VS-HFA08PB60-N3

VS-HFA08PB60-N3 www.vishay.com Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 8 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr 1 • Designed and qualified JEDEC®-JESD 47 3 according to • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-247AC 2L Base cathode BENEFITS 2 1 Cathode • • • • • 3 Anode Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION VS-HFA08PB60... is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 8 A continuous current, the VS-HFA08PB60... is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA08PB60... is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. PRIMARY CHARACTERISTICS IF(AV) 8A VR 600 V VF at IF 1.4 V trr typ. 18 ns TJ max. 150 °C Package TO-247AC 2L Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Maximum continuous forward current SYMBOL IF Single pulse forward current IFSM Maximum repetitive forward current IFRM Maximum power dissipation Operating junction and storage temperature range TEST CONDITIONS VR PD TJ, TStg VALUES UNITS 600 V TC = 100 °C 8 tp = 10 ms 60 TC = 25 °C 36 TC = 100 °C 14 A 24 -55 to +150 W °C Revision: 29-Nov-2019 Document Number: 94041 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA08PB60-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. 600 - - - 1.4 1.7 - 1.7 2.1 IF = 8.0 A, TJ = 125 °C - 1.4 1.7 VR = VR rated - 0.3 5.0 - 100 500 - 10 25 pF - 8.0 - nH UNITS Cathode to anode breakdown voltage VBR IR = 100 μA Maximum forward voltage VFM IF = 16 A IF = 8.0 A See fig. 1 Maximum reverse leakage current IRM Junction capacitance CT VR = 200 V Series inductance LS Measured lead to lead 5 mm from package body TJ = 125 °C, VR = 0.8 x VR rated See fig. 2 See fig. 3 UNITS V μA DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5, 10 Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of fall of recovery current during tb See fig. 8 SYMBOL MIN. TYP. MAX. trr IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V TEST CONDITIONS - 18 - trr1 TJ = 25 °C - 37 55 trr2 TJ = 125 °C - 55 90 IRRM1 TJ = 25 °C - 3.5 5.0 IRRM2 TJ = 125 °C - 4.5 8.0 - 65 138 - 124 360 IF = 8.0 A dIF/dt = 200 A/μs VR = 200 V ns A Qrr1 TJ = 25 °C Qrr2 TJ = 125 °C dI(rec)M/dt1 TJ = 25 °C - 240 - dI(rec)M/dt2 TJ = 125 °C - 210 - MIN. TYP. MAX. UNITS - - 300 °C - - 3.5 nC A/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s Lead temperature Tlead Thermal resistance, junction to case RθJC Thermal resistance, junction to ambient RθJA Typical socket mount - - 40 Thermal resistance, case to heatsink RθCS Mounting surface, flat, smooth, and greased - 0.25 - - 6.0 - g - 0.21 - oz. 6.0 (5.0) - 12 (10) kgf · cm (lbf · in) Weight Mounting torque Marking device Case style TO-247AC 2L K/W HFA08PB60 Revision: 29-Nov-2019 Document Number: 94041 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA08PB60-N3 www.vishay.com Vishay Semiconductors 100 1000 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 0.1 0.4 100 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) TJ = 150 °C TJ = 125 °C 10 1 0.1 TJ = 25 °C 0.01 0.001 0.8 1.2 1.6 2.0 2.4 2.8 0 3.2 100 200 300 400 500 600 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Fig. 2 - Typical Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 1 1 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Response 10 1 PDM D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 29-Nov-2019 Document Number: 94041 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA08PB60-N3 www.vishay.com Vishay Semiconductors 80 500 IF = 16 A IF = 8 A IF = 4 A 400 Qrr (nC) trr (ns) 60 VR = 200 V TJ = 125 °C TJ = 25 °C 40 IF = 16 A IF = 8 A IF = 4 A 300 200 20 100 VR = 200 V TJ = 125 °C TJ = 25 °C 0 100 0 100 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg) Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg) 20 12 10 000 VR = 200 V TJ = 125 °C TJ = 25 °C dI(rec)M/dt (A/µs) 16 Irr (A) 1000 IF = 16 A IF = 8 A IF = 4 A 8 IF = 16 A IF = 8 A IF = 4 A 1000 VR = 200 V TJ = 125 °C TJ = 25 °C 4 0 100 10 100 1000 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (Per Leg) (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 29-Nov-2019 Document Number: 94041 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA08PB60-N3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- HF A 08 PB 60 -N3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - HEXFRED® family 3 - Electron irradiated 4 - Current rating (08 = 8A) 5 - PB = TO-247AC, 2 pins 6 - Voltage rating: (60 = 600 V) 7 - Environmental digit: -N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-HFA08PB60-N3 QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96144 Part marking information www.vishay.com/doc?95648 Revision: 29-Nov-2019 Document Number: 94041 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000