VS-HFA08TB120-N3

VS-HFA30PB120-N3 www.vishay.com Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 30 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr 1 • Designed and qualified JEDEC®-JESD 47 3 according to • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-247AC 2L Base cathode BENEFITS 2 1 Cathode • • • • • 3 Anode Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION VS-HFA30PB120... is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 V and 30 A continuous current, the VS-HFA30PB120... is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA30PB120... is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. PRIMARY CHARACTERISTICS IF(AV) 30 A VR 1200 V VF at IF 2.3 V trr typ. 47 ns TJ max. 150 °C Package TO-247AC 2L Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Maximum continuous forward current SYMBOL IF Single pulse forward current IFSM Maximum repetitive forward current IFRM Maximum power dissipation Operating junction and storage temperature range TEST CONDITIONS VR PD TJ, TStg VALUES UNITS 1200 V TC = 100 °C 30 tp = 10 ms 120 TC = 25 °C 350 TC = 100 °C 140 A 90 -55 to +150 W °C Revision: 29-Nov-2019 Document Number: 94069 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA30PB120-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Cathode to anode breakdown voltage VBR IR = 100 μA Maximum forward voltage VFM IF = 60 A IF = 30 A See fig. 1 MIN. TYP. MAX. 1200 - - - 2.4 4.1 - 3.1 5.7 UNITS V IF = 30 A, TJ = 125 °C - 2.3 4.0 VR = VR rated - 1.3 40 - 1100 4000 - 50 75 pF - 8.0 - nH UNITS Maximum reverse leakage current IRM Junction capacitance CT VR = 200 V Series inductance LS Measured lead to lead 5 mm from package body TJ = 125 °C, VR = 0.8 x VR rated See fig. 2 See fig. 3 μA DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5, 10 Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of fall of recovery current during tb See fig. 8 SYMBOL MIN. TYP. MAX. trr IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V TEST CONDITIONS - 47 - trr1 TJ = 25 °C - 110 170 trr2 TJ = 125 °C - 170 260 IRRM1 TJ = 25 °C - 10 15 IRRM2 TJ = 125 °C - 16 24 Qrr1 TJ = 25 °C Qrr2 TJ = 125 °C dI(rec)M/dt1 dI(rec)M/dt2 IF = 30 A dIF/dt = 200 A/μs VR = 200 V ns A - 650 980 - 1540 2310 TJ = 25 °C - 270 - TJ = 125 °C - 240 - MIN. TYP. MAX. UNITS - - 300 °C - - 0.36 nC A/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Lead temperature Tlead Thermal resistance, junction to case RthJC Thermal resistance, junction to ambient RthJA Typical socket mount - - 40 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth, and greased - 0.50 - - 5.61 - - 0.198 - oz. - 12 (10) kgf · cm (lbf · in) 0.063" from case (1.6 mm) for 10 s Weight 6.0 (5.0) Mounting torque Marking device Case style TO-247AC 2L °C/W g HFA30PB120 Revision: 29-Nov-2019 Document Number: 94069 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA30PB120-N3 Vishay Semiconductors 100 100 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 150 °C 10 TJ = 125 °C TJ = 25 °C 10 150 °C 125 °C 1 0.1 0.01 25 °C 0.001 0.0001 1 1 2 3 4 5 6 7 0 8 200 400 600 800 1000 1200 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Fig. 2 - Typical Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 10 10 1 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Response 1 0.1 R1 τJ 0.01 Single pulse (thermal response) 0.001 0.000001 0.00001 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 τ1 R2 τ2 R3 τ3 Ci = τi/Ri τC τi (s) Ri (°C/W) 0.234 0.000100 0.069 0.000434 0.056 0.002202 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.0001 0.001 0.01 0.1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 29-Nov-2019 Document Number: 94069 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA30PB120-N3 www.vishay.com Vishay Semiconductors 300 275 250 3000 VR = 200 V TJ = 125 °C TJ = 25 °C IF = 60 A IF = 30 A IF = 15 A 225 2000 Qrr (nC) 200 trr (ns) IF = 60 A IF = 30 A IF = 15 A 2500 175 150 125 1500 1000 100 75 VR = 200 V TJ = 125 °C TJ = 25 °C 500 50 25 0 100 150 200 250 300 350 400 450 0 100 500 400 500 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg) Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg) 900 35 800 30 20 700 IF = 60 A IF = 30 A IF = 15 A dI(rec)M/dt (A/µs) 25 IRRM (A) 300 200 15 10 0 100 150 200 250 300 350 400 450 IF = 15 A 600 500 400 IF = 30 A 300 IF = 60 A 200 Vrr = 200 V TJ = 125 °C TJ = 25 °C 5 Vrr = 200 V TJ = 125 °C TJ = 25 °C 100 0 100 500 150 200 250 300 350 400 450 500 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt(Per Leg) (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 29-Nov-2019 Document Number: 94069 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA30PB120-N3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- HF A 30 PB 120 -N3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - HEXFRED® family 3 - Electron irradiated 4 - Current rating (30 = 30 A) 5 - PB = TO-247AC, 2 pins 6 - Voltage rating: (120 = 1200 V) 7 - Environmental digit: -N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-HFA30PB120-N3 QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96144 Part marking information www.vishay.com/doc?95648 Revision: 29-Nov-2019 Document Number: 94069 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: HFA08TB120 VS-HFA08TB120PBF VS-HFA08TB120-N3