VS-HFA04TB60-M3

VS-HFA04TB60-M3 www.vishay.com Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 4 A FEATURES 2 • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 3 2L TO-220AC Base cathode 2 BENEFITS • Reduced RFI and EMI • Reduced power loss in diode and switching transistor • Higher frequency operation 1 Cathode • Reduced snubbing 3 Anode • Reduced parts count DESCRIPTION VS-HFA04TB60 is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 4 A continuous current, the VS-HFA04TB60... is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA04TB60... is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. PRIMARY CHARACTERISTICS IF(AV) 4A VR 600 V VF at IF 1.4 V trr typ. 17 ns TJ max. 150 °C Package 2L TO-220AC Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage VR Maximum continuous forward current IF TEST CONDITIONS TC = 100 °C VALUES UNITS 600 V 4 Single pulse forward current IFSM 25 Maximum repetitive forward current IFRM 16 Maximum power dissipation Operating junction and storage temperature range PD TJ, TStg TC = 25 °C 25 TC = 100 °C 10 -55 to +150 A W °C Revision: 23-Nov-17 Document Number: 96187 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA04TB60-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Cathode to anode  breakdown voltage VBR IR = 100 μA Maximum forward voltage VFM IF = 8.0 A IF = 4.0 A See fig. 1 MIN. TYP. MAX. 600 - - - 1.5 1.8 - 1.8 2.2 1.7 UNITS V IF = 4.0 A, TJ = 125 °C - 1.4 VR = VR rated - 0.17 3.0 - 44 300 - 4.0 8.0 pF - 8.0 - nH UNITS Maximum reverse  leakage current IRM Junction capacitance CT VR = 200 V Series inductance LS Measured lead to lead 5 mm from package body TJ = 125 °C, VR = 0.8 x VR rated See fig. 2 See fig. 3 μA DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5, 6 and 16 Peak recovery current See fig. 7 and 8 Reverse recovery charge See fig. 9 and 10 Peak rate of fall of recovery current during tb See fig. 11 and 12 SYMBOL MIN. TYP. MAX. trr IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V TEST CONDITIONS - 17 - trr1 TJ = 25 °C - 28 42 trr2 TJ = 125 °C - 38 57 IRRM1 TJ = 25 °C - 2.9 5.2 IRRM2 TJ = 125 °C - 3.7 6.7 - 40 60 - 70 105 IF = 4 A dIF/dt = 200 A/μs VR = 200 V ns A Qrr1 TJ = 25 °C Qrr2 TJ = 125 °C dI(rec)M/dt1 TJ = 25 °C - 280 - dI(rec)M/dt2 TJ = 125 °C - 235 - MIN. TYP. MAX. UNITS - - 300 °C - - 5.0 nC A/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Lead temperature Tlead Thermal resistance,  junction to case RthJC Thermal resistance,  junction to ambient RthA Typical socket mount - - 80 Thermal resistance,  case to heatsink RthS Mounting surface, flat, smooth, and greased - 0.5 - - 2.0 - g - 0.07 - oz. 6.0 (5.0) - 12 (10) kgf · cm (lbf · in) 0.063" from case (1.6 mm) for 10 s Weight Mounting torque Marking device Case style 2L TO-220AC K/W HFA04TB60 Revision: 23-Nov-17 Document Number: 96187 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA04TB60-M3 Vishay Semiconductors 1000 100 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 1 0.1 TJ = 150 °C 100 TJ = 125 °C 10 1 TJ = 25 °C 0.1 0.01 0.001 0 1 2 3 4 0 6 5 100 300 200 400 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Fig. 2 - Typical Reverse Current vs. Reverse Voltage 500 CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 1 1 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Response 10 1 0.1 0.01 0.00001 Single pulse (thermal resistance) 0.0001 PDM D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 23-Nov-17 Document Number: 96187 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA04TB60-M3 www.vishay.com Vishay Semiconductors 50 200 45 160 140 Qrr (nC) trr (ns) 40 35 30 25 IF = 8 A IF = 4 A 120 100 80 60 40 VR = 200 V TJ = 125 °C TJ = 25 °C 20 20 100 0 100 1000 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt Fig. 7 - Typical Stored Charge vs. dIF/dt 14 1000 IF = 8 A IF = 4 A 12 IF = 8 A IF = 4 A dI(rec)M/dt (A/µs) 10 Irr (A) VR = 200 V TJ = 125 °C TJ = 25 °C 180 IF = 8 A IF = 4 A 8 6 4 VR = 200 V TJ = 125 °C TJ = 25 °C VR = 200 V TJ = 125 °C TJ = 25 °C 2 0 100 100 100 1000 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 6 - Typical Recovery Current vs. dIF/dt Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 23-Nov-17 Document Number: 96187 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA04TB60-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- HF A 04 TB 60 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - HEXFRED® family 3 - Electron irradiated 4 - Current rating (04 = 4 A) 4 5 - Package: TB = 2L TO-220AC 4 6 - Voltage rating (60 = 600 V) 7 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-HFA04TB60-M3 QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96156 Part marking information www.vishay.com/doc?95391 Revision: 23-Nov-17 Document Number: 96187 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 2L TO-220AC DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A ØP Q B A (6) (E) A1 Thermal pad 1 (H1) H1 C D2 (6) D 2 D D L1 (2) C (6) c 2xb D1 2 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AC SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 ØP Q MILLIMETERS MIN. MAX. 11.68 13.30 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.524 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6, 7 3, 6 6 6 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC® TO-220, except D2 Revision: 13-Jun-2019 Document Number: 96156 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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