VS-HFA08TB60S-M3
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Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 8 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low IRRM and Qrr
• Specified at operating conditions
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
2
1
3
BENEFITS
D2PAK (TO-263AB)
• Reduced RFI and EMI
Base
cathode
2
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
1
N/C
3
Anode
DESCRIPTION
VS-HFA08TB60S is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 8 A continuous current, the
VS-HFA08TB60S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED® product line features
extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to “snap-off” during the tb
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA08TB60S is ideally suited
for applications in power supplies (PFC boost diode) and
power conversion systems (such as inverters), motor drives,
and many other similar applications where high speed, high
efficiency is needed.
PRIMARY CHARACTERISTICS
IF(AV)
8A
VR
600 V
VF at IF
1.4 V
trr (typ.)
18 ns
TJ max.
150 °C
Package
D2PAK (TO-263AB)
Circuit configuration
Single
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
VR
Maximum continuous forward current
IF
Single pulse forward current
IFSM
Maximum repetitive forward current
IFRM
Maximum power dissipation
Operating junction and storage temperature range
PD
TJ, TStg
TEST CONDITIONS
TC = 100 °C
VALUES
UNITS
600
V
8
60
A
24
TC = 25 °C
36
TC = 100 °C
14
-55 to +150
W
°C
Revision: 27-Oct-17
Document Number: 96219
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Cathode to anode
breakdown voltage
SYMBOL
VBR
TEST CONDITIONS
IR = 100 μA
IF = 8.0 A
Maximum forward voltage
VFM
IF = 16 A
See fig. 1
IF = 8.0 A, TJ = 125 °C
Maximum reverse
leakage current
IRM
VR = VR rated
TJ = 125 °C, VR = 0.8 x VR rated
See fig. 2
Junction capacitance
CT
VR = 200 V
See fig. 3
Series inductance
LS
Measured lead to lead 5 mm from package body
MIN.
TYP.
MAX.
600
-
-
-
1.4
1.7
-
1.7
2.1
-
1.4
1.7
UNITS
V
-
0.3
5.0
-
100
500
-
10
25
pF
-
8.0
-
nH
UNITS
µA
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
See fig. 5, 6
Peak recovery current
Reverse recovery charge
See fig. 7
Peak rate of fall of
recovery current during tb
See fig. 8
SYMBOL
MIN.
TYP.
MAX.
trr
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
TEST CONDITIONS
-
18
-
trr1
TJ = 25 °C
-
37
55
ns
trr2
TJ = 125 °C
-
55
90
IRRM1
TJ = 25 °C
-
3.5
5.0
IRRM2
TJ = 125 °C
-
4.5
8.0
Qrr1
TJ = 25 °C
-
65
138
Qrr2
TJ = 125 °C
-
124
360
dI(rec)M/dt1
TJ = 25 °C
-
240
-
dI(rec)M/dt2
TJ = 125 °C
-
210
-
MIN.
TYP.
MAX.
UNITS
-
-
300
°C
-
-
3.5
-
-
80
-
2.0
-
g
-
0.07
-
oz.
IF = 8.0 A
dIF/dt = 200 A/μs
VR = 200 V
A
nC
A/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Lead temperature
Tlead
Thermal resistance,
junction to case
RthJC
Thermal resistance,
junction to ambient
RthJA
TEST CONDITIONS
0.063" from case (1.6 mm) for 10 s
K/W
Typical socket mount
Weight
Marking device
Case style
D2PAK
(TO-263AB)
HFA08TB60S
Revision: 27-Oct-17
Document Number: 96219
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA08TB60S-M3
Vishay Semiconductors
1000
100
TJ = 150 °C
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
0.1
0.4
100
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
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TJ = 125 °C
10
1
0.1
TJ = 25 °C
0.01
0.001
0.8
1.2
1.6
2.0
2.4
2.8
0
3.2
100
300
200
400
500
600
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
100
TJ = 25 °C
10
1
1
10
100
1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Response
10
1
PDM
Single pulse
(thermal response)
0.01
0.00001
t1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.1
0.0001
0.001
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 27-Oct-17
Document Number: 96219
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VS-HFA08TB60S-M3
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Vishay Semiconductors
80
500
IF = 16 A
IF = 8 A
IF = 4 A
400
Qrr (nC)
trr (ns)
60
VR = 200 V
TJ = 125 °C
TJ = 25 °C
40
20
300
IF = 16 A
IF = 8 A
IF = 4 A
200
100
VR = 200 V
TJ = 125 °C
TJ = 25 °C
0
100
0
100
1000
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 7 - Typical Stored Charge vs. dIF/dt
20
10 000
VR = 200 V
TJ = 125 °C
TJ = 25 °C
dI(rec)M/dt (A/µs)
15
Irr (A)
1000
IF = 16 A
IF = 8 A
IF = 4 A
10
IF = 16 A
IF = 8 A
IF = 4 A
1000
5
VR = 200 V
TJ = 125 °C
TJ = 25 °C
0
100
100
100
1000
1000
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dIF/dt
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 27-Oct-17
Document Number: 96219
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VS-HFA08TB60S-M3
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
HF
A
08
TB
60
S
L
-M3
1
2
3
4
5
6
7
8
9
1
-
Vishay Semiconductors product
2
-
HEXFRED® family
3
-
Process designator: A = electron irradiated
4
-
Current rating (08 = 8 A)
5
-
Package outline (TB = TO-220, 2 leads)
6
-
Voltage rating (60 = 600 V)
7
-
S = D2PAK (TO-263AB)
8
-
• None = tube (50 pieces)
• L = tape and reel (left oriented)
• R = tape and reel (right oriented)
9
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-HFA08TB60S-M3
50
1000
Antistatic plastic tube
VS-HFA08TB60SR-M3
800
800
13" diameter reel
VS-HFA08TB60SL-M3
800
800
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95164
Part marking information
www.vishay.com/doc?95444
Packaging information
www.vishay.com/doc?96424
Revision: 27-Oct-17
Document Number: 96219
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2 PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
C
2xb
2.64 (0.103)
2.41 (0.096)
(3)
E1
c
View A - A
± 0.004 M B
0.010 M A M B
2x e
Plating
Base
Metal
(4)
b1, b3
H
Gauge
plane
L
Seating
plane
L3
A1
Lead tip
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
c1 (4)
(c)
B
0° to 8°
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
4
e
2.54 BSC
0.100 BSC
H
14.61
15.88
0.575
0.625
0.110
L
1.78
2.79
0.070
L1
-
1.65
-
0.066
4
L2
1.27
1.78
0.050
0.070
2
L4
L3
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inches
(7) Outline conforms to JEDEC® outline TO-263AB
Revision: 13-Jul-17
Document Number: 96164
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Revision: 09-Jul-2021
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Document Number: 91000