VS-HFA04SD60SLHM3 VS-HFA04SD60SRHM3