VS-HFA04TB60SL-M3

VS-HFA04TB60S-M3 www.vishay.com Vishay Semiconductors HEXFRED®, Ultrafast Soft Recovery Diode, 4 A FEATURES • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating temperature Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 1 3 D2PAK (TO-263AB) 2 BENEFITS 1 N/C • • • • • 3 Anode Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION VS-HFA04TB60S is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 4 A continuous current, the VS-HFA04TB60S is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA04TB60S is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. PRIMARY CHARACTERISTICS IF(AV) 4A VR 600 V VF at IF 1.4 V trr (typ.) 17 ns TJ max. 150 °C Package D2PAK (TO-263AB) Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage VR Maximum continuous forward current IF TEST CONDITIONS TC = 100 °C VALUES UNITS 600 V 4 Single pulse forward current IFSM 25 Maximum repetitive forward current IFRM 16 Maximum power dissipation Operating junction and storage temperature range PD TJ, TStg TC = 25 °C 25 TC = 100 °C 10 -55 to +150 A W °C Revision: 16-Dec-2021 Document Number: 96215 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEuropa@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA04TB60S-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Cathode to anode breakdown voltage VBR IR = 100 μA Maximum forward voltage VFM IF = 8.0 A MIN. TYP. MAX. 600 - - IF = 4.0 A See fig. 1 - 1.5 1.8 - 1.8 2.2 1.7 UNITS V IF = 4.0 A, TJ = 125 °C - 1.4 VR = VR rated - 0.17 3.0 - 44 300 - 4.0 8.0 pF - 8.0 - nH UNITS Maximum reverse leakage current IRM Junction capacitance CT VR = 200 V Series inductance LS Measured lead to lead 5 mm from package body TJ = 125 °C, VR = 0.8 x VR rated See fig. 2 See fig. 3 μA DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. trr IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 17 - trr1 TJ = 25 °C - 28 42 trr2 TJ = 125 °C - 38 57 IRRM1 TJ = 25 °C - 2.9 5.2 IRRM2 TJ = 125 °C - 3.7 6.7 Qrr1 TJ = 25 °C - 40 60 Qrr2 TJ = 125 °C - 70 105 di(rec)M/dt1 TJ = 25 °C - 280 - di(rec)M/dt2 TJ = 125 °C - 235 - MIN. TYP. MAX. UNITS - - 300 °C - - 5.0 - - 80 - 2.0 - g - 0.07 - oz. Reverse recovery time See fig. 5, 6 Peak recovery current Reverse recovery charge See fig. 7 Peak rate of fall of recovery current during tb, see fig. 8 TEST CONDITIONS IF = 4.0 A diF/dt = 200 A/μs VR = 200 V ns A nC A/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Lead temperature Tlead Thermal resistance, junction-to-case RthJC Thermal resistance, junction-to-ambient RthJA TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s Typical socket mount Weight Case style D2PAK (TO-263AB) HFA04TB60S 1000 100 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) Marking device K/W 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 TJ = 150 °C 100 TJ = 125 °C 10 1 TJ = 25 °C 0.1 0.01 0.001 0.1 0 1 2 3 4 5 6 0 100 200 300 400 500 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Fig. 2 - Typical Reverse Current vs. Reverse Voltage Revision: 16-Dec-2021 Document Number: 96215 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEuropa@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA04TB60S-M3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 1 1 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Response 10 1 PDM 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 Single pulse (thermal response) 0.01 0.00001 0.0001 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.001 0.01 1 0.1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 14 50 IF = 8 A IF = 4 A 45 10 Irr (A) trr (ns) 40 35 30 25 IF = 8 A IF = 4 A 12 8 6 4 VR = 200 V TJ = 125 °C TJ = 25 °C VR = 200 V TJ = 125 °C TJ = 25 °C 2 20 100 1000 0 100 1000 diF/dt (A/μs) diF/dt (A/μs) Fig. 5 - Typical Reverse Recovery Time vs. diF/dt Fig. 6 - Typical Recovery Current vs. diF/dt Revision: 16-Dec-2021 Document Number: 96215 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEuropa@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA04TB60S-M3 www.vishay.com Vishay Semiconductors 200 160 1000 VR = 200 V TJ = 125 °C TJ = 25 °C Qrr (nC) 140 120 IF = 8 A IF = 4 A di(rec)M/dt (A/μs) 180 IF = 8 A IF = 4 A 100 80 60 40 VR = 200 V TJ = 125 °C TJ = 25 °C 20 0 100 100 100 1000 1000 diF/dt (A/μs) diF/dt (A/μs) Fig. 7 - Typical Stored Charge vs. diF/dt Fig. 8 - Typical di(rec)M/dt vs. diF/dt (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 16-Dec-2021 Document Number: 96215 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEuropa@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA04TB60S-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- HF A 04 TB 60 S L -M3 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - HEXFRED® family 3 - Process designator: A = electron irradiated 4 - Current rating (04 = 4 A) 5 - Package outline (TB = TO-220, 2 leads) 6 - Voltage rating (60 = 600 V) 7 - S = D2PAK (TO-263AB) 8 - None = tube (50 pieces) L = tape and reel (left oriented) R = tape and reel (right oriented) 9 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N BASE QUANTITY PACKAGING DESCRIPTION VS-HFA04TB60S-M3 50 Antistatic plastic tube VS-HFA04TB60SL-M3 800 13" diameter reel VS-HFA04TB60SR-M3 800 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96164 Part marking information www.vishay.com/doc?95444 Packaging information www.vishay.com/doc?96424 Revision: 16-Dec-2021 Document Number: 96215 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEuropa@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC® outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 C 2xb 2.64 (0.103) 2.41 (0.096) (3) E1 c View A - A ± 0.004 M B 0.010 M A M B 2x e Plating Base Metal (4) b1, b3 H Gauge plane L Seating plane L3 A1 Lead tip (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. c1 (4) (c) B 0° to 8° MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 0.110 L 1.78 2.79 0.070 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inches (7) Outline conforms to JEDEC® outline TO-263AB Revision: 13-Jul-17 Document Number: 96164 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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